Functional derivative ofT c with α2(ω)F(ω) for weak coupling anisotropic superconductors

Approximate analytic calculations of the functional derivative ofT _c with respect to ²()F() for anisotropic superconductors are presented, with the primary purpose of identifying the determining material parameters. The square-well model for the phonon-mediated electron-electron interaction, the weak coupling limit ( _c /2T _c 1), and separable anisotropy are used. The general behavior of T _c /²()F() is the same as that found in numerical calculations for the case of small anisotropy, a ²/(–*)1; the regime of * is also discussed.     

o′-β′ sialon ceramics

Powders of Si₃N₄, Al₂O₃ and SiO₂ were mixed with Y₂O₃ as sintering aid and hot-pressed to form o- sialon. During sintering, the o phase preferentially precipitated in the temperature region of 1550 to 1600 °C, and the phase precipitated at temperatures of 1700 °C and above. The resultant microstructure consisted of dual phases of o and . The mechanical properties of o- sialon were improved with increasing amount of the phase. When SiO₂ required for the formation of the o phase was all included in the grain boundary phase, o- sialon exhibited a three-point bending strength as much as 1400 MPa. The oxidation resistance of o- sialon is expected to improve due to the presence of the o phase, but actually was not so good due to the presence of the grain-boundary glassy phase and impurities.     

AC electrical conductivity of electron beam evaporated Cu-GeO2 thin cermet films

AC electrical properties of 410 nm think 30 at.wt% Cu-70 at.wt% GeO₂ thin films are reported for the frequency range 10⁴ to 10⁶ Hz and temperature range 150 to 425 K. The loss tangent (tan ) and the dielectric loss (/₀) are found to show striking minima around a cut-off frequency 10⁵ Hz. In the lower frequency range (10⁵ Hz), ₁() ^s T ⁿ is obeyed with s (0 to 0.51) increasing as a function of temperature and n (0.10 to 0.14) showing a very weak temperature dependence. In the higher frequency region (10⁵ Hz), ₁() and /₀ increase sharply leading to the quadratic behavior of ₁() with s equal to 2. These processes are discussed by analyzing an equivalent circuit which shows that at lower frequencies, the effects of series resistance in leads and contacts can be neglected, while at higher frequencies such effect give rise to spurious ² dependance for the conductance. A weakly activated AC conductivity and a frequency exponent s that increases with increasing temperature suggest that the low frequency behavior originates from carrier migration by tunneling process.     

Phase relationships in Si3N4-AIN-MxOy systems and their implications for sialon fabrication

Phase relationships in Si₃N₄-AIN-M_xO_y systems involving -sialon, where M represents lithium, magnesium, calcium, yttrium, neodymium, samarium, gadolinium, dysprosium, erbium and ytterbium are outlined. Their implications for the formation and fabrication of single-phase -sialon and two-phase : sialon ceramics are discussed.     

A nonlinear composite shell element with continuous interlaminar shear stresses

A numerical model for layered composite structures based on a geometrical nonlinear shell theory is presented. The kinematic is based on a multi-director theory, thus the in-plane displacements of each layer are described by independent director vectors. Using the isoparametric apporach a finite element formulation for quadrilaterals is developed. Continuity of the interlaminar shear stresses is obtained within the nonlinear solution process. Several examples are presented to illustrate the performance of the developed numerical model.List of symbols reference surface - convected coordinates of the shell middle surface - ⁱ coordinate in thickness direction - ⁱ h thickness of layer i - X_o position vector of the reference surface - ⁱX_o position vector of midsurface of layer i - t _k orthonormal basis system in the reference configuration - ⁱ a _k orthonormal basis system of layer i - ⁱW axial vector - R_o orthonormal tensor in the reference configuration - ⁱ R orthonormal tensor of layer i - ⁱ Cauchy stress tensor - ⁱ P First Piola-Kirchhoff stress tensor - ⁱ q vector of interlaminar stresses - ⁱ n, ⁱ m vector of stress resultants and stress couple resultants - v _x components of the normal vector of boundary - ⁱ N, ⁱ Q, ⁱ M stress resultants and stress couple resultants of First Piola-Kirchhoff tensor - stress resultants and stress couple resultants of Second Piola-Kirchhoff tensor - ⁱ , ⁱ , ⁱ strains of layer i - _K transformation matrix - u_o displacement vector of layer 1 - ⁱ local rotational degrees of freedom of layer i     

An exact calculation of Price's law for the law of Lotka

Price's law asserts — in its simpliest version — that authors produce half of the papers made by the total ofN authors. More generally: the topN (0<<1) authors produce a fraction (0<<1) of the papers made by the total ofN authors and the Price's law says that . In this paper — using Lotka's law — we prove a mathematical relationship of in function of and the parameter (the mean number of papers per author) and investigate when . More-over our reasoning uses the theory of the 80/20 rule as developed in: L. EGGHE, On the 80/20-rule,Scientometrics, 10 (1986) 55–68, thereby also showing the relation betwwen the 80/20-rules (being an arithmetical form of measuring elitarism) and Price's law (being a geometric form of measuring elitarism).     

