Continuously tuned external cavity semiconductor laser

Continuous tuning (no mode hops) of a grating-tuned external-cavity semiconductor laser by rotation of the grating about a carefully selected point is analyzed and demonstrated using a laser containing a prism beam expander. The analysis predicts the continuous tuning range as a function of pivot-point position and is used to select the point for maximum continuous tuning range. Because dispersive optical elements in the cavity were found to limit the continuous tuning range, the model was modified to include dispersion to first order. The dispersion correction improved the maximum observed tuning range of the 1300-nm-wavelength laser from 600 GHz to nearly 3000 GHz. Details of the cavity and mechanical design as well as pivot-point tolerances are also included     

外腔半导体激光器宽带调谐特性

本文分析了强反馈外腔半导体激光器的宽带频率调谐特性,得到了最大频率调谐范围公式,利用1.5μm外腔半导体激光器实现了1.45μm至1.57μm范围内的波长宽带调谐(120nm调谐范围)。     

自聚焦棒外腔单频半导体激光器

本文提出了用振幅耦合因子描述激光器谐振腔与自聚焦棒光波导结构的差异及耦合腔的衍射损耗;讨论了自聚焦棒相对激光器作微小偏移对振幅耦合因子的影响.对自聚焦棒外腔半导体激光器的选模理论进行了实验验证.实现了单纵模运转,其边模抑制比大于35dB,线宽小于21MHz,最大的波长调谐范围为11nm.     

Stability analysis for a semiconductor laser in an external cavity

A detailed theoretical analysis of stability is presented for a semiconductor laser in an external cavity. The limits of stable operation are determined as a function of the external cavity parameters and the linewidth enhancement factor α. Instability is related to jumps of the laser frequency between external cavity modes (frequency bistability) or to feedback-induced intensity pulsations due to the carrier density dependence of the refractive index. The limit of bistability is derived from the steady-state solutions of the rate equations and the intensity pulsation limit is obtained from a small-signal analysis. This analysis also gives the location of zeros in the system determinant and the resulting FM noise spectrum. For practical applications we emphasize the determination of the stable tuning range for the phase in the external cavity and the classification of the possible types of instability for various feedback levels.     

Spatially singlemode broad-area semiconductor laser with planar external cavity

A broad-area laser diode combined with a planar external waveguide cavity operates in the fundamental mode and reshapes the output emission into a circular 15/spl deg/ beam. A 500 /spl mu/m-long by 40 /spl mu/m-wide laser diode with uncoated facets coupled with the uncoated ModeReShaper (MRS) planar chip has a coupling efficiency of /spl sim/40% and stabilised the fundamental mode at drive currents up to three-times threshold.     

Minimum bit rate of DPSK transmission for semiconductor laser with a long external cavity and strong linewidth reduction

A numerical model for a laser diode, weakly coupled to an external cavity, is presented. Using this model, the actual frequency noise spectrum is considered rather than a white frequency noise for estimating the minimum bit rate in a differential-phase-shift-keying (DPSK)-system. Despite possible linewidth reductions by up to 200 with long external cavities, the minimum bit rate (BER = 10^-9) remains nearly unchanged. However, a longer laser cavity (approx600 mum) connected to an external cavity of moderate length ( ≈10 cm) yields a significant reduction of the minimum bit rate (BER = 10^-9) for DPSK-systems at low feedback levels. If more stringent criteria are applied (e.g., receiver penalty < 1 dB) the minimum bit rate remains high also for longer laser cavities.     

光纤光栅外腔半导体激光器波长调谐方法研究

可调谐光纤光栅外腔半导体激光器（FBG-ECL）激射波长由光纤光栅布喇格波长决定,调谐光纤光栅布喇格波长可以改变激光器的激射波长.重点介绍采用轴向应力、径向应力和温度对光纤光栅布喇格波长的调谐.布喇格中心波长的偏移与轴向应力、径向应力和温度等变化量均呈极好的线性比例关系,且在较大的测量范围内一直保持线性关系.详细说明了光纤光栅外腔半导体激光器采用这三种方法调谐时的特点、适用范围,并对它们的性能进行了比较,给出在不同条件下适合的调谐方法.     

102 km optical fibre transmission experiments at 1.52 ?m using an external cavity controlled laser transmitter module

The operation of a 1.52 ?m external cavity controlled laser transmitter module over 102 km of monomode fibre at 140 Mbit/s is reported. The laser emission is restricted to a single longitudinal mode by the external cavity, resulting in a system penalty of less than 0.5 dB.     

High pak power femtosecond pulses from modelocked semiconductor laser in external cavity

The generation of high peak power femtosecond pulses from an all semiconductor laser system is demonstrated. The system is based on a passively modelocked two-section laser diode in an external cavity, a tapered amplifier and a compact external pulse compressor. Pulse durations are achieved below 600 fs with an average optical power above 500 mW at a repetition rate of 330 MHz. This corresponds to a peak power of 2.5 kW, which is the highest value reported for an all semiconductor ultrafast laser system so far.     

