共查询到20条相似文献，搜索用时 62 毫秒
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Ａｋ－ε－ＰＤＦＴｗｏ－ＰｈａｓｅＴｕｒｂｕｌｅｎｃｅＭｏｄｅｌｆｏｒＳｉｍｕｌａｔｉｎｇＳｕｄｄｅｎ－ＥｘｐａｎｓｉｏｎＰａｒｔｉｃｌｅ－ＬａｄｅｎＦｌｏｗｓＡｋ－ε－ＰＤＦＴｗｏ－ＰｈａｓｅＴｕｒｂｕｌｅｎｃｅＭｏｄｅｌｆｏｒＳｉｍｕｌａｔｉｎｇ... 相似文献
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介绍用于热压、烧结和气相沉积等工艺的ＺＲＹ－１０Ｏ－２０真空热压炉，详细阐述了热压炉炉体结构、加热器结构、真空系统以及工作原理。 相似文献
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Guanghua Gao 《热科学学报(英文版)》1994,3(3):177-182
Ｗａｔｅｒ－ＡｒｏｍａｔｉｃＬｉｑｕｉｄ－Ｌｉｑｕｉｄ－ＶａｐｏｕｒＥｑｕｉｌｉｂｒｉｕｍＣａｌｃｕｌａｔｉｏｎＵｓｉｎｇａＣｕｂｉｃＥｑｕａｔｉｏｎｏｆＳｔａｔｅＧｕａｎｇｈｕａＧａｏ（ＤｅｐａｒｔｍｅｎｔｏｆＣｈｅｍｉｃａｌＥｎｇｉｎｅｅｒｉｎｇ... 相似文献
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《Solar Energy Materials》1984,1(4):345-352
The temperature dependence of the electrical conductivity was investigated in chlorinated and hydrogenated amorphous silicon films (a-Si:H:Cl) deposited by glow discharge in the SiCl4SiH4 mixtures. The influence of chlorine on the different transport processes is determined according to the investigated temperature range. On the base of the experimental results and the speculative considerations regarding the film structure the inference is drawn that chlorination of hydrogenated amorphous silicon causes a decrease in the gap state density and an increase in the structural disorder. It is supposed that a more definite improvement of the electronical properties of glow discharge amorphous silicon could be expected for the relatively low chlorine concentration of about (1.0–2.0)×1021 at/cm3. 相似文献
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The objectives of the perfect power project include: 1) the achievement of system-wide perfect power and demonstration of its technological viability; 2) 50% peak demand reduction capability via on-site generation when called upon by ComEd/PJM; 3) deferral of ComEd planned substation upgrades due to the demand reduction achieved; 4) demonstration of the economic value of perfect power, specifically the avoidance of outage costs and the introduction of significant savings and revenue from providing ancillary services; and 5) a design that can be replicated to any municipality-sized system where customers can participate in electric power market opportunities. In addition, the IIT team seeks to fulfill the mission of the university as set forth by President John L. Anderson, "IIT will be internationally recognized in distinctive areas of education and research, using as its platform the global city of Chicago, driven by a focus on professional and technology oriented education, and based on a culture of innovation that embraces bold and transformational ideas." Transforming the IIT power delivery infrastructure to achieve perfect power is a bold idea that will require a never-ending series of innovations. We have embraced the vision of the GEI and we look forward to sharing our progress with the power and energy community in the years to come. 相似文献
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《Solar Energy Materials》1986,13(6):433-440
The dark and photoconductivities of microcrystalline Si films, deposited from SiCl4 by the cold rf plasma method, have been investigated as a function of total gas pressure and dopant concentration, and have been correlated to the chlorine contents of the films. It was found that deposition pressure affects the electrical conductivity, its activation energy and the type of the films deposited without dopant gases. The chlorine content of the film is dependent on the type and concentration of the dopant gas and is affecting mainly the photoconductivity. The electrical conductivity of the silicon films is strongly dependent on the dopant incorporated in them and can be changed by several orders of magnitude. 相似文献
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《Power and Energy Magazine, IEEE》2008,6(1):42-48
Power system "operating reliability" is at the core of responsibilities that have been entrusted by French law to the Reseau de Transport d'Electricite (RTE), in its capacity as France's transmission system operator (TSO). The Power System Reliability Audit Mission is responsible for two main complementary activities: 1) carrying out power system reliability audits and 2) drafting of a yearly power system reliability report. In this section we present the principles, on which the control of system reliability is based, the procedure for creating the yearly reliability report, the procedure for the elaboration of the reliability audit plan, and the procedures governing the reliability audits. 相似文献
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Profiled a-SiGe:H-buffer layers between the doped and the absorption layers of amorphous silicon germanium (a-SiGe:H) solar cells are routinely used to avoid bandgap discontinuities and high-defect densities at the p/i- and i/n interface. Here, we present a much simpler approach replacing the profiled a-SiGe:H-buffer layers at both interfaces by a-Si:H-buffer layers. It is demonstrated that for a-SiGe:H solar cells (thickness of the EG=1.5 eV part is 54 nm) these structures yield similar open circuit voltage VOC and fill factor (FF) compared to the bandgap profiled layer at the same short circuit current density jSC. The influence of thickness, optical bandgap and position of the buffer layers on the solar cell performance is investigated. 相似文献