High spectral purity microwave oscillator: design using conventional air-dielectric cavity

We report exceptionally low PM noise levels from a microwave oscillator that uses a conventional air-dielectric cavity resonator as a frequency discriminator. Our approach is to increase the discriminator's intrinsic signal-to-noise ratio by use of a high-power carrier signal to interrogate an optimally coupled cavity, while the high-level of the carrier is suppressed before the phase detector. We developed and tested an accurate model of the expected PM noise that indicates, among other things, that a conventional air-dielectric resonator of moderate Q will exhibit less discriminator noise in this approach than do more esoteric and expensive dielectric resonators tuned to a high-order, high-Q mode and driven at the dielectric's optimum     

High-Q whispering gallery traveling wave resonators for oscillator frequency stabilization

Usually a frequency-stabilized standing wave resonator-oscillator incorporating a resonator as a frequency discriminator requires a circulator to separate the injected and reflected wave, A ferrite circulator is a noisy device and can limit the phase noise or frequency stability. Moreover, we show that the noise in a circulator varies, and detailed low noise measurements are necessary to choose an appropriate quiet circulator. Thus, by realizing a configuration that does not require a circulator, an improvement in performance and reliability can be obtained. A solution to this problem is to design a high-Q whispering gallery traveling wave (WGTW) resonator. This device naturally separates the injected and reflected wave in the same way as a ring cavity at optical frequencies, without degrading the frequency discrimination. Q-factor measurements of a WGTW sapphire resonator are presented, along with a derivation of critical parameters to maximize the frequency discrimination. New measurements of noise in ferrite circulators and isolators have also been made, which is followed with a discussion on oscillator design.     

Amplitude response of Fabry-Perot frequency discriminators

The amplitude noise responses of optical-frequency-discriminating systems, based on Fabry-Perot cavities with intensity noise compensation, are analyzed considering also the effect of the resonator transient. From the point of view of amplitude noise immunity, systems based on transmission or reflection alone behave in a quite similar way within the discriminator bandwidth, whereas a proper combination of both these signals not only increases the sensitivity to frequency noise but also allows for higher rejection to amplitude noise.     

HF and VHF Source Stabilization Technique Incorporating Q-Multiplied Quartz Crystal Resonator

A new approach is described for the desiga of HF/VHF crystal-controlled frequency sources exhibiting theoretical short-term stability unattainable through the use of conventional quartz oscillator design. The signal generator design uses the concept of AFC stabilization of a conventional quartz oscillator (VCXO) by means of a crystal-controlled highly selective active frequency reference. The AFC reference is a phase-shift type frequency discriminator that employs a product detector and an active Q-multiplied quartz crystal resonator. The extremely selective transmission response, large group delay, and power gain exhibited by the resonator, together with resonator phase noise levels comparable to that exhibited by the oscillator-maintaining circuit, provide the principal means for prediction of superior output signal spectral purity. Models of the resonators have been designed and constructed at 30 and 80 MHz, exhibiting 3-dB bandwidths of 30 and 160 Hz, respectively. Based on actual measurement of VHF Q-multiplied crystal resonator performance characteristics, approximately 16 dB improvement in VHF crystal-controlled frequency source spectral purity at low and moderate modulation rates is possible, compared to that attainable using the best available VHF quartz oscillator circuit designs.     

Cooled, ultrahigh Q, sapphire dielectric resonators for low-noise, microwave signal generation

Ultra-high Q, X-band resonators, used in a frequency discriminator for stabilization of a low-noise signal generator, can provide a means of obtaining significant reduction in phase noise levels. Resonator unloaded Qs on the order of 500 K can be obtained in sapphire dielectric resonator (DR) operating on a low-order (i.e. TE(01)) mode at 77 K and employing high-temperature superconducting (HTS) films installed in the DR enclosure covers. Rigorous analysis for the determination of resonator frequency, modes, and unloaded Q have been carried out using mode matching techniques. Trade-off studies have been performed to select resonator dimensions for the optimum mode yielding highest unloaded Q and widest spurious mode separation. Field distributions within the resonator have been computed to enable practical excitation of the required mode. The results of both analysis and prototype device evaluation experiments are compared for resonators fabricated using enclosures consisting of conventional, metal sidewalls and covers employing HTS films as a function of cover conductivity.     

