低温高速率沉积非晶硅薄膜及太阳电池

采用射频等离子体增强化学气相沉积(RF-PECVD)技术,保持沉积温度在125℃制备非晶硅薄膜材料及太阳电池。在85 Pa的低压下以及400～667 Pa的高压下,改变Si H4浓度和辉光功率等沉积参数,对本征a-Si材料的性能进行优化。结果表明,在高压下,合适的Si H4浓度和压力功率比可以使a-Si材料的光电特性得到优化,并且薄膜的沉积速率得到一定程度的提高。采用低压低速和高压高速的沉积条件,在125℃的低温条件下制备出效率为6.7%的单结a-Si电池,高压下本征层a-Si材料的沉积速率由0.06～0.08 nm/s提高到0.17～0.19 nm/s。     

a-Si/μc-Si叠层电池中间层材料SiO_x:H制备研究

为提高a-Si/μc-Si叠层太阳电池的效率,采用射频等离子体增强化学气相沉积(RF-PECVD)技术,制备了系列n型掺磷硅氧(SiOx:H)薄膜作为中间层,研究了CO2/Si H4气体流量比、沉积功率和PH3掺杂浓度等工艺参数对材料光电特性的影响,获得了折射率、电导率和禁带宽度能够在较大范围内调控的SiOx:H薄膜。     

退火时间对电场辅助铝诱导晶化非晶硅薄膜的影响

以氢气稀释的硅烷(SiH4)为气源,利用PECVD方法在普通玻璃基片上生长a-Si薄膜.采用外加横向电场辅助的金属铝诱导晶化的方法,在氮气气氛条件下对a-Si薄膜样品进行快速退火制备poly-Si薄膜.采用X射线衍射仪、拉曼光谱仪、扫描电镜等测试手段研究了不同的退火时间对a-Si薄膜晶相结构、晶化率和表面形貌的影响.实验结果表明,电场辅助的铝诱导a-Si薄膜晶化效果较无外场作用显著加强,并且随着退火时间的延长,非晶硅薄膜的晶化效果增强.     

沉积速率对离子辅助蒸发ITO光学性能的影响

选用高纯度ITO颗粒(w(In2O3)∶w(SnO2)=9∶1)作为蒸发膜料、CAB(钙铝钡)红外玻璃为基片,利用离子辅助电子束蒸发技术在不同的沉积速率下制备了光学性能优良的ITO薄膜,并详细讨论了沉积速率对ITO薄膜可见光透过率、禁带宽度、短波截止限、长波截止限及红外区透过率等性能的影响。结果表明:沉积速率对ITO薄膜的光学性能具有重要影响。薄膜的可见光透过率最高可达82.6%,并随沉积速率的升高而降低;禁带宽度随沉积速率的改变在3.75～3.98eV之间变化,短波截止限随着禁带的宽化,向短波方向移动;在红外区,ITO薄膜的平均透过率随沉积速率的上升而明显减小,薄膜等离子波长λp发生蓝移现象。     

NiO薄膜厚度对CdTeO3量子点敏化太阳电池性能的影响

针对NiO薄膜厚度对量子点敏化太阳电池性能的影响,设计了1组对比实验,并首次采用CdTeO_3量子点作为敏化剂敏化NiO光阴极制备p型量子点敏化太阳电池。通过分析发现当丝网印刷层数为2层,NiO薄膜厚度大约为2.5μm时,光阴极的吸收强度和电池的短路电流密度都有较大的提升。最终电池获得了0.018%的光电转换效率,达到了国际文献报道的同等水平,拓宽了p型量子点敏化太阳电池的研究范围。     

n-β-FeSi2/p-Si异质结太阳电池的计算机模拟

主要以AFORS-HET软件来模拟n-β-FeSi2/c-Si(p)/μc-Si(p+)太阳电池的性能,讨论了发射区和μc-Si背场的特性对异质结太阳电池转换效率的影响。模拟结果发现:发射层的厚度增加会显著减低电池的短路电流密度,从而影响电池的转换效率;发射层的掺杂浓度也是影响异质结太阳电池光伏性能的一个重要参数;界面态对电池的影响是不容忽视的,为获得高效率的太阳电池,需尽可能将界面态缺陷密度控制在1010 cm-2/eV以下;微晶硅背场可有效提高太阳电池的转换效率,但要求背场掺杂至少要达到1019 cm-3以上。     

