低分子聚硅氮烷（LPSZ）／二乙烯基苯（DVB）的交联及其对裂解产物的影响

研究了ＬＰＳＺ／ＤＶＢ的交联反应及其对裂解物的影响。实验表明：其交联反应以加成和缩合反应的两种方式同时进行。加成反应的温度为１５０℃左右，部分加成反应的结果使其交联裂解产物的孔洞尺寸减小，裂解产物的裂解产率提高。裂解产物主要由非晶态Ｓｉ３Ｎ４和β－ＳｉＣ组成，还有少量ＳｉＯ２和游离Ｃ，加入ＤＶＢ后，其游离Ｃ含量增加。     

含活性基团硅氮烷先驱体的裂解

用ＴＧ－ＧＣ，ＩＲ，元素分析，ＸＲＤ研究ＭｅＳｉＨＣｌ２与ＭｅＳｉＶｉ（Ｖｉ：－ＣＨ＝ＣＨ２）Ｃｌ２共氨解产物的裂解过程。     

Si3N4薄膜的DC—PCVD沉积工艺及结构

用不附加另外电源的ＤＣ－ＰＣＶＤ装置沉积Ｓｉ３Ｎ４薄膜，，ＸＲＤ ＴＥＭ检查出这种Ｓｉ３Ｎ４是非晶态、ＩＲ，ＡＥＳ验证这种薄膜的主要成分是Ｓｉ３Ｎ４、ＴＥＭ与ＯＭ研究 薄膜组织结构。     

等温退火Fe73.5Cu1Mo3Si13.5B9合金的纳米晶结构及其与起…

本文用ＸＲＤ和ＴＥＭ研究了Ｆｅ７３．５Ｃｕ１Ｍｏ３Ｓｉ１３．５Ｂ９非晶合金在５２０℃２０－１２０ｍｉｎ退火后形成的纳米晶结构。结果表明，晶化相为局部具有ＤＯ３超结构的α－Ｆｅ（Ｓｉ），尺寸约为１４ｎｍ，α－Ｆｅ（Ｓｉ）晶粒由ＤＯ３有序区和序区组成。随退火时间的延长，α－Ｆｅ（Ｓｉ）的体积分数，Ｓｉ含量及ＤＯ３有序区尺寸增加。在退火时间为６０ｍｉｎ时，残余非晶相处于一特殊结构状态。α－Ｆｅ（Ｓｉ）相     

等温退火Fe_（73．5）Cu_1Mo_3Si_（13．5）B_9合金的纳米晶结

本文用ＸＲＤ和ＴＥＭ研究了Ｆｅ_（７３．５）Ｃｕ_１Ｍｏ_３Ｓｉ_（１３．５）Ｂ_９非晶合金在５２０℃，２０－１２０ｍｉｎ退火后形成的纳米晶结构。结果表明，晶化相为局部具有ＤＯ_３超结构的α－Ｆｅ（Ｓｉ），尺寸约为１４ｎｍ，α－Ｆｅ（Ｓｉ）晶粒由ＤＯ_３有序区和无序区组成。随退火时间的延长，α－Ｆｅ（Ｓｉ）的体积分数，Ｓｉ含量及ＤＯ３有序区尺寸增加。在退火时间为６０ｍｉｎ时，残余非晶相处于一特殊结构状态。α－Ｆｅ（Ｓｉ）相和残余非晶相结构对合金的起始磁导率均有影响。     

