Silicon heat pipes used as thermal spreaders

An increase in power densities in electronic devices is a direct consequence of their miniaturization and performance improvements. We propose the use of flat miniature heat pipes with micro capillary grooves to spread heat flux across a heat sink. Models of the structure were developed to calculate heat transfer limitations and temperature drops. A brass/water prototype was fabricated to demonstrate the feasibility of heat spreading using this type of heat pipe. Simulation and experimental results obtained with the prototype are described. The dissipated power reached 110 W/cm/sup 2/ without heat transfer limitations. The results are then extended to the design of this type of heat pipe in silicon. Thermal performance was calculated. Simulation, experimental results and the fabrication process are presented.     

微热管在电子器件冷却中的应用

电子器件冷却问题是电子器件热设计中的一个关键问题.简单介绍了几种目前最新颖的微热管在高热流密度电子器件冷却中的应用,包括平板热管、圆棒热管和电流体动力热管.并对某些前沿的研究现状进行概述,指出了下一步的研究趋势,希望能引起国内同行的关注.     

Measurements of statistical burst-noise characteristics

In a previous letter, a dislocation model of planar-silicon-transistor burst noise was proposed. The burst statistical parameters have been measured and their dependence on bias is in good agreement with the model.     

Advanced cooling system using miniature heat pipes in mobile PC

This paper describes various cooling solutions using heat pipes for cooling a notebook PC. These are: 1) heat pipe with heat spreader plate; 2) hybrid system-i.e., heat pipe with heat sink and fan; and 3) hinged heat pipe system. For heat input of less than 12 W, the thermal resistance measured between the surface of the CPU to ambient was obtained as follows: greater than 8°C/W for system 1) and 4-6°C/W for systems 2) and 3). For the CPU having specification of surface temperature of 95°C and 40°C ambient, then system 1) can be dissipated by about 6 W, whereas systems 2) and 3) can handle 13 W. Experimental results of these three systems are included and discussed in this paper     

Innovative wick design for multi-source, flat plate heat pipes

We present a novel micro-heat pipe wick design and fabrication technique to significantly boost the effective thermal conductivity of the heat pipe relative to the monolithic substrate material. Extensive porous flow modeling of the process has provided critical information on the key parameters and the resulting anisotropic wick designs have shown robust performance improvements. A methanol charged copper device reported in this paper showed a maximum thermal conductivity of 760 W/m K prior to dry out. This represents a 1.9× increase over the conductivity of solid copper.     

Experimental study on the performance of miniature heat pipes withwoven-wire wick

The thermal density of electronic system has been increased continuously because high speed and high density are required for them. The heat dissipation of CPU for a notebook PC has been recently increased to be more than 10 W, but, on the other hand, the available packaging space has been decreased. Therefore, it has become inevitable to perform cooling by using miniature heat pipes (MHPs). In the present study, a new woven-wire-type wick for the MHP is developed, which has a large capillary limit and a high productivity. These MHPs with diameters of 3 mm or 4 mm are applicable to small-sized electronic parts such as CPU of a notebook PC. Because the operational characteristics of MHPs with the diameters of 3 mm or 4 mm are different from those of general medium-size heat pipes, performance tests have been conducted in order to review heat-transfer characteristics and effects of various factors on the performance of MHPs. The design factors under consideration are fill ratio of working fluid, length of heat pipe, length of evaporator and condenser, inclination angle of installation, number of wick strand and thermal load     

U- and L-shaped heat pipes heat sinks for cooling electronic components employed a least square smoothing method

Heat pipes-heat sink modules transfer heat from a heat source to the heat pipes, and then to the heat sink and out into the surrounding ambient, and are suitable for cooling electronic components through a forced convection mechanism. The configuration and thermal performance of the heat sinks with inserted heat pipes were studied in the present paper. This article uses experimental procedures to investigate the thermal performance of two embedded U-shaped heat pipe and six embedded L-shaped heat pipe thermal modules with different fan speeds and heat source areas. And via the superposition method and least-square estimators in experimental data, the performance curves of individual U- and L-shaped heat pipes were derived and predicted. Results show that the lowest thermal resistances of U- and L-shaped heat pipe-heat sinks are respectively 0.246 °C/W and 0.166 °C/W given dual fans operating at 3000RPM and 30 × 30 mm² heat sources. Results for a single U-shaped heat pipe are 0.04 °C/W at 78.85 W, while sequential results for L-shaped heat pipes are 1.04 °C/W, 2.07 °C/W, 2.76 °C/W, 2.19 °C/W and 1.7 °C/W between 34 W and 40 W.     

