Continuously tuned external cavity semiconductor laser

Continuous tuning (no mode hops) of a grating-tuned external-cavity semiconductor laser by rotation of the grating about a carefully selected point is analyzed and demonstrated using a laser containing a prism beam expander. The analysis predicts the continuous tuning range as a function of pivot-point position and is used to select the point for maximum continuous tuning range. Because dispersive optical elements in the cavity were found to limit the continuous tuning range, the model was modified to include dispersion to first order. The dispersion correction improved the maximum observed tuning range of the 1300-nm-wavelength laser from 600 GHz to nearly 3000 GHz. Details of the cavity and mechanical design as well as pivot-point tolerances are also included     

双波长可调外腔半导体激光器

提出了一种基于体布拉格光栅（VBG）和横向啁啾体布拉格光栅（TCVBG）组合的双光栅外腔半导体激光器,该外腔半导体激光器采用反射率15%的体光栅和反射率17%的啁啾体布拉格光栅作为反馈元件和模式选择元件,实现特定波长的选择和调谐,实验研究了外腔激光器的功率-电流特性、光谱特性和波长调谐特性。实验结果表明:双光栅外腔半导体激光器最大输出功率为1.96 W,斜率效率为0.94 W/A,外腔效率达到78%。输出光谱为双波长,一个波长为808.6 nm,另一个波长连续可调,通过改变横向啁啾体光栅的位置,该波长可从800 nm调谐至815 nm,可调范围达15 nm,在整个可调范围内两个波长的谱线宽度（FWHM）均小于0.3 nm。     

外腔半导体激光器的线宽

本文用量子力学的方法求得了外腔半导体激光器(LD)的线宽,给出了抑制LD线宽的最佳反馈条件。     

外腔半导体激光器宽带调谐特性

本文分析了强反馈外腔半导体激光器的宽带频率调谐特性,得到了最大频率调谐范围公式,利用1.5μm外腔半导体激光器实现了1.45μm至1.57μm范围内的波长宽带调谐(120nm调谐范围)。     

自聚焦棒外腔单频半导体激光器

本文提出了用振幅耦合因子描述激光器谐振腔与自聚焦棒光波导结构的差异及耦合腔的衍射损耗;讨论了自聚焦棒相对激光器作微小偏移对振幅耦合因子的影响.对自聚焦棒外腔半导体激光器的选模理论进行了实验验证.实现了单纵模运转,其边模抑制比大于35dB,线宽小于21MHz,最大的波长调谐范围为11nm.     

Stability analysis for a semiconductor laser in an external cavity

A detailed theoretical analysis of stability is presented for a semiconductor laser in an external cavity. The limits of stable operation are determined as a function of the external cavity parameters and the linewidth enhancement factor α. Instability is related to jumps of the laser frequency between external cavity modes (frequency bistability) or to feedback-induced intensity pulsations due to the carrier density dependence of the refractive index. The limit of bistability is derived from the steady-state solutions of the rate equations and the intensity pulsation limit is obtained from a small-signal analysis. This analysis also gives the location of zeros in the system determinant and the resulting FM noise spectrum. For practical applications we emphasize the determination of the stable tuning range for the phase in the external cavity and the classification of the possible types of instability for various feedback levels.     

光泵浦外腔半导体激光器的研究进展

从谐振腔和半导体增益介质的角度介绍了光泵浦外腔面发射半导体激光器的基本结构,评述了国内外在该领域的最新研究进展,探讨了该类型激光器在大功率、小型化技术方面的发展前景。     

Spatially singlemode broad-area semiconductor laser with planar external cavity

A broad-area laser diode combined with a planar external waveguide cavity operates in the fundamental mode and reshapes the output emission into a circular 15/spl deg/ beam. A 500 /spl mu/m-long by 40 /spl mu/m-wide laser diode with uncoated facets coupled with the uncoated ModeReShaper (MRS) planar chip has a coupling efficiency of /spl sim/40% and stabilised the fundamental mode at drive currents up to three-times threshold.     

