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1.
The role of substrate temperature and substrate surface geometry in determining the crystal structure and crystallinity of 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN-PT) thin films grown on r-plane sapphire substrates is examined. A 30-nm-thick amorphous PMN-PT seed layer deposited at 250°C and subjected to rapid thermal annealing at 850°C results in the formation of an epitaxial (110) perovskite PMN-PT growth template that can be used for subsequent growth of single-crystal (110) perovskite PMN-PT films at elevated temperature. The data show that single-crystal perovskite is promoted when the films nucleate with the \( \langle \overline{1} 11 \rangle \) PMN-PT direction parallel to the \( \langle 0\bar{2}21 \rangle \) Al2O3 direction. 相似文献
2.
E. Fuentes-Fernandez W. Debray-Mechtaly M. A. Quevedo-Lopez B. Gnade A. Rajasekaran A. Hande P. Shah H. N. Alshareef 《Journal of Electronic Materials》2011,40(1):85-91
0.9Pb(Zr0.53,Ti0.47)O3-0.1Pb(Zn1/3,Nb2/3)O3 (PZT–PZN) thin films and integrated cantilevers have been fabricated. The PZT–PZN films were deposited on SiO2/Si or SiO2/Si3N4/SiO2/poly-Si/Si membranes capped with a sol–gel-derived ZrO2 buffer layer. It is found that the membrane layer stack, lead content, existence of a template layer of PbTiO3 (PT), and ramp rate during film crystallization are critical for obtaining large-grained, single-phase PZT–PZN films on the
ZrO2 surface. By controlling these parameters, the electrical properties of the PZT–PZN films, their microstructure, and phase
purity were significantly improved. PZT–PZN films with a dielectric constant of 700 to 920 were obtained, depending on the
underlying stack structure. 相似文献
3.
Chunya Wu Zhiguo Meng Shuyun Zhao Shaozhen Xiong Man Wong Hoi Sing Kwok 《Journal of Electronic Materials》2007,36(9):1160-1165
By using an aqueous solution of Ni(NO3)2/NH4OH for formation of Ni media on a-Si, disk-like super-large domain metal-induced radially crystallized (S-MIRC) poly-Si was
prepared. The process requires no buffer layer deposition on a-Si. The prepared S-MIRC poly-Si has an average domain size
of up to 60 μm, highest hole Hall mobility of 27.1 cm2 V−1 s−1, and highest electron Hall mobility of 45.6 cm2 V−1 s−1. Poly-Si TFT made on super-large-domain S-MIRC poly-Si had high mobility of ~105.8 cm2 V−1 s−1, steep sub-threshold slope of ~1.0 V decade−1, high on/off state current ratio of >107 and low threshold voltage of ~ −6.9 V. A simultaneous Ni-collected and induced crystallization model is proposed to explain
the growth kinetics of S-MIRC poly-Si. 相似文献
4.
Wein-Duo Yang Yen-Hwei Chang Chia-Chia Huang Yu-Chung Chen 《Journal of Electronic Materials》2009,38(3):460-467
Highly sensitive CO gas sensors based on heterocontacts of ZnO:Al on La0.8Sr0.2Co0.5Ni0.5O3 (LSCNO) were fabricated successfully. La0.8Sr0.2Co0.5Ni0.5O3 thin films were coated on (100) silicon wafers by a sol-gel method including the Pechini process followed by a spin-coating
procedure. Then, ZnO:Al films prepared by radiofrequency (RF) magnetron sputtering at various oxygen partial pressures and
deposited on as-deposited La0.8Sr0.2Co0.5Ni0.5O3 films were investigated. The results revealed that the CO sensing ability of the film prepared with the ratio of O2/Ar = 5/5 (ratio of volume flow rate) was the worst, owing to the highest (002) plane orientation in the ZnO:Al film. In contrast,
the ZnO:Al film prepared with O2/Ar = 3/7 exhibited better CO sensitivity. Furthermore, all two-layer samples showed higher CO sensitivities than single-layer
samples. The CO sensitivity of ZnO:Al/La0.8Sr0.2Co0.5Ni0.5O3 thin film was 45% for 500 ppm CO at a sensing temperature of 200°C. 相似文献
5.
We present evidence that it is the presence or absence of atomic terraces with a specific crystallographic orientation on
the (102) Al2O3 surface that promotes growth of single-crystal (001) CeO2 films over polycrystalline (111) CeO2 films. The CeO2 film nucleates so that the [010] and [100] directions of the film align parallel and perpendicular to the terrace edges.