Prototype of a microwave generator with a high-temperature superconductor disk resonator in a feedback circuit with a low phase-noise level

Phase noise of a prototype of microwave generator with a disk resonator based on high-temperature superconductor (HTSC) Y₁Ba₂Cu₃O_{7 ? δ} films in the feedback circuit has been measured for the first time. The disk resonator was cooled to a temperature of 77 K, while the other generator components remained at room temperature. The generator carrier frequency was 7.5 GHz. Phase noises have been measured for different offsets from the carrier frequency. For example, the minimum measured phase-noise level was found to be 136.2 dB/Hz for a 10-kHz offset from the carrier frequency. It is shown that the results obtained correspond to the classical Leeson formula with flicker noise neglected. Thus, a disk resonator based on Y₁Ba₂Cu₃O_{7 ? δ} films does not introduce additional noise (in comparison with the amplifier noise) at small offsets and, correspondingly, is promising for microwave generators with extremely low phase noise. The possibility of further decrease in the phase-noise level by increasing the Q factor of the HTSC disk resonator and optimizing its housing design is discussed.     

Residual phase noise measurements of VHF, UHF, and microwavecomponents

The results of residual phase noise measurements on a number of VHF, UHF, and microwave amplifiers, both silicon (Si) bipolar junction transistor (BJT) and gallium arsenide (GaAs) field effect transistor (FET) based, electronic phase shifters, frequency dividers and multipliers, etc., which are commonly used in a wide variety of frequency source and synthesizer applications are presented. The measurement technique has also been used to evaluate feedback oscillator components, such as the loop and buffer amplifiers, which can play important roles in determining an oscillator's output phase noise spectrum (often in very subtle ways). While some information has previously been published related to component residual phase noise properties, it generally focused on the flicker noise levels of the devices under test, for carrier offset frequencies less than 10 kHz. The work reported herein makes use of an extremely low noise, 500 MHz surface acoustic wave resonator oscillator (SAWRO) test source for residual phase noise measurements, both close-to-and far-from-the-carrier. Using this SAWRO-based test source at 500 MHz, we have been able to achieve a measurement system phase noise floor of -184 dBc/Hz, or better, for carrier offset frequencies greater than 10 kHz, and a system flicker phase noise floor of -150 dBc/Hz, or better, at 1 Hz carrier offset. The paper discusses the results of detailed residual phase noise measurements performed on a number of components using this overall system configuration. Several interesting observations related to the residual phase noise properties of moderate to high power RF amplifiers, i.e., amplifiers with 1 dB gain compression points in the range of +20 to +33 dBm, are highlighted     

Conversion of 1/f fluctuations in crystal resonator within an inter resonance gap

This paper presents general relationships for transformation coefficients of BAW or SAW crystal resonator amplitude and phase fluctuations through the 1/f flicker noises of its motional and static equivalent parameters within the resonator inter resonance gap. Approximate functions of phase and amplitude power spectral densities are found based on Leeson's oscillator open loop model and are given with detailed consideration of Butler and Colpitts modes of operation with the assumption of full and zero inter noise correlation. It is also substantiated that a low-noise frequency region of crystal resonator operation exists in which the fluctuation influence of its motional inductance and capacity tend to zero in oscillators. Five examples are given as an illustration of a good agreement of the measured data with the prediction curves, giving a possibility of resonator power phase and amplitude spectral densities valuation at an arbitrary offset frequency from the carrier through the 1/f flicker noises of resonator parameters. Emphasis is laid in conclusion on the possible way of parameter spectral densities definition.     