ITO透明导电薄膜的射频磁控溅射制备

为保证氧化铟锡(ITO)薄膜良好的导电性和很高的可见光透过率,通过射频磁控溅射在光学玻璃基底上制备了ITO薄膜,采用分光光度计和四探针测试仪测试了ITO薄膜电阻率和在可见光范围内的透过率,X射线衍射(XRD)测试薄膜晶相结构.研究基底温度、氧气和氩气流量比和退火时间等工艺对ITO薄膜光电特性的影响.研究结果表明:在氧气和氩气流量比为1∶99、基片温度200℃、溅射功率150W、250℃退火60min条件下,沉积的ITO薄膜厚度约为1.4μm,ITO薄膜光电特性最佳,电阻率为3.42×10~(-3)Ω·cm,可见光范围内峰值透过率为89.27%.     

ECR-PECVD制备纳米硅颗粒薄膜

为消除紫外线对硅基薄膜太阳能电池的热损害,并进一步提高电池转换效率,提出在硅基薄膜太阳能电池顶部低温下制备一薄层纳米硅薄膜.在P型(100)硅片上采用电子回旋共振微波等离子体增强化学气相沉积(ECR-PECVD)技术交替沉积SiO2/Si/SiO2层,改变衬底温度和H2流量沉积纳米硅薄膜,探讨低温下直接制备纳米硅薄膜的...     

Si基薄膜太阳电池绒面ZGO透明导电膜的研究

采用孪生对靶直流磁控溅射的方法在室温下制备高质量的Ga掺杂ZnO(ZGO)透明导电薄膜,用HCl腐蚀的方法获得满足光散射特性的绒面ZGO薄膜。制备的ZGO样品为具有六角纤锌矿结构的多晶膜,具有(002)方向的择优取向。腐蚀后,绒面ZGO薄膜的晶粒度减小,电阻率基本不变。在可见光范围内,绒面ZGO的反射率比平面ZGO的反射率下降了10%左右。将绒面ZGO薄膜应用于p-i-n型非晶Si薄膜太阳电池中,有效提高了太阳电池性能,使得电池的短路电流提高到17.79 mA/cm2,电池的转换效率增加到7.23%。     

电泳沉积制备TiO2纳米片作为钙钛矿太阳电池缓冲层

有机-无机杂化钙钛矿太阳电池自诞生以来,经过十几年的探索与发展,其认证效率由最初的3.8％发展为25.2％.界面问题一直是提升器件光电转换效率的关键.利用电泳沉积法制备TiO2薄膜,以TiO2纳米片为缓冲层制备钙钛矿太阳电池,研究TiO2缓冲层对钙钛矿太阳电池(PSCs)的光电转换效率及载流子运输的影响.结果表明,相对于未加入缓冲层的PSCs,电池的光电转换效率由10.78％提升至12.71％.TiO2缓冲层的加入有效地改善了界面接触问题,降低了电荷转移时的电阻,促进了载流子的运输,明显提高了钙钛矿太阳电池的光伏性能.     

Performance improvement of n-i-p μc-Si:H solar cells by gradient hydrogen dilution technique

High pressure radio frequency plasma enhanced chemical vapor deposition(RF-PECVD)process was adopted to investigate the effect of constant hydrogen dilution technique and gradient hydrogen dilu-tion technique on the structural evolution of intrinsic films and the performance of n-i-p microcrystal-line silicon solar cells.The experiment results demonstrated that the grain size and crystalline volume fraction along the growth direction of intrinsic films can be controlled and the performance of solar cells ca...     

