等离子体聚合掺有苯环的超薄有机硅膜

用化学气相沉积方法制备了超薄有机硅膜，研究了等离子体聚合工艺过程中，工艺条件对膜的特性和沉积速率的影响，结果表明：沉积掺有苯环 有机硅膜增强了强度和耐腐蚀性能，最近研制的膜已成功地用于一些工程中。     

镀制工艺对TiO2光学膜层折射率影响研究

研究分析了基底温度、沉积速率、氧气分压、离子束辅助沉积等工艺参数和条件对TiO2膜层折射率的影响.研究表明,随着基底温度升高,TiO2光学膜层折射率呈上升趋势;随着沉积速率提高,TiO2膜层折射率存在极值;采用离子束辅助沉积工艺,可以有效提高TiO2膜层折射率值,所制备的TiO2膜为非晶态结构,具有较高的折射率和较小的光学损耗.     

聚对苯(撑)二甲基膜的化学气相沉积(CVD)聚合

采用化学气相沉积(CVD)聚合工艺制备的对苯撑二甲基聚合物可广泛应用在航天、航空、军工、电子、生物医学工程、控制系统、文物保护、纳米材料和磁性材料等诸多领域.综述了聚对苯(撑)二甲基系列膜的化学气相沉积聚合工艺和原理,介绍了底物温度和沉积舱压力等主要因素对膜沉积率的影响和膜的一些主要性能,并讨论了典型的Parylene N膜的光氧降解性能.     

工艺条件对金刚石膜红外透射率影响的研究

为了优化金刚石沉积工艺,制备高透射率的CVD金刚石薄膜,采用傅里叶红外光谱仪对不同工艺条件下制备的CVD金刚石膜的红外透射率进行了测量,分析了不同工艺条件对金刚石膜红外透射率的影响,获得了最佳沉积参数.结果表明,金刚石膜的红外透射率与工艺条件密切相关,当衬底温度为750℃,碳源体积分数为2%,压强为2.5kPa时沉积的金刚石膜红外透射率最佳.     

Sm-Co薄膜的制备及微结构研究

在添加甘氨酸作为络合剂的水溶液体系中电沉积制备了Sm-Co薄膜,特征X射线谱(EDS)证明沉积膜由Sm、Co组成,X射线衍射分析表明Sm-Co膜为非晶态结构,扫描电镜观测结果显示,Sin-Co沉积膜表面颜色均匀,呈现银灰色但有裂纹和气泡.研究了沉积电压、主盐浓度配比、pH值、络合剂甘氨酸的添加等工艺参数对沉积膜的形貌及Sm含量的影响,结果表明,随着沉积电压的升高,沉积膜中Sm的含量先增加后减少,当沉积电压为1.5～2.0V vs.SCE时沉积膜的形貌最好,甘氨酸的添加对Sin-Co的形成有重要作用.     

家用电器热镀锌钢板的无铬耐指纹钝化

传统热镀锌钢板钝化工艺以铬酸盐体系为主,污染严重.以有机硅为主开发出了有机无机复合钝化剂,通过调整工艺参数在热镀锌钢板表面获得了较理想的钝化膜.考察了钝化膜膜厚、均匀性与各工艺参数之间的关系;探讨了不同钝化膜厚度对热镀锌钢板耐蚀性、耐指纹性、导电性及耐高温黄变性的影响.结果表明:无铬钝化膜的性能与铬酸盐转化膜基本一致,...     

热丝法沉积金刚石膜工艺参数优的微观机理与预测

弄清化学气相沉积金刚石膜的机理对优化工艺参数具有指导意义.在前期工作中,作者辨析了氢原子、甲基和乙炔在金刚石膜沉积中的作用.本文建立了两个微观指标,即甲基浓度和氢原子与乙炔浓度的比值,分别对应生长金刚石和刻蚀非金刚石碳.通过对C-H和C-H-O反应气氛的模拟,讨论了这两个指标与灯丝温度、气源组成和气压的关系,并构建了含氧气氛生长金刚石的C-H-O三元相图.对热丝法沉积金刚石膜的工艺参数的优化选择进行了机理分析与预测,为工业化生产金刚石膜提供了参考.     

水溶液中电沉积稀土合金的研究现状

综述了近年来水溶液中电沉积稀土及合金膜的工艺和机理等方面的研究.电沉积制备稀土合金膜主要有非水有机溶液及水溶液方法;沉积机理主要有欠电位沉积、诱导共沉积以及元素的电负性原理等.稀土合金膜具有优异的化学性质及其磁学、光学与俘获热中子等性能,为其广泛应用提供了基础.     

