Annealing behavior of single mode planar waveguide in YVO4 produced by He ion implantation

We report, for the first time to our knowledge, the formation of single mode planar waveguide in z-cut YVO₄ by 400 keV, 500 keV He ion implantation in fluence of 3 × 10¹⁶ ions/cm² at room temperature or at liquid nitrogen temperature (77 K). We investigated annealing behavior of the guiding mode and near-field image in the waveguide by prism-coupling method and end-face coupling method respectively. We found that the effective refractive index of the TE₀ mode was different before and after annealing for the samples implanted at room temperature, while, annealing had nearly no influence on the effective refractive index of the TE₀ mode of the samples implanted at liquid nitrogen temperature (77 K). After annealing at 600 K for 1 h, no guiding mode was observed in the sample implanted by 400 keV He ion in fluence of 3 × 10¹⁶ ions/cm² at room temperature. The Rutherford backscattering/channeling technique was used to investigate the damage reduction after annealing treatments. The minimum yield of the implanted, annealed sample was 5.43%. We reconstructed the refractive index profiles in the waveguide under different condition by applying intensity calculation method.     

Diffusion of Pb in carbon ion-implanted silicon: Discovery of a new crystalline phase after electron beam annealing

A novel phase has been discovered by dual low-energy ion implantation and high vacuum electron beam annealing. (100) p-type Si was implanted with (a) 20 keV ¹²C⁺ ions to the fluence of 6 × 10¹⁶ cm⁻² and (b) 7 keV Pb⁺ ions to the fluence of 4 × 10¹⁵ cm⁻². The ¹²C ion implantation results in an understoichiometric shallow SiC_x layer that intersects with the surface. The implanted Pb ions decorate a shallow subsurface region. High vacuum electron beam annealing at 1000 °C for 15 s using a temperature gradient of 5 °C s⁻¹ leads to the formation of large SiC nanocrystals on the surface with RBS measurements showing Pb has diffused into the deeper region affected by the ¹²C implantation. In this region, a new crystalline phase has been discovered by XRD measurements.     

Effect of Si and He implantation in the formation of ultra shallow junctions in Si

He, Si and B implantation are successively combined in order to produce ultra shallow junctions (USJs). Si is implanted at 180 keV to create a ‘vacancy-rich’ layer. Such a layer is however followed by a deeper interstitial rich one. He implantation is performed at a dose high enough (5 × 10¹⁶ cm^− 2) to create a cavity layer in Si sample. Eventually, B is introduced by low energy ion implantation. Since cavities are known to be sinks for self-interstitials (Is), they might be able to decrease the transient enhanced diffusion (TED) of B during the dopant activation annealing in all processes investigated in this study. The samples are divided in two groups (named S1 and S2) to check the benefits of defect engineering of each implantation element. Hence, sample 1 is first implanted with He, followed by cavity formation annealing and second with B. Si implantation is performed on S2 after cavity formation, and followed by B implantation in the same condition as S1. All samples are characterized by secondary ion mass spectrometry (SIMS), transmission electron microscopy (TEM) and Hall effect measurements. Results show that, in all cases, boron TED is suppressed while working with a cavity layer created before activation annealing. This layer acts as an Is barrier. Finally, an USJ with a low junction depth (X_j = (13 ± 1) nm, determined at 10¹⁸ cm^− 3 boron level) is successfully realized.     

Thermal evolution and optical properties of Cu nanoparticles in SiO2 by ion implantation

SiO₂ samples were implanted by 45 keV Cu ions at a dose of 1 × 10¹⁷ /cm², and subjected to furnace annealing at temperatures ranging from 200 to 600 °C in nitrogen atmosphere. The results indicate that the Cu nanoparticles have been synthesized by Cu ion implantation, and subsequent annealing induces the diffusion and nucleation of nanoparticles partially. The results from XPS measurements show that the Cu⁰ is the dominate charge state in the implanted and subsequent annealed samples. With increasing annealing temperature, the size and distribution of Cu nanoparticles have been modified gradually. The surface plasmon resonance (SPR) of Cu nanoparticles at 570 nm has been observed by optical transmission spectroscopy. The strongest SPR signal at 400-600 °C indicates that lots of Cu nanoparticles have grown and show good optical properties. Moreover, the luminescence has been investigated in Cu implanted and subsequent annealed samples. Possible luminescence mechanisms, such as radiation induced defects, Cu (ions or atoms) related luminescence centers, etc., have been discussed.     

