Ka-band monolithic amplifier using 0.5 mu m gate length ion-implanted GaAs/AlGaAs heterojunction FET technology

Monolithic, two-stage amplifiers using 0.5*80 mu m/sup 2/ gate GaAs/AlGaAs heterojunction FETs have been developed for Ka-band operation. These monolithic two-stage amplifiers were fabricated using ion implantation for the active layer and optical lithography for the 0.5 mu m gate length. MMIC two-stage amplifiers achieved average gains of 12.6+or-1.4 dB at 30 GHz and 8.8+or-2.0 dB at 40 GHz, respectively, for all 39 sites across a three inch diameter wafer. These are the first reported results for MMIC two-stage amplifiers using 0.5 mu m gate length ion-implanted GaAs/AlGaAs heterojunction FETs achieving over 10 dB gain at Ka band.<>     

Impedance characterization of GaAs FET switches

Since the GaAs FET switch can be regarded as a linear small-signal device in the on and off states, a linear analysis is carried out only of the two states, but taking into account the geometry of electrodes, passivation layers, and depletion regions. The rectangular boundary division method is applied to solve Laplace's equation for the impedance characterization of GaAs FET switches. Equivalent electrical circuits composed of capacitors and resistors are defined for the on state and off state of a FET switch. The capacitances and resistances in the equivalent circuits are estimated and compared with experimentally measured values at 10 GHz. The quality factor of the FET switch, which can be used for estimating insertion loss, is calculated by using the two equivalent series impedances of the FET switch corresponding to the two states     

Balanced monolithic oscillators at K- and Ka-band

A technique for generating accurate antiphase signals is presented in this paper. Monolithic oscillators at 20 and 40 GHz are realized using this technique. These oscillators have dual outputs that are mutually locked in antiphase. The inherent amplitude and phase balances between the output signals are verified. This is achieved by direct measurement using injection-locking polar diagrams, as well as low-frequency measurements of the down-converted oscillator outputs. The operation of the balanced oscillator as a multidevice power-combining oscillator is also investigated. Improvements of phase noise reduction and frequency stabilization are demonstrated at the combined oscillator output. This new oscillator topology shows significant potential in balanced circuits like mixers, multipliers, and modulators where circuit performance relies on the precise generation of the balanced signals     

Ka波段4位数字移相器的设计

移相器的应用十分广泛,比如各种通讯和雷达系统,微波仪器和测量系统,特别在相控阵雷达中应用最多。移相器是相控阵雷达T/R组件的重要组成部分。本文主要对Ka波段4位数字移相器进行了研究,并完成了实际电路的设计、制作和测试。在34.2GHz±300MHz频率范围内,所有相移位（16个）的插入损耗都小于10.71dB,输入端和输出端的回波损耗也都小于-14.84dB。另外,所有相移位在中心频率34.2GHz处的相位误差都小于士3.0°,最小仅有0.15°,所有指标均优于设计要求。     

Design, fabrication, and characterization of monolithic microwave GaAs power FET amplifiers

The design, fabrication, and characterization of three- and four-stage monolithic GaAs power FET amplifiers are described. Each of the amplifier chips measures 1 mm × 4 mm. Procedures for characterizing these monolithic amplifiers are outlined. Output powers of up to 1 W with 27-dB gain were achieved with a four-stage design near 9 GHz. The circuit topologies used were flexible enough to allow external bondwires to be used as shunt inductors for amplifier operation at C- or S-bands. An output power of 2 W with 28-dB gain and 36.6-percent power-added efficiency was achieved at 3.5 GHz, using a modified four-stage amplifier.     

High performance monolithic GaAlAs/GaAs photodiode arrays for voltage-controlled semiconductor switches

Monolithic GaAlAs/GaAs photodiode arrays (PDA's) have been developed as control elements for voltage-controlled switching applications. A p-type GaAs absorbing layer and an n-type GaAlAs window layer were grown by LPE on a semi-insulating GaAs substrate. Individual photodiodes were isolated and were series connected by an overlay metallization. A six cell PDA, having an active area of 1.28 mm², produces an open-circuit voltage of 5.3 V and a short-circuit current of 33 µA when subjected to a normally incident power flux of 50 mW/cm²at 865 nm. Such devices may be useful in a variety of voltage-controlled switching applications, opto-isolator circuits, and wherever low power, floating, voltage/bias sources are required.     