镍铬合金薄膜的研究进展

镍铬合金薄膜是重要的精密电阻和应变电阻薄膜材料.简述了镍铬合金薄膜的3种制备方法:真空蒸发沉积、磁控溅射沉积和离子束沉积;讨论了基底、工作气压、沉积时间等薄膜制备工艺参数以及退火工艺对薄膜性能的影响.重点叙述了镍铬合金薄膜、改良型镍铬合金膜、含氮镍铬合金膜、镍铬合金多层膜和纳米镍铬合金薄膜等膜系的特征.阐明了制备具有高电阻率、低电阻温度系数、高应变灵敏系数、良好的热稳定性等优异综合性能的镍铬合金薄膜的新工艺发展趋势.     

基于RFPECVD方法不锈钢上沉积类金刚石薄膜的机械与摩擦特性

讨论用射频等离子体增强化学气相沉积(RFPECVD)工艺,在室温下实现在1Cr18Ni9Ti不锈钢基底上镀类金刚石(DLC)膜.为提高DLC膜的结合力,首先在不锈钢基底上沉积Ti/TiN/TiC功能梯度膜.借助所设计的界面过渡层,成功地在不锈钢基底上沉积了一定厚度的DLC膜.通过优化沉积参数,所沉积的DLC膜在与100Cr6钢球对磨时摩擦系数低于0.020.在摩擦过程中DLC膜的磨损机制借助SEM、Raman分析进行了研究.     

Diamond-like carbon films produced in a butane plasma

Diamond-like carbon films produced in an r.f. butane plasma were characterized by X-ray photoemission analysis of the deposits. It was confirmed that films produced at low deposition rates were more diamond-like than films produced at high deposition rates. An investigation of the electrical properties of the films showed that the low deposition rate films were highly insulating whereas the high deposition rate films were conducting.     

化学水浴沉积时间对CdS薄膜性质的影响

采用CBD法在醋酸镉溶液体系中制备CdS半导体薄膜,通过XRD、XRF、SEM和光学透过率谱等测试手段研究了沉积时间对CdS薄膜沉积过程和性质的影响.结果表明,随着沉积时间的增加,薄膜增厚;S/Cd原子比增加,但都为富Cd的CdS薄膜;XRD研究表明,薄膜结构由立方、六方混合相向立方相转变,(111)方向成为择优生长方向;SEM研究表明,随沉积时间增加,薄膜变致密,薄膜表面出现的白色附着颗粒增多,尺寸增大;沉积时间对薄膜的光学性质也有很大的影响,随着沉积时间的增加薄膜透过率减小,而禁带宽度值增大.     

生长温度对CVD金刚石薄膜的影响

系统研究了ＣＶＤ金刚石薄膜成膜过程中生长温度对薄膜质量、生长率和力学性能的影响。研究结果表明：在典型沉积条件下，生长温度愈高、薄膜的晶体质量愈好；但薄膜的应力状况和附着性能变坏；在８００℃时，金刚石薄膜的生长速率最大。讨论了ＣＶＤ金刚石薄膜作为机械工具涂层的最佳生长温度。     

纳米Al2O3电泳沉积成膜的影响因素研究

为研究电泳沉积薄膜沉积量分布特征及影响因素,对纳米Al_2O_3材料进行电泳沉积薄膜试验和仿真研究。试验过程中,对纳米Al_2O_3薄膜沉积的微观形貌、成分及沉积量与电压、沉积时间关系进行了研究;在仿真研究过程中,利用电场、流场、沉积场多场耦合技术研究分析了电场分布、流场特性、沉积时间等对电泳沉积纳米Al_2O_3薄膜的影响。结果表明:电场在阴极正、反两侧强弱分布使得正面沉积量明显大于反面,同时流场的涡流分布特征加速了粒子在阴极边缘沉积。仿真结果与试验结果吻合度较好,验证了仿真模型的有效性,为进一步研究电泳沉积流体流动特性和沉积过程提供了一种新的研究方法和手段。     

Electroless deposition of CoPtWP magnetic thin films

CoPtWP magnetic thin films were prepared by electroless deposition. The influence of bath pH, deposition temperature and bath composition on the deposition speed, alloy content, microstructure, and magnetic properties of CoPtWP thin films were investigated. It was found that deposition speed increased gradually with the bath pH and deposition temperature. The cobalt content in the CoPtWP thin films varied from 77 at.% to 85 at.% by controlling the bath pH. The microstructure of CoPtWP thin films was dependent on bath pH and deposition temperature: two mixed structures, face centered cubic (fcc) and hexagonal close packed (hcp), were observed at low pH values and low deposition temperature. With the increase of pH values and deposition temperature, the intensity of fcc (111) peak suppressed gradually. The surface morphology was markedly influenced by bath pH, deposition temperature and bath composition. VSM and MFM measurements revealed that perpendicular coercivity had been increased with the bath pH. Unique hard magnetic properties of CoPtWP thin films with large perpendicular magnetic anisotropy were obtained at 90 °C and bath pH 13.0.     

