纳米TiO2修饰 Ni-W-P电极的制备及其光电催化析氢性能

在Cu基体上电沉积Ni-W-P合金后，通过溶胶-凝胶法制备了纳米TiO2修饰Ni-W-P合金电极．利用扫描电子显微镜（SEM）、X射线衍射（XRD）、阴极极化曲线测试了TiO2／Ni-W-P电极的表面形貌、结构及催化析氢性能，考察了烧结温度、TiO2膜层厚度对电极结构和性能的影响．实验结果表明：550℃下烧结1h、拉膜15次制备的TiO2／Ni-W-P电极光电催化析氢性能最佳，500W碘钨灯照射下析氢过电位减小约140mV；此时TiO2为锐态矿型和金红石型混晶结构，平均晶粒尺寸约7nm．     

镍钼修饰的p型硅电极材料的制备和性能

在半导体ｐ型Ｓｉ上恒电流沉积纳米晶和非晶Ｎｉ－Ｍｏ合金薄膜，制备出Ｎｉ－Ｍｏ合金修饰的半导体ｐ型Ｓｉ电极镀层．用ＳＥＭ对膜层进行了表征，测量了两种电极镀层的阴极催化析氢曲线，纳米晶Ｎｉ－Ｍｏ／ｐ－Ｓｉ镀层的催比析氢性能较好，测量了光照下纳米晶Ｎｉ－Ｍｏ／ｐ－Ｓｉ电极的催比析氢曲线．结果表明， Ｎｉ－Ｍｏ颗粒尺寸在４０～１００ｎｍ时，光照下电极的析氢过电位比无光照减小了约１６０ｍＶ（电流密度为８ ｍＡ·ｃｍ－２），催比析氢活性显著提高．     

化学镀Ni-Co-W-P及其析氢性能的研究

用化学镀方法制备出Ni-Co-W-P合金电极,测量了其在1 mol/L NaOH溶液中的阴极极化曲线并研究了其析氢电催化活性.试验表明,在相同的电流密度下,Ni-Co-P,Ni-W-P和Ni-Co-W-P合金电极的析氢过电位较Fe电极降低,其中Ni-Co-W-P的析氢过电位降低约230 mV,XRD试验显示其镀层为非晶态.并进一步测试了其在7 mol/L KOH中的连续电解曲线.结果表明:Ni-Co-W-P合金电极比Ni-Co-P,Ni-W-P合金电极具有更好的析氢电催化活性和电化学稳定性,有利于降低槽压,减少能耗.     

非晶态合金催化析氢阴极材料的研究进展

非晶态合金由于其优异的物理化学性能而备受研究者重视.特殊的空间结构使其表现出良好的化学活性,利用其亚稳态特性赋予电极材料特殊的化学性能,可将非晶态合金用于析氢电极材料.综述了非晶态合金阴极材料的研究进展,对过渡族金属元素的特性进行了分析,指出由过渡族金属元素组成的、具有低析氢超电势和低成本的非晶态合金复合镀层是目前与今后研究催化析氢电极材料的主要方向.     

AC/Ni-Co复合电极材料的制备及其催化析氢性能

采用复合电沉积法制备了AC(活性炭) / Ni-Co 复合电极。XRD 和SEM 测试结果表明, AC 微粒的复合未改变Ni-Co 合金电极的物相结构, 但使镀层的表面粗糙度和真实表面积增大。通过稳态阴极极化曲线和电化学交流阻抗技术考察了不同电极在1 mol·L-1 NaOH 溶液中的催化析氢性能, 结果表明, 镀液中AC 含量为3 g·L-1时所制备的AC/ Ni-Co 复合电极较Ni 电极和Ni-Co 合金电极具有更高的催化析氢活性, 电流密度为30 mA·cm-2时, 析氢反应极化电位分别比Ni 电极和Ni-Co 合金电极正移230 mV 和140 mV , 表观交换电流密度分别是Ni 电极和Ni-Co 合金电极的42 倍和9 倍, 复合电极催化析氢性能的提高主要归因于电极真实表面积的增大。      