Reliability estimate for semiconductor laser module ILPN-134

The reliability of the ILPN-134 is investigated laser module. The technique, which allows one to estimate what contribution is introduced by individual processes of aging of the laser diode and the optical system to the degradation of the laser module ILPN-134, is suggested. The activation energies of degradation processes, the standard deviations, and the failure rates of the laser diode and the optical system are determined.     

Hysteresis and multistable behaviour in a polarisation self-modulated external ring cavity semiconductor laser

The polarisation self-modulated laser exhibits various 'polarisation modes' which can be switched among themselves by varying the applied voltage of the intra-cavity electro-optic waveplate. Strong hysteresis tendencies are displayed in this switching behaviour and multistability has been observed. Switching among the modes can also be simply initiated by perturbing the diode laser with short current pulses.<>     

Effect of external cavity semiconductor laser phase noise on a DPSKheterodyne optical receiver

The effect of an external cavity semiconductor laser on the performance of a DPSK heterodyne optical system is evaluated. The actual shape of the frequency fluctuation spectral density of the optical source is taken into account, and a comparison with a PSK coherent heterodyne system is carried out     

Theory of active mode locking of a semiconductor laser in an external cavity

An analytical treatment is given for the active mode locking of a semiconductor laser in an external resonator. The width of the mode-locked pulses is obtained as a function of the laser and cavity parameters and the amount of frequency detuning. The effects of self-modulation and saturation are included in the treatment. The pulse output is compared with that obtained by a strong modulation of the laser diode with no external cavity.     

Multistripe array grating integrated cavity (MAGIC) laser: a new semiconductor laser for WDM applications

A novel semiconductor laser formed by monolithically integrating an array of active stripes with a passive planar waveguide bearing an etched-in diffraction grating is reported. Laser emission occurs from different stripes at different, precisely predetermined, wavelengths. It is expected that this laser will find widespread application in wavelength division multiplexed networks.<>     

Transient effects in external cavity semiconductor lasers

In several important applications of external cavity operated semiconductor lasers, including studies for FM optical communication and frequency stabilized lasers for coherent communication systems, the transient response of the laser is of crucial importance. In this letter, we present a first study of the transient optical response following a step current excitation applied to an AlGaAs laser operating in a dispersive external cavity. The study shows for the first time that, for optical feedback near the gain peak of the laser, a steady state is reached after only three roundtrips in the external cavity. However, for optical feedback far (∼100 Å) from the gain peak, 20 or more roundtrips are required before a steady state can be reached. It is also shown that under certain operation conditions the optical feedback can induce damped relaxation oscillations at each subsequent roundtrip in the external cavity.     

外腔半导体激光器的单纵模机制

本文建立了一种外腔半导体激光器单纵模机制的模相互作用模型。由于引入四波混频耦合项,模相互作用的效应对次级模的影响是对称的,均使次级模受到增益抑制。     

1.52μm,60kHz线宽光纤布拉格反射镜外腔半导体激光器

本文报道1.52μm光纤布拉格反射镜外腔窄线宽半导体激光器的制作和实验结果,已实现光谱线宽60kHz,边模抑制比优于30dB,输出功率>-5dBm,频率稳定度为50MHz。     

基于精密波长计的外腔半导体激光长期稳频系统

为抑制连续激光器的长期频率漂移,以精密波长计为参考频率标准,由计算机控制可实现连续激光无调制稳频.此方法从计算机获取波长计数据,利用数字比例积分微分(PID)计算出输出给激光器的反馈电压值,从而修正激光器腔长、实现激光器频率的锁定.此方法可用于目前商业激光器光谱范围内的任意波长,能在激光器频率可调节范围内任意频率点进行锁定.用此方法实现了对631 nm外腔半导体激光器的锁定,获得了1h频率不确定度为7.4 MHz、长期频率漂移率为±1.1 MHz/h的稳定锁定.     

解析式表示外腔半导体激光器的特征参量

用射线法研究了强反馈可调谐外腔式半导体激光器的阈值行为，导出了ＥＣＬＤ被财在不同波长振荡所需的阈值载流子数密度外腔长度及阈值电流的解析表达式，也得到了不同电流ＥＣＬＤ的调谐输出功率及载流子密度的表达式。     

Vertical cavity surface-emitting semiconductor laser with CWinjection laser pumping

Room-temperature CW operation of a GaAs/AlGaAs vertical cavity surface-emitting laser with a resonant periodic gain medium, using a GaAs/AlGaAs diode laser array as a pump source, is discussed. Pumping thresholds as low as 11 mW at 730 nm, output powers as high as 10 mW at 856 nm, and external quantum efficiencies as high as 70% are obtained, with considerably improved temporal and spatial coherence properties compared to the pump laser. This is the first reported operation of such a laser with an efficient, compact pump source, demonstrating its suitability for efficient integration