In the absence of terraces, multidomain (111) CeO2 films result in which the in-plane orientation of the two domains are rotated by 85.71°, so that a [110] CeO2 direction aligns parallel to either the or Al2O3 direction. 相似文献
6.
Naoyuki Takahashi Naoki Yoshii Shinichi Nonobe Takato Nakamura Masayuki Yoshioka 《Journal of Electronic Materials》2003,32(10):1107-1110
The ZrO2 films were deposited onto a Si(100) substrate using an alternate reaction of ZrCl4 and O2 under atmospheric pressure. It is found that the growth rate of ZrO2 film depends on the growth conditions, such as growth temperature, partial pressure of the sources being supplied, and exposure
time of the substrate to the gaseous sources. Self-limiting growth of the ZrO2 was achieved in the range of the growth temperature of 673–923 K. The x-ray diffractogram of the ZrO2 films showed a typical diffraction pattern assigned to the tetragonal polycrystalline phase. The obtained ZrO2 films were of smooth and uniform surface. It was found that the [O]/[Zr] ratio of the ZrO2 films are similar to that of the ZrO2 bulk. 相似文献
7.
Shih-Yuan Lin Ying-Chung Chen Chih-Ming Wang Kuo-Sheng Kao Chih-Yuan Chan 《Journal of Electronic Materials》2009,38(3):453-459
Calcium copper titanium oxide (CaCu3Ti4O12, abbreviated to CCTO) films were deposited on Pt/Ti/SiO2/Si substrates at room temperature (RT) by radiofrequency magnetron sputtering. As-deposited CCTO films were treated by rapid
thermal annealing (RTA) at various temperatures and in various atmospheres. X-ray diffraction patterns and scanning electron
microscope (SEM) images demonstrated that the crystalline structures and surface morphologies of CCTO thin films were sensitive
to the annealing temperature and ambient atmosphere. Polycrystalline CCTO films could be obtained when the annealing temperature
was 700°C in air, and the grain size increased signifi- cantly with annealing in O2. The 0.8-μm CCTO thin film that was deposited at RT for 2 h and then annealed at 700°C in O2 exhibited a high dielectric constant (ε′) of 410, a dielectric loss (tan δ) of 0.17 (at 10 kHz), and a leakage current density (J) of 1.28 × 10−5 A/cm2 (at 25 kV/cm). 相似文献
8.
Chun Wang 《Journal of Electronic Materials》2010,39(2):187-190
Epitaxial Nb-doped SrTiO3 (001) thin films have been integrated on Si(001) single-crystal substrates with a TiN template layer by radio-frequency (RF)
sputtering. The epitaxial growth of Nb-SrTiO3 was achieved in an Ar environment at a substrate temperature of 540°C. The orientation relationship was determined to be
simply cube-on-cube as Nb-SrTiO3 (001)[110]||TiN(001) [110]||Si(001)[110]. The deposited Nb-SrTiO3 films show a smooth and featureless surface with roughness below 1 nm. These smooth Nb-doped SrTiO3/TiN/Si films have a conductivity of 500 S/cm and could be promising electrodes for subsequent ferroelectric thin films. 相似文献
9.
Cheng-Hsing Hsu 《Journal of Electronic Materials》2011,40(10):2159-2165
Optical and dielectric properties and microstructures of ZnO-doped (Zr0.8Sn0.2)TiO4 thin films prepared by radiofrequency (rf)-magnetron sputtering on indium tin oxide/glass substrates at different rf powers
and substrate temperatures have been investigated. Selected-area diffraction patterns showed that the deposited films exhibited
a polycrystalline microstructure. All films exhibited the ZnO-doped (Zr0.8Sn0.2)TiO4 structure with the (111) orientation perpendicular to the substrate surface. The grain size as well as the deposition rate
of the film increased with an increase in both rf power and substrate temperature. At an annealing temperature of 700°C, the
ZnO-doped (Zr0.8Sn0.2)TiO4 film possessed a dielectric constant of 47 at 10 MHz, a dissipation factor of 0.02 at 10 MHz, a leakage current density of
7.35 × 10−9 A/cm2 at an electrical field of 1 kV/cm, average transmission in the visible range of over 70%, and an optical bandgap of 3.6 eV.