应用带HSV－TK基因的重组腺病毒的肺癌基因治疗的研究

带有单纯疱疹病毒脱氧胸苷激酶基因（ＨＳＶ－ｔｋ）的腺病毒结合ｇａｎｃｉｃｌｏｖｉｒ（ＧＣＶ）对分裂细胞有很强的杀伤作用。本文报道在感染复数（Ｍ．Ｏ．Ｉ,ＭｕｌｔｉＰｌｉｃｉｔｙｏｆＩｎｆｅｃｔｉｏｎ）达到１０００时对人体肺腺癌细胞Ａ５４９的杀伤几乎达到回１００％。四种人体肺癌细胞株（Ａ５４９,ＬＡＸ,ＳＰＣ,ＳＫＹ）对带ＨＳＶ－ｔｋ的腺病毒（ＡＤＶ／ＲＳＶ－ｔＫ）的杀伤作用表现不同的敏感性。另外,Ａｃｙｃｌｏｖｉｒ（ＡＣＶ）和ＧＣＶ对感染了重组腺病毒ＡＤＶ／ＲＳＶ－ｔＫ的细胞都有一定杀伤作用,但杀伤效果有很大差别;就Ａ５４９而言,ＧＣＶ的杀伤作用比ＡＣＶ高７—８倍。此外ＡＤＶ／ＲＳＶ－ｔｋ结合ＧＣＶ杀伤肿瘤细胞时有“旁观者效应”,即感染了ＡＤＶ／ＲＳＶ－ｔｋ的细胞与未感染细胞混合后,后者也明显地遭到杀伤。     

MPCVD法在Si衬底上生成β—C3N4晶态薄膜的研究

以Ｎ２,ＣＨ４作为反应气体,采用微波等离子体化学气相沉积法（ＭＰＣＶＤ）进行碳氮膜的合成研究。通过控制反应温度、气体流量、微波功率、反应气压,在Ｓｉ（１１１）和Ｓｉ（１００）基底上气相合成β－Ｃ３Ｎ４晶态薄膜。扫描电子显微镜（ＳＥＲＭ）下观察到生长在Ｓｉ基底上的薄膜具有六角晶棒的密结构。ＥＤＸ分析胡沉积条件的不同,六角晶棒中Ｎ／Ｃ在１．０～２．０之间。Ｘ射线衍射分析（ＸＲＤ）发现薄膜中含有β－Ｃ３     

溶胶-凝胶法有机-无机精细复合材料P(VDF/TeFE)-SiO_2的制备与显微结构

用溶胶－凝胶法制备了有机－无机精细复合材料Ｐ（ＶＤＦ／ＴｅＦＥ）－ＳｉＯ２。利用水解－聚合反应由正硅酸乙脂（ＴＥＯＳ）合成ＳｉＯ２溶胶，乙醇作溶剂，盐酸作催化剂。将Ｐ（ＶＤＦ／ＴｅＦＥ）溶于丙酮，并与ＳｉＯ２溶胶均匀混合。凝胶后经干燥和热处理得到有机－无机精细复合材料Ｐ（ＶＤＦ／ＴｅＦＥ）－ＳｉＯ２。用红外光谱分析、扫描电镜分析、差示扫描热分析和热失重分析对有机－无机精细复合材料Ｐ（ＶＤＦ／ＴｅＦＥ）－ＳｉＯ２进行了显微结构表征。     

常压MOCVD制备MgO薄膜的研究

本文首次报道用常压金属有机化学气相沉积（ＡＰ－ＭＯＣＶＤ）在Ｓｉ（１００），ＳｉＯ２／Ｓｉ（１００）和Ｐｔ／Ｓｉ（１００）衬底上外延高质量的ＭｇＯ薄膜。研究了衬底温度与薄膜的取向性关系和ＭｇＯ薄膜的潮解特性。高纯ｍａｇｎｅｓｉｕｍａｃｅｔｙｌａｃｅｔｏｎａｔｅ［ｂｉｓ（２，４－ｐｅｎｔａｎｅｔａｎｅ－ｄｉｏｎｏ）ｍａｇｎｅｓｉｕｍ］［Ｍｇ（ＣＨ２ＣＯＣＨ２ＣＯＣＨ３）２］作为金属有机源，扫描电镜（ＳＥＭ），透射电镜（ＴＥＭ）和Ｘ－ＲＡＹ衍射实验显示，在较低的衬底温度（～４８０℃）下一次淀积成单晶膜。薄膜均匀，致密，结晶性和取向性很好，衬底温度（Ｔｓ）在４００℃到６８０℃之间，在Ｓｉ（１００）衬底上生长的ＭｇＯ薄膜都具有［１００］取向，在Ｓｉ（１００）、ＳｉＯ２／Ｓｉ（１００）和Ｐｔ／Ｓｉ（１００）衬底上生长的ＭｇＯ薄膜也都具有［１００］取向。     