Optimization of silicon nanocrystals growth process by low pressure chemical vapor deposition for non-volatile memory application

The processes of silicon nanocrystals (Si-NCs) growth on both SiO₂ and Si₃N₄ substrates by low pressure chemical vapor deposition have been systematically investigated. A two-step process was adopted for Si-NCs growth: nucleation at a high temperature (580-600 °C) and growth at a low temperature (550 °C). By adjusting the pre-deposition waiting time and deposition time, the density, size and uniformity can be effectively controlled. Compared to the growth of Si-NCs on SiO₂, the coalescence speed of Si-NCs on Si₃N₄ is faster. Uniform Si-NCs with a high density of 1.02 × 10¹² cm^− 2 and 1.14 × 10¹² cm^− 2 have been obtained on SiO₂ and Si₃N₄, respectively. Finally, a Si-NCs-based memory structure with a 2.1 V memory window was demonstrated.     

Structure of double interfaces system of Si3N4/SiO2/Si irradiated by γ-rays

The interfacial structures of double interfaces system of Si₃N₄/SiO₂/Si were examined using X-ray photoelectron spectroscopy (XPS) before and after ⁶⁰Co radiation. The experimental results demonstrate that there existed two interfaces, one consisted of Si₃N₄ and SiO₂, while another was made of Si and SiO₂, the interface between SiO₂ and Si was extended towards the interface of the Si₃N₄/SiO₂ meanwhile the center of the former interface was removed in the direction of the latter interface by ⁶⁰Co. The concentration of silicon in the Si₃N₄ state (BE 101.8 eV) was decreased with the variation of radiation dosage as well as bias field within the SiO₂-Si interface, remarkably. The mechanism for the experimental results is analyzed.     

Electronegativity and point defect formation in the ion implanted SiO2 layers

The metal-oxide-silicon (MOS) diode structure containing ion implanted electropositive (M⁺) and electronegative (M⁻) ions is one of the most promising candidates for a new type of high-efficiency electroluminescence (EL) devices which can be integrated with standard silicon CMOS technology. The implantation process creates defects in the SiO₂ layer. After implantation, an annealing process leads to the diffusion of implanted elements and broadening of the SiO₂/Si interface. The influence of different implanted ions (Gd, F, K) was investigated by EL measurements and correlated to different defects in the oxide layer. Implanted electronegative ions (such as F) lead to defects comprising O₂ molecules and peroxy radicals (POR). On the other hand, electropositive ions (Gd and K) increase the number of oxygen vacancy defects.     

Plasmons in double interfaces system of Si3N4/SiO2/Si irradiated by Co

The first level plasmons of Si in the pure Si state, in the SiO₂ state and in the Si₃N₄ state (corresponding to bonding energy 116.95, 122.0 and 127.0 eV) were investigated directly with X-ray photoelectron spectroscopy before and after ⁶⁰Co radiation. The experimental results demonstrate that there existed two interfaces, one consisted of plasmons of Si in the Si₃N₄ and SiO₂ states, while another was made of plasmons of Si in the pure Si state and in the SiO₂ state. When the Si₃N₄-SiO₂-Si samples were irradiated by ⁶⁰Co, the interface at Si₃N₄/SiO₂ was extended and at the same time the center of this interface moved towards the surface of Si₃N₄. The concentration of plasmon for silicon in the SiO₂ state is decreased at the SiO₂-Si interface, and the effects of radiation bias field on plasmons in the SiO₂-Si interface are observable. Finally, the mechanism of experimental results is analyzed by the quantum effect of plasmon excited by the photoelectron.     

Optical and structural properties of Mg-ion implanted GaN nanowires

Mg⁺ ions (60 keV) were implanted into GaN nanowires (NWs) with total fluxes of 5 × 10¹²-5 × 10¹⁴ cm⁻² followed by thermal annealing at 700 °C in N₂ ambient. Transmission electron microscopic images showed amorphous layer formation and defect accumulation in the higher dose Mg-implanted GaN NWs after annealing. Photoluminescence spectra (300 K) of the annealed Mg-implanted GaN NWs exhibited near-band-edge (NBE) emission, donor-acceptor pair (DAP) emission, and defect-related yellow luminescence. With increasing dose, the NBE and DAP emissions are red shifted. Similar phenomena were observed in samples implanted with Ar to produce similar amounts of lattice disorder. The NWs show a much higher sensitivity to defect accumulation than GaN thin films.     

Shift in room-temperature photoluminescence of low-fluence Si+-implanted SiO2 films subjected to rapid thermal annealing

Abstract

We experimentally demonstrate the effect of the rapid thermal annealing (RTA) in nitrogen flow on photoluminescence (PL) of SiO₂ films implanted by different doses of Si⁺ ions. Room-temperature PL from 400-nm-thick SiO₂ films implanted to a dose of 3×10¹⁶ cm^?2 shifted from 2.1 to 1.7 eV upon increasing RTA temperature (950–1150 °C) and duration (5–20 s). The reported approach of implanting silicon into SiO₂ films followed by RTA may be effective for tuning Si-based photonic devices.     

