单向耦合VCSEL偏振模的同步与编码

为了研究单向耦合垂直腔面发射激光器系统的混沌动力学及其在通信中的应用,采用数值仿真的方法,理论研究了两个单向耦合的垂直腔面发射激光器偏振模的同步特性,并通过对发射激光器偏振态相位的调制实现了该系统的编码。结果表明,主激光器和从激光器相应模式间可以获得高性能的同步,而且存在两个明显的同步区域——完全同步和注入锁定同步。加载的数字信息也可以在从激光器每个偏振分量中还原,这表明可以利用单模或多横模垂直腔面发射激光器进行多信道混沌通信。     

可变偏振光注入垂直腔面发射激光器的频率诱导偏振双稳

为了探索垂直腔面发射激光器偏振敏感的双稳演 化规律,进一步拓展其在光信息处理领域方面的应 用,本文采用自旋反转模型,数值研究了可变偏振光注入下1 550 nm垂直腔面发射激光器频率诱导偏振双 稳的特性。研究结果表明:在可变偏振角度光注入下,通过沿不同路径扫描频率失谐,垂直 腔面发射激光 器的两个正交偏振分量可在负失谐和正失谐区域产生频率诱导的偏振双稳。对于一确定的注 入强度,注入 光偏振角度的增加可导致负失谐区域的偏振双稳宽度逐渐扩展,而正失谐区域双稳宽度无明 显的变化;给 定适当的注入光角度,较大的注入强度更易于在负失谐区域展宽偏振双稳宽度。此外,在注 入光偏振角度 和注入强度均一定时,不同偏置电流情况下激光器偏振分量的频率诱导双稳宽度存在较大差 异,系统可以 通过合理地调节注入光偏振角以及偏置电流等参量实现对频率诱导偏振双稳的灵活控制。     

长波长垂直腔面发射激光器开关及双稳特性

为了研究垂直腔面发射激光器偏振转换特性,基于自旋反转模型,数值研究了正交光注入下1550nm垂直腔面发射激光器频率诱导偏振开关及双稳特性。结果表明,在正交光注入下,连续改变注入光与激光器光场内x线性极化模的频率失谐可诱导产生两类偏振开关和偏振双稳现象,且注入光强与偏振电流的变化都显著影响双稳宽度和激光器的输出特性;合理选择操作条件,可实现对1550nm垂直腔面发射激光器频率诱导偏振开关及双稳的控制。这一结果对垂直腔面发射激光器在全光开关和全光存储等领域的应用具有参考价值。     

垂直腔面发射激光器的特性分析

垂直腔面发射激光器作为近凰年来光电子学领域研究的热点课题之一，要想很好的研究其应用价值，就必须了解它的各种特性。本文分析总结了垂直腔面发射激光器的阈值特性、光输出特性、模式特性、调制特性、偏振特性、远场特性以及热阻效应。     

外加电场下垂直腔面发射激光器的偏振转换电流

电光效应双折射可以控制垂直腔面发射激光器的偏振特性。本文计算了作用在垂直腔面发射激光器（VCSEL）的上面的分布格反射镜（DBR）上的外加电场产生的双折射,并在此基础上通过对自旋反转模型（SFM）的修正,得到面发射激光器在外加电场存在时的偏振转换电流。     

垂直腔面发射激光器DBR的优化设计

模拟分析了垂直腔面发射激光器分布布拉格反射镜铝组分不同分布对价带的影响,并对两种不同结构的器件进行了测试,测试结果表明抛物线渐变结构可以有效降低价带的势垒,进而可以改善垂直腔面发射激光器的电流热效应,为实现室温连续工作打下基础。     

二维光子晶体对面发射激光器横模控制研究

垂直腔面发射激光器的单模输出特性在光网络数据传输光互连、光存储和激光打印中有重要的应用.传统的氧化限制型垂直腔面发射半导体激光器由于串联电阻大、发热严重而很难工作在单模状态.二维光子晶体结构可以有效地控制垂直腔面发射激光器的横向模式,使器件工作在单模状态下.从理论上系统研究了光子晶体垂直腔面发射半导体激光器的单模条件,成功设计了一组单模光子晶体垂直腔面发射半导体激光器,并通过常规工艺制作出功率0.6 mW、边模抑制比大于30 dB、阈值电流4 mA、远场发散角8.4°、不受电流注入影响的单模光子晶体垂直腔面发射半导体激光器.实验证明:光子晶体可有效地进行横模控制.     

垂直腔面发射激光器温度特性的研究

借助于SV232低温恒温器及LD2002C5 VCSEL测试系统,对内腔接触式氧化物限制型垂直腔面发射激光器进行了变温实验研究,测得在- 10℃～70℃温度范围内,器件输出光功率、电压、斜率效率、发射波长和阈值电流随温度变化的实验曲线,并结合不同温度下VCSEL反射谱和增益谱的模拟结果,对实验曲线进行了很好的分析和解释。估算了连续工作状态下研制的InGaAs/GaAs垂直腔面发射激光器内部温升值,而且还得到了现有工艺条件下满足最低室温工作阈值的谐振腔谐振波长与增益谱峰值波长。     

垂直腔面发射激光器特性测试系统与应用研究

根据垂直腔面发射激光器(VCSEL)的工作特性,设计了一种新型的易于实验室普及使用的VCSEL特性测试系统,文中详细介绍了该测试系统的组成,包括VCSEL的驱动电源--锯齿波稳流电源、光电检测电路和图象显示及数据传输系统等,并对垂直腔面发射激光器(VCSEL)的工作特性进行测试,得到了相关测试曲线.研究表明,该系统使用方便,成本适中,有一定应用价值.     

