共查询到20条相似文献,搜索用时 828 毫秒
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在铝阳极氧化多层基板内用RF反应溅射制备了埋置型Ta-N薄膜电阻,研究了铝阳极氧化过程对Ta-N薄膜电阻和显微结构的影响.实验结果表明:Ta-N薄膜受上层多孔氧化铝膜影响在表层形成了由Ta2O5和Ta-O-N组成的氧化物凸起绝缘层,氧化物凸起层厚度与氧化电压有关.底层Ta-N薄膜电阻率和电阻温度系数基本保持不变,表层氧化凸起使电阻稳定性增加. 相似文献
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铝膜穿透性阳极氧化是实现阳极氧化铝薄膜多层布线基板制作的关键技术。研究了电流密度、电解质溶液温度和铝膜厚度对氧化时间的影响。绝缘电阻测定及扫描电子显微镜分析的结果证实了采用穿透性阳极氧化技术制作导带 ,导带间不存在残余铝薄膜。 相似文献
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采用阳极氧化方法在镍钛形状记忆合金表面成功制备出氧化物纳米管阵列。实验结果表明,阳极氧化电压和温度是影响纳米管生长的重要因素。当阳极氧化电压较低时,温度效应不大,合金表面仅形成数十纳米厚的氧化物薄膜。当阳极氧化电压升至20V,在20℃阳极氧化可形成双氧化物层(表面为不均匀多孔纳米结构,下部为具有两种不同直径的纳米管阵列);增大阳极氧化温度至30℃,表面多孔纳米结构溶解,露出底部的纳米管阵列;当阳极氧化温度增大至50℃时,纳米管开始出现破裂。纳米管为Ni-Ti-O氧化物,纳米管的镍含量与镍钛基体相比有所降低。 相似文献
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湿法氧化工艺对VCSEL器件性能的影响 总被引:1,自引:0,他引:1
在精确控制气体流量、温度等条件下对样品进行了湿法氧化实验.在SEM下观察了高铝氧化层的微观结构.讨论了高铝氧化限制层中氧化产物体积收缩产生的多孔结构对氧化反应的作用,以及收缩应力对有源区的影响.分析了氧化后器件串联电阻变大的原因.综合考虑这些因素,结合器件结构优化氧化层的设计,制备出了阈值电流低的、性能优良的VCSEL器件. 相似文献
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聚3,4-乙撑二氧噻吩(PEDOT)-氧化石墨烯复合电极在有机发光二极管中的应用 总被引:1,自引:0,他引:1
通过将氧化石墨烯(Graphene Oxide,GO)与十二烷基苯磺酸钠(Sodium Dodecyl Benzene Sulfonate,SDBS)作为填料混入聚3,4-乙撑二氧噻吩∶聚苯乙烯磺酸(PEDOT∶PSS)溶液中制备了高透光率和低方块电阻的透明导电薄膜.当氧化石墨烯与PEDOT∶PSS质量比为0.02%时,薄膜获得了最佳的导电率,电阻为85 Ω/口,在550 nm的光波长下透光率为87%.采用不同掺杂比例的薄膜作为电极制备了有机发光二极管(OLED)器件,相比于常用的ITO电极,复合薄膜作为阳极更有利于空穴的注入和传输,所制备的器件能够得到更优的性能.这些结果表明PEDOT∶PSS和氧化石墨烯复合电极有望取代柔性OLED器件中的ITO阳极. 相似文献
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利用金属膜的针尖诱导氧化过程和点击原子力显微镜工作模式实现纳米尺度模板复制 总被引:1,自引:0,他引:1
我们讨论用扫描探针显微技术研究超薄无序钛薄膜局域氧化过程,并利用此氧化过程实现薄膜表面钠米尺度网板修饰。实验说明针尖诱导氧化过程可被认为是电化学阳极氧化过程,钛薄膜的电阻,环境相对湿度,施加的电压幅度和氧化持续时间对纳米修饰的速度和分辨率都有影响。使用专门设计的软件,我们实现了基于针尖诱导氧化过程在超薄钛膜上按模板进行的纳米修饰图案。 相似文献
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O. Rabin P.R. Herz Y.‐M. Lin A.I. Akinwande S.B. Cronin M.S. Dresselhaus 《Advanced functional materials》2003,13(8):631-638
A method for the fabrication of thick films of porous anodic alumina on rigid substrates is described. The anodic alumina film was generated by the anodization of an aluminum film evaporated on the substrate. The morphology of the barrier layer between the porous film and the substrate was different from that of anodic films grown on aluminum substrates. The removal of the barrier layer and the electrochemical growth of nanowires within the ordered pores were accomplished without the need to remove the anodic film from the substrate. We fabricated porous anodic alumina samples over large areas (up to 70 cm2), and deposited in them nanowire arrays of various materials. Long nanowires were obtained with lengths of at least 9 μm and aspect ratios as high as 300. Due to their mechanical robustness and the built‐in contact between the conducting substrate and the nanowires, the structures were useful for electrical transport measurements on the arrays. The method was also demonstrated on patterned and non‐planar substrates, further expanding the range of applications of these porous alumina and nanowire assemblies. 相似文献
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CdTe钝化的HgCdTe非平衡载流子表面复合速度的实验研究 总被引:2,自引:2,他引:0
利用Ar^+束央求宙积技术在GgCdTe表面实现了低温CdTe介质薄膜的低温生长。在用-HgCdTe晶片表面分别用CdTe介质膜、HgCdTe自身阳极氧化膜进行表面钝化。利用光电导衰退测量技术测量了两种不同表面钝化的薄HgCdTe晶片的非平衡载流子(少数载流子)寿命,并通过光电导衰减信号波形的拟合,得到两种不同表面钝化的HgCdTe表面复合速度。实验结果表明,获得的CdTe/HgCdTe界面质量已 相似文献
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为了研究入射角度对含钴阳极氧化铝膜近红外偏振光谱特性的影响,采用阳极氧化的方法制备了阳极氧化铝膜,向其孔中镀入了钴,然后利用UV-3101PC型分光光度计对其进行了透射光谱测试,并在入射角分别为30和45时测试了其偏振光谱。结果表明,这种含钴阳极氧化铝膜在近红外波段具有良好的透射率和消光比,且消光比随着入射角的增大而显著提高。 相似文献
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A. W. Wark L. E. A. Berlouis F. K. Cruickshank D. Pugh P. F. Brevet 《Journal of Electronic Materials》2000,29(6):648-653