微波等离子体化学气相沉积——一种制备金刚石膜的理想方法

综述了微波等离子体化学气相沉积(MPCVD)法制备金刚石膜技术,表明MPCVD是高速、大面积、高质量制备金刚石膜的首选方法。介绍了几种常用的MPCVD装置类型,从MPCVD装置的结构特点可以看到,用该类型装置在生长CVD金刚石膜时显示出独特的优越性和灵活性。用MPCVD法制备出的金刚石膜其性能接近甚至超过天然金刚石,并在多个领域得到广泛应用。     

射频磁控溅射沉积高质量ZnO薄膜的工艺研究

在室温下利用射频磁控溅射法在硅(100)基片上制备ZnO薄膜,利用X射线衍射(XRD)和扫描电子显微镜(SEM)对其结晶性能进行分析。研究了制备条件对薄膜沉积速率的影响。分析了薄膜沉积速率对薄膜结晶状况的影响及源气体中的氧气和氩气的流量比对薄膜结晶状况的影响。研究结果表明,薄膜的生长速率强烈依赖于射频功率和工作气压,薄膜的结晶性能强烈依赖于薄膜的沉积速率和反应气体中氧气和氩气的流量比。制备高结晶质量的ZnO薄膜的最佳工艺参数为靶到衬底的距离为4cm,输入功率为250W,源气体中氩气和氧气的流量比n(Ar)∶n(O2)为5∶20,溅射工作气压为2Pa。在最佳工艺条件下所制备的薄膜表面平整致密,接近单晶,在可见光区的透射率高达90%。     

High-speed oxide coating by laser chemical vapor deposition and their nano-structure

Oxide thick films, partially yttria-stabilized zirconia (YSZ) and titania (TiO₂), were prepared by laser chemical vapor deposition (LCVD). The assistance of laser tremendously increased the deposition rate for YSZ and TiO₂ films up to 660 and 2500 μm/h, respectively. The increase in the deposition rate was accompanied by plasma formation around the deposition zone, and the plasma was observed over critical values of laser power and substrate pre-heating temperature. A wide variety of morphologies of films from feather-like columnar to dense microstructures were obtained depending on deposition conditions. The columnar structure contained a large amount of nano-pores at columnar boundary and inside grains. These columnar structure and nano-pores were advantageous for applying YSZ films to thermal barrier coatings.     

Ion beam sputter deposited Permalloy thin films

Ni₈₀Fe₂₀ thin films were deposited using a wide range of process parameters in a dual source ion beam sputter deposition system. The films were characterized structurally, chemically, and magnetically. Two modes of deposition were investigated; the first permitted concurrent second source bombardment during film deposition but was limited in net deposition rate to about 300 Å/m; the second provided deposition rates in excess of 1000 Å/m, but did not allow for concurrent ion bombardment from the second ion source. Depending on specific conditions film stress varied from slightly tensile to highly compressive in both deposition modes. This, combined with small variations in magnetostriction, resulted in films with vertical anisotropy and stripe domain patterns as well as conditions where well-formed closure domain patterns were observed in yoke shaped structures. For monolithic films, easy axis coercivities <0.7 Oe, anisotropy fields ≃5Oe and hard axis coercivities of <0.5 Oe were obtained     

A comparative study of p-type diamond films using Raman and transport measurements

The influence of deposition temperature in the properties of synthetic diamond films grown by two different chemical vapor deposition (CVD) techniques, hot-filament- and microwave-plasma-assisted, was investigated. These samples were obtained using the optimal growth conditions previously achieved in this work. Raman spectroscopy was employed in order to investigate the diamond film quality as a function of the deposition temperature. It was found that the nondiamond carbon bands decrease as the deposition temperature increases for both the deposition methods, leading to higher-quality diamond films. The micro- and macro-Raman spectra showed that the nondiamond band is already present in a single diamond grain. Both techniques provided well homogeneous diamond films and with equivalently good quality. Boron-doped diamond films with different carrier concentration levels were also studied. In order to get details about the electrical properties of the films, resistivity as a function of the boron concentration—in association with Raman spectra—and temperature-dependent transport measurements were employed. The results showed that the boron doping is the main responsible for the conductivity and that the variable range hopping (VRH) mechanism dominates the transport in these doped diamond films.