L-波段俘越二极管及振荡器研究

本文报导L-波段俘越二极管及振荡器的设计思想、制造方法及实验结果。     

串联俘越二极管的实验研究

用两个和三个费尔查尔德的FD-300二极管串联,以俘越模式工作在大约500兆赫时,其结果如表Ⅰ所示。一般串联二极管在高电流下比单个二极管性能好。表I中二极管1和6串联,在1.8安时的性能比按比例换算所预计的要好,效率约提高一倍,功率约增加6倍。9,11和把串联,功率比单管功率之和大50肠厂效率稍许     

在设计S波段大功率俘越二极管放大器方面的一些进展

自从1967年在RCA实验室发现硅雪崩二极管的俘越(TRAPATT)工作模式以来,在器件的研制和实用方面取得了重大的进展。而且,最近进行的大量工作是想从俘越二极管放大器在较高的频率、较高的效率情况下获得更高的输出功率。随着俘越二极管的迅速发展,加之它对核辐射不灵敏,这样,俘越二极管就成为许多雷达系统的固体源的主要竞争者之一。虽然俘越二极管适合于脉冲模式工作,但是直到目前为止,脉冲宽度仍被限制在0.5     

X波段微带俘越放大器

美国无线电公司实验室研制了X波段微带俘越放大器,利用二次谐波萃取技术,能产生脉冲功率10～20瓦,效率大于10％,带宽为几百兆赫。最好的结果列于下表。器件直径为0.005～0.010(口寸),采用台面结构和集成热沉。二次谐波功率萃取放大器的电路由两部份构成,一部份是俘越空间电路,另一部份是输入匹配变换。     

L波段和S波段脉冲雷达的功率模块新产品

Microsemi公司PPG集团针对脉冲雷达应用推出了系列化的L波段和S波段功率模块（PSM）。这些功率模块可输出2～3倍于当今市场上单个晶体功率管所能输出的功率，其设计采用了易于使用的即插即用概念，用户能够直接将其植入系统而不需进行更多的阻抗匹配设计。更高的输出功率和更高的效率，加上即插即用的特点能够极大地简化用户系统设计的复杂性，缩短设计周期，功放部分的尺寸可缩小50％以上，并且极大地提高用户产品的开机合格率。     

崩越二极管模拟分析及实验

应用自编的崩越二极管模拟程序,进行了器件的计算机模拟.给出硅8毫米双漂移崩越管的模拟结果及其分析.并给出经计算机优化器件设计的实验结果.     

俘越振荡器的计算机辅助设计

本文给出了一个俘越(TRAPATT)振荡器计算机辅助设计方法.由实验出发得到一组电路参数的初始值,然后用逐点(频率)逼近法,使一组六元非线性方程组得到收敛解,从而,可以在给定频率下,从器件的低频参数得出TRAPATT振荡器的微波电路参数.本程序包括用快速富里埃变换(FFT)求给定电压激励下的电流波形;由器件低频参数出发求TRAPATT振荡器之器件阻抗、输出功率、温度特性;求已知电路阻抗等几个在类似微波电路中都可利用的子程序.     

基于准垂直结构GaN肖特基二极管的S波段限幅器研究

当今高功率微波技术发展迅速,电子设备所面临的威胁巨大。GaN肖特基二极管具有较小的开启电压和较高的击穿电压,特别适用于大功率整流电路。文章介绍了一种基于准垂直结构GaN肖特基二极管整流的高功率微波限幅器。测试结果表明,该限幅器在2～4 GHz频带内,可承受脉宽10μs、占空比1%、峰值超过1000 W的功率;其小信号插损小于1 dB,输入输出驻波比小于1.5。该限幅器插损小、耐功率高,可广泛应用于接收机中以提升其可靠性。     

一种基于二极管的L波段行波管预失真电路

该文分析了行波管放大器的输入输出曲线,并计算得到理想预失真线性化电路的增益和相位响应曲线。提出一种由两条非线性支路组成的预失真电路,并讨论了电路中肖特基二极管主要参数对预失真曲线的影响。设计制作了L波段预失真电路,并与行波管放大器联合测试,实验结果表明,加入预失真电路后,行波管放大器三阶交调载波比IM3在输入功率回退3 dB、6 dB、9 dB时分别从-10.3 dBc、-14.3 dBc、-18 dBc改善到-12.1 dBc、-18.5 dBc、-26.9 dBc。     

具有L波段单脉冲跟踪能力的L/S双波段共用波纹喇叭天线

单脉冲跟踪以其精度高、速度快等优点而被广泛应用于跟踪中、低轨卫星通信天线中.本文工作研究单槽深波纹喇叭的差模临界截止点和电压波腹点,通过提取波纹槽差模信号,设计了具备L频段单脉冲跟踪能力的L/S双频共用喇叭天线.实际测试结果表明,在L/S频段该喇叭具有良好阻抗匹配特性和辐射方向图旋转对称特性,且L频段差模信号实现了单脉冲跟踪能力,该喇叭天线电气性能满足工程应用要求.     