In-situ measurements of ellipsometry and second harmonic generation (SHG) were carried out to monitor the electrochemical growth of native anodic oxide films on Hg1?xCdxTe (MCT). Growth of the anodic oxide was performed using two different methods viz., by linear sweep voltammetry and by applying a constant current density. The influence of scan rate and the magnitude of the applied current density on the properties of the growing films were examined. From the ellipsometry data, we have shown that the measured refractive index value of 2.19 for the oxide film remains unchanged for moderate and high oxide growth rates. Only at very slow growth rates were significant increases in the refractive index observed (n=2.4), indicating an increase in the compactness of the layer. For film thicknesses in excess of ~1200 Å, a non-zero value for the extinction coefficient was found, indicating the incorporation of HgTe particles within the anodic oxide film. SHG rotational anisotropy measurements, performed on the MCT with and without an anodic oxide film showed only the four-fold symmetry associated with the MCT and so confirmed that the oxide was centrosymmetric. However, an increase in the SH intensity was observed in the presence of the oxide and this has been attributed to multiple reflections in the thin oxide film and also to the increase in the χ(2) non-linear susceptibility tensor as a result of charge accumulation at the MCT/anodic oxide interface. 相似文献
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M. P. Dukhnovskii A. S. Vedeneev V. A. Gudkov A. K. Ratnikova V. V. Rylkov Yu. Yu. Fedorov A. S. Bugaev 《Journal of Communications Technology and Electronics》2012,57(1):91-94
A method for creation of porous alumina layers on insulating substrates is proposed. The anodic oxidation of thin aluminum
films is performed in two stages: formation of a thin dense oxide layer and its local breakdown followed by the final oxidation
of the film with a propagation of the oxidation front from a breakdown region to periphery. Aluminum oxide layers exhibit
quasi-ordered structure with the pore diameter ranging from 10 to 100 nm and depending on conditions of electrochemical oxidation.
The method provides the aluminum film oxidation right to the insulating substrate (i.e., the absence of residual metal phase
inclusions on the interface) and can be used for the creation of matrix and composite structures for semiconductor microelectronics. 相似文献
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利用 Ar 束溅射沉积技术实现了 Cd Te薄膜的低温生长 ,利用电化学方法进行了 Hg Cd Te表面自身阳极氧化膜的生长 ,利用生长的 Cd Te介质膜和 Hg Cd Te表面自身阳极氧化膜对 n- Hg Cd Te光导器件进行了表面钝化 .对两种器件的电阻、各项性能指标进行了测量分析 ,实验表明得到的 Cd Te/ Hg Cd Te界面质量已达到器件实用化水平 . 相似文献
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Wen Liu Xiaodong Wang Rui Xu Xiaofeng Wang Kaifang Cheng Huili Ma Fuhua Yang Jinmin Li 《Materials Science in Semiconductor Processing》2013,16(1):160-164
With more and more attention given to the plasmonic nanostructures enhancing light trapping of solar cells, the fabrication of metal nanostructures becomes more and more important. In this work, we fabricated porous anodic alumina on SiO2/GaAs substrate and obtained periodic Ag nanodots with hemispherical shape by electron beam evaporation. During the experiments, it was found that the properties of barrier layers of porous anodic alumina fabricated on SiO2/GaAs and SiO2/Si substrates after pore-widening are different. The through-hole porous anodic alumina film on SiO2/GaAs substrate cannot be obtained after a long pore-widening process. The additional Ar ion bombardment against the samples was needed in our experiments to get the through-hole porous anodic alumina films on SiO2/GaAs substrate. 相似文献