语音识别技术在楼宇控制系统中的应用

由于受识别率较低和计算量大的限制，语音识别的应用一直难以推广。根据楼宇控制系统的特点，文中提出了一种用DSP实现的数字连接词的语音识别实时系统，并结合BACnet协议，把系统设计成BACnet设备的一个嵌入式系统，从而把语音识别应用到楼宇控制系统中。     

基于OMAP5912的嵌入式非特定人连续语音识别系统

旨在嵌入式系统上实时实现非特定人、中等词汇量、连续语音识别。以TIOMAP5912双核处理器作为硬件平台,DSP gateway为OMAP处理器的双核通信架构,采用并行处理技术,将语音识别算法中计算密集型的任务分配给DSP处理,通过ARM和DSP协作实现语音识别,满足嵌入武语音识别系统实时性的要求。     

基于DSP的语音识别计算器设计

为解决特殊群体使用计算器困难的问题,设计了一种基于TMS320VC5509 DSP的可语音识别的计算器系统.该计算器系统的核心是采用HMM算法建立语音识别模型.通过对实时语音信号(数字、运算符号等语音)进行处理,将得到的参数与模板库参数进行匹配并加以识别,利用TMS320VC5509 DSP自带的计算模块实现语音信号整数100以内的加、减、乘、除等计算功能.实验结果表明,该计算器系统在低噪声场合和高噪声场合下识别率分别达到94.73%和76.55%.     

符合TI标准化规范的DSP实现方案

为使数字信号处理(DSP)算法具有更好的可移植性,介绍了一种符合Tl(德州仪器)标准化规范的DSP实时实现方案。遵从这一系列规范实现的DSP算法,能够很容易的应用到不同的系统中,从而提高DSP源代码的再利用率,缩短开发周期,节约人力资源。以TMS320C6201为平台,标准化实现了G．723．1语音编解码算法,论证了该方案的可行性。     

G．723．1语音编解码的DSP实时实现

本介绍了G．723．1语音编解码算法及LSI Logic公司推出的一种基于ZSP400内核的定点DSP(LSI402ZX)，设计了一个用于可视电话的语音编解码子系统，并描述了G．723．1算法在LSI402ZX上的实时实现方法，从而实现了实时语音传输的功能。     

定点DSP在数字语音通信中的应用

本文介绍了新一代定点DSP芯片——TMS320C54x的体系结构和特点,及应用单片C548实现高质量、低延时的G.729协议的语音编码算法,并分析了定点DSP在实时实现数字语音通信中的一些关键技术。     

一种用于无线通信的数字语音识别系统设计

数字语音录制过程中存在的环境、用户口音和非目标词汇等干扰,使以往开发出的无线通信数字语音识别系统准确性较低、可移植性较差。因此,对无线通信的数字语音识别系统进行优化设计,设计系统的核心元件为C6727DSP芯片、QGDH710语音识别芯片和CC2520射频收发器。C6727DSP芯片进行数字语音的前期处理工作;QGDH710语音识别芯片对处理后的数字语音进行识别,并将其识别出的指令反馈到CC2520射频收发器;CC2520射频收发器进行指令的格式转换工作,并将指令传输到用户无线通信设备中,最终实现数字语音识别系统在无线通信中的有效利用。为了方便用户进行系统操作,软件给出用户无线通信设备虚拟功能图。经实验验证可知,该设计系统准确性较高,具有高度可移植性。     

基于TMS320VC5509 DSP通信系统的G.729算法实现

为实现语音信号高质量低bit率传输、存储，现介绍了国际电讯联盟（ITU）提出的基于共轭结构代数码激励线形预测的G．729语音压缩算法的基本特性、基本原理，并且介绍了以TMS320VC5509为核心的DSP实时编解码系统：详细说明了该实时系统的硬件结构，以及G．729算法在TI公司16bit定点DSP上的软件实现过程，包括系统硬件框图、算法框图、编码细节。该实时通讯系统通过附加通讯模块可以与其它不同类型的系统互连，实现语音的实时通讯。     

G．723．1在基于DSP数字对讲机基带系统中应用

实现了G．723．1语音压缩编码在数字对讲机基带系统的应用。其创新在于充分利用了DSP的处理能力以及CPLD硬件上的高速、高集成度和可编程性进行硬件电路设计,在对讲机频带和DSP资源有限的条件下,对G．723．1的定点C代码进行深度优化,最终在实际电路上,收端可以播放出发端传来的实时、连续和清晰的语音。     

基于DSP的数字语音压缩系统

给出了基于TMS320C6711 DSP和G.729A语音压缩标准的实时语音压缩和解压系统的设计方案,并给出了系统的软、硬件设计.在TMS320C6711高速平台上实现数字语音信号的实时输入、压缩、解压、输出,只需要移植应用程序,就可以实现其他语音功能的扩展.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.