Generation-recombination transient effects in partially depletedSOI transistors: systematic experiments and simulations

A synthesis of the most frequent transient phenomena due to floating-body effects in partially depleted SOI MOSFET's is presented. The dominant physical mechanisms are examined through a variety of experiments. Comprehensive models which predict the transient effects are included in SOISPICE. Simulated transients involving both generation and recombination are fully validated by the experiments and are shown to he useful for reliable carrier lifetime extraction as well as SOI circuit simulation     

Large signal and transient characteristics of electrochemical amplifiers

Electrochemical cells in which the concentration of an ionic species in a chamber can be varied by means of an applied electrical signal constitute low-frequency analogs of the junction transistor. The analogy is pursued here by deriving equivalent circuits for such cells under large signal dc and transient conditions. In one sense the electrochemical cell may be regarded as a "perfect" semiconductor (no recombination of charge carriers). Therefore, parallels are noted to transistor equivalent circuits, particularly the charge control model, and equivalent switching-time equations are derived. Experimental data is compared to predicted results, and an electrochemical version of the Eccles-Jordan flip-flop is presented.     

Performance analysis of heat pipe aided NEPCM heat sink for transient electronic cooling

An experimental investigation on the thermal performance of Nano Embedded Phase Change Material (NEPCM) heat sink with heat pipe has been conducted for electronic cooling in Personal computers. The NEPCM and heat pipe configuration in the heat sink effectively eliminates the use of electronic fan. A flat plate heater was used to simulate the computer's microprocessor. The heat sink configurations were placed above the flat plate heater and tested for multiple head load conditions. The addition of NEPCM increases the heat storage capacity, causes a delay effect on the sensible temperature rise and maintained the core temperature of the heat sink at room temperature for prolonged time. Heat pipe charged with R134a refrigerant placed inside the heat sink cavity for regeneration of NEPCM in heat sink. The results showed that use of heat pipe aided NEPCM heat sink caused a 3 °C decrease in the heater's surface plate temperature during six hours of the operating period without the help of electronic fan or any other forced convection.     

熔断电阻器瞬态特性仿真分析

为了简单有效地改进熔断电阻器的性能,采用有限元分析软件ANSYS建立了熔断电阻器的模型,对其在过电流状态下的瞬态温度场变化过程进行了数值模拟,并进行了实验验证。通过对熔断电阻器的热电耦合模拟,得到了不同电流下的熔断时间和温度分布云图。熔断时间的实验结果和模拟结果误差率为5%左右,这为熔断电阻器的设计和生产提供了方法和理论依据。     

固体激光器新型冷却热沉的设计和CFD数值研究

为固体激光器设计了一种新型内部结构扰流柱结构的冷却热沉,采用计算流体力学（CFD）方法对此水冷热沉的三种典型设计方案以及传统的空腔结构和等截面小通道结构热沉分别进行了数值模拟,据此研究了冷却水流量对各种方案的增益介质最高温度、冷却面温度分布以及热沉的压力损失等特性的影响。在相同传热量和相同冷却水流量前提下,等截面小通道热沉和扰流柱热沉的传热特性都明显优于空腔结构热沉。与等截面小通道水冷热沉相比较,扰流柱热沉传热热阻更小,而流动压力损失较大。数值模拟结果表明扰流柱热沉传热性能优于传统的两种热沉（空腔结构和等截面小通道结构）设计方案,具有更好的冷却效果。在较高流量下工作时,扰流柱热沉传热性能略优于等截面小通道热沉,在较低流量下工作时则显著优于等截面小通道热沉。     

三角形天线瞬态响应特性的模拟与改进

利用时域有限差分方法(FDTD)对三角形天线的瞬态响应特性进行了分析,通过改变天线形状以及在天线表面开槽来改善天线的辐射特性的方法,设计了一种在表面开槽的扇形天线,该天线可以有效地减少天线在远场辐射的电(磁)场随时间变化波形尾部的震荡.     

