不同晶型Fe2O3催化H2O2湿法脱硝的实验研究

研究了以α-Fe₂O₃、β-Fe₂O₃和γ-Fe₂O₃为催化剂的类Fenton试剂溶液氧化吸收NO的过程,分析了3种Fe₂O₃的晶相结构和表面性质对NO脱除效率的影响机理。脱硝性能测试结果表明：γ-Fe₂O₃的活性最好,在H₂O₂浓度为1.5 mol/L、催化剂浓度为20 mmol/L、pH值为5以及反应温度为55℃等条件下,γ-Fe₂O₃的脱硝率可达87.5%。机理研究表明：3种Fe₂O₃催化H₂O₂分解湿法脱除NO的反应发生在催化剂表面,反应过程中存在氧化还原循环,H₂O₂催化分解的主要产物是·OH。活性差异分析结果表明：Fe₂O₃的晶相结构和表面性质对NO的脱除效果具有显著的影响,γ-Fe₂O₃的活性最高是由于比表面积大、分散性高和表面的Fe²⁺含量更多,而β-Fe₂O₃的活性高于α-Fe₂O₃是由于表面的氧空位含量更多。     

High performances boron doped γ-Fe2O3particles prepared from oxalic precursors

γ-Fe₂O₃ particles (L≈0.15 to 0.2 μm, L/D≈2 to 5) with coercivity up to 400 Oe have been prepared from oxalic precursors. To preserve the particle form, the oxalates were doped with boron. The effects due to this element was studied during the different thermal treatments which effect the pseudomorphous transformation of oxalate particles into spinel ferrite. ESCA spectroscopy, and X-ray measurements could point out the presence of a Fe₃BO₅ phase at the surface of γ-Fe₂O₃ particles. In spite of the important mass losses (H₂O, CO, CO₂) and the important crystallographic structure modifications occurring during the transformation of oxalate into magnetic oxide, γ-Fe₂O ₃ particles obtained by this method have very good textural characteristics. Boron-doped γ-Fe₂O₃ particles were used to make 3.5-in diskettes with standard formulation. In these conditions, media properties were comparable to trading diskettes properties     

Topotactic conversions of γ-FeOOH and comparative transformation methods of iron oxides in magnetic spinels

The DTA of a natural, well crystallized lepidocrocite sample containing small amounts of goethite, quartz and manganese shows that the conversion of γ-FeOOH to -Fe₂O₃ (through the γ-Fe₂O₃ metastable phase) occurs at 440°C, whereas in pure, synthetic γ-FeOOH the exothermic peak appears at ˜ 500°. Quartz (1.4% SiO₂) is not affected, nor does it hamper the transformation of FeOOH into magnetic spinels, when the sample is reacted with glycerol at reflux temperature followed by hydrolysis of the resulting solid (iron alkoxide) by boiling H₂O. Starting γ-FeOOH and final solid products are characterized by XRD and IR spectroscopy. This reaction is also discussed comparatively with the solid state transformations of iron oxides into magnetic materials by a combination of heating and grinding-pressing cycles of disks containing alkali halides as diluting agents.     

Synthesis, structure refinement and characterization of tetrahydrated acid gadolinium diphosphate HGdP2O7·4H2O

Synthesis and single crystal structure are reported for a new gadolinium acid diphosphate tetrahydrate HGdP₂O₇·4H₂O. This salt crystallizes in the monoclinic system, space group P2₁/n, with the following unit-cell parameters: a = 6.6137(2) Å, b = 11.4954(4) Å, c = 11.377(4) Å, β = 87.53(2)° and Z = 4. Its crystal structure was refined to R = 0.0333 using 1783 reflections. The corresponding atomic arrangement can be described as an alternation of corrugated layers of monohydrogendiphosphate groups and GdO₈ polyhedra parallel to the () plane. The cohesion between the different diphosphoric groups is provided by strong hydrogen bonding involving the W4 water molecule.

IR and Raman spectra of HGdP₂O₇·4H₂O confirm the existence of the characteristic bands of diphosphate group in 980–700 cm⁻¹ area. The IR spectrum reveals also the characteristic bands of water molecules vibration (3600–3230 cm⁻¹) and acidic hydrogen ones (2340 cm⁻¹). TG and DTA investigations show that the dehydration of this salt occurs between 79 and 900 °C. It decomposes after dehydration into an amorphous phase. Gadolinium diphosphate Gd₄(P₂O₇)₃ was obtained by heating HGdP₂O₇·4H₂O in a static air furnace at 850 °C for 48 h.     

