Ni80Cr20合金薄膜制备影响因素的试验研究

利用直流磁控溅射的方法制备Ni80Cr20合金薄膜,以氩气流量、氩气工作压强、溅射功率作为三因素进行正交试验,在溅射时间相同的条件下分别测试了薄膜厚度、表面粗糙度、电阻率并进行了极差分析。分析结果表明:在一定范围内,氩气工作压强与溅射功率对薄膜厚度的影响较大;在氩气工作压强为3.0Pa时,薄膜厚度与溅射功率近似成正比关系;随着氩气流量的增大,Ni80Cr20薄膜厚度呈现先增大后减小的趋势;在氩气流量为50cm~3/min时,薄膜厚度达到最大值;各因素对薄膜表面粗糙度及电阻率影响不明显。     

磁控溅射制备不锈钢薄膜研究

研究了磁控溅射镀膜工艺参数中溅射功率、溅射时间以及真空度等对不锈钢薄膜制备的影响，通过对获得的不锈钢薄膜层进行金相分析与其他性能测试发现：试验中溅射功率为100W、溅射时间为2h、真空度为0．08Pa、氩气压力为1．5MPa的条件下制得的薄膜性能最佳。     

工艺参数对直流磁控溅射法制备氧化铝薄膜的试验研究北大核心

采用直流磁控溅射法在载玻片和不锈钢基底上制备某设计要求的氧化铝薄膜,首先采用单因素法分别分析溅射功率、氧气流量、工作压强、负偏压及本底真空度等制备参数对薄膜沉积速率的影响;在此基础上设计正交试验,研究优化范围内溅射功率、氧气流量、工作压强对沉积速率的影响,并进行极差与方差分析。结果表明,在一定工艺参数范围内,随着溅射功率的增加,薄膜的沉积速率不断增大;氧气流量增加时薄膜的沉积速率不断下降;随着工作压强的增大,薄膜的沉积速率先增大后减小,在1.0 Pa时达到最大速率;加载的负偏压增加时,薄膜的沉积速率不断降低;本底真空度提高时薄膜的沉积速率不断增大;通过使用XRD衍射仪对制备的薄膜进行物相检测,研究结果表明,常温下不同氧气流量制备的氧化铝薄膜均为非晶态;获取了制备所需薄膜的较优的制备工艺。     

基于MEMS压力传感器的研究

提出了一种新型高精度高温压力传感器,此压力传感器以硅片为弹性片,敏感材料为Ni-Cr合金,利用溅射合金薄膜压力敏感元件和先进的加工工艺技术制作而成。对溅射薄膜压力传感器弹性膜应变进行理论和三维有限元分析,再用先进的软件ANSYS模拟弹性膜片的应变分布,研究应变与膜的大小、厚度的关系。最后确定敏感电阻的最佳布置区域,提高了传感器的灵敏度。     

工艺参数对直流磁控溅射法制备氧化铝薄膜的试验研究

采用直流磁控溅射法在载玻片和不锈钢基底上制备某设计要求的氧化铝薄膜,首先采用单因素法分别分析溅射功率、氧气流量、工作压强、负偏压及本底真空度等制备参数对薄膜沉积速率的影响;在此基础上设计正交试验,研究优化范围内溅射功率、氧气流量、工作压强对沉积速率的影响,并进行极差与方差分析。结果表明,在一定工艺参数范围内,随着溅射功率的增加,薄膜的沉积速率不断增大;氧气流量增加时薄膜的沉积速率不断下降;随着工作压强的增大,薄膜的沉积速率先增大后减小,在1.0 Pa时达到最大速率;加载的负偏压增加时,薄膜的沉积速率不断降低;本底真空度提高时薄膜的沉积速率不断增大;通过使用XRD衍射仪对制备的薄膜进行物相检测,研究结果表明,常温下不同氧气流量制备的氧化铝薄膜均为非晶态;获取了制备所需薄膜的较优的制备工艺。     

ECR结合磁控溅射——制备DLC薄膜的新方法

介绍了新型的结合电子回旋共振(ECR)微波等离子体气相沉积与磁控溅射镀膜特点的ECR-650型镀膜系统,并利用该系统通过溅射石墨靶和金属钛靶在不锈钢基底上制备了具有Ti/TiNx/TiNxCy中间层结构的C薄膜。由于镀膜工艺问题,得到的薄膜主要由石墨构成。研究了制备时不同的气压和氩气分压对薄膜表面形貌、硬度等的影响。     

射频溅射工艺对WSx薄膜摩擦性能的影响

采用射频溅射法以3Cr13马氏体不锈钢为基片制备了硫化钨薄膜.通过物相分析和表面形貌观察,以及测定微区化学成分、结合力和摩擦因数,研究了溅射功率、工作压力和沉积时间等溅射工艺条件对薄膜摩擦性能的影响.结果表明通过射频溅射法可获得非晶态WSx薄膜,薄膜的S/W比一般小于2,并受溅射工艺影响较为明显,随溅射功率的升高逐渐降低,随溅射时间的延长明显升高.薄膜结合力受溅射工艺影响并不显著.通过射频溅射所获得薄膜的摩擦因数在一定范围内与其硫钨比成反比.     