Coupling of order parameter collective modes to spin density in3He-B

We derive a general expression for the dynamic spin susceptibility of³He-B which is valid for all magnetic fields. The coupling of real and imaginary modes by particle-hole asymmetry is taken into account. Then we calculate the contribution of the mode at frequency =2 – 1/4 ( is the effective Larmor frequency) to the transverse susceptibility. The spectral weight of this mode in magnetic resonance absorption is proportional to (/)^1/2 (–)², where and are particle-hole asymmetry parameters. From the experimental coupling strength of the real squashing mode to sound we estimate (–)²10^–4. The dynamic susceptibility satisfies the sum rules of Leggett. Finally we point out the difficulties in calculating the transverse NMR frequency of³He-B. These difficulties arise from theS _z =0 Cooper pairs and from the coupling ofJ _z =±1 modes forJ=1 andJ=2.     

Sound propagation in 3He-4He mixtures near the superfluid transition

Measurements of the acoustic attenuation and dispersion in liquid ³He-⁴He mixtures near the superfluid transition T (x) are reported. The frequency range is /2gp=1–45 MHz and the ³He mole fraction X of the mixtures is 0.007, 0.05, 0.15, and 0.36. Comparisons are made with the measurements of Buchal and Pobell for similar mixtures obtained in the kHz region, and on the whole, the consistency between the two experiments is very satisfactory. An analysis is then performed using both the kHz and MHz data. In the normal phase, where the energy dissipation is caused by order parameter fluctuations having a lifetime _F , the attenuation data can all be scaled according to the expression = (T )f(_F. Here (T )^1+y, with y being a function of the mole fraction X and _F(T–T )^–x, with x increasing weakly with X. In the superfluid phase, we attempt a similar scaling representation, which is found to be fairly successful, but where x(T\s-T ) is roughly 15% larger than x(T>T ). In the superfluid phase we also analyze the attenuation data, assuming the additivity of relaxation and fluctuation-dissipation mechanism, and discuss the relaxation times so derived. In contrast to the attenuation, the dispersion data cannot be brought satisfactorily into a scaling representation. However, at T , we find U()-U(0)^y as predicted by Kawasaki, where y is in good agreement with the values from attenuation experiments.Supported by a grant from the National Science Foundation.     

Lamellar thickening growth of an extended chain single crystal of polyethylene (II) : ΔT dependence of lamellar thickening growth rate and comparison with lamellar thickening

The degree of supercooling (T ⁰) dependence of lamellar thickening growth rate (U) of an isolated extended chain single crystal (ECSC) of polyethylene is studied. The experimental formula,U = C exp(–D/T ⁰), where C = 130 nm/s and D = 20.0 K is obtained for the first time. The formula is the same as that of lateral growth rate (V). The reason why U and V obey the same formula is well explained by a model named sliding diffusion model of the lamellar thickening growth. The model proposed that the lamellar thickening growth is controlled by both chain sliding diffusion within the ECSC and the nucleation on the side surface. The observed fact that the U increases with increase of T ⁰ is opposite to the well known fact that lamellar thickening rate W decreases with increase of T ⁰. This siginificant difference was well explained by the difference between the primary crystallization and the secondary crystallization, which is a kind of Ostwald's ripening process. The origin of the tapered shape is well explained by coupling of lamellar thickening and lateral growths.     

The optical properties and a.c. conductivity of magnesium phosphate glasses

Magnesium phosphate [X MgO-(100–X) P₂O₅] glasses in the composition range [X=20, 25, 30, 40, 45, 50 mol %] have been made. The optical properties and a.c. conductivities were measured and their amorphous nature confirmed by X-ray diffraction technique. The variation of relative density with x was anomalous. In the ultraviolet/visible regions it was found that the fundamental absorption edge is a function of glass compositions and lower absorption coefficients, () follow the so-called Urbach edge. At lower absorption levels (1<<10⁴cm^–1), the width of the tail of localized states in the band gap, E _g, did not vary significantly with glass composition and lay in the range (0.26–0.343) eV. In the high absorption region (()>10⁴ cm^–1), the behaviour of () suggests that there are two different transition energies for electrons in k-space, namely direct allowed transitions and non-direct transitions. In the infrared region at wavelengths =2.5–30 m, the transmission spectrum has four absorption bands. Using the Kramers-Kronig theory, the optical constants (refractive index n and extinction coefficient k) have been determined from the transmission spectrum. The a.c. conductivity, (), real and imaginary dielectric constants, ₁, ₂, and loss factor, tan , have been determined at room temperature in the frequency region, = 2×10⁴–10⁶ Hz. It has previously been established theoretically that () ^s and s was found to be in the range 0.64–0.73, depending on glass composition.     

