6GHz新型高速低功耗分频器

高速数字分频器在基于锁相环的时钟产生电路中具有广泛的应用．在典型D触发器的基础上,文中提出了一种可响应6GHz输入时钟的改进型二分频结构,并实现了2-256连续分频的新型吞脉冲多模分频器．新型分频器结构简单并且不需要双模预分频单元,功耗和面积开销大幅度的降低．基于65rimCMOS工艺设计实现了该高速分频器,版图后仿真结果表明,分频器功能正确,且工作于6GHz时功耗不大于1．3mW．     

新型双模前置32/33分频器设计

提出了一种新颖的分频器设计方案,在高频段采用改进的CMOS源耦合逻辑(SCL)结构的主从D-Latch进行分频;在低频段采用自锁存的D触发器进行分频,从而实现高速、低功耗、低噪声双模前置32/33分频器。基于TSMC的0.18!mCMOS工艺,利用CadenceSpectre工具进行仿真。该分频器最高工作频率可达到5GHz,在27℃、电源电压为1.8V、工作频率为5GHz时,电路的功耗仅4.32mW(1.8V×2.4mA)。     

应用于26 GHz-41 GHz频率综合器的高速可编程分频器的设计

毫米波频率综合器中的重要模块之一高速可编程多模分频器,它主要用于对VCO的输出信号进行分频从而获得稳定的本振信号,它的性能影响整个毫米波频率综合器性能。本文设计的一种高速、低功耗、分频比可变的分频器具有非常重要的意义[1]。根据26 GHz-41 GHz硅基锁相环频率综合器的系统指标,本文基于TSMC 45nm CMOS工艺,设计实现了一种高速可编程分频器。本文采用注入锁定结构分频结构实现高速预分频,该结构可以实现在0 d Bm的输入功率下实现25 GHz-48 GHz的分频范围、最低功耗为:2.6 m W。基于脉冲吞咽计数器的可编程分频器由8/9双模分频器和可编程脉冲吞咽计数器组成。其中8/9双模分频器由同步4/5分频器和异步二分频构成,工作频率范围10 GHz-27 GHz,最低输入幅度为:300 m V,最低功耗为:1.6 m V。可编程吞咽计数器采用改进型带置数功能的TSPC D触发器,该可编程分频器的最大工作范围:25 GHz;最小功耗为:363μW。本文设计的高速可编程多模分频器,可以实现32-2 062的分频比;当工作于28 GHz时,相位噪声小于-159 dBc/Hz。动态功耗为5.2 m W。     

高性能双模前置分频器设计

提出了一种新颖的分频器设计方案,在高频段采用改进的CMOS源耦合逻辑(SCL)结构的主从D触发器进行分频,以满足高速要求;在低频段采用自锁存的D触发器进行分频.这种结构的D触发器不但具有锁存功能,而且所需的管子比主从式D触发器要少,以满足低功耗和低噪声要求.从而使总体电路实现高速、低功耗、低噪声要求.基于TSMC的0.18 μmCMOS工艺,利用Cadence Spectre工具进行仿真.该分频器最高工作频率可达到5 GHz,在27 ℃、电源电压为1.8 V、工作频率为5 GHz时,电路的功耗仅4.32 mW.     

一种CMOS高速可编程双模前置分频器

在锁相环设计中,双模前置分频器(dual—modulus prescaler)是一个速度瓶颈,而D触发器是限制其速度的主要因素。我们对传统的Yuan-Svensson真正单相时钟(TSPC)D触发器(DFF)做了改进,给出了动态有比D触发器的结构,该触发器结构简单,工作频率高,功耗低。并基于此设计了一个可变分频比双模前置分频器,可适用于多种无线通信标准。采用0．35μm CMOS工艺参数进行仿真,结果表明,在3．3V电源电压下其工作频率可达4．1GHz。     

一种新型的宽带低相位噪声2分频器

通过对各种2分频器结构的研究,提出一种新结构的D触发器。由此触发器组成的2分频器具有宽带低相位噪声的特点。与传统的动态SCL结构的D触发器相比,通过在D触发器的输入对管的耦合端口和时钟端口之间加一个开关管,扩展了工作带宽并同时保持了低的相位噪声。此芯片采用IBM 的90nm CMOS工艺。测试结果表明,此2分频器工作的频率范围为：0.05-10GHz。工作频率为10GHz时,输出信号的相位噪声在频偏1MHz处为-159.8 dBc/Hz 。工作电压为1.2V,功耗为9.12mW。核心芯片面积仅为0.008mm2。     