An ultralow noise microwave oscillator based on a high-Q liquidnitrogen cooled sapphire resonator

Two liquid nitrogen-cooled sapphire loaded cavities (SLC's) operating at about 80 K have been successfully constructed, Both cavities were designed to operate on the whispering gallery (WG) E_{12, 1, δ} mode at a resonant frequency of 8.95 GHz. The first SLC was used as the frequency-determining element in a loop oscillator, while the second was used as a frequency discriminator to measure oscillator phase noise. The single sideband phase noise of a free running loop oscillator incorporating the first SLC was measured as -133 dBc/Hz at an offset frequency of 1 kHz, and was limited by the SLC Q-factor and the amplifier flicker phase noise. By using specially designed feedback electronics the oscillator phase noise was reduced to -156 dBc/Hz and -162 dBc/Hz at 1 and 10 kHz offset, respectively. This measurement was shown to be limited by the electronic flicker noise imposed by the phase detector in the feedback electronics, To our knowledge the phase noise and resonator Q-factor of 6×10⁷ represent the best results ever measured at liquid nitrogen temperatures or above     

Surface adsorbate fluctuations and noise in nanoelectromechanical systems

Physisorption on solid surfaces is important in both fundamental studies and technology. Adsorbates can also be critical for the performance of miniature electromechanical resonators and sensors. Advances in resonant nanoelectromechanical systems (NEMS), particularly mass sensitivity attaining the single-molecule level, make it possible to probe surface physics in a new regime, where a small number of adatoms cause a detectable frequency shift in a high quality factor (Q) NEMS resonator, and adsorbate fluctuations result in resonance frequency noise. Here we report measurements and analysis of the kinetics and fluctuations of physisorbed xenon (Xe) atoms on a high-Q NEMS resonator vibrating at 190.5 MHz. The measured adsorption spectrum and frequency noise, combined with analytic modeling of surface diffusion and adsorption-desorption processes, suggest that diffusion dominates the observed excess noise. This study also reveals new power laws of frequency noise induced by diffusion, which could be important in other low-dimensional nanoscale systems.     

Measurement and analysis of a microwave oscillator stabilized by a sapphire dielectric ring resonator for ultra-low noise

Phase-noise measurements are presented for a microwave oscillator whose frequency is stabilized by a whispering gallery mode sapphire ring resonator with Q of 2x10(5). The nature of the mode, which involves little metallic conduction, allows nearly full use of the very low dielectric loss in sapphire. Several mode families have been identified with good agreement with calculated frequency predictions. Waveguide coupling parameters have been characterized for the principal (lowest frequency) mode family, for n=5 to n =10 full waves around the perimeter. For a 5-cm wheel resonator in a 7.6-cm container, Q-values of above 10(5) were found at room temperature for all of the modes in this sequence. Coupling Q-values for the same modes ranged from 10(4) (n =5) to 10(5) (n=10) for a WR112 waveguide port at the center of the cylinder wall of the containing can. Phase noise measurements for a transistor oscillator locked to the n=10 (7.84-GHz) mode showed a 1/f(3) dependence for low offset frequencies, and a value of L(f)=-55 dB/Hz at an offset of 10 Hz from the carrier. The oscillator shows phase noise below the previously reported for any X-band source.     