Micro heat pipes in low temperature cofire ceramic (LTCC) substrates

With projected power densities above 100 W/cm/sup 2/ for devices, new methods for thermal management from the heat generation at the die to heat removal to the ambient must be addressed. By integrating micro heat pipes directly within the ceramic substrate, effective thermal conductivity for spreading heat in both radial and axial directions was achieved. New materials and processes were developed to fabricate the unique components required to handle high thermal loads. Enhanced thermal vias to minimize the thermal impedance through the ceramic in the evaporator and condenser sections were developed, increasing the effective thermal conductivity from 2.63 to near 250 W/m-/spl deg/C. The use of an organic insert fabricated into the desired complex shape using rapid prototyping methods, coupled with the viscoelastic flow of the low temperature cofire ceramic (LTCC) during lamination, allowed complex shapes to be developed while ensuring uniform green tape density during lamination prior to tape firing. Large cavities, three-dimensional fine structures and porous wicks for capillary 3-D flow have been utilized to fabricate the heat pipes. Heat pipes and spreaders, utilizing water as the working fluid, have been demonstrated operating with power densities in excess of 300 W/cm/sup 2/.     

Design of vertical fin arrays with heat pipes used for high-power light-emitting diodes

As Light-Emitting Diodes (LEDs) are negatively affected by high temperature, the thermal design for them is critical for better light quality, reliability and lifetime. In this work, a thermal design of vertical fin arrays with heat pipes as passive cooling was applied. The heat pipes can supply high thermal conductivity with much less weight and volume compared to copper or aluminum base and consequently less obstruction to air flow with enhanced natural convection. As the natural convection and radiation dominate heat transfer in this case, the optimum vertical fin spacing was calculated by the most used empirical correlations. Then, the design was numerical investigated by Computational Fluid Dynamics (CFD) to obtain best thermal performance. As the fin spacing was both optimized by correlations and modelling, the optimum thermal design achieved. Finally, we manufactured and tested the design experimentally which consistently approved the thermal design compared to correlations and simulation.     

Thermal performance modeling of loop heat pipes with flat evaporator for electronics cooling

This work deals with modeling of the thermal performance of a copper-water loop heat pipe (LHP) with a flat evaporator operating in steady state operation. The model is based on steady-state energy and momentum balance equations for each LHP component. Modeling the heat transfer in the evaporator was particularly considered, and the evaporation heat transfer coefficient is determined from a dimensionless correlation which is developed on the basis of experimental data from literature. The validation of this model consists in comparing the experimental results and those obtained by the model for different cooling temperatures. Finally, a parametric study is presented to show the effects of different key parameters such as the radii and the lengths of the liquid and vapor lines, the length of the condenser, the heat sink temperature and heat transfer coefficient as well as the ambient temperature and the heat losses to the ambient.     

Measurements and modeling of MOSFET I-V characteristics withpolysilicon depletion effect

The authors study the degradation of MOSFET current-voltage (V-I) characteristics as a function of polysilicon gate concentration (N_p ), oxide thickness (t_ox) and substrate impurity concentration (N_D) using measured and modeled results. Experimentally it is found that for MOSFETs with thin gate oxide (t_ox≈70 Å) and high substrate concentration (N_D ≈1.6×10¹⁷ cm^-3) the reduction in the drain current I_DS can be as large as 10% to 20% for devices with insufficiently doped polysilicon gate (5×10¹⁸ ⩽N_p⩽1.6×10¹⁹ cm^-3). Theoretically it is shown that the drain current degradation becomes more pronounced as N_p decreases, t_ox decreases, or N_D, increases. A modified Pao-Sah model that takes into account the polysilicon depletion effect and an accurate gate-field-dependent mobility model are used to compute I-V characteristics for various values of N_p, t_ox, and N_D. Good agreement between experimental and modeled results is observed over a wide range of devices