全柔性热膜微传感器阵列制造工艺及性能优化

利用MEMS微加工技术,以镍作为热敏材料,在柔性衬底上制作出了全柔性热膜微传感器阵列,具有软性可弯、便于曲面贴附实现分布测量、高灵敏度的特点。结合制备工艺与性能测试,首次系统性分析掌握了氩气压强、衬底温度、溅射功率、退火温度等工艺参数对电阻温度系数的影响规律。通过优化工艺参数以提高柔性热膜微传感器的电阻温度系数,使其达到了4640 ppm/℃,并且保持了较好的线性度。     

射频磁控溅射法制备氮化硼薄膜

采用射频磁控溅射方法在T10钢表面获得了氮化硼薄膜。借助光学显微镜、摩擦磨损试验仪和划痕试验仪等研究了溅射时间、溅射功率以及中间层对薄膜性能的影响。结果表明：氮化硼薄膜的摩擦因数约为钢基材料的一半,中间层镍磷合金的加入使薄膜结合力显著提高。     

钛合金基底NiCr薄膜测力传感器的设计制作与检测

为了获得性能优良的切削力测量传感器,设计了两种结构的切削力测量用镍铬合金薄膜传感器。采用相同工艺分别制作了Ti6Al4V和45钢材料的基片,并对比分析了基片的表面质量。优选出钛合金作为基底,在其上制备了所设计的两种结构的薄膜传感器样品,测量了传感器敏感栅尺寸、薄膜电阻率、电阻栅薄膜厚度、传感器电阻值,分析了传感器电阻值的影响因素。     

内燃机活塞表面瞬态温度传感器的研制

针对内燃机活塞表面温度变化迅速的特点,研制了一种瞬态温度传感器用于测量活塞表面温度。采用直流脉冲磁控溅射的方法将NiCr薄膜直接溅射沉积在高温烧结后嵌有NiCr、NiSi丝的陶瓷元件端面,NiCr薄膜外侧溅射Si3N4保护膜。传感器外壁选用带螺纹的304不锈钢作为铠装套筒。采用自行研制的薄膜热电偶静动态标定系统对所研制的瞬态温度传感器进行标定,结果表明:所研制的传感器在50~400℃范围内具有良好的线性和热稳定性,其塞贝克系数在39~41μV/K之间,非线性误差小于0.34%,重复性好;热接点薄膜厚度为355nm时,传感器的响应时间为41.7μs,且响应时间随着薄膜厚度的增大而增加;该瞬态温度传感器可以满足曲轴转速为1800r/min的内燃机活塞表面瞬态温度测试的需求。     

Modeling analysis and experimental study on the optical fiber hydrogen sensor based on Pd-Y alloy thin film

The failure of hydrogen sensor with palladium film is primarily the phase transition of PdH. To restrain this, a novel palladium and yttrium (Pd-Y) alloy film was prepared by the co-sputtering method and was used to design an optical fiber hydrogen sensor. A sensor model was established based on the optical film matrix method. The relationship between the reflectivity of the film and the hydrogen concentration was discussed. The experimental results show that this sensor is superior to the traditional sensor with Pd in shortening the response and recovery time, restraining drift, and promoting repeatability. The Pd-Y alloy film is an extremely promising material for detecting hydrogen.     

磁控溅射Ni56Mn27Ga17合金薄膜的光学反射特性研究

Ni-Mn-Ga磁性形状记忆合金薄膜是非常有用的多功能材料,为考察其光学反射特性,采用磁控溅射技术在单晶硅衬底上沉积了Ni56Mn27Ga17合金薄膜,并对其表面形貌和光学反射特性进行研究。研究结果表明,薄膜的表面粗糙度随退火温度的升高而增大;在300～800nm波长范围内,薄膜反射率均随波长的减小而降低,且薄膜整体谱线范围内的反射率随退火温度的升高而降低。     