Carburization performance of Incoloy 800HT in CH4/H2 gas mixtures

Carburization performance of Incoloy 800HT has been studied after cyclic and isothermal exposures to CH₄/H₂ carburizing gas mixtures at high temperatures for 500 h. At 800 °C in 2% CH₄/H₂, Incoloy 800HT suffered external oxidation and carburization, the external continuous layer of reaction products consists primarily of Cr₇C₃, Mn_1.5Cr_1.5O₄, and FeCr₂O₄ with Fe(Cr, Al)₂O₄ as a minor phase. At 1100 °C in 10% CH₄/H₂, external carburization did not occur likely due to high carbon dissolution in the alloy substrate at this temperature. A thermodynamic analysis indicated that 1000 °C was an approximate critical temperature, below which the environment should result in mixed oxidizing/carburizing behavior, while above this temperature reducing carburizing behavior should occur. The experimental results approximately agree with the thermodynamic analysis. Metal dusting was not observed under highly carburizing conditions (a_C>1). The size and morphology of Cr-rich phases (or Cr-carbides) are both temperature- and time-dependent, while the external continuity is more temperature-dependent rather than time-dependent.     

Investigation on the cross sensitivity of NO2 sensors based on In2O3 thin films prepared by sol-gel and vacuum thermal evaporation

In₂O₃ thin films have been prepared from commercially available pure In₂O₃ powders by high vacuum thermal evaporation (HVTE) and from indium iso-propoxide solutions by sol-gel techniques (SG). The films have been deposited on sapphire substrates provided with platinum interdigital sputtered electrodes. The as-deposited HVTE and SG films have been annealed at 500°C for 24 and 1 h, respectively. The film morphology, crystalline phase and chemical composition have been characterised by SEM, glancing angle XRD and XPS techniques. After annealing at 500°C the films’ microstructure turns from amorphous to crystalline with the development of highly crystalline cubic In₂O_3−x (JCPDS card 6-0416). XPS characterisation has revealed the formation of stoichiometric In₂O₃ (HVTE) and nearly stoichiometric In₂O_3−x (SG) after annealing. SEM characterisation has highlighted substantial morphological differences between the SG (highly porous microstructure) and HVTE (denser) films. All the films show the highest sensitivity to NO₂ gas (0.7–7 ppm concentration range), at 250°C working temperature. At this temperature and 0.7 ppm NO₂ the calculated sensitivities (S=R_g/R_a) yield S=10 and S=7 for SG and HVTE, respectively. No cross sensitivity have been found by exposing the In₂O₃ films to CO and CH₄. Negligible H₂O cross has resulted in the 40–80% relative humidity range, as well as to 1 ppm Cl₂ and 10 ppm NO. Only 1000 ppm C₂H₅OH has resulted to have a significant cross to the NO₂ response.     

Effect of preparation conditions on properties of atomic layer deposited TiO2 films in Mo–TiO2–Al stacks

TiO₂ films were grown by atomic layer deposition on Mo electrodes in order to elucidate the dominating conductance mechanism and its dependence on the growth chemistry. TiCl₄ and Ti(OC₂H₅)₄ served as titanium precursors, and H₂O or H₂O₂ as oxygen precursors. The films grown at lower temperatures were amorphous. With increasing growth temperatures the crystallization first started in the TiCl₄–H₂O process. The films grown in this process were clearly leakier compared to the films grown from Ti(OC₂H₅)₄ and H₂O and from Ti(OC₂H₅)₄ and H₂O₂. In the Ti(OC₂H₅)₄-based processes, the application of H₂O₂ instead of H₂O resulted in the films with considerably lowered conductivity, although structural differences in these films were insignificant. Space–charge-limited currents were prevailing in all our amorphous Mo–TiO₂–Al packages. Measurements at different temperatures suggested quite high trap densities likely due to the presence of impurities and structural disorder, while the strong differences in conductivity seemed to be due to different densities of gap states.     

Crystal structure and characterization of [2,5-(CH3O)2C6H3NH3]4P4O12·2H2O

The preparation, crystal structure, TG–DTA analysis and spectroscopy investigation are reported for the 2,5-dimethoxy phenyl ammonium cyclotetraphosphate dihydrate [2,5-(CH₃O)₂C₆H₃NH₃]₄P₄O₁₂·2H₂O. This new compound is triclinic P with unit cell dimensions: a = 7.438(5) Å, b = 11.841(7) Å, c = 12.354(4) Å,  = 96.61(4)°, β = 98.35(4)°, γ = 102.60(6)°, Z = 1 and V = 1038.0(1) Å³. Its crystal structure has been determined and refined to R = 0.049, with 5128 independant reflections. The structure can be described by rows of P₄O₁₂ ring anions along the a axis; between these rows are located the organic groups, connected to them by hydrogen bonds.     