Improving performance of AlGaAs/GaAs monolithic laser/FET by GRIN-SCH quantum-well laser

An AlGaAs/GaAs graded-index-waveguide separate-confinement-heterostructure (GRIN-SCH) single-quantum-well (SQW) laser has been monolithically integrated with a couple of field-effect-transistor drivers on a semi-insulating GaAs substrate. The adoption of the GRIN-SCH SQW laser has enabled an improvement in the laser/FET performance, exhibiting a low laser threshold current (12 mA) and a high sensitivity of the output light power to the input gate voltage (7.5 mW/facet/V).     

带偏射补偿机制的Birkhoff-von-Neumann交换机方案及其性能分析

Birkhoff-von-Neumann(BvN)交换机具有较低的执行复杂度和较高的吞吐量,但无法在业务突发的环境下提供性能保证。为此,提出一种带偏射的BvN(D-BvN)交换机制来增强交换机性能。D-BvN交换机通过平均业务矩阵的BvN分解,为每个虚电路(VC)提供均值带宽保证,同时通过偏射来处理业务突发。其主要思想是利用处于空闲状态的VC的闲置容量处理处于溢出状态的VC的溢出业务。具体地,偏射机制利用空闲VC的闲置容量完成两件事情:一是把溢出业务偏射到其他VC,二是给偏射业务提供到达目的端口的带宽。分析和仿真结果表明,所提方法不仅可以获得接近100%的输入负载吞吐量,而且具有较低的包乱序概率和较小的业务包延时。     

Planar monolithic integration of LED and FET devices on a conductive substrate

This paper describes results of a study on the monolithic integration of AlGaAs light-emitting diodes with GaAs field-effect transistors on a conductive p-GaAs substrate. Using a selective growth technique, a horizontal configuration is fabricated that allows separate optimization of the two types of devices and provides a quasi-planar surface. This approach is compatible with the standard GaAs integrated-circuit technology. By inserting an undoped layer and a p-n junction between the active layer of the FET and the substrate leakage currents below 500 µA for bias voltage up to 9 V are obtained for these insulation structures. The emitted light intensity of the LED, connected in series with the FET, exhibits a nearly linear dependence on the driving gate potential. Temperature or optical crosstalk effects were not observed. Fall and rise times around 20 ns were measured from the pulse response characteristics. This switching time is limited by the LED whereas the FET and isolation layers were found not to affect the switching behavior of the circuit in this time frame.     

Performance of monolithic GaAs FET oscillators at J-band

Monolithic GaAs FET oscillators were demonstrated at J-band frequencies. Output power up to 160 mW with 23-percent efficiency at 12 GHz was achieved. With a discrete tuning varactor, a 300-µm gate-width FET monolithic oscillator was tuned from 16 to 20 GHz. The average output power was l0 mW.     

Ka频段上变频模块的设计

介绍了Ka频段上变频模块的方案设计与性能测试.该模块采用单一本振源两次变频方案,将L频段500MHz带宽信号上变频至Ka频段.通过整体方案的优化设计和高性能滤波器的使用,在信号带内获得极低的杂散、优良的相噪特性和较为理想的幅频响应特性.经加工、测试,整套模块性能优良,工作状态稳定,满足设计指标的要求.     