一种新型的超高频低功耗预置分频器结构

介绍了一种新型的具有超高频低功耗特点的ＥＣＬ预置分频器逻辑结构。该结构采取分频逻辑单元，后级单元的输出信号通过反馈逻辑控制第一级分频单元的触发器复位端来实现模娄物改变，避免了反馈信号时延对电路工作速度的影响。在适当减小单元电路的逻辑摆幅和工作电流的同时，主、从触发器之间直接耦合。省略级间耦合的射极跟随器，实现低国耗工作。此结构用于双极电路ＳＥ１２０２２四模预置分频器，在在全温－５５－１２５℃范围内     

一种多模可编程前置分频器的设计

针对目前大多数射频可调谐芯片中前置分频器多为双模结构,设计了一种基于2/3分频单元的可编程多模(64～127)前置分频器.采用0.35 μm SiGe BiCMOS工艺,在工作电源电压Vdd=5 V,输入频率为2.2 GHz的情况下,可实现分频比为64～127之间的可编程多值分频,功耗为37.18 mW.     

0.6μm CMOS静态分频器电路设计

分频器目前已经广泛用于光纤通信系统和无线通信系统．本文提出了一个利用0．6μmCMOS工艺实现的1：2静态分频器设计方法。在设计高速分频电路时,由于源极耦合逻辑电路比传统的CMOS静态逻辑电路具有更高的速度,所以我们采用了源极耦合逻辑电路来实现D触发器的设计,并用SmartSpice进行了仿真。测试结果表明．当电源电压为5．0V．输入信号峰峰值为1.6V时。电路可以工作在580MHz、功耗为12mW。本文提出的电路适用于SDH STM-1／4的光纤通信系统。     

射频接收机中低抖动双模分频器

对射频接收机中双模分频器的设计和应用进行了研究，提出了一种改进型D-latch以提高双模分频器速度与驱动能力,一种将D-latch与“或”逻辑门集成的结构以降低电路的复杂度.采用TSMC0.18μm CMOS混合信号工艺实现了用于地面数字电视接收机的除16/17双模分频器，采用0.18μmCMOS标准单元库设计并以与双模分频器同样的工艺实现了可编程吞吐式脉冲分频器，测试结果显示双模分频器的输出抖动小于0.03%,而且能够与可编程吞吐式脉冲分频器良好地配合工作。     

基于门控时钟技术的低功耗三值D型触发器设计

本文在三值D型触发器的基础上提出了一种低功耗三值门控时钟D型触发器的设计.该设计通过抑制触发器的冗余触发来降低功耗,PSPICE模拟验证了该触发器具有正确的逻辑功能.与三值D触发器相比,该触发器在输入信号开关活动性较低的情况下具有更低的功耗.同时该电路结构可以推广到基值更高的低功耗多值触发器的设计中.     

高速AlGaAs/GaAs HBT D-触发器和静态分频器

叙述了高速 Al Ga As/ Ga As HBT D-触发器和静态分频器的设计、制造和性能。用电流型逻辑和自对准工艺 ,D-触发器上升和下降时间都小于 80 ps,静态分频器在 0～ 8GHz频率范围功能正确     

高速低功耗多模分频器的设计

基于相位转换技术的多模分频器由于其在工作频率和功耗中能更好地折中而得到广泛的应用.为了进一步降低功耗,利用两级反相器对其相位信号进行整形,使工作频率最高的前两级÷2分频器能降低输出幅度的要求,从而大大降低功耗.这两级反相器还可以调整相位信号占空比为25%,甚至更小,从而增大相位控制信号的延时余量,实现无毛刺的加计数相位转换.基于相位转换4模分频器的基本原理,设计了一个2.55 GHz的多模分频器.仿真结果表明,采用0.35μm BiCMOS工艺,在3.3 V电源电压下,分频值为128～255,最大功耗不到14 mW.     

Ultrahigh-speed heterojunction bipolar transistormultiplexer/demultiplexer ICs

High-speed 2-b monolithic integrated multiplexer (MUX) and demultiplexer (DMUX) circuits have been developed using self-aligned AlGaAs/GaAs heterojunction bipolar transistors (HBTs) with improved high-speed performance. Both ICs were designed using emitter-coupled logic. The 2:1 MUX was composed of a D-type flip-flop (D-FF) merging a selector gate and a T-type flip-flop (T-FF). The 1:2 DMUX consisted of two D-FFs driven at a clock of half the rate of the input data. Error-free operation with a pseudorandom pattern was confirmed up to 10 Gb/s. The rise and fall times of the output signals of both ICs were 40 and 25 ps, respectively. HBT frequency dividers were used as inputs for both ICs in order to find the maximum operation speed. Although only a few test patterns were available, the maximum operation speeds of the MUX and DMUX were found to be around 15 and 19 Gb/s, respectively     

0.35μm CMOS 8.5GHz 1∶8分频器的设计

实现了一个基于触发器结构用0.35μm CMOS工艺实现的1∶8分频器.它由3级1∶2 分频器单元组成,其中第一级为动态分频器,决定了整个芯片的性能,第二、三级为静态分频器,在低频下能稳定工作.分频器采用源极耦合逻辑电路,并在传统的电路结构上进行改进,提高了电路的性能.测试的结果表明,芯片工作速率超过8.5GHz,工作带宽大于2GHz.电路在3.3V电源电压下工作,每个1∶2分频器单元的功耗约为11mW,面积为35μm×50μm.该芯片可应用于高速射频或光电收发机系统中.     