Pentacene掺杂C60层迁移率对 有机太阳电池性能的影响

采用高真空蒸发的方法,在Indium—tin—oxide（ITO）玻璃上制造了Pentacene掺杂的Copper（Ⅱ）phthalocyanine（CuPc）／fullerene（C60）有机太阳电池。迁移率测量结果表明,掺杂Pentacene在C60层有效改变了太阳电池受主层的栽流子迁移率。在AM1-5太阳光照下测量器件的电流一电压特性,结果显示,太阳电池的能量转换效率与载流子迁移率密切相关。     

Studies of key technologies for CdTe solar modules

In this paper, CdS thin films, which act as the window layer and n-type partner to the p-type CdTe layer, were prepared by chemical bath deposition (CBD). CdTe thin films were deposited by the close-spaced sublimation (CSS) method. To obtain high-quality back contacts, a Te-rich layer was created with chemical etching and back contact materials were applied after CdTe annealing. The results indicate that the ZnTe/ZnTe:Cu complex layers show superior performance over other back contacts. Finally, by using laser scribing and mechanical scribing, the CdTe mini-modules were fabricated, in which a glass/SnO₂:F/CdS/CdTe/ZnTe/ZnTe:Cu/Ni solar module with a PWQC-confirmed total-area efficiency of 7.03% (54 cm²) was achieved. Supported by the Hi-Tech Research and Development Program of China (Grant No. 2003AA513010), and the Science and Technology Program of Sichuan Province, China (Grant No. 05GG021-003-3)     

Deposition methods and properties of polycrystalline CdS thin films

CdS thin film was used as a suitable window layer for CdS/CdTe solar cell, and the properties of CdS thin films deposited by pulsed laser deposition (PLD), chemical bath deposition (CBD) and magnetron sputtering (MS) were reported. The experimental results show that the transmittances of PLD-CdS thin films are about 85% and the band gaps are about 2.38–2.42eV. SEM results show that the surface of PLD-CdS thin film is much more compact and uniform. PLD is more suitable to prepare the CdS thin films than CBD and MS. Based on the thorough study, by using totally PLD technique, the FTO/PLD-CdS(150 nm)/CSS-CdTe solar cell (0.0707 cm²) can be prepared with an efficiency of 10.475%.     

Ni纳米粒子掩膜用于提高GaN基LED出光率的研究

以无水乙醇为溶剂、柠檬酸为分散剂,用超声分散技术配制Ni纳米粒子分散液;将分散液用旋涂的方法在GaN基发光二极管(LED)的ITO电流扩展层上制备单层Ni纳米粒子掩膜,采用ICP(inductively coupledplasma)干法刻蚀技术在ITO层上制作出表面粗化的结构。在20 mA工作电流下,与普通GaN基LED相比,这种ITO表面粗化的GaN基LED芯片发光强度提高了30%,并且对器件的电性能影响很小。结果表明,该表面粗化技术是一种工艺简单、成本低和能有效提高LED发光效率的方法。     

Crystallization and conductivity mechanism of ITO films on different substrates deposited with different substrate temperatures

ITO thin films were grown on PC(polycarbonate), PMMA(polymethyl methacrylate) and glass substrates by r.f. magnetron sputtering. The electrical, structural and chemical characteristics of ITO films were analyzed by the Hall Technique, X-ray diffraction, and X-ray photoelectron spectroscopy. XPS studies suggest that all the ITO films consist of crystalline and amorphous phases. The degree of crystallinity increases from less than 45% to more than 90% when the substrate temperature increases from 80 to 300 ℃. The In and Sn exist in the chemical state of In3+ and Sn4+, respectively, independent of substrate type and temperature. The enrichment of Sn on surface and In in body of ITO films are also revealed. And, the oxygen deficient regions exist both in surface layer and film body. For ITO films deposited under 180 ℃ , the carrier concentration are mainly provided by oxygen vacancies, and the dominant electron carrier scattering mechanism is grain boundary scattering between the crystal and the amorphous grain. For ITO films deposited over 180 ℃, the carrier concentration are provided by tin doping, and the dominant scattering mechanism transforms from grain boundary scattering between the crystal grains to ionized impurity scattering with increasing deposition temperature.     