Bi_4Ti_3O_（12）铁电薄膜的I－V特性测量及导电机理

Ｂｉ＿４Ｔｉ＿３Ｏ＿（１２）薄膜是一种具有广泛应用前景的典型的铁电薄膜。本文报道了用ＭＯＣＶＤ方法制备的Ｂｉ＿４Ｔｉ＿３Ｏ＿（１２）薄膜的Ｉ－Ｖ特性测量及其导电机理。结果表明，在低场下，Ｂｉ＿４Ｔｉ＿３Ｏ＿（１２）薄膜的Ｉ－Ｖ特性表现为欧姆性质，在中强场下，薄膜的导电机理遵从ＳＣＬＣ理论。     

Insertion of triangulated surfaces into a meccano tetrahedral discretization by means of mesh refinement and optimization procedures

In this paper, we present a new method for inserting several triangulated surfaces into an existing tetrahedral mesh generated by the meccano method. The result is a conformal mesh where each inserted surface is approximated by a set of faces of the final tetrahedral mesh. First, the tetrahedral mesh is refined around the inserted surfaces to capture their geometric features. Second, each immersed surface is approximated by a set of faces from the tetrahedral mesh. Third, following a novel approach, the nodes of the approximated surfaces are mapped to the corresponding immersed surface. Fourth, we untangle and smooth the mesh by optimizing a regularized shape distortion measure for tetrahedral elements in which we move all the nodes of the mesh, restricting the movement of the edge and surface nodes along the corresponding entity they belong to. The refining process allows approximating the immersed surface for any initial meccano tetrahedral mesh. Moreover, the proposed projection method avoids computational expensive geometric projections. Finally, the applied simultaneous untangling and smoothing process delivers a high‐quality mesh and ensures that the immersed surfaces are interpolated. Several examples are presented to assess the properties of the proposed method.     

Certification Institutions Expected to Update and Transfer Information on Present Standards

Standards are the basis for production enterprises to organize production, ex-factory inspection, trade (delivery) and technical exchanges, product certification, quality arbitration and supervision.……     

Flow calorimeter for enthalpy increment measurements on condensed gases

A flow calorimeter for enthalpy increment measurements on condensed gases is presented. A better knowledge of the properties of the liquefied natural gas is needed, and therefore a liquid loop has been designed for our flow calorimeter. The fluid loop in the calorimeter is designed in order to avoid the two-phase region, since two phases would give compositional disturbances in the measurements. The avoidance of the two-phase region is made possible by increasing the pressure of the test fluid after the measurement section, then heating the fluid at super-critical pressure past the critical point. Finally, the fluid is throttled to the low-pressure gas state at the inlet condition of the compressor that circulates the fluid. To perform the pressure increase, a new cryogenic pump has been designed. To evaluate the new equipment, measurements were taken on liquid ethane over the temperature range 146–256 K at pressure between 0.9 and 5.1 MPa.     

Refrigerators Enter a New Era of Health Preservation Frestech initiates the establishment of China's first standard for household sterilization refrigerators

On November 30, 2007, the China Association for Standardization (CAS) held a press conference at Beijing Diaoyutai State Guest House. Leaders from the China Household Electric Appliance Research Institute, the China Household Electric Appliance Association, and the China Consumers' Association attended and made speeches.……     

Optimum-Simulation von Ernteprozessen

Zusammenfassung Bei der Gestaltung von Ernteprozessen — beispielsweise des Prozesses Mähdrusch, Körnertransport und -abnahme — als transportverbundene Fließarbeitsverfahren mit mindestens zwei verschiedenen Arbeitsmitteln gibt es einen großen Optimierungsspielraum. Solche Prozesse sind mehrstufige Bedienungsprozesse mit gemischter Anordnung der Bedienungseinrichtungen. Außerdem besitzen sie stark ausgeprägte räumliche Aspekte. Es wird vor allem gezeigt, welche Merkmale solcher Prozesse in Simulationsmodellen abgebildet sein müssen, welche Zielgrößen in Abhängigkeit von welchen Einflußgrößen unter Berücksichtigung welcher Prozeßbedingungen ermittelt werden sollten und wie der Bewertungsprozeß zur Ermittlung der gewünschten Informationen gestaltet werden muß.     