PtCu/C合金固溶度梯度薄膜催化剂的后处理改性和析氢性能表征

通过离子束溅射(IBS)与Pt,Cu双靶移动工艺制备PtCu/C合金固溶度梯度薄膜。利用1mol/L的HNO_3对梯度薄膜进行表面刻蚀处理,得到具有大比表面积的催化剂表面结构。X射线衍射(XRD)分析结果表明:复合膜电极表层形成了PtCu置换固溶体合金,原有的Pt晶格收缩,晶面间距缩小;原子力显微镜(AFM)和高分辨透射电镜RTEMSTEM测试结果表明:后处理的样品表面具有多峰结构和沟孔状结构;采用循环伏安法(CV)和线性扫描伏安法(LSV)对样品的电化学析氢性能进行测试,结果表明:梯度材料去合金化可以有效地降低铂载量的同时,提高电化学析氢交换电流密度,后处理样品的Pt载量降低20.29%,电化学析氢交换电流密度达到0.004217A/cm~2,催化性能提高20.58%。     

复合电沉积制备（Ni-Mo）-TiO2电极及其电催化析氢性能

为开发新型廉价高效的析氢材料,用恒电流复合电沉积方法制备了(Ni-Mo)-TiO2复合电极,讨论了TiO2悬浮量和电沉积时间对电极催化析氢性能的影响.用XRD和SEM对电极的晶体结构和表面形貌进行了表征,以稳态极化曲线对电极的催化析氢特性进行了评价.结果表明,(Ni-Mo)-TiO2电极是纳米TiO2粒子相和纳米晶Ni-Mo固溶体相构成的复合电极.电极具有较高的催化析氢活性.在25℃、0.5mol.dm-3H2SO4溶液中其表观交换电流密度是Ni-Mo合金电极的2.6倍,是Ni电极的60倍.在电流密度为100mA·cm-2时,电极电势相对于Ni-Mo电极正移了120mV,相对于Ni电极正移了542mV.催化活性的提高源于反应机理的改变,表观活化吉布斯自由能相对于Ni-Mo合金电极降低了24.48kJ·mol-1.     

水溶液电沉积稀土合金膜的结构和性能研究

综述了水溶液中电沉积稀土合金膜的结构与性能的研究现状.其中结构包括显微结构、非晶形成规律、晶化动力学;性能涉及磁性、析氢电催化行为、耐腐蚀性、力学性能及光学性能.水溶液中电沉积稀土合金膜在一定的制备条件下具有非晶态结构,由于其优异的磁学、析氢电催化、耐腐蚀、力学及光吸收性能,已经应用于镀覆大的非平面电子装置、磁泡记忆元件、高温超导薄膜、磁光记录材料、电极材料、发光材料、储氢材料以及表面工程技术等领域,同时对水溶液中电沉积稀土合金膜的研究进行了展望.     

非晶态MmNi5.20合金薄膜的制备及析氢反应电催化性能的研究

用离子束溅射法制备非晶态ＭｍＮｉ＿（５．２０）合金薄膜。该非晶态合金薄膜在３０ｗｔ％ＫＯＨ，７０℃作析氢反应电极。实验结果表明，该电极不但具有良好的析氢电催化活性和电化学稳定性，而且具有很好的抗氢脆和抗粉化能力。交流阻抗分析表明，非晶态ＭｍＮｉ＿（５．２０）合金电极析氢反应过程主要由电化学反应步骤控制。     

非晶态Ni—Mo—Fe合金作电解水析氢反应电极

用电沉积法制备非晶态Ｎｉ４１．５Ｍｏ５．５Ｆｅ２３．０合金电极。该合金电极在３０ｗｔ％ＫＯＨ溶液，７０℃作析氢反应阴极，实验研究结果表明，合金电极对氢的析出反应具有优良的电催化性能。在２００ｍＡ／ｃｍ＾２电流密度下析氢反应过电位约９０ｍＶ，在连续电解和间歇电解条件下有良好的电化学稳定性。     