This film will allow fabrication of fully transparent semiconductor devices such as a resistive random-access memory (RRAM)
and thin-film transistors (TFTs) completely based on ZnO-doped (Zr0.8Sn0.2)TiO4 thin films. 相似文献
10.
硅基硫化锌薄膜的溅射法生长技术 总被引:3,自引:1,他引:2
利用射频磁控溅法在Si衬底上制备ZnS薄膜,用X射线衍射技术对薄膜的结构相变进行研究,揭示了Si衬底上ZnS薄膜的微观结构和相变特征与溅射功率的关系,为寻找高新发光材料提供依据。 相似文献
11.
Two 10-mm-long multilayer prototype actuators were fabricated by a stack method using 55 pieces of 5 mm×5 mm×0.15 mm Pb(Mg1/3Nb2/3)O3-xPbTiO3 (PMNT) single crystals and PZT-5A ceramics, respectively. The strain values for PMNT multilayer piezoelectric actuators are
twice those of PZT-5A multilayer actuators, and 20.8-μm displacements can be achieved at the same E-field of 15 kV/cm. Although
thermal and electrical history markedly impact dielectric and piezoelectric performance of PMNT crystals, the PMNT multilayer
actuator can still achieve large displacements with approximately linear behavior below 60°C. Broad stable dynamic displacement
characteristic and fast displacement response make the new-type actuators promising candidates for the application in new-generation
high-performance solid-state actuators. 相似文献
12.
H. Zhang Y.J. Su L.J. Qiao W.Y. Chu D. Wang Y.X. Li 《Journal of Electronic Materials》2008,37(3):368-372
The effect of hydrogen on the fracture properties of lead-free ferroelectric ceramics has been studied. For hydrogen precharged
samples, the fracture toughness decreased linearly with both increasing hydrogen concentration and the logarithm of dwell
time of indenting. Hydrogen-induced delayed propagation of unloaded indentation cracks can occur, and the threshold stress
intensity factor of hydrogen-induced cracking induced by residual stress decreases linearly with increasing hydrogen concentration. 相似文献
13.
The effects of Ar+ radiofrequency (RF) plasma pretreatment conditions on the interfacial adhesion energy of a Cu/Cr/Al2O3 system were investigated for thin-film capacitors in embedded printed circuit board applications. The interfacial adhesion
energy was evaluated from 90 deg peel tests by calculating the plastic deformation energy of peeled metal films from the energy
balance relationship during the steady-state peeling process. The interfacial adhesion energy was fivefold higher after RF
plasma pretreatment of the surface of 50-nm-thick Al2O3 prepared by atomic layer deposition. Atomic force microscopy, Auger electron spectroscopy, and x-ray photoemission spectroscopy
results clearly reveal that this increase can be attributed to both mechanical interlocking and chemical bonding effects. 相似文献
14.
Ba6−3xNd8+2xTi18O54 with x=0.25 (BNT-0.25, or simply, BNT) dielectric thin films with a thickness of 320 nm have been prepared on Pt-coated silicon
substrates by pulsed laser deposition (PLD) at the substrate temperature of 650°C in 20 Pa oxygen ambient. X-ray analysis
showed that the as-deposited films are amorphous and the films remain amorphous after a postannealing at 750°C for 30 min.
The dielectric constant of the BNT films has been determined to be about 80 with a low loss tan δ of about 0.006 at 1 MHz.
The capacitance-voltage (C-V), capacitance-frequency, and capacitance-temperature characteristics of a BNT capacitor with
Pt top electrode were measured. A low leakage-current density of 4×10−6 A/cm2 at 6 V was measured, and a preliminary discussion of the leakage-current mechanism is also given. It is proposed that amorphous
BNT-0.25 thin films will be a potential dielectric material for microwave applications. 相似文献
15.
Sintered Bi0.5(Na0.8K0.2)0.5TiO3 + x wt.% ZnO nanoparticle (BNKT–xZnOn) ceramics have been fabricated by conventional annealing with the aid of ultrasound waves for preliminary milling. Because of the presence of the liquid Bi2O3–ZnO phase at the eutectic point of 738°C, the sintering temperature decreased from 1150°C to 1000°C, and the morphology phase boundary of BNKT–xZnOn ceramics can be clarified by two separated peaks at (002)T and (200)T of 2θ in the x-ray diffraction (XRD) patterns. The improvement of ferroelectric properties has been obtained for BNZT–0.2 wt.% ZnOn ceramics by the increase of remanent polarization up to 20.4 μC/cm2 and a decrease of electric coercive field down to 14.2 kV/cm. The piezoelectric parameters of the ceramic included a piezoelectric charge constant of d 31 = 78 pC/N; electromechanical coupling factors k p = 0.31 and k t = 0.34, larger than the values of 42 pC/N, 0.12 and 0.13, respectively, were obtained for the BNKT ceramics. 相似文献
16.