A study of centrifugal cast high boron high speed steel

In the present study a high‐boron high speed steel (HSS) roll material was designed. Many expensive alloy elements have been substituted by cheap boron alloy, and high‐boron high speed steel roll has been manufactured by centrifugal casting method. The microstructures, mechanical properties and wear resistance of centrifugal casting high‐boron high speed steel roll have been investigated by optical microscopy (OM), scanning electron microscopy (SEM), and X‐ray diffraction (XRD) analysis, hardness test, impact test and wear test. The results indicated that the solidification microstructures of high‐boron high speed steel roll consisted of M₂(B,C), (W,Mo)₂(B,C), M₃(B,C), M₂₃(B,C)₆ type borocarbides and martensite, a small amount of retained austenite. Borocarbides were continuously distributed over the grain boundary. After quenching from 1050 °C, local broken network appeared in partial borocarbides, and fine secondary borocarbide precipitated from the matrix. After tempering from 525 °C, the amount of precipitated borocarbide increased significantly. After heat treatment, the hardness of high‐boron high speed steel roll excelled 60 HRC, and its impact toughness excelled 8.0 J/cm². The single groove steel rolling amount of high‐boron high speed steel rolls increases by 500% than that of bainite cast iron roll, when the rolls are used in K₁ mill housing of bar mill.     

Thixotropy of Systems with Shear Thinning and Plastic Flow Behavior

The definition of the thixotropy is a decrease in viscosity with time in shear and a subsequent recovery of viscosity after the shear deformation is removed.We ...     

Effect of Oxide Assisted Metal Nanoparticles on Microstructure and Morphology of Gallium oxide Nanowires

Several researches have been reported about the characteristic of β-Ga2O3 nanowires which was synthesized on nickel oxide particle. But indeed, recent researches about synthesis of β-Ga2O3 nanowires on oxide-assisted transition metal are limited to nickel or cobalt oxide catalyst. In this work, Gallium oxide (β-Ga2O3 ) nanowires were synthesized by a simple thermal evaporation method from gallium powder in the range of 700 - 1000℃ using the iron, nickel, copper, cobalt and zinc oxide as a catalyst, respectively. The β-Ga2O3 nanowires with single crystalline without defects were successfully synthesized at the reaction temperature of 850, 900 and 950℃ in all the catalysts. But optimum experimental condition in synthesis of nanowires varied with the kind of catalyst. As increasing synthesis temperature,the morphology of gallium oxide nanowires changed from nanowires to nanorods, and its diameter increased. From these results, we could be proposed that the growth mechanism of β-Ga2O3 nanowires was changed with synthesis temperature of nanowires. Microstructure and morphology of Synthesized nanowire was characterized by HR-TEM, FE-SEM, EDX and XRD.     

The Influence of Nitrogen and Boron Implant into Silicon Substrate on the Phase and Internal Stress of c-BN Films

Cubic boron nitride(c-BN) film was deposited on a Si (100) substrate by the RF-magnetron sputtering.The mainly problems for fabrication of c-BN films are the low purity and high intrinsic compressive stress. In order to solve the two problems, the c-BN film with the buffer interlayer was deposited on the substrate which had been implanted with nitrogen and/or boron ions. The results show: the implantation of nitrogen ions can obviously increase c-BN content and reduce the internal stress slightly; while the implantation of boron shows no obvious improvement to the content of c-BN, which can reduce the internal stress in the film obviously. In addition, it is suggested that the implantation of nitrogen and boron shows the best result, which not only can increase the content of c-BN, but also reduce the internal stress in the c-BN film obviously.