非晶Nd-Ni-B/NF稀土复合电极材料的制备及其析氢性能

本研究采用简单的一步化学沉积法制备非晶纳米Nd-Ni-B/NF稀土复合电极并研究其析氢(Hydrogen evolution reaction, HER)性能。通过各种测试方法对纳米电极材料进行物相分析和形貌表征,并探索其电催化析氢性能和稳定性。结果表明, 稀土Nd可提高电极的电催化析氢性能, 当硝酸钕浓度为3 g?L^-1时, 恒温35 ℃下施镀1 h, 制备的Nd-Ni-B/NF电极析氢性能最佳。Nd-Ni-B/NF(Nickel foam)电极在1.0 mol?L^-1KOH 溶液中, 20 mA?cm^-2电流密度下的析氢过电位仅为180 mV, Tafel斜率为117 mV?dec^-1, 析氢反应由Volmer-Heyrovsky步骤控制。此外, Nd-Ni-B/NF电极具有优越的电化学稳定性, 在持续电解12 h或2000次循环伏安测试后, 催化剂的活性没有明显衰减。     

Trifunctional Self‐Supporting Cobalt‐Embedded Carbon Nanotube Films for ORR,OER, and HER Triggered by Solid Diffusion from Bulk Metal

The development of robust and efficient trifunctional catalysts for oxygen reduction reaction (ORR), oxygen evolution reaction (OER), and hydrogen reaction (HER) is central to regenerative metal–air batteries and overall water splitting. It is still a big challenge to achieve an efficient integration of three functions in one freestanding electrode. Herein, a facile and upscalable strategy is demonstrated, to construct cobalt nanoparticle‐encapsulated 3D conductive films (Co/CNFs), which were induced by in situ solid diffusion from bulk cobalt metal. Under high‐temperature, volatile cobalt species from bulk cobalt foil are trapped by the contacted nitrogen‐rich carbons, followed by catalytic growth of interconnected carbon tubes, forming the 3D structured film. This resulting film can be directly preformed as self‐supporting and binder‐free electrode, which simultaneously facilitates the ORR, OER, and HER with excellent activities and superior stability. Furthermore, such “all‐in‐one” film also exhibits remarkable performance for Zn–air batteries and overall water splitting, demonstrating its feasibility for practical applications.     

p-Si TFT栅绝缘层用SiN薄膜的制备与研究

以NH3和SiH4为反应源气体，采用射频等离子体增强化学气相沉积（RF-PECVD）法在多晶硅（P-Si）衬底上沉积了一系列SiN薄膜并进行了相关性能测试。系统地分析讨论了反应源气体流量比和反应压强对siN薄膜介电常数、电学性能及界面特性的影响，在制备高质量的P-Si TFT栅绝缘层用SiN薄膜方面具有重要的参考价值。     

FeCoNiMoCr高熵合金薄膜电极的电催化析氧性能

用磁控溅射法在Ti基底上沉积了FeCoNiMoCr高熵合金薄膜并制成电极,用SEM和EDS观察和分析了电极表面和横截面的形貌和元素分布,用表面轮廓测量仪测量了电极的表面粗糙度,用XRD分析了电极的物相和结构,使用电化学工作站表征了电极的电化学性能.结果 表明,电极的表面粗糙、元素分布均匀,电极上的膜厚约为2.40 μm...     

Photoelectrochemical reduction of nitrate on p-Si coated with metallic Re thin films

In this study we examined the rhenium electrodeposition process onto p-Si(100) from acidic media. The study was carried out by means of cyclic voltammetry and the potential-steps method from which the corresponding nucleation and growth mechanism were determined. Both methods were performed under illumination using a solar simulator for electron photogeneration. A 3D progressive nucleation, diffusion-controlled growth of rhenium films was found. Likewise, a morphologic analysis was completed for the deposits obtained at different potential values by means of atomic force microscopy. An energetic characterization through capacitance measurements (Mott–Schottky plots and parallel capacitance) of the p-Si/NO₃⁻ and p-Si/Re/NO₃⁻ interfaces was done.The photoelectrochemical reduction of nitrate ions, PERN, on the different p-Si/Re electrode systems synthesized was studied. An overpotential decrease of 0.3 V and a photocurrent increase for the PERN on p-Si(100)/Re electrode systems compared with p-Si(100) and metallic Re was found. Finally, the kinetic parameters of the cathodic reactions in the p-Si and p-Si/Re acidic media were estimated using intensity modulated photocurrent spectroscopy. A brief analysis from this technique was done. According to these results, the p-Si/Re electrode system could be a potential photoelectrocatalyst for the PERN.     