17.
Zong-Liang Tseng Lung-Chien Chen Jian-Fu Tang Meng-Fu Shih Sheng-Yuan Chu 《Journal of Electronic Materials》2017,46(3):1476-1480
Transparent conducting Nb-doped titanium oxide (NTO) films were deposited on a non-alkali glass substrate using an RF magnetron sputtering method with post-annealing. Structural, electrical and optical properties of the NTO films were found to be strongly dependent on film thickness. A resistivity of 4.2 × 10?3 Ω cm and an average visible transmittance of ~70% were obtained at the film thickness of 360 nm, indicating that the polycrystalline NTO fabricated by the sputtering method has sufficient potential as a transparent conducting oxide (TCO) candidate for practical applications. 相似文献
18.
This study reports the good thermal stability of a sputtered Cu(MoN
x
) seed layer on a barrierless Si substrate. A Cu film with a small amount of MoN
x
was deposited by reactive co-sputtering of Cu and Mo in an Ar/N2 gas mixture. After annealing at 560°C for 1 h, no copper silicide formation was observed at the interface of Cu and Si. Leakage
current and resistivity evaluations reveal the good thermal reliability of Cu with a dilute amount of MoN
x
at temperatures up to 560°C, suggesting its potential application in advanced barrierless metallization. The thermal performance
of Cu(MoN
x
) as a seed layer was evaluated when pure Cu is deposited on top. X-ray diffraction, focused ion beam microscopy, and transmission
electron microscopy results confirm the presence of an ∼10-nm-thick reaction layer formed at the seed layer/Si interface after
annealing at 630°C for 1 h. Although the exact composition and structure of this reaction layer could not be unambiguously
identified due to trace amounts of Mo and N, this reaction layer protects Cu from a detrimental reaction with Si. The Cu(MoN
x
) seed layer is thus considered to act as a diffusion buffer with stability up to 630°C for the barrierless Si scheme. An
electrical resistivity of 2.5 μΩ cm was obtained for the Cu/Cu(MoN
x
) scheme after annealing at 630°C. 相似文献
19.
采用射频磁控溅射法在Si和Pt/TiOx/SiO2/Si衬底上沉积了(Ba0.65Sr0.35)TiO3铁电薄膜,研究了BST铁电薄膜微观结构和介电性能。实验结果表明:衬底温度在550℃,工作气压为2.0 Pa的溅射条件下沉积的BST薄膜,经750℃退火处理30 min后,形成了完整的钙钛矿相;与Si衬底相比,在Pt衬底上制备的BST薄膜晶粒更均匀、表面平整无裂纹。在室温、频率为100 kHz条件下薄膜的介电常数ε=353.8,介电损耗tanδ=0.012 8。介电温谱结果表明制备的(Ba0.65Sr0.35)TiO3铁电薄膜居里温度在5.0℃左右。 相似文献
20.
J.S. Park J.H. Chang T. Minegishi H.J. Lee S.H. Park I.H. Im T. Hanada S.K. Hong M.W. Cho T. Yao 《Journal of Electronic Materials》2008,37(5):736-742
The polarity control of ZnO films grown on (0001) Al2O3 substrates by plasma-assisted molecular-beam epitaxy (P-MBE) was achieved by using a novel CrN buffer layer. Zn-polar ZnO
films were obtained by using a Zn-terminated CrN buffer layer, while O-polar ZnO films were achieved by using a Cr2O3 layer formed by O-plasma exposure of a CrN layer. The mechanism of polarity control was proposed. Optical and structural
quality of ZnO films was characterized by high-resolution X-ray diffraction and photoluminescence (PL) spectroscopy. Low-temperature
PL spectra of Zn-polar and O-polar samples show dominant bound exciton (I8) and strong free exciton emissions. Finally, one-dimensional periodic structures consisting of Zn-polar and O-polar ZnO films
were simultaneously grown on the same substrate. The periodic inversion of polarity was confirmed in terms of growth rate,
surface morphology, and piezo response microscopy (PRM) measurement. 相似文献