电化学沉积CdS薄膜及其在CZTS薄膜太阳能电池中的应用

采用硫代硫酸钠、硫酸镉,配以有机酸NTA调节溶液pH值,首次在碱性环境中电沉积制备CdS薄膜,并将其应用到Cu2ZnSnS4（CZTS）薄膜太阳能电池中作为缓冲层．实验探讨了pH值、溶液浓度、沉积电位对薄膜晶体结构、形貌、界面等微观结构以及光学特性的影响、在pH值为9．36、Cd2＋浓度为0．025mol／L、沉积电位为-1．7V时,获得了表面均匀致密而无针孔、近化学计量原子比、禁带宽度为2．4eV的CdS薄膜,将其应用于CZTS薄膜太阳能电池中,所制备的缓冲层CdS薄膜展现了与CZTS薄膜良好的匹配性,CZTS／CdS的P—n结质量得到改善．     

玻璃衬底沉积氮化硅薄膜性能研究

为了改善玻璃衬底上制备的薄膜太阳电池的转换效率,采用高纯氮气作为等离子体气源,以质量分数为5%的SiH_4(Ar稀释)作为前驱气源,利用电子回旋共振-等离子体增强化学气相沉积技术在玻璃衬底上低温制备了氮化硅薄膜;利用各种测试设备分析了薄膜的成分、光学性能和表面形貌.结果表明:实验制备的非晶薄膜含氢量较低;薄膜的折射率随着衬底温度和微波功率的增加而增加.在衬底温度为350℃、微波功率为650 W时,薄膜的折射率在2.0左右,平均粗糙度为1.45 nm,还说明薄膜具有良好的光学性能和较高的表面质量.在此条件下,薄膜的沉积速率达到10.7 nm/min,表明本实验能在较高的沉积速率下制备均匀、平整、优质的SiN薄膜.     

Effects of potential and temperature on the electrodeposited porous zinc oxide films

Porous ZnO films were prepared by electrodeposition method in zinc nitrate aqueous solution using ITO glass covered with polystyrene sphere (PS) colloidal crystal arrays as substrates. The preparation procedure includes two parts: deposition of ZnO in the interstices of the colloidal crystals and subsequent removal of the PS templates. The influences of deposition potential and temperature on the ZnO films were investigated. The ordered, uniform porous ZnO films with optical transmittance of approximately 63.6% at 600 nm could be obtained when the deposition potential and temperature were –1.1 V and 70 ℃, respectively. The optical band gap energy increased along with the absolute deposition potential and temperature, ranging from 3.33 to 3.43 eV and from 3.35 to 3.42 eV, respectively.     

沉积法掺金改善碳纳米管电接触特性

研究了沉积法在碳纳米管中掺杂金属金对碳纳米管与金属电极间的电接触特性的影响。首先,采用酸回流方式在碳纳米管表面构造缺陷及亲水官能团并配制碳纳米管分散液;然后,采用柠檬酸钠和氯金酸配制金溶胶溶液,再将配制好的碳纳米管分散液滴入金溶胶溶液中,经震荡沉积得到掺杂金纳米粒子的碳纳米管样品。扫描电子显微图片及红外吸收光谱表明,酸回流成功地在碳纳米管管壁及端部构造了一些缺陷及亲水官能团。形貌表征及X射线光电子谱表明,在碳纳米管表面及端部成功地掺杂了金纳米粒子。掺金后碳纳米管拉曼光谱的G带波数增大,表明该掺杂类型为p型。最后,采用介电电泳法将原样与掺金碳纳米管分别组装到金电极之间,并实时测量接触电阻。结果表明,沉积法掺金可降低碳纳米管与金电极间的接触电阻,其阻值平均降幅高达71.49%。