共查询到19条相似文献,搜索用时 156 毫秒
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基于非选择性外延,自对准注入技术,集电区选择性注入和快速热退火工艺,提出了一种适用于1.5μm BiCMOS集成技术的SiGe HBT器件结构。该结构具有内基区薄,外基区厚,B/E结两侧杂质浓度低,发射极/基极自对准诸优点。利用TSuprem4和Medici进行工艺模拟和电学特性仿真。结果表明,所设计的的SiGe HBT具有良好的电学特性,其最大电流增益为210,当Vce=2.5 V时,截止频率达到65 GHz,验证了器件结构设计的合理性。 相似文献
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非外延集电区的超高压锗硅异质结双极晶体管 总被引:1,自引:1,他引:0
介绍了在0.18 μm逻辑工艺平台上全新设计的超高压锗硅异质结双极晶体管(SiGe HBT),该器件改变了外延的一维纵向集电区,而采用了通过离子注入掺杂的“L形”二维集电区结构,集电区包括本征基区下方的纵向集电区和场氧底部横向集电区.该器件可在同一工艺中通过版图中横向集电区长度的变化实现不同的击穿电压,因此可制作超高压... 相似文献
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研究了HBT产生负阻的可能机制,通过对材料结构和器件结构的特殊设计,采用常规台面HBT工艺,先后研制出3类高电流峰谷比的恒压控制型负阻HBT.超薄基区HBT的负阻特性是由超薄基区串联电阻压降调制效应造成的,在GaAs基InGaP/GaAs和AlGaAs/GaAs体系DHBT中均得到了验证.双基区和电阻栅型负阻HBT均为复合型负阻器件.双基区负阻HBT通过刻断基区,电阻栅负阻HBT通过在集电区制作基极金属形成集电区反型层,构成纵向npn与横向pnp的复合结构,由反馈结构(pnp)的集电极电流来控制主结构(npn)的基极电流从而产生负阻特性.3类负阻HBT与常规HBT在结构和工艺上兼容,兼具HBT的高速高频特性和负阻器件的双稳、自锁、节省器件的优点. 相似文献
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SiGe HBT and BiCMOS technologies for optical transmission and wireless communication systems 总被引:6,自引:0,他引:6
Technologies for a self-aligned SiGe heterojunction bipolar transistor (HBT) and SiGe HBTs with CMOS transistors (SiGe BiCMOS) have been developed for use in optical transmission and wireless communication systems. n-Si cap/SiGe-base multilayer fabricated by selective epitaxial growth (SEG) was used to obtain both high-speed and low-power performance for the SiGe HBTs. The process except the SEG is almost completely compatible with well-established Si bipolar-CMOS technology, and the SiGe HBT and BiCMOS were fabricated on a 200-mm wafer line. High-quality passive elements, i.e., high-precision poly-Si resistors, a high-Q varactor, an MIM capacitor, and high-Q spiral inductors have also been developed to meet the demand for integration of the sophisticated functions. A cutoff frequency of 130 GHz, a maximum oscillation frequency of 180 GHz, and an ECL gate-delay time of 5.3 ps have been demonstrated for the SiGe HBTs. An IC chipset for 40-Gb/s optical-fiber links, a single-chip 10-Gb/s transceiver large-scale IC (LSI), a 5.8-GHz electronic toll collection transceiver IC, and other practical circuits have been implemented by applying the SiGe HBT or BiCMOS technique. 相似文献
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Zhenqiang Ma Ningyue Jiang Guogong Wang Alterovitz S.A. 《Electron Device Letters, IEEE》2005,26(6):381-383
An 18-GHz, 300-mW SiGe power heterojunction bipolar transistor (HBT) is demonstrated. The optimization of SiGe HBT vertical profile has enabled this type of devices to operate with high gain and high power at this high frequency. In the common-base configuration, a continuous wave output power of 24.73 dBm with a power gain of 4.5 dB was measured from a single 20-emitter stripe SiGe (2/spl times/30 /spl mu/m/sup 2/ of each emitter finger) double HBT. The overall performance characteristics represent the state-of-the-art SiGe power HBTs operating in the K-band frequency range. 相似文献
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Salmon S.L. Cressler J.D. Jaeger R.C. Harame D.L. 《Electron Devices, IEEE Transactions on》2000,47(2):292-298
