PVDF压电传感器在实验模态分析中的应用

提出通过聚偏氟乙烯(PVDF)压电传感器替代加速度计对振动结构进行实验模态分析。在固支梁表面分别布置矩形PVDF压电传感器和加速度计,测量外界激励与振动结构响应之间的频率响应函数,通过模态软件对数据进行分析,得到模态参数并将结果进行对比。实验结果表明,利用PVDF压电传感器对振动结构进行实验模态分析效果良好,且具有附加质量小,频响宽,操作简便等特点,与加速度计相比,具有明显的优越性。     

驻极体声传感器及其储电材料的现状

综述了驻极体声传感器及其储电材料近年来的迅猛发展。传统的FEP(tetrafluoroethylene—hexa—fluoropropylene copolymer)极体电容式声传感器及以铁电聚合物PVDF(poly vinylidene fluoride)家族为芯片的声传感器和超声抉能器仍焕发着青春活力。Si基微型驻极体声传感器的理论和实验研究已经日趋成熟，而用空间电荷型多孔聚合物驻极体压电薄膜为芯片可望研制出新一代声电和电声传感器、压力传感器和驱动器。     

利用ADM方法设计振动梁的体积位移传感器

提出了一种用来测量任意边界振动梁的体积位移传感器设计方法.利用压电材料聚偏氟乙烯(PVDF)良好的压电性能,通过基于Adomian分解(ADM)法,求出任意边界梁的结构模态形状2阶空间导数的闭环级数解,通过模态法设计出特殊形状的PVDF传感器,使PVDF输出信号为所需要的振动梁体积位移.结果表明,在有限频率范围内,基于ADM法设计任意边界条件振动梁结构的PVDF体积位移传感器是可行的.     

基于模态分析的散布式扬声器幅频特性研究

从薄板弯曲振动方程出发,论述了散布武平板扬声器薄板振动模态与声辐射模态和辐射声功率的内在关联。研究表明：振动模态简正频率密度和主导声辐射模态是影响辐射声功率的主要因素。试验证明,激励力所能激发的模态密度、模态阻尼对平板扬声器幅频特性有较大影响。     

基于PVDF压电传感器的采摘机械手研究

针对目前果实采摘机械手无法准确自主判断抓取力度的问题,利用聚偏氟乙烯(PVDF)的压电敏感特性,研究出一种基于PVDF压电薄膜传感器的果实采摘机械手。通过采集PVDF压电薄膜传感器输出信号判断果实采摘机械手对应抓取力的变化,利用模糊控制理论控制电机实现果实抓取。同时加入过力保护功能,当测得的抓取力大于预设值时,机械手停止抓取。实验结果表明,基于PVDF压电传感器的采摘机械手能够可靠地实现果实抓取。     

利用压电薄膜设计体积位移传感器

以不同边界条件的振动板为例,提出利用模态方法和分部积分方法设计PVDF传感器测量体积位移。模态正交性设计方法只能满足单一边界条件振动板结构体积位移的测量,而根据分部积分方法设计得到的PVDF传感器,适合一定边界范围的振动板的体积位移测量,并且所设计的PVDF传感器形状与激励力性质(类型、位置和频率范围)以及振动板本身的材料特性无关。     

利用声体波反射效应的流体密度声传感器

研究了一种新型的流体密度声传感器，其结构为压电基片－液体层－各向同性固体板。在特定取向压电基片的背离液体层的表面上有两个叉指数换能器，选择恰当的叉指换能器激励频率，可得到较强的声体波呼应。叉指换能器激励的声体波在传感器对应的层状结构中来回反射，液体层密度的变化，将从输出叉指换能器的相位或群延时中得到反映。实验结果表明，对于蒸馏水溶液，当其密度相对变化为１０＾－６时能予以分辨。     

一种采用IDT技术的新型高频声体波换能器

压电晶体一液体界面的叉指换能器在一定频率的电信号激励下将仅向液体介质中辐射声体波，可将这一效应用于高频声体波超声换能器的制作。通过分析与计算压电晶体一液体的界面有效介电常数虚部，可确定出叉指换能器仅向液体中辐射声体波的表面慢度。根据待激发声体波的频率和慢度，可得到叉指换能器仅向液体中辐射声体波时的周期。考虑到叉指换能器直接接触液体并向液体中辐射声体波，可在叉指换能器表面敷设一层SiO3薄膜以保护电极。该类换能器的最大优点是不需匹配层而直接向液体中辐射声波，其工作频率上限原则上只受声表面波工艺限制。设计并制作出频率为31．5MHz的声体波超声换能器，实测了频响，与理论相符。     

IDT在压电晶体—液体界面上的声体波激励

压电晶体－液体界面上的叉指换能器（ＩＤＴ）可向液固介质内激励声体波,这一效应可用于液体声传感器的研制。文章通过引入压电晶体－液体界面的界面有效介电常数,研究了ＩＤＴ的声体波激励强弱与晶体取向之间的关系,给出了最强声体波激励时的晶体取向;同时,还分析了ＩＤＴ仅向液体内激励声体波的情形。     

压电晶体—液体界面上IDT对入射声体波的接收

压电晶体－液体－压电晶体分层结构可用于液体声传感器的研制,两个叉指换能器分别位于两个相向的压电晶体－液体界面上,一个ＩＤＴ向液体中激励声体波,另一个ＩＤＴ接收液体中的声体波。文章通过采用恰当的压电晶体液体界面上的边界条件,研究了ＩＤＴ对声体波的接收,给出了ＩＤＴ的输出电功率与声体波入射角。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.