Effects of annealing temperature on buried oxide precipitates in He and O co-implanted Si

The effects of the processing conditions on the formation of buried oxide precipitates in He and O co-implanted Si were investigated by the combination of Fourier transform infrared (FTIR) absorption spectroscopy, depth-resolved positron annihilation Doppler spectroscopy, and transmission electron microscopy (TEM). Silicon wafers were implanted with 50 keV He ions at a fluence of 2 × 10¹⁶ cm⁻² and subsequent 150 keV O ions at a fluence of 2 × 10¹⁷ cm⁻². For comparison, reference Si wafers were only implanted with 150 keV O ions. The Si–O–Si stretching frequency increases while the peak width of the Si–O–Si stretching absorption band decreases with an increase in annealing temperature. After the same annealing, the peak width of the Si–O–Si stretching absorption band in the He and O co-implanted sample is significantly larger than that in the reference sample. Two kinds of vacancy-type defects are observed by positrons, i.e., vacancy-type defects and vacancy-oxygen complexes. The characteristic S values of vacancy-type defects and vacancy-type complexes in the He and O co-implanted sample are smaller than those of the reference sample. In addition, the thickness of the buried oxide layer in the He and O co-implanted sample is smaller than that in the reference sample. After annealing at 1473 K, the O content is larger in the He and O co-implanted sample compared to that in the reference sample.     

HI-ERDA, Micro-Raman and HRXRD studies of buried silicon oxynitride layers synthesized by dual ion implantation

Silicon oxynitride (Si_xO_yN_z) buried insulating layers were synthesized by dual implantation of nitrogen (¹⁴N⁺) and oxygen (¹⁶O⁺) ions sequentially into single crystal silicon in the ratio 1:1 at 150 keV to ion-fluences ranging from 1 × 10¹⁷ to 5 × 10¹⁷ cm⁻². Heavy ion elastic recoil analysis (HI-ERDA) studies of as implanted samples show Gaussian like distributions of nitrogen and oxygen. After annealing at 800 °C, both the nitrogen and oxygen distributions appear as flat plateau like regions near projected range showing the formation of a continuous buried oxynitride layer. Micro-Raman study of as implanted samples shows a broad peak at 480 cm⁻¹ for all fluences. It signifies a complete amorphization of silicon due to high fluence implantation. The annealing at 800 °C results in the reduction of the intensity of the broad peak observed at 480 cm⁻¹ and also gives rise to an additional peak at 517 cm⁻¹. It shows partial recrystallization of damaged silicon due to annealing. The X-ray rocking curves studies from high-resolution X-ray diffraction (HRXRD) of the samples implanted with different fluences have also further confirmed partial recrystallization of damaged silicon on annealing.     

Preparation, dielectric and ferroelectric properties of Pb5Ge3O11 and Pb5Ge2.85Si0.15O11 thin films fabricated by sol-gel process

Lead germanate-silicate (Pb₅Ge_2.85Si_0.15O₁₁) ferroelectric thin films were successfully fabricated on Pt/Ti/SiO₂/(100)Si substrates by the sol-gel process. The thin films were fabricated by multi-coating at preheating temperatures of 350 and 450 °C. After annealing the thin films at 600 °C, the films exhibited c-axis preferred orientation. The degree of c-axis preferred orientation of the thin films preheated at 350 °C was higher than that of films preheated at 450 °C. Grain growth was influenced by the annealing time. The thin films exhibited a well-saturated ferroelectric P-E hysteresis loop when preheated at 350 °C and annealed at 600 °C for 1.5 h. The values of the remanent polarization (Pr) and the coercive field (Ec) were approximately 2.1 μC/cm² and 100 kV/cm, respectively.     

Synthesis of monodisperse spherical core-shell SiO2-SrAl2Si2O8: Eu2+ phosphors by hydrothermal homogeneous precipitation method

Nanocrystalline SrAl₂Si₂O₈ :Eu²⁺ phosphor layers were coated on nonaggregated, monodisperse and spherical SiO₂ particles using a hydrothermal homogeneous precipitation. After annealing at 1100 °C, core-shell SiO₂@SrAl₂Si₂O₈ :Eu²⁺ particles were obtained. They were characterized with x-ray diffraction (XRD), scanning electron microscopy, transmission electron microscopy and photoluminescence techniques. XRD analysis confirmed the formation of SiO₂ @SrAl₂Si₂O₈ :Eu²⁺ particles; it indicated that the SrAl₂Si₂O₈ :Eu²⁺ shells on SiO₂ particles consisted of hexagonal crystallites. The core-shell phosphors obtained are well-dispersed submicron spherical particles with a narrow size distribution. The thickness of the coated layer is approximately 20–40 nm. Under ultraviolet excitation (361 nm), the particles emit blue light at about 440 nm due to the Eu²⁺ ions in their shells.     