-Fe2O3 thin films prepared by metalorganic deposition (MOD) from Fe(III) 2-ethylhexanoate

-Fe₂O₃ thin films were prepared by metalorganic deposition (MOD) using Fe(III) 2-ethylhexanoate as the metalorganic precursor. A series of experiments were conducted on the metalorganic spin-coated films and their correspondingly annealed samples by employing experimental techniques ranging from thermal gravimetric analysis, Fourier transform infrared spectroscopy (FTIR), X-ray diffraction (XRD) and scanning electron microscopy (SEM) to optical property characterization. In this way a better understanding has been achieved regarding the decomposition process of the metalorganic precursor, the solid state -Fe₂O₃ film formation and crystallization process, and the relationship between the structure and the optical properties of the prepared films. The conclusions of our experiments are the following. The decomposition of Fe(III) 2-ethylhexanoate is a multistep process that is characterized by distinct transition temperatures and thermogravimetric loss rates. Amorphous -Fe₂O₃ film is formed at an annealing temperature of around 460°C, further annealing at higher temperatures induces the amorphous-to-crystalline phase transition and grain growth. FTIR, XRD and SEM data for structural characterization are correlated and in good agreement. A new FTIR absorption band, peaking at 1085 cm^-1, is assigned to the vibration of crystalline Fe-O mode, therefore this peak is useful in monitoring the amorphous-to-crystalline phase transition of -Fe₂O₃ material. Instead of columnar structure in physical vapour deposition-prepared films a granular structure is typical of MOD prepared films, the grain size is much larger near the surface of the film than near the substrate. Optical characterization shows that the refractive index and extinction coefficient of the -Fe₂O₃ thin films increase with the increase of annealing temperatures. The potential interesting applications of the MOD-prepared -Fe₂O₃ thin films include gas sensor materials, photoelectrodes and storage media.     

可磁分离ZnFe2O4-TiO2/还原氧化石墨烯复合材料的制备及光催化性能

以TiO2(P25)、 Fe(NO3)3·9H2O、 Zn(NO3)2·6H2O和氧化石墨烯(GO)为原料,通过一步溶剂热法合成可磁分离的ZnFe2O4-TiO2/还原氧化石墨烯(rGO)复合材料。采用UV-Vis、 Raman、 XRD、 SEM和EDS对ZnFe2O4-TiO2/rGO复合材料进行表征,并研究不同rGO比例的ZnFe2O4-TiO2/rGO对模拟染料废水亚甲基蓝(MB)的光催化降解性能。GO在溶剂热反应过程中,被还原成rGO。由于ZnFe2O4和rGO的加入,不仅使ZnFe2O4-TiO2/rGO实现对可见光的吸收,而且使其具有磁性,便于分离和回收利用。当GO质量分数为5wt%时, ZnFe2O4-TiO2/rGO显现出对MB最佳的光催化活性, 60 min光照后的降解率达到99.1%。通过光催化活性物种捕获实验得出ZnFe2O4-TiO2/rGO复合材料降解MB的过程中,活性物种主要为·OH和·O2-, TiO2导带(CB)中的光生电子(e+)转移到ZnFe2O4的价带(VB),遵循Z型转移机制。光催化剂稳定性实验表明, ZnFe2O4-TiO2/rGO复合材料具有优越的稳定性,可作为太阳光照射下降解有机染料的光催化剂。     

Characterization of indium zinc oxide thin films prepared by pulsed laser deposition using a Zn3In2O6 target

Using a Zn₃In₂O₆ target, indium-zinc oxide films were prepared by pulsed laser deposition. The influence of the substrate deposition temperature and the oxygen pressure on the structure, optical and electrical properties were studied. Crystalline films are obtained for substrate temperatures above 200°C. At the optimum substrate deposition temperature of 500°C and the optimum oxygen pressure of 10⁻³ mbar, both conditions that indeed lead to the highest conductivity, Zn₃In₂O₆ films exhibit a transparency of 85% in the visible region and a conductivity of 1000 S/cm. Depositions carried out in oxygen and reducing gas, 93% Ar/7% H₂, result in large discrepancies between the target stoichiometry and the film composition. The Zn/In (at.%) ratio of 1.5 is only preserved for oxygen pressures of 10⁻²–10⁻³ mbar and a 93% Ar/7% H₂ pressure of 10⁻² mbar. The optical properties are basically not affected by the type of atmosphere used during the film deposition, unlike the conductivity which significantly increases from 80 to 1400 S/cm for a film deposited in 10⁻² mbar of O₂ and in 93% Ar/7% H₂, respectively.     