Specific heat near the lambda point in 4He and 3He-4He mixtures: Test of universality of the critical exponent and the amplitude ratio,and observation of the critical-tricritical crossover effect

The specific heat under saturated vapor pressure of pure ⁴He and of six ³He-⁴He mixtures up to X = 0.545 was measured in the temperature range 3 × 10^–6 <¦T-T ¦ <10^–2 K. The critical exponents and along the path = are independent of X up to X = 0.545, where (= ₃ – ₄) is the difference between chemical potentials. If we take account of higher order terms, the exponent (= ) and the amplitude ratio A /A are independent of X up to X = 0.545. The values of and A /A are –0.023 and 1.090, respectively. The critical-tricritical crossover effect was observed for X = 0.545 and the boundary of crossover region closest to the critical region was at /T = (1–2) × 10^–4, where is the distance ¦T – T ¦ along the path = . This value is in good agreement with the estimated value by Riedel et al. But, remarkably, in the case of X = 0.439 this effect was not observed.     

Dielectric properties of chemically vapour-deposited Si3N4

The dielectric properties of chemically vapour-deposited (CVD) amorphous and crystalline Si₃N₄ were measured in the temperature range from room temperature to 800° C. The a.c. conductivity ( _a.c.) of the amorphous CVD-Si₃N₄ was found to be less than that of the crystalline CVD-Si₃N₄ below 500° C, but became greater than that of the crystalline CVD-Si₃N₄ over 500° C due to the contribution of d.c. conductivity ( _d.c.). The measured loss factor () and dielectric constant () of the amorphous CVD-Si₃N₄ are smaller than those of the crystalline CVD-Si₃N₄ in all of the temperature and frequency ranges examined. The relationships of ^n-1, (- ) ^n-1 and/(- ) = cot (n/2) (were observed for the amorphous and crystalline specimens, where is angular frequency andn is a constant. The values ofn of amorphous and crystalline CVD-Si₃N₄ were 0.8 to 0.9 and 0.6 to 0.8, respectively. These results may indicate that the a.c. conduction observed for both of the above specimens is caused by hopping carriers. The values of loss tangent (tan) increased with increasing temperature. The relationship of log (tan) T was observed. The value of tan for the amorphous CVD-Si₃N₄ was smaller than that of the crystalline CVD-Si₃N₄.     

Dielectric Properties of Pb(Ti,Zr)O3–∑n=14 (PbB"1-αB""αO3)nSolid Solutions

Dielectric permittivity measurements in Pb(Ti,Zr)O₃–_n=1 ⁴ (PbB^" _{1 -} B^" O₃) _n solid-solution systems demonstrate that the permittivity ^T ₃₃/₀of the solid solutions correlates with the molar ratio of the more soft-electric to the less soft-electric component of PbB^" _{1 -} B^" O₃(). With increasing , ^T ₃₃/₀rises because of the decrease in the uniform cell distortion parameter. The permittivity is also sensitive to structural disordering at > 1 and reduction in the density of the materials at 1.     

Activated slip systems during yielding of α-β brass two-phase bicrystals

- brass two-phase bicrystals, consisting of fcc () single crystals and bee () single crystals, which were made by the solid state diffusion couple technique, were tensile-tested at room temperature in order to clarify the role of phase-interface on the deformation. The two-phase bicrystals had small concentration gradients in the- and-phases and satisfied the Kurjumov-Sach's orientation relationships i.e. {1 1 1} {1 1 0} and [1 1 0] [1 1 1] at the interface. The slip traces observed in bicrystals deformed to about 3% plastic strain showed a striking contrast between the- and-phases; the slip traces in the-phase were clear and straight, while those in the-phase were fine and wavy. The slip systems in the bicrystals were attributed to those observed in and single crystals, and were explained by a plastic strain incompatibility mechanism. The slip systems, originating at the interface or propagating from another phase, were observed on matching planes.On leave from Mechanical Engineering Department, Faculty of Engineering, Al-Azhar University, Cairo, Egypt.     

Effects of Bonding Configuration and Structural Perfection on the Properties of Doped NaNbO -Based Solid Solutions

The effects of bonding configuration (electronegativity) and doping-produced vacancies on the properties of doped NaNbO₃-based solid solutions were studied. The results demonstrate that there is an average electronegativity of the elements involved above which the uniform distortion parameter increases and the relative dielectric permittivity ^T ₃₃/₀decreases with increasing electronegativity, as is common in other solid-solution systems. Below this value, both and ^T ₃₃/₀vary in the opposite way. An explanation for the anomalous behavior of is proposed.     