An X-band, high power dielectric resonator oscillator for future military systems

A 9.0-GHz dielectric resonator oscillator (DRO), generating a CW output power of 2.5 W at room temperature, has been designed and fabricated using a high-power GaAs MESFET and a dielectric resonator (DR) in a parallel feedback configuration. The oscillator exhibited a frequency stability of better than 130 ppm, without any temperature compensation, over the range -50 degrees C to +50 degrees C. The output power varied from +35 dBm (3.2 W) at -50 degrees C to +33 dBm (2 W) at +50 degrees C. The single-sideband phase noise levels were measured and found to be -105 and -135 dBc/Hz, at 10- and 100-kHz carrier offset frequencies, respectively. The oscillator output was then fed into a single-stage high-power MESFET amplifier, resulting in a total RF power output of 6.5 W. The overall DC to RF conversion efficiency of the 6.5-W unit was approximately 15.3%     

Tunable microwave resonators and oscillators using magnetostatic waves

The status of magnetostatic wave (MSW) straight-edge resonators (SERs) and their applications in tunable oscillator circuits are reviewed. The resonators are based on magnetostatic waves propagating in high-Q cavities fabricated in thin ferrimagnetic yttrium iron garnet (YIG) films. The resonance frequency of these resonators can be tuned using a bias magnetic field. The theory of operation and design criteria for the straight-edge resonators are described with emphasis on the effect of the resonator parameters on the tuning range, power handling, and phase noise performance. The use of the SER as the frequency-selective element in oscillator circuits is reported. Examples of tunable oscillators are included.     

1.5-GHz voltage controlled oscillator with 3% tuning bandwidth using a two-pole DSBAR filter

First results on a novel voltage controlled oscillator (VCO) in the lower gigahertz range, featuring excellent phase noise and high power efficiency are presented. The heart of the VCO is a recently reported novel miniature two-pole decoupled stacked bulk acoustic resonator (DSBAR) filter. With its single 180° phase transition over the 1 dB bandwidth, linear phase, and maximum 1 dB insertion loss, it provides stable single-mode operation over 45 MHz (≈3%) of tuning bandwidth and has negligible heat dissipation when operated at incident power levels of 100 mW or greater. The 1.55-GHz laboratory VCO prototypes operate at 5 V supply voltage, 50 mA supply current, 15 dBm of output power, and >13% efficiency, demonstrating -84 and < -180 dBc/Hz phase noise suppression at 1 kHz carrier offset and in the thermal noise region, respectively. VCOs with cascaded DSBAR filters for further phase noise reduction are also demonstrated.     

A hybrid superconductor/GaAs-MESFET microwave oscillator at 10.6 GHz

A 10.6 GHz hybrid superconducting film/GaAs-MESFET microwave oscillator has been designed, fabricated and characterized on a 10 mm × 15 mm LaAlO₃ substrate. The oscillator was a reflection mode type using a GaAs MESFET (NE72084) as the active device and a superconducting microstrip resonator as the frequency stabilizing element. By improving the unloaded quality factor of the superconducting microstrip resonator and adjusting coupling coefficient between the resonator and the MESFET, the phase noise of the oscillator was decreased. At 77 K, the phase noise of the oscillator at 10 KHz offset from carrier was −87 dBc/Hz.     

Optimization of an ultra low-phase noise sapphire--SiGe HBT oscillator using nonlinear CAD

In this paper, the electrical and noise performances of a 0.8 /spl mu/m silicon germanium (SiGe) transistor optimized for the design of low phase-noise circuits are described. A nonlinear model developed for the transistor and its use for the design of a low-phase noise C band sapphire resonator oscillator are also reported. The best measured phase noise (at ambient temperature) is -138 dBc/Hz at 1 kHz offset from a 4.85 GHz carrier frequency, with a loaded Q/sub L/ factor of 75,000.     

Limitation of the frequency stability by local oscillator phase noise: new investigations and natural improvements

In frequency standards in which the atoms have a continuous interaction with the probe signal, local oscillator phase noise may limit medium term frequency stability. This spurious effect cannot be suppressed whenever there Is any truncation in the spectrum of the resonator response. Nevertheless, a simultaneous processing of the probe signal, similar to that of the NIST, and of the resonator response (by means of an appropriate demodulation) makes it possible to reduce this limiting effect. Previously achieved with a square wave frequency modulation, this result is now extended to various frequency modulations. An uncontrolled distortion in the demodulation waveform may significantly degrade the performance. For the case of a square wave phase modulation, the limiting effect also exists, but it is smaller than for a frequency modulation. When the phase noise of the local oscillator is naturally "not flat", it is possible to easily reduce the spurious effect: using the quasi-static approximation, one can calculate various optimized demodulation waveforms and the corresponding improvements. For the simplest optimized demodulation (f (M), 3f(M)), theoretical predictions are experimentally confirmed for flicker phase noise and flicker frequency noise.     