Ni80Cr20薄膜的光谱中性度优化

金属材料薄膜的光学常数会随膜层厚度发生变化,从而导致薄膜的光谱特性也发生变化。在制备工艺中,不论是热蒸发工艺还是溅射工艺,Ni80Cr20（简称镍铬）薄膜在较“薄”和较“厚”的时候光谱中性度都较差,并且其光谱特性趋势相反。理论计算结果表明,增加镍铬合金中Cr（铬）的比份可以提高“薄”膜的中性度,而“厚”膜则需要提高Ni（镍）的比份。针对光谱特性相反的“薄”膜和“厚”膜,分别提出了“有意分馏”和增加镍的比例的方法来改善光谱的中性度。试验结果表明：为改善膜层的中性度,低密度时可采用“有意分馏”的热蒸发工艺来提高膜层中铬的含量;而高密度时则可以镀制纯镍。“有意分馏”的热蒸发工艺可将光谱中性度提升至1.8%;纯镍工艺可将OD4的光谱中性度提升至4.6%。所提出的改进的镀膜工艺是有效的,并为光谱检测、光纤通讯、摄影摄像等应用领域的衰减片制备工艺的改进提供了参考。     

用于微机械的形状记忆合金薄膜工艺研究

形状记忆合金薄膜以其功密度高、输出力和位移大成为微型机电系统领域最有潜力的微驱动材料之一。研究了丝材冷轧和溅射薄膜工艺 ,获得了理想的 Ti Ni薄膜 ,对于溅射工艺 ,给出了增加溅射薄膜中 Ti含量的一种新途径 ,并应用原子力显微镜对薄膜进行了微观形貌分析。     

Assessment of adhesion between thin film and silicon based on a scratch test

Thin film coatings are commonly utilized to prevent wear, modify surface properties, and manipulate the frictional behavior of various mechanical systems. The behavior of a coating has a direct effect on the life as well as performance of the system. However, the coating itself is subject to damage, and the quality of the coating is related to the adhesion characteristics between the coating and the substrate. Therefore, a quantitative assessment of the adhesion properties of thin film is important to guarantee the reliability of not only the thin film but also the mechanical system. In this study, ramp loading scratch tests were performed to assess the adhesion characteristics of Ag and ZnO thin films coated on a silicon wafer. Silver thin film, deposited by sputtering, and ZnO thin film, fabricated by a sol-gel method, were used as scratch specimens. Scratch tests using a diamond tip were performed with a continuously increasing normal force. During the scratch test, the normal and frictional forces were monitored to assess the integrity of the film. The Benjamin and Weaver model commonly used for obtaining the horizontal force during the scratching of films coated on a substrate showed large discrepancies with the experimental results. In this work, the model was modified with a plowing term to minimize the difference between the experimental and theoretical results. Using the modified model, the experimental results could be predicted with an accuracy of about 10%.     

Influence of Mg doping on the morphology and optical properties of ZnO films for enhanced H2 sensing

Highly oriented ZnO and Mg doped ZnO thin films were fabricated on Al₂O₃ substrate by sputtering at room temperature. The effect of Mg doping on the structural, optical, and morphological properties of ZnO film was investigated. The intensity of (002) peak in X‐ray diffraction measurements revealed the influence of Mg doping on the crystallinity and orientation of ZnO film. Photoluminescence (PL) results show that the Ultraviolet (UV) emission peak was shifted to lower wavelength side for Mg:ZnO film indicating the possibility for quantum confinement. UV–vis–NIR optical absorption revealed an improvement in optical transmittance from 70 to 85%, and corresponding optical band gap from 3.25 to 3.54 eV. Atomic force microscope (AFM) images revealed the nano‐size particulate microstructure of the films. The surface topography of Mg doped ZnO film confirmed decreased grain size with large surface roughness and increased surface area, favorable for sensing. Pure ZnO and Mg doped ZnO film were used as active layer and tested for its sensing performance to hydrogen. Compared to undoped ZnO, 22 at.% Mg doped ZnO film showed much higher sensor response to H₂ at a concentration as low as 200 ppm and at a lower operating temperature of 180°C. A linear sensor response was observed for H₂ concentration in the range of 100–500 ppm. Microsc. Res. Tech. 76:1118–1124, 2013. © 2013 Wiley Periodicals, Inc.     

氧氩比对ZnO薄膜晶体结构和导电性能的影响

探讨氧氩比对ZnO薄膜晶体结构和导电性能的影响。利用直流反应磁控溅射法在硅衬底上沉积C轴择优取向的ZnO晶体薄膜,在其他反应条件不变的情况下,改变氩氧比,测量了样品的晶体结构和导电性能。随着反应气氛中氩气含量的增加,(002)面衍射峰的强度有所提高,说明薄膜的结晶质量有所改善,衍射峰略向θ角减小的方向移动。随着反应气氛中氩气含量的增多、氧气含量的减少,ZnO薄膜的方块电阻明显减小,说明薄膜的电阻率随反应气氛中氩气的增加而明显减小。