液晶可调谐VCSEL中高对比光栅结构的设计

基于严格耦合波理论设计了一种以液晶为低折射率材料的Si-SiO2复合高对比光栅,该光栅适合用于实现液晶可调谐功能的垂直腔面发射半导体激光器件。当940nm的TM偏振光入射时,通过优化参数可得到宽带(Δλ=256nm)高反射率(R>99%)且具有偏振稳定性的光栅结构,满足垂直腔面发射半导体激光器顶部腔面反射镜要求。液晶折射率的改变不会影响光栅的性能,未来有望将高对比光栅或混合光栅与液晶可调谐垂直腔面发射半导体激光器相结合,实现可调谐半导体激光器。     

Polarization selection in VCSELs due to current carrier heating

The problem of polarization switching of light from a vertical cavity surface emitting laser (VCSEL) is discussed. It is shown that heating of holes in the p-type distributed Bragg reflector and of electrons and holes in the quantum wells of the active region lead to switching of the polarization of the VCSEL. The model developed here makes it possible to explain the results of experiments on switching of the polarization of VCSELs at fixed active region temperatures. Fiz. Tekh. Poluprovodn. 33, 887–893 (July 1999)     

表面光栅垂直腔面发射激光器偏振特性研究

研究了表面光栅结构对垂直腔面发射激光器(VCSEL)的偏振控制作用。引入表面光栅后,对不同刻蚀深度下的偏振相关的镜面损耗进行了仿真,结果表明表面光栅刻蚀深度在44~130 nm范围内均可实现稳定偏振,具有较大的工艺容差。表面光栅VCSEL在基横模工作状态下偏振抑制比(Orthogonal Polarization Suppression Ratio, OPSR)超过20 dB,偏振光谱峰间偏振抑制比达到40 dB,且在多横模状态也实现了有效的偏振控制。为了进一步验证光栅对偏振控制的效果,制作了方向互相垂直的两种表面光栅,具有这两种方向光栅的VCSEL的OPSR均达20 dB以上。测试分析表明表面光栅是VCSEL实现稳定偏振的一种有效手段。     

Blue lasing at room temperature in an optically pumped lattice-matched AlInN=GaN VCSEL structure

Laser action with low threshold average pump power density (~50 W - cm^-2 ) at room temperature is reported for a crack-free planar vertical cavity surface emitting laser (VCSEL) structure based on a bottom lattice-matched AllnN/GaN distributed Bragg reflector (DBR) and a top dielectric DBR. The cavity region, formed by n- and p-type GaN layers surrounding only three InGaN/GaN quantum wells, corresponds to a typical active region suitable for an electrically driven VCSEL. In addition to low threshold, a spontaneous emission coupling factor beta ~ 2 x 10^-10 is derived for this ready-to-be-processed laser structure.     

Multiple-input optical control of vertical cavity surface emitting lasers using intracavity-coupled in-plane lasers

We report new experimental results demonstrating optical bistability and two-input NOR gate operation in intracavity-coupled in-plane and vertical cavity surface emitting lasers (VCSELs) fabricated from the same epitaxial material. The VCSEL (or output) section gain is controlled by separately biased in-plane laser section(s), and depending on the in-plane power output, complete quenching of stimulated emission in the VCSEL is observed. Hysteresis is present in the VCSEL output power versus in-plane laser input power characteristic, and an optical memory effect is observed in the combined device.     

VCSEL polarization modulation for pulse-per-second clock signal transfer in optical frequency distribution systems

In this paper, a novel vertical cavity surface emitting laser (VCSEL) polarization modulation technique based on polarization switching due to thermal heating in a single transverse mode class 10 G VCSEL at 1 310 nm is demonstrated experimentally. The inherent orthogonal polarization switching of the VCSEL carrier with changing bias is exploited in the transmission of pulse-per-second (PPS) timing clock signal. Experimental results show that PPS pulse widths of 9.97 μs and 9.98 μs are measured for back-to-back analysis and over 3.21 km of G 652 urban fibre transmission, respectively. This work provides a novel alternative for adoption in optical frequency and time transfer applications.     

Compact 1.55 /spl mu/m room-temperature optically pumped VCSEL using photonic crystal mirror

Reported is the first realisation of a novel vertical cavity surface emitting laser (VCSEL), in which one of the Bragg mirrors is entirely replaced by a single-layer photonic crystal mirror (PCM). The presence of the PCM considerably enhances the vertical compactness of the device. Room-temperature singlemode laser emission has been obtained at 1.55 mum by optical pumping (pulsed regime), with a threshold power around 15 mW     

Compact VCSEL module with butt-coupled fibre for efficientmodelocking

A novel compact modelocking source using an electrically pumped vertical cavity surface emitting laser (VCSEL) with an external fibre optic resonator is presented. CW threshold current of the modelocking configuration is as low as 1.7 mA. The output pulse width is 24 ps and the timing jitter of the pulses remains below 1 ps     

Chirp and linewidth enhancement factor of tunable, optically-pumped long wavelength VCSEL

Small-signal frequency modulation response and chirp characteristics of a tunable, optically-pumped 1.6 /spl mu/m vertical cavity surface emitting laser (VCSEL) based on microelectromechanical at wavelength tuning are presented for the first time. From the measurements the linewidth enhancement factor /spl alpha//sub H/ has been derived and is discussed.     

高铝Al_xGa_(1-x)As氧化层对垂直腔面发射激光器的影响

针对可见光垂直腔面发射激光器的制备 ,通过湿氮氧化实验和测量微区光致发光谱分别研究了高铝组分Alx Ga1 - x As的氧化特性及氧化产物的收缩应力对有源区的影响 ,结合器件结构设计确定了氧化限制层 Alx Ga1 - x-As的铝组分和最佳位置 ,并制备出了低阈值电流的 Al Ga In P系垂直腔面发射激光器