多进制正交扩频技术在散射通信中的应用

针对散射远距离通信时传输损耗大的问题,将多进制正交扩频技术应用到散射通信中。阐述了多进制正交扩频的基本原理,给出了一种多进制正交扩频与分集技术相结合的设计及实现方法,重点介绍了扩频、相关解扩、定时同步、分集合并等关键部分的设计方法。使用硬件描述语言Verilog HDL对系统设计进行了实现,并在Modelsim中进行了仿真,验证了该设计的正确性。为多进制正交扩频技术结合分集技术应用到远距离散射通信的工程研制提供了参考。     

双多进制正交扩频在HF低速通信中的应用

双多进制正交扩频(Dual M-ary Orthogonal Spread Spectrum)技术是一种高频谱效率的扩频技术,而短波通信在通信领域具有其他通信手段无法替代的地位。阐述了双多进制正交扩频系统的基本原理,介绍了美军现役短波调制解调器标准MIL-STD-188-110B中的低速串行75 b/s波形。设计了基于双多进制扩频技术的短波低速改进波形,并与美军标MIL-STD-188-110B中的低速串行75 b/s波形进行了对比仿真。仿真结果表明,与美军标波形相比,改进波形的BER性能在AWGN信道及衰落信道下均有明显提升。     

Rayleigh衰落信道下编码多进制直接序列扩频通信系统的性能分析

分析了一种采用RS(n,k)编码的在MSK调制方式下基于循环移位的M进制直接序列扩频通信系统在Rayleigh衰落信道中的性能,给出了准确的误码率公式.通过SPW软件仿真给出了该系统在Rayleigh衰落环境下的性能曲线.仿真得到的误码率与公式推导的结果完全吻合.     

MIMO-DCSK通信系统在瑞利衰落信道下的误码性能分析

对多输入多输出差分混沌相移键控(MIMO-DCSK)通信系统在瑞利衰落信道下的性能进行了分析,给出了基于中心极限定理的高斯近似误码率表达公式,并与计算机仿真数据进行比较。仿真结果表明:随着扩频因子的增大,高斯近似误码率曲线与实际仿真误码率曲线的一致性也随之增强;相比DCSK系统,随着发送天线数量和接收天线数量的增加,MIMO-DCSK系统的误码性能有较大提升,且增加接收天线的数量可以比增加发送天线的数量获得更大的增益;随着发送天线数量的增多,不同天线间信号的非正交性导致理论误码率曲线与仿真曲线出现差别,在扩频因子增大后趋于一致。     

M进制直扩系统在平坦衰落下的性能分析

分析了采用RS(n，k)编码的一种在MSK调制方式下基于循环移位的M进制直接序列扩频通信系统在Rayleigh衰落信道中的性能，给出了准确的误码率公式。并通过SPW软件仿真给出了该系统在Rayleigh衰落环境下的性能曲线，仿真得到的误码率与公式推导的结果完全吻合。     

便携极低速对流层散射通信系统优化设计

针对便携极低速对流层散射通信系统的远距离应用,在分析散射信道快衰落特性的基础上,提出便携极低速通信系统分集接收方案,并给出不同分集重数情况下的误码性能理论曲线,在此基础上提出采用失真自适应接收的抗多径波形以获取最大隐分集增益,设计并实现高效低时延LDPC编码和窄带滤波器。仿真结果表明,纠错编码可获得5 d B编码增益,窄带滤波解决了极低速远距离通信存在的多普勒效应问题。在系统测试平台上对便携极低速散射通信系统性能进行实测,测试结果表明,该优化设计方案可有效提升系统能力。     

MC-CDMA调制在散射通信信道下的性能分析

为提高对流层散射通信系统容量和抗干扰能力,对散射信道下的多载波扩频方案进行研究.基于所建立的Rayleigh 分布对流层散射信道模型,分析了频域扩频多载波技术MC-CDMA的系统性能,对典型散射信道下的系统误码率进行了分析与仿真.结果表明:MC-CDMA可有效提升散射通信系统容量,单用户时系统误码率性能较好,随着用户数和散射信道多普勒频移的增大,系统误码率随之增大,需采用多址干扰控制和子载波干扰消除技术来改善系统误码率性能.     

短波低速数据传输关键技术

针对恶劣环境下的军事通信需求,设计了一个直扩-八进制相移键控（DS-8PSK）短波低速数据传输方案。在发送端,用多进制正交扩频来解决频带与信息传榆速率之间的矛盾,设计了一个复合扩频序列提高系统抗干扰性,在接收端,设计了一种改进型Rake接收机来实现分集接收,提高了系统抗多径衰落的能力。最后,用Matlab对数传系统的性能进行仿真验证,仿真结果验证了该方案的有效性。     

协作通信技术在卫星系统中的应用

针对卫星移动通信信道具有复杂时变衰落的特点,提出了将协作通信技术引入卫星系统,从而达到抗衰落、获取分集增益的目的。具体给出了卫星与用户之间彼此协作的模型,且仿真了卫星相互协作时系统的误码率曲线。仿真结果表明,协作通信会降低系统误码率,并带来显著的性能增益。     

多进制正交扩频加卷积编码体制性能分析

介绍了多进制正交扩频加卷积编码体制的发射端和接收端的原理,给出了多进制正交扩频系统的理论误比特率性能,针对接收端需要对多路匹配滤波器输出信号进行最大值判决,以利于后级的信道译码,从对数似然比(LLR)出发,提出了一种适用于多进制正交扩频系统的次最优的软信息提取方法。对在AWGN信道中多进制正交扩频系统性能进行了MATLAB仿真。结果表明,多进制正交扩频加卷积编码体制不但能有效地解决带宽与处理增益之间的矛盾,还可以获得比直扩系统加卷积编码更高的增益。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.