Programmable logic circuits for functional integrated smart plastic systems

In this paper, we present a functional integrated plastic system. We have fabricated arrays of organic thin-film transistors (OTFTs) and printed electronic components driving an electrophoretic ink display up to 70 mm by 70 mm on a single flexible transparent plastic foil. Transistor arrays were quickly and reliably configured for different logic functions by an additional process step of inkjet printing conductive silver wires and poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) resistors between transistors or between logic blocks. Among the circuit functions and features demonstrated on the arrays are a 7-stage ring oscillator, a D-type flip-flop memory element, a 2:4 demultiplexer, a programmable array logic device (PAL), and printed wires and resistors. Touch input sensors were also printed, thus only external batteries were required for a complete electronic subsystem. The PAL featured 8 inputs, 8 outputs, 32 product terms, and had 1260 p-type polymer transistors in a 3-metal process using diode-load logic. To the best of our knowledge, this is the first time that a PAL concept with organic transistors has been demonstrated, and also the first time that organic transistors have been used as the control logic for a flexible display which have both been integrated on to a single plastic substrate. The versatility afforded by the additive inkjet printing process is well suited to organic programmable logic on plastic substrates, in effect, making flexible organic electronics more flexible.     

一种超高速触发器工艺技术的研究

在等平面Ｓ工艺基础上，开发了一种ＥＣＬ超高速Ｄ触发器的ＩＣ工艺制作技术，并优化其关键工艺，得出一套新的工艺控制方案和参数。用该工艺技术制作的晶体管截止频率ｆＴ最大值为５．４ＧＨｚ（Ｖｃｅ＝５Ｖ）；制作的ＥＣＬ超高速Ｄ触发器，在功耗电流只有３０ｍＡ情况下，工作频率典型值为８５０ＭＨｚ，最高可达９００ＭＨｚ以上，较好地解决了器件速度与功耗的矛盾。     

一种用于高速锁相环的整数分频器设计

根据IEEE 802.3ae XAUI协议中锁相环的设计指标,基于65 nm CMOS工艺,设计实现了一种高速可编程整数分频器。采用高性能D型触发器对压控振荡器输出时钟进行预分频,分频器由4/5双模预分频器、2 Bit和5 Bit计数器组成,可实现8~131的连续分频比。[JP]仿真结果表明,在1 V供电条件下,分频器最高工作频率可达4.375 GHz,消耗电流＜0.4 mA。     

An E-Beam Fabricated GaAs D-Type Flip-Flop IC

A first generation of monolithic digital IC's using normally-on type GaAs MESFET's with 1.2-mu m gate length was initially developed. This technology leads to logic gates with propagation delays in the range 130-170 ps. It was applied to the fabrication of an edge-triggered D-type flip-flop IC whose perfomance is presented: minimum data pulsewidth (350 ps), maximum toggle frequency (up to 1.6 GHz), data input sensitivity. An improved technology intended for higher speeds is now under development. It utilizes direct-writing E-beam lithography to delineate 0.75-mu m gate length devices with extremely high alignment accuracy. This fabrication process leads to 61 ps (4 pJ) or 68 ps (2 pJ) propagation delays measured on a dual-ring oscillator test circuit. Recent advances in N/N/sup -/ epitaxial deposition techniques make these performances very uniform and satisfactorily reproducible. D-type flip-flop IC's have been fabricated with this new technology using a reduced (-1 to -1.5 V) pinchoff voltage value. Stable D-type operation up to 3-GHz clocking frequencies has been experimentally observed with a corresponding speed-power product of 2.6 pJ/gate.     

Design of an Improved CMOS Phase/Frequency Detector

A complementary metal oxide semiconductor (CMOS) phase/frequency detector (PFD) is presented. An improved CMOS D-type master-slave flip-flop is described and adopted in the PFD. Higher speed and lower power operation is attributed to the reduced node capacitance. Charge-sharing phenomena are circumvented in the proposed flip-flop and PFD. The maximum frequency of operation of the PFD is analytically studied. Device-sizing equations, based upon a first-order approximation, for the PFD are derived. The proposed PFD shows improvements in both phase and frequency sensitivities at high operating frequencies. HSPICE simulations of a phase-locked loop (PLL) employing the improved PFD demonstrate a faster frequency acquisition. The PLL simulations also verify that the maximum operating frequency of the PFD is in agreement with our analytical results.