Using computational approaches to model hematite surfaces

Oxide surfaces are very important in many areas of science and technology. The development of both new experimental surface techniques and theoretical approaches, has allowed a better understanding of metal oxide surfaces. In this work, a forcefield-based method is applied to the calculation of some properties of the -Fe₂O₃(0 0 1) and (0 1 2) surfaces, with the aim to obtain equilibrium structures (relaxed atomic positions of surface atoms) and some data on the energetics of the adsorption of H₂O and SO₂ molecules on these surfaces.     

Sensitivity enhancement for H2 gas detection using a SnO2–Ag2O–PdOx nanocrystalline system

Thick film H₂ sensors were fabricated using SnO₂ loaded with Ag₂O and PdO_x. The composition that gave highest sensitivity for H₂ was in the wt.% ratio of SnO₂:Ag₂O:PdO_x as 93:5:2. The nano-crystalline powders of SnO₂–Ag₂O–PdO_x composites synthesized by sol–gel method were screen printed on alumina substrates. Fabricated sensors were tested against gases like H₂, CH₄, C₃H₈, C₂H₅OH and SO₂. The composite material was found sensitive against H₂ at the working temperature 125 °C, with minor interference of other gases. H₂ gas as low as 100 ppm can be detected by the present fabricated sensors. It was found that the sensors based on SnO₂–Ag₂O–PdO_x nanocrystalline system exhibited high performance, high selectivity and very short response time to H₂ at ppm level. These characteristics make the sensor to be a promising candidate for detecting low concentrations of H₂.     

Preparation of nanocrystalline SnO2 thin film coated Al2O3 ultrafine particles by fluidized chemical vapor deposition

Fluidized chemical vapor deposition (FCVD) technology was developed for coating SnO₂ thin film on Al₂O₃ ultrafine particles. TEM and HREM analysis found that SnO₂ films with different structures were deposited by controlling the coating temperature, reactant concentration, etc. Nanocrystalline SnO₂ film was coated at 573.15 K by gas phase reaction of SnCl₄ with H₂O. EPMA and EDS studies indicated that the distribution of SnO₂ inner and outer of the agglomerates was uniform. Nucleation and film deposition were coexisted mechanism during the FCVD coating process. The fraction of SnO₂ in the composite particles increased with increasing coating temperature, SnCl₄ concentration, and coating time. The mass fraction of SnO₂ in the composite particles increased strongly with the ratio of P_H2O and P_SnCl4 at low mole ratio of H₂O with SnCl₄, but increased little under the conditions of excess H₂O with respect to SnCl₄.     

Al2O3-SiO2复合气凝胶的制备及改性剂对其结构与隔热性能的影响

以AlCl₃·6H₂O为前驱体,采用离子交换工艺和溶胶-凝胶法,在正硅酸四乙酯（TEOS）乙醇溶液中浸泡实现Al₂O₃和SiO₂的复合,经表面改性和常温常压干燥制备出低成本、无杂质离子、低热导率的Al₂O₃-SiO₂复合气凝胶。探索了不同有机硅烷改性剂对Al₂O₃-SiO₂复合气凝胶结构和隔热性能的影响。结果表明,在改性剂为三甲氧基甲基硅烷（MTMS）,改性环境为中性（pH为7）时,Al₂O₃-SiO₂复合气凝胶表现出最均匀的微观结构,SiO₂和Al₂O₃主要以无定形形式存在。MTMS可有效减少Al₂O₃-SiO₂湿凝胶表面的-OH基团,形成Si-O-Si和Al-O-Si基团。Al₂O₃-SiO₂气凝胶比表面积和孔体积分别达到574 m2/g和2.3 cm3/g,热导率低至0.029 W（m·K）-1。以上研究为促进气凝胶材料在隔热领域的应用提供了支持。      

Formation of MgAl2O4 in Al2O3-(Al-4wt.%Mg) composites

The Al₂O₃ particles are introduced into the Al-4wt.%Mg melt by the “vortex” method. After being cast, Al₂O₃-(Al-4wt.%Mg) composites are remelted at 700, 750, 800 and 850°C for different residence times to investigate the formation of MgAl₂O₄ (spinel).