Minimum bit rate of DPSK transmission for semiconductor laser with a long external cavity and strong linewidth reduction

A numerical model for a laser diode, weakly coupled to an external cavity, is presented. Using this model, the actual frequency noise spectrum is considered rather than a white frequency noise for estimating the minimum bit rate in a differential-phase-shift-keying (DPSK)-system. Despite possible linewidth reductions by up to 200 with long external cavities, the minimum bit rate (BER = 10^-9) remains nearly unchanged. However, a longer laser cavity (approx600 mum) connected to an external cavity of moderate length ( ≈10 cm) yields a significant reduction of the minimum bit rate (BER = 10^-9) for DPSK-systems at low feedback levels. If more stringent criteria are applied (e.g., receiver penalty < 1 dB) the minimum bit rate remains high also for longer laser cavities.     

外腔长度变化对光纤光栅外腔LD激射波长的影响

密集波分复用(DWDM)光纤通信系统对光源的波长稳定性有很高的要求。主要就可供DWDM系统选用的光源之一光纤光栅外腔半导体激光器(FGESL)的波长稳定性进行讨论。通过计及半导体激光器(LD)、外腔及光纤光栅(FG)三者的共同作用,根据光纤光栅外腔半导体激光器的相位条件确定FGESL的激光纵模分布后,理论上研究了FGESL的激射波长随FG外腔长度的变化。结果表明,外腔较短时,外腔长度的微小变化可以导致FGESL的激射波长产生显著的变化;外腔较长(大于10 cm)时,外腔长度的变化对FGESL的激射波长基本没有影响。     

一种可降低Littman-Metcalf光栅外腔半导体激光器衍射损耗的结构设计

基于原有Littman-Metcalf型光栅外腔半导体激光器的工作原理,设计了一种可以降低衍射损耗的外腔结构。在Littman-Metcalf结构的基础上增加一个反射镜,将闪耀光栅二次衍射产生的零级衍射光反馈回半导体激光器本征腔。推导了新结构模型外腔损耗的表达式,通过等效腔的概念对两种结构激光器的外腔损耗、阈值电流、输出线宽以及输出功率进行了仿真分析。结果表明：将二次衍射产生的零级光反馈回有源区可有效降低Littman-Metcalf结构激光器的外腔损耗,提高了系统的耦合效率,从而降低阈值电流,提高了激光器的输出功率。同时,由于提高了外腔反射效率,该外腔结构进一步压窄激光器的输出线宽。对影响低损耗Littman-Metcalf外腔激光器输出线宽以及输出功率的因素(端面反射率、内外腔长、闪耀光栅衍射效率以及反射镜反射率等)也进行了仿真分析,为后期激光器制作提高了理论指导。     

102 km optical fibre transmission experiments at 1.52 ?m using an external cavity controlled laser transmitter module

The operation of a 1.52 ?m external cavity controlled laser transmitter module over 102 km of monomode fibre at 140 Mbit/s is reported. The laser emission is restricted to a single longitudinal mode by the external cavity, resulting in a system penalty of less than 0.5 dB.     

光纤光栅外腔半导体激光器波长调谐方法研究

可调谐光纤光栅外腔半导体激光器（FBG-ECL）激射波长由光纤光栅布喇格波长决定,调谐光纤光栅布喇格波长可以改变激光器的激射波长.重点介绍采用轴向应力、径向应力和温度对光纤光栅布喇格波长的调谐.布喇格中心波长的偏移与轴向应力、径向应力和温度等变化量均呈极好的线性比例关系,且在较大的测量范围内一直保持线性关系.详细说明了光纤光栅外腔半导体激光器采用这三种方法调谐时的特点、适用范围,并对它们的性能进行了比较,给出在不同条件下适合的调谐方法.     