Enhancement of SiN-induced compressive and tensile strains in Si free-standing microstructures by modulation of SiN network structures

Strain-induced enhancement of carrier mobility is essential for achieving high-speed transistors. The effects of thermal-annealing (temperature: 400-1150 °C) and ultraviolet (UV) laser-annealing (wavelength: 248 nm, temperature: 30-400 °C) on strain-enhancement in Si-pillars covered with Si₃N₄ stress-liners by plasma-enhanced chemical vapor deposition are investigated. Before annealing, the Si₃N₄ stress-liners induce a tensile strain (~ 0.5%) in Si. After thermal-annealing (> 800 °C), the strain becomes highly compressive (> ~ 0.4%), because of dehydrogenation-induced structural relaxation in Si₃N₄ films. On the other hand, the tensile strain becomes large (>~0.7%) after UV laser-annealing at 400 °C, due to non-equilibrium dehydrogenation in Si₃N₄ films. This strain-enhancement technique is useful for the realization of advanced high-speed three-dimensional transistors.     

Thermal treatment effects on interfacial layer formation between ZrO2 thin films and Si substrates

This paper describes the growth condition of stoichiometric ZrO₂ thin films on Si substrates and the interfacial structure of ZrO₂ and Si substrates. The ZrO₂ thin films were prepared by rf-magnetron sputtering from Zr target with mixed gas of O₂ and Ar at room temperature followed by post-annealing in O₂ ambient. The stoichiometric ZrO₂ thin films with smooth surface were grown at high oxygen partial pressure. The thick Zr-free SiO₂ layer was formed with both Zr silicide and Zr silicate at the interface between ZrO₂ and Si substrate during the post-annealing process due to rapid diffusion of oxygen atoms through the ZrO₂ thin films. After post annealing at 650-750 °C, the multi-interfacial layer shows small leakage current of less than 10⁻⁸ A/cm² that is corresponding to the high-temperature processed thermal oxidized SiO₂.     

Interdiffusion and growth of chromium silicide at the interface of Cr/Si(As) system during rapid thermal annealing

In this work, the solid-state reaction between a thin film of chromium and silicon has been studied using Rutherford backscattering spectroscopy, X-ray diffraction and the sheet resistance measurements. The thickness of 100 nm chromium layer has been deposited by electronic bombardment on Si (100) substrates, part of them had previously been implanted with arsenic ions of 10¹⁵ at/cm² doses and an energy of 100 keV. The samples were heat treated under rapid thermal annealing at 500 °C for time intervals ranging from 15 to 60 s. The rapid thermal annealing leads to a reaction at the interface Cr/Si inducing the formation and the growth of the unique silicide CrSi₂, but no other phase can be detected. For samples implanted with arsenic, the saturation value of the sheet resistance is approximately 1.5 times higher than for the non-implanted case.     

Fe3Si nanodots epitaxially grown on Si(111) substrates using ultrathin SiO2 film technique

Ultrahigh density (> 10¹² cm⁻²) Fe₃Si nanodots (NDs) are epitaxially grown on Si(111) substrates by codeposition of Fe and Si on the ultrathin SiO₂ films with ultrahigh density nanovoids. We used two kinds of methods for epitaxial growth: molecular beam epitaxy (MBE) and solid phase epitaxy. For MBE, low temperature (< 300 °C) growth of the Fe₃Si NDs is needed to suppress the interdiffusion between Fe atoms deposited on the surfaces and Si atoms in the substrate. These epitaxial NDs exhibited the ferromagnetism at low temperatures, which were expected in terms of the application to the magnetic memory device materials.     

Si nanocrystals formation in SiO2 by ion implantation: The effects of RTA and UV irradiation on photoluminescence

Si ion implantation was widely used to synthesize specimens of SiO₂ containing supersaturated Si and subsequent high temperature annealing induces the formation of embedded luminescent Si nanocrystals. In this work, the potentialities of excimer UV-light (172 nm, 7.2 eV) irradiation and rapid thermal annealing (RTA) to enhance the photoluminescence and to achieve low temperature formation of Si nanocrystals have been investigated. The Si ions were introduced at acceleration energy of 180 keV to fluence of 7.5 × 10¹⁶ ions/cm². The implanted samples were subsequently irradiated with an excimer-UV lamp. After the process, the samples were rapidly thermal annealed before furnace annealing (FA). Photoluminescence spectra were measured at various stages at the process. We found that the luminescence intensity is strongly enhanced with excimer-UV irradiation and RTA. Moreover, effective visible photoluminescence is found to be observed even after FA at 900 °C, only for specimens treated with excimer-UV lamp and RTA. Based on our experimental results, we discuss the effects of excimer-UV lamp irradiation and RTA process on Si nanocrystals related photoluminescence.