Experimental investigation of TRAPATT diode trigger conditions

Experimental studies have been carried out to determine the mechanisms by which the TRAPATT mode can be triggered into operation in the S-band frequency range. These investigations indicate that the TRAPATT mode can be triggered either by VHF oscillations or by IMPATT oscillations. The various frequencies interact to control the turn-on time and the current required to trigger the diode into oscillation. The interactions between the frequencies is controlled by the microwave and bias circuits. Changing the bias circuit alters the interaction thus causing the turn-on time and trigger current to be different. From this information the necessary bias conditions can be given to reduce the turn-on time and trigger current. With appropriate circuit elements the VHF have been observed to trigger the TRAPATT mode into operation in 5 ns. The IMPATT mode of triggering, however, results in a 20 to 25 ns delay before the TRAPATT signal appears.     

Active IMPATT Diode Parameters Obtained by Computer Reduction of Experimental Data

This paper describes a method of determining the junction parameters of an IMPATT device from basic microwave measurements through the use of a computer program. The technique, which evaluates the parasitic without the use of substituted impedances, and the computer program are described. Typical small and large signal results obtained on Ge and Si IMPATT devices are presented.     

TVS二极管性能优化指南

瞬态电压抑制器（TVS）二极管是一种保护敏感电子器件免受ESD和EMI浪涌脉冲的有效低成本选择。本文将提供TVS二极管浪涌最大抑制的PCB布局指南。同时将举例说明在不同电路配置中如何取舍TVS二极管。     

High-Efficiency High-Power TRAPATT Operation of a Single "Poor Man's" Diode (Correspondence)

The operation of a single Fairchild FD-300 diode at approximately 40-percent efficiency is reported. Peak power output was 90 W at 502 MHz. These diodes are of particular interest because they are exceptionally inexpensive commercially available diodes which have been found to exhibit TRAPATT behavior.     

激光二极管抽运Tm:YAP晶体实验研究

简要阐述2 μm激光光源的广泛应用需求,分析掺铥铝酸钇(Tm:YAP)晶体的能级结构和吸收光谱特性,报道了采用激光二极管(LD)端面抽运Tm:YAP晶体的方式,实现室温下2 μm激光的高效输出。在激光二极管输出功率为19 W时, 2 μm连续激光输出功率为6.5 W,光光转换效率达34％,斜率效率为47.5％。经过声光(AO)Q开关进行调制后,在重复频率10 kHz下,获得5.4 W的动态激光输出,激光单脉冲宽度为70 ns,激光二极管输出功率到2 μm激光动态输出功率的转换效率为28％,斜率效率为42％。通过实验验证了激光二极管端面抽运Tm:YAP晶体在室温下高效输出的特性。     

Experimental evidence of broad-band negative resistance characteristics of TRAPATT devices

Experiments on-deeply diffused Si TRAPATT diodes have given direct evidence of small-signal negative resistance at both VHF (30-80 MHz) and at the design TRAPATT frequency of 2 GHz.     

A simplified model of a TRAPATT diode

A simplified computer model of a TRAPATT (trapped plasma avalanche triggered transit) diode was developed and is used to investigate realistic voltage-current waveforms (i.e., waveforms that produce negative conductances at all signal frequencies). Oscillator efficiency variations due to fundamental and second-harmonic current tuning were studied. The computed waveforms show good agreement with the TRAPATT waveforms obtained experimentally.     

Experimental Study of Series Connected TRAPATT Diodes (Short Papers)

The results of experiments using TRAPATT diodes connected in series at 0.5, 2, and 8 GHz are described. These experiments demonstrate that successful series operation of TRAPATT's at frequencies up to at least 2 GHz can be achieved in a configuration suitable for long pulsewidth or CW operation. An 8-GHz operation of series stacked TRAPATT'S yielded high power outputs at the same efficiency achieved with single devices but no well heat sunk configuration was found that yielded good efficiency.     

计算非晶硅肖特基二极管电学参数的新方法

<正> 一、 引言 非晶硅(α-Si)肖特基二极管是最基本的太阳能电池,但要从理论上计算其电学参数是比较困难的,因为必须知道材料能隙中的定域态密度分布g(E)。1972年以来虽已发展了多种技术(FE,SCLC,DLTS等)来测定g(E),但是没有一种方法是完善的,而且在分布形式和数值上的差别都显得很大,这给器件分析带来了困难。因而人们以传统的利用模型来研究隙态密度,对g(E)引入了各种各样的数学模型。但目前尚无足够的证据说明何种模型是正确的,所以在α-Si器件分析中只能靠直觉来选择模型,而且往往有所困惑。 本文提出了计算α-Si肖特基二极管电学参数的一种新方法,可以在不知道g(E)的具体分布形式下,计算出其电学参数,而且也不涉及选择模型的问题。     

Optimal Parameters of Photonic-Crystal Vertical-Cavity Surface-Emitting Diode Lasers

We investigate the modal characteristics of a 1300-nm InP-based photonic-crystal (PC) vertical-cavity surface- emitting diode laser. To this aim, we apply the plane-wave admittance method and analyze a broad range of PC parameters such as hole etching depth, distance between the holes, and their diameters. We determine a range of technologically feasible PC parameters providing an optimal laser performance.