外腔半导体激光器的设计与高次谐波稳频

首先讨论了半导体激光器外腔结构参量对激光连续可调范围影响的理论计算方法,给出了Littrow结构外腔半导体激光器调谐范围的计算结果。然后介绍了半导体激光器外腔结构参量的具体设计,利用该设计得到了出射激光线宽小于1 MHz、连续可调谐范围可达3 GHz的780 nm波段外腔半导体激光器。接着讨论了利用腔外饱和吸收谱的三次谐波稳频方法对半导体激光器进行稳频,优化激光频率短期稳定度的方法。最后根据该优化方法设计出稳频系统对半导体激光器进行稳频,得到了稳定度达到10-12量级的半导体激光输出。     

可调谐双波长半导体外腔激光器性能研究

提出并实现了利用笼式共轴搭建的傅里叶变换外 腔结构(FTECS)产生大范围电流下双模式强度保持相等 的双波长激光器,通过改变电流实现输出功率连续可调的双模输出,可以作为混频太赫兹(THz)源的种 子源,对多波长脉冲设备的研究有借鉴意义。实验结果表明,在阈值电流8mA之上从1.45I_th到3.85I_th 范围内,用压电陶瓷推动镀金条镜改变反馈,实现了间距1THz的双模输出, 双模式峰值强度差值小于 0.07dB,边模抑制比(SMSR)可以达到 30dB以上。进一步研究了双模式的峰值强度与条镜位置和激光器电 流变化之间的关系,对后续小型化结构设计相关可快速调谐性和稳定性等参考。 。     

High pak power femtosecond pulses from modelocked semiconductor laser in external cavity

The generation of high peak power femtosecond pulses from an all semiconductor laser system is demonstrated. The system is based on a passively modelocked two-section laser diode in an external cavity, a tapered amplifier and a compact external pulse compressor. Pulse durations are achieved below 600 fs with an average optical power above 500 mW at a repetition rate of 330 MHz. This corresponds to a peak power of 2.5 kW, which is the highest value reported for an all semiconductor ultrafast laser system so far.     

Reliability estimate for semiconductor laser module ILPN-134

The reliability of the ILPN-134 is investigated laser module. The technique, which allows one to estimate what contribution is introduced by individual processes of aging of the laser diode and the optical system to the degradation of the laser module ILPN-134, is suggested. The activation energies of degradation processes, the standard deviations, and the failure rates of the laser diode and the optical system are determined.     

500W光纤耦合半导体激光模块

针对半导体激光器在工业领域的应用和光纤耦合可以实现柔性传输的特点,设计了光纤耦合半导体激光模块。采用光束整形技术、空间合束、偏振合束和光纤耦合等技术,将两组共10个整形后的半导体标准阵列进行合束,扩束后耦合入芯径400m、数值孔径0.22的镀增透膜光纤。在工作电流70 A时,光纤耦合前功率为545 W,光纤耦合后功率为518 W,光纤耦合效率高于95%,得到很高的光纤耦合效率,电光转换效率为43%,为下一步千瓦级光纤耦合半导体激光器的制备奠定了基础。     

Hysteresis and multistable behaviour in a polarisation self-modulated external ring cavity semiconductor laser

The polarisation self-modulated laser exhibits various 'polarisation modes' which can be switched among themselves by varying the applied voltage of the intra-cavity electro-optic waveplate. Strong hysteresis tendencies are displayed in this switching behaviour and multistability has been observed. Switching among the modes can also be simply initiated by perturbing the diode laser with short current pulses.<>     

Frequency stabilization in FBG external cavity semiconductor laser based on acetylene absorption method

A frequency-stabilized 1.53 μm FBG external-cavity semiconductor laser by using acetylene absorption is presented and its basic principles are introduced. Graded refractive index fiber and pigtailed fiber are used in the absorption air chamber to enhance the coupling stability. The impact of the background power is eliminated by using the third-harmonic mode-locking technique. A lock-in amplifier is utilized to ensure that the output laser wavelength is locked at the C2H2 absorption line of 1530.37 nm. The frequency stability reaches 10-8 within 24 h.