This paper analyzes the effects of Ge profile shape on the bias and temperature characteristics of advanced UHV/CVD SiGe heterojunction bipolar transistors (HBTs). The widely used bandgap reference (BGR) design equation and a more general analytical expression incorporating Ge grading developed in this work are used to compare silicon devices to their SiGe counterparts. Theory, device measurements, and SPICE simulations are used to investigate the impact of Ge grading on SiGe HBT precision voltage references. It is concluded that conventional SPICE can be used to account for Ge grading effects in SiGe HBT modeling. Sufficient Ge grading can have a significant impact on the accuracy of precision voltage references, particularly at reduced temperatures, and thus warrants attention 相似文献
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A current gain cutoff frequency fT of 508 GHz is reported for a SiGe heterojunction bipolar transistor (HBT) operating at 40 K. This 63% increase over the 311 GHz value measured at room temperature results from the overall decrease of the transit and charging times. Two HBTs are compared to highlight the importance of the topology of the HBT to reach maximum performances. 相似文献
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对SiGe HBT低频噪声的各噪声源进行了较全面的分析,据此建立了SPICE噪声等效电路模型,进一步用PSPICE软件对SiGe HBT的低频噪声特性进行了仿真模拟.研究了频率、基极电阻、工作电流和温度等因素对低频噪声的影响.模拟结果表明,相较于Si BJT和GaAs HBT,SiGe HBT具有更好的低频噪声特性;在低频范围内,可通过减小基极电阻、减小工作电流密度或减小发射极面积、降低器件的工作温度等措施来有效改善SiGe HBT的低频噪声特性.所得结果对SiGe HBT的设计和应用有重要意义. 相似文献
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DAI Guang-hao WANG Sheng-rong LI Wen-jie 《半导体光子学与技术》2006,12(3):150-152,193
Based on the advantages of SOI technology, the frequency performance of SiGe HBT with SOI structure has been simulated. Compared with bulk SiGe HBT, the results show that the buried oxide layer (BOX) can reduce collector-base capacitance CCB with the maximum value 89.3%, substrate-base capacitance CSB with 94. 6%, and the maximum oscillation frequency is improved by 2.7. The SOl structure improves the frequency performance of SiGe HBT, which is adaptable to high-speed and high power applications. 相似文献
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Modeling and characterization of SiGe HBT low-frequency noise figures-of-merit for RFIC applications
Jin Tang Guofu Niu Zhenrong Jin Cressler J.D. Shiming Zhang Joseph A.J. Harame D.L. 《Microwave Theory and Techniques》2002,50(11):2467-2473
We present the first systematic experimental and modeling results of noise corner frequency (f/sub C/) and noise corner frequency to cutoff frequency ratio (f/sub C//f/sub T/) for SiGe heterojunction bipolar transistors (HBTs) in a commercial SiGe RF technology. The f/sub C/ and f/sub C//f/sub T/ ratio are investigated as a function of operating collector current density, SiGe profile, breakdown voltage, and transistor geometry. We demonstrate that both the f/sub C/ and f/sub C//f/sub T/ ratio can be significantly reduced by careful SiGe profile optimization. A comparison of the f/sub C/ and f/sub C//f/sub T/ ratio for high breakdown and standard breakdown voltage devices is made. Geometrical scaling data show that the SiGe HBT with A/sub E/=0.5/spl times/2.5 /spl mu/m/sup 2/ has the lowest f/sub C/ and f/sub C//f/sub T/ ratio compared to other device geometries. An f/sub C/ reduction of nearly 50% can be achieved by choosing this device as the unit cell in RF integrated-circuit design. 相似文献