Ka波段上变频组件设计

介绍了一种基于陶瓷工艺的Ka波段上变频组件的设计。组件采用一次变频方案,将C波段800MHz带宽信号上变频至Ka波段,使用ADS、HFSS等软件完成系统级和关键单元电路仿真设计,经加工测试该组件单载波增益大于14dB,带外抑制大于30dBc(0.1～27GHz范围内),三阶交调抑制优于50dBc。     

基于微机电系统开关的四位移相器设计

为了解决相控阵雷达小型化和低损耗的问题,设计了一个工作频率为2.2 GHz的射频微机电系统(MEMS)四位开关线型移相器。首先分析了直接接触式MEMS串联开关的插入损耗和隔离度,并得到仿真结果。在此基础上设计了基于该开关的移相范围为0~180o的四位移相器电路,相移量为12o每步。采用HFSS软件对其进行仿真,得到移相精确度、插入损耗和隔离度等关键结果,移相器工作在2.2 GHz时,隔离度大于20 dB,插入损耗小于1 dB。该设计与传统移相器相比体积更小,且具有更小的插入损耗和更大的隔离度。     

Design and performance evaluation of a banyan network basedinterconnection structure for ATM switches

This paper presents a new self-routing packet network called the plane interconnected parallel network (PIPN). In the proposed design, the traffic arriving at the network is shaped and routed through two banyan network based interconnected planes. The interconnections between the planes distribute the incoming load more homogeneously over the network. The throughput of the network under uniform and heterogeneous traffic requirements is studied analytically and by simulation. The results are compared with the results of the baseline network and another banyan network based parallel interconnection network. It is shown that, for the proposed design, a higher degree of heterogeneity results in better performance     

一种宽带Ka频段上变频模块的设计与实现

为了满足系统对工作频段宽带化的需求,设计了一种宽带Ka频段上变频模块,其功能是将C频段信号(2.0～4.0 GHz)上变频到Ka频段信号(25.0～27.0 GHz,29.0～31.0 GHz)。通过合理的链路频率配置和电平分配,减小了混频非线性导致的组合频率干扰,输出杂散降低到-60 d Bc。运用MMIC-1对本振输出信号进行二次、三次倍频。根据倍数次数不同,运用2组滤波器进行分段滤波来消除谐波杂散。测试结果表明,输出信号在100 k Hz处的相位噪声指标优于-100 d Bc/Hz。     

Ka频段上变频模块设计

论述一种Ka频段上变频模块设计,对模块的杂散和相位噪声性能做了分析,根据分析结果,设计出合理的变频方案。滤波器采用Ansoft Designer和HFSS软件协同仿真,薄膜工艺制作,获得足够的杂散抑制度从而实现低杂散。应用取样锁相技术合成了相位噪声极低的27 GHz本振。对波导—微带过渡结构进行仿真,并给出仿真结果。从测试结果表明,模块设计实现了低杂散和低相位噪声。     

Ka频段薄膜滤波器设计

介绍了一种简单有效的Ka频段薄膜微带滤波器设计方法。通过选 择恰当的滤波器模型,提取参数和初值,用ADS和Designer两种仿真软件结合进行设计,得 到了理想的滤波器响应曲线。通过三轮滤波器投版测试得到工艺补偿准确值,用于修正仿真 设计和滤波器实际曲线之间的偏差,最后达到了投片测试结果和仿真设计基本吻合的目的。     

Ka频段下变频模块设计

介绍了Ka频段下变频模块的设计。该模块的功能是将接收到的19.2~21.2GHz射频信号下变频到2.2~4.2GHz的中频信号。实际制作的下变频模块变频增益为20dB±1 dB,噪声系数小于6dB,镜频抑制大于100dB。该模块在Ka频段卫星通信系统中有着广阔的应用前景。试验结果证明,微波CAD工具的应用不仅降低了产品的研制成本,而且缩短了产品从电路设计到批量生产的时间。     

一种Ka频段多波束天线设计研究

针对临近空间飞行器测控的需求,提出了一种Ka频段多波束天线。分析了天线的实现形式,讨论了偏馈馈源位置与覆盖区域的关系、焦径比对偏馈波束性能的影响以及副面大小对偏馈波束性能的影响。从中总结了规律,对天线的优化设计有一定的指导意义。     

一种Ka波段微带-波导转换的设计

设计出了一种Ka波段微带-波导鳍线转换结构,实测结果表明频带内插入损耗小于0.3dB,回波损耗优于20dB,端口驻波优于1.20。