The results show that MgAl₂O₄ is the unique interface of the Al₂O₃-(Al---Mg) composites held at 700–850°C. Fine MgAl₂O₄ crystals grow on the surface of the Al₂O₃ particle but, as the holding temperature and the residence time increase, some spinels will form themselves into pyramidal shape. The MgAl₂O₄ grows not only at the matrix-particle interface but also on the surface of the composite specimens. The formation reactions of interfacial MgAl₂O₄ are as follows: Mg(1) + 2Al(1) + 2O₂(g) = MgAl₂O₄(s)3Mg(1) + 4Al₂O₃(s) = 3MgAl₂O₄(s) + 2Al(1) Both of them are equally important.     

A study of molecular correlations observed in the small-angle photon scattering distributions of 60 keV photons interacting with low-atomic-number media

A variant of the multisection filter and annular target geometry, with a designed angular acceptance of ±0.5°, has been utilised in measuring accurate. O(5%), absolute total differential scattering cross sections of 60 keV photons for H₂O, methyl methacrylate (C₅H₈O₂)_n and nylon-6 (C₁₂H₂₂O₃N₂)_n in the angular scattering range of 2°–10°. The effects of molecular correlations manifest, to varying degree, in strong forward peaking of the scattered photon distribution. Comparison is made with available experiment and theory.     

Bi2O3-Bi2WO6 直接Z-scheme异质结的制备、表征及光催化还原U(VI)的性能

根据能带理论,以Bi(NO₃)₃·5H₂O为铋源,采用水热煅烧法制备了Bi₂O₃-Bi₂WO₆复合光催化材料,SEM、XRD、XPS、紫外可见漫反射(UV-vis DRS)、电化学阻抗(EIS)等表征手段对材料进行表征与分析,以U(VI)为目标污染物,在可见光下进行光催化还原U(VI)的性能研究。结果表明:与纯Bi₂WO₆相比,Bi₂O₃-Bi₂WO₆复合材料具有较高的光催化活性,当Bi₂O₃与Bi₂WO₆的摩尔比为2.4∶1时,Bi₂O₃-Bi₂WO₆的光催化活性最好,光催化活性增强归因于Bi₂O₃的加入,在Bi₂O₃与Bi₂WO₆界面形成的直接Z-scheme异质结,提高了光生电子-空穴的传输速率,降低了其复合率;另一方面,Bi₂O₃的加入使Bi₂WO₆带隙变小,扩大对可见光的响应范围,从而提高了Bi₂O₃-Bi₂WO₆光催化剂的活性。本研究为设计和合成具有高可见光活性的光催化剂和了解增强U(VI)光催化还原机理提供了新的思路。      

固相化学法制备纳米Ce0.75Zr0.25O2粉体的表征及应用（英文）

以Ce2(CO)3,ZrOCl2.8 H2O和H2C2O4.2 H2O为原料,第一次成功地采用了机械力活化固相化学法制备纳米Ce0.75Zr0.25O2粉体。以XRD、TEM分析及XPS等测试手段对Ce0.75Zr0.25O2粉体的结构和形貌进行了表征,结果表明,产物为单一立方相的球形粉体,平均粒径小于20nm,比表面积为85.4m2/g。通过TG-DTA分析,对合成过程中可能发生的化学反应机理进行了分析。对Ce0.75Zr0.25O2氧化物固溶体在三效催化剂中的活性进行了评价。     

Fabrication of a depletion mode GaAs MOSFET using Al2O3 as a gate insulator through the selective wet oxidation of AlAs

A 1 μm thick undoped GaAs buffer layer, a 1500 Å thick n-type GaAs layer, an undoped 500 Å thick AlAs layer and a 50 Å thick GaAs cap layer were consecutively grown by molecular beam epitaxy (MBE) on a [100] oriented semi-insulating GaAs substrate. The AlAs layer was oxidized in a N₂ bubbled H₂O vapor ambient at 400°C for 3 h and fully converted to Al₂O₃ for use as a gate insulator. The I–V characteristics, having a maximum drain current of 10.6 mA, a current cut-off voltage of −4.5 V and a maximum transconductance value of 11.25 mS/mm, indicate that the selective wet thermal oxidation of AlAs/GaAs was successful in producing a depletion mode GaAs MOSFET.