Motion of contrast envelopes: peace and noise

We examined the effect of changing the composition of the carrier on the perception of motion in a drifting contrast envelope. Human observers were required to discriminate the direction of motion of contrast modulations of an underlying carrier as a function of temporal frequency and scaled (carrier) contrast. The carriers were modulations of both color and luminance, defined within a cardinal color space. Random-noise carriers had either binary luminance profiles or flat (gray-scale-white) or 1/f (pink) spectral power functions. Independent variables investigated were the envelope spatial frequency and temporal-drift frequency and the fundamental spatial frequency, color, and temporal-update frequency of the carrier. The results show that observers were able to discriminate correctly the direction of envelope motion for binary-noise carriers at both high (16 Hz) and low (2 Hz) temporal-drift frequencies. Changing the carrier format from binary noise to a flat (gray-scale) or 1/f amplitude profile reduced discrimination performance slightly but only in the high-temporal-frequency condition. Manipulation of the fundamental frequency of the carrier elicited no change in performance at the low temporal frequencies but produced ambiguous or reversed motion at the higher temporal frequencies as soon as the fundamental frequency was higher than the envelope modulation frequency. We found that envelope motion detection was sensitive to the structure of the carrier.     

Extremely low thermal noise floor, high power oscillators usingsurface transverse wave devices

This paper presents state-of-the-art results on 1-GHz surface transverse wave (STW) oscillators running at extremely high loop power levels. The high-Q single-mode STW resonators used in these designs have an insertion loss of 3.6 dB, an unloaded Q of 8000, a residual PM noise of -142 dBc/Hz at a 1-Hz carrier offset, and operate at an incident power of up to +31 dBm in the loop. Other low-Q STW resonators and coupled resonator filters (CRF), with insertion losses in the 5-9 dB range, can conveniently handle power levels in excess of two Watts. These devices were incorporated into voltage controlled oscillators (VCO's) running from a 9.6-V dc source and provide an RF output power of +23 dBm at an RF/dc efficiency of 28%. Their tuning range was 750 kHz and the PM noise floor was -180 dBc/Hz. The oscillators, stabilized with the high-Q devices and using specially designed AB-class power amplifiers, delivered an output power of +29 dBm and exhibited a PM noise floor of -184 dBc/Hz and a 1-Hz phase noise level of -17 dBc/Hz. The 1-Hz phase noise level was improved to -33 dBc/Hz using a commercially available loop amplifier. In this case, the output power was +22 dBm. In all cases studied, the loop amplifier was found to be the factor limiting the close-to-carrier oscillator phase noise performance     

On the 1/f frequency noise in ultra-stable quartz oscillators

The frequency flicker of an oscillator, which appears as a 1/f3 line in the phase noise spectral density, and as a floor on the Allan deviation plot, originates from two basic phenomena, namely, (1) the 1/f phase noise turned into 1/f frequency noise via the Leeson effect, and (2) the 1/f fluctuation of the resonator natural frequency. The discussion on which is the dominant effect, thus on how to improve the stability of the oscillator, has been going on for years without giving a clear answer. This article tackles the question by analyzing the phase noise spectrum of several commercial oscillators and laboratory prototypes, and demonstrates that the fluctuation of the resonator natural frequency is the dominant effect. The investigation method starts from reverse engineering the oscillator phase noise in order to show that if the Leeson effect was dominant, the resonator merit factor Q would be too low as compared to the available technology.