Supermagnetron plasma CVD of highly effective a-CNx:H electron-transport and hole-blocking films suited to Au/a-CNx:H/p-Si photovoltaic cells

Hydrogenated carbon nitride (a-CN_x:H) films (0-500 nm) were deposited on p-Si wafers to make Au/a-CN_x:H/p-Si photovoltaic cells using i-C₄H₁₀/N₂ supermagnetron plasma chemical vapor deposition. At a lower electrode RF power (LORF) of 50 W and an upper electrode RF power (UPRF) of 50-800 W, hard a-CN_x:H films with optical band gaps of 0.7-1.0 eV were formed. At a film thickness of 25 nm (UPRF of 500 W), the open circuit voltage and short circuit current density were 247 mV and 2.62 mA/cm², respectively. The highest energy conversion efficiency was 0.29%. The appearance of the photovoltaic phenomenon was found to be due to the electron-transport and hole-blocking effect of thin a-CN_x:H film.     

稀土铈对镍-钴-磷合金电极的析氢催化性能的影响

采用自行研制的复合配合剂,用化学沉积法在酸性体系中制备了Ni-Co-P和Ni-Co-P稀土合金电极.研究了稀土元素铈对Ni-Co-P合金电极的析氢电催化活性和电化学稳定性的影响.通过电化学方法测定合金电极在7 mol/L KOH溶液中的阴极极化曲线、Tafel曲线和电化学稳定性曲线,结果表明,与Ni-Co-P合金电极相比,Ni-Co-P(RE)合金电极的析氢电位正移约90 mV,Ni-Co-P(RE)合金电极具有较优的析氢电催化活性和电化学稳定性.此外,还通过X射线衍射、扫描电镜和合金镀层成分分析,结果表明,稀土元素铈的加入使非晶态Ni-Co-P合金镀层晶粒细化,但稀土元素铈不与合金共沉积,只是起到改变镀层组织结构的作用.     

AZ91D镁合金化学镀Ni-P/Ni-W-P双层镀层研究

为了提高镁合金的耐磨耐蚀性,研究了一种镁合金直接化学镀Ni-P/Ni-W-P双层镀层的方法.采用扫描电镜(SEM)和X-射线衍分析射仪(XRD)分析了镀层的微观结构.对镀层进行了极化曲线分析,并进行了盐酸腐蚀试验和结合力试验.结果表明,该复合镀层组织致密无孔,具有较高的显微硬度和高耐蚀性.镀层硬度可达622HKV,试样在10%的HCl溶液中可保持近3h不腐蚀基体,对镁合金起到很好的保护作用.     

Impact of Zr content on multiphase zirconium–tungsten oxide (Zr–WO<Subscript>x</Subscript>) films and its MIS structure of Cu/Zr–WO<Subscript>x</Subscript>/p-Si Schottky barrier diodes

Metal–insulator–semiconductor (MIS) structure of Cu/Zr–WO_x/p-Si Schottky diodes with different concentrations (0, 4 and 8 wt%) of Zr content were fabricated. The interfacial layer of zirconium–tungsten oxide (Zr–WO_x) film was grown on p-type silicon (p-Si) wafer using jet nebulizer spray pyrolysis (JNSP) technique at the substrate temperature of 400 °C. After that, the Cu electrode was coated on the Zr–WO_x film via vacuum deposition method. The multiphase (orthorhombic and cubic) crystal structures of Zr–WO_x were revealed by X-ray diffraction (XRD) pattern. The surface morphological analysis using scanning electron microscope (SEM) showed the dissimilar structures of surface and energy dispersive X-ray diffraction (EDX) confirmed the presence of W, Zr and O atoms. Using UV–Visible (UV–Vis) and DC elecrical (I–V) analysis, the minimum band gap energy and average conductivity were obtained for higher concentration (8 wt%) of Zr content. The minimum barrier height (Φ_B) and minimum ideality factor (n) values were attained for 4 wt% of Cu/Zr–WO_x/p-Si Schottky barrier diode (SBD) under illumination condition.