Biaxial dielectric properties of phenyl ester ferroelectric liquid crystal mixture

Dielectric and electro-optic properties of phenyl ester FLC mixture have been studied in detail. Dielectric relatation spectroscopy was used to study the molecular dynamics and dipolar ordering. In the SmA^* phase, this is accompanied by a sharp increase in the dielectric strength _s on approaching T _c. At such high frequency (2 MHz) is usually negative in the SmC^* and SmA^* phase. In the N^* phase, at lower frequencies, had a weakly positive value. In the SmC^* phase, is positive and its maximum value is less than 0.1. The dielectric biaxiality is discussed as an order parameter of the tilted smectic phase. It is verified that if the tilt angle increases according to (T _C – T), the biaxiality increases according to (T _C – T)². A critical exponent for and are 0.27 and 0.54, respectively. The rotational viscosity for soft mode is of 10 Nsec/m² in the SmA^* phase. The activation energy for the rotational dynamics of Goldstone mode is estimated to be 1.4 eV from an Arrhenius plot. Optical response time is of about 50 s at room temperature in SmC^* phase, and is on the order of 10 s in the N^* phase and almost independent of the applied field.     

The athermal α → ω transformation in Zr-2 at% Nb alloy

The athermal transformation in Zr-2 at.% Nb alloy has been investigated by transmission electron microscopy. Analysis of the selected-area diffraction pattern has shown that the orientation relationships between the omega and the parent-phase in quenched Zr-2 at.% Nb alloy are the same as have been previously observed for the reaction in pure zirconium. Thus it was deduced that the direct transition has taken place in the alloy during cooling. The-originated -particles were visualized using the dark-field technique. The formation of the athermal omega in the-region of-stabilized Zr-Nb alloy is discussed in terms of the relative positions of the free energy equilibrium curvesT ₀ ,T ₀ ,T ₀ and the correspondingM _s ,M _s andT _s start curves. It is concluded that the omega phase can occur over a much wider range of alloy compositions than is usually recognized on the basis of transformation data.     

Nucleation and growth of β′magnesium sialons and their composition limits

Previous reports on the solubility of magnesium in -sialons have been conflicting. The present work shows conclusively that crystalline magnesium sialons with the silicon nitride structure do exist. They are formed by crystallization of magnesium sialon glasses at low temperatures. -magnesium sialon crystals nucleate on -sialon nuclei which are themselves formed by precipitation from Mg-Si-Al-O-N liquids at high temperatures. The current results suggest that -magnesium sialons exist only over a limited composition range within the 3M/4X plane of the Mg-Si-Al-O-N system, which is indicative of some form of ordering within the structure. Although the compositions investigated in the present study are unstable with respect to forsterite above about 1000° C, the possibility of producing -magnesium sialons which are stable at much higher temperatures cannot be fully discounted at present.     

Effects of Orthorhombic Distortion on Magnetic Excitation in t-J Model

Neutron scattering experiments on La_2–x Sr _x CuO₄ (LSCO) have revealed the incommensurate antiferromagnetic peaks do not lie exactly on the symmetry axes (q _x=± and q _y=±), but, are slightly shifted from them. In this paper, a scenario is presented for such shift in terms of the anisotropy of t (next-nearest-neighbor hopping integral on the square lattice) in the slave-boson scheme of the two-dimensional t-J model. Since the predictions of the present theory are different from those based on the spin-charge stripes hypothesis, further studies of the shift may clarify the factor responsible for the incommensurate antifcrromagnetic fluctuations in LSCO systems.     

Temperature field in a plate containing a system of heat sources

The temperature field is determined in a circular plate with a system of thin extrinsic heat sources.Notation T temperature in the plate with the inclusions - r polar radius - polar angle - time - (r,) coefficient of thermal conductivity - (r,) heat transfer coefficient - C(r,) volume heat capacity - W(r,, ) specific intensity of the heat sources - half thickness of the plate - (x) Dirac's delta function - ¯T finite Fourier cosine transform of the temperature - p parameter for this transformation - T Laplace transform of the temperature - s its parameter - Iv(x) Bessel function with imaginary argument of order - K _v (x) the MacDonald function of order - and dimensionless temperature - Po Pomerantz number - Bi Biot number - Fo Fourier's number - dimensionless polar radius - b₁ ^* dimensionless radius of the circle on which the inclusions are placed - R^* dimensionless radius of the plate Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 40, No. 3, pp. 495–502, March, 1981.