一种新型图形发生器硬件方案的研究

介绍了一个电子束曝光系统图形发生器的硬件实现方案，该方案DSP处理器为核心，通过USB接口与上位机通讯，具有标记检测和曝光扫描两项基本功能，同时增加了圆形和圆环图形的处理功能。通过将现有图形发生器的功能移植至数字信号处理器，使各种图形硬件化，提高了图形的运算和处理速度，克服了以前图形发生器存在的许多弊端。     

基于DSP图形发生器曝光算法的研究

新型图形发生器使用DSP控制曝光过程，因此要求DSP程序高效地控制电子束实现图形的高精度扫描。而以往的算法(包括Bresenham算法)无法满足电子束扫描的特殊性，因此提出一种DSP实现曝光的算法。分析了Brcsenham算法的缺陷，同时对提出的新算法进行工作效率的理论分析和曝光数据的采集对比，结果证明该算法是一种能够保证精度和效率的算法。同时还探讨了斜矩形不分割的曝光算法。     

聚焦离子束系统中图形发生及自动套准系统的研究

本文描述了一种用于聚焦离子束系统的图形发生器和自动套准系统的研究和实现，并探讨了发展和改进的方向。该系统采用硬件实现扫描控制和坐标变换。在我们的实验条件下，实现了单场扫描２秒钟，套准计算４秒钟，该系统同样也适用于电子束曝光机系统 。     

图形发生器的成像系统

为实现电子束曝光机扫描场的线性畸变校正,设计了图形发生器的成像系统,该系统包括硬件和软件两部分。硬件设计上使用了高速、高精度模数转换器,并对其工作方式及图像采集流程做了具体阐述。软件设计上利用点阵成像的原理,把采集到的图像信号转变成相应的灰度值,并按点阵排列,将最终获得的图像显示在计算机屏幕上,以实现校正。同时还给出了对图像进行局部放大的方法及计算公式。实验证明,该成像系统工作正常,可以获得清晰的图像。     

一种新型电子束曝光文件格式设计及其应用

提出一种新型的电子束曝光数据格式，引入了面向对象的设计和适应于矢量型电子束扫描方式的设计，提高了对通用图形数据格式转换的精确度和效率，同时更便于对电子束曝光机的曝光控制。该设计已在电工所的科研项目“纳米级电子束曝光系统”中得到应用，被称之为EDF数据格式。     

电子束曝光机特殊图形辅助发生器

介绍电子束曝光机的图形发生器系统中用以解决硬件化高速扫描特殊图形和硬件过于复杂的特殊图形辅助发生器，叙述了它的工作原理，硬件配置和软件设计及特殊图形的描述参数和计算公式。     

SAL601负性电子束抗蚀剂纳米级集成电路加工

讨论了采用SAL601负性化学放大电子柬抗蚀剂进行电子束曝光应用于纳米级集成电路加工的实验方法与工艺条件。经过大量实验总结，通过变剂量模型对电子束曝光中电子散射参数进行提取，应用于邻近效应校正软件，针对集成电路曝光图形进行邻近效应校正。校正后的曝光图形经过曝光实验确定显影时间及曝光剂量，最终得到重复性良好的，栅条线宽为70nm的集成电路曝光图形。     

基于TMS320C6713的电子束曝光机图形发生器的硬件设计

提出了一套功能较为完备的新型扫描电子束曝光机图形发生器的硬件设计方案.方案采用TMS320C6713芯片作为核心单元,并由USB2.0接口电路、存储器扩展电路、标记检测控制电路、曝光控制电路和束闸控制电路构成.方案具有数据处理能力强、速度快、接口方便等优势,克服了传统图形发生器单纯依靠软件完成、速度慢、精度低、工作不稳定的缺点.     

SAL601负性电子束抗蚀剂纳米级集成电路加工

讨论了采用SAL6 0 1负性化学放大电子束抗蚀剂进行电子束曝光应用于纳米级集成电路加工的实验方法与工艺条件。经过大量实验总结 ,通过变剂量模型对电子束曝光中电子散射参数进行提取 ,应用于邻近效应校正软件 ,针对集成电路曝光图形进行邻近效应校正。校正后的曝光图形经过曝光实验确定显影时间及曝光剂量 ,最终得到重复性良好的 ,栅条线宽为 70nm的集成电路曝光图形     

基于SEM的压电式微纳操纵系统

微纳操纵系统是当前先进制造技术领域的一个重要发展方向.为了实现在亚微米及纳米尺度下进行实时观测下的操纵,设计了一种基于扫描电镜(SEM)的压电式微纳操纵系统,本系统由数字式环境扫描电子显微镜系统、精密工件台、微纳操作机构、图形发生器和计算机系统组成,采用数字式环境扫描电子显微镜作为微纳操作的观测器,在SEM的样本室内安装微纳操作臂,计算机系统控制微纳操作臂,使其在SEM的实时观测下对放置在精密工件台上的样本进行操纵,并且还可利用图形发生器进行电子束曝光以制备微纳结构.实验证明,本系统不仅能适于在各种环境下进行微纳操纵,且还可制作微纳结构,具有很强的实用性.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.