水对P2O5-SiO2系玻璃质子导电性能的影响

利用sol-gel法制备了P2O5-SiO2系质子导电玻璃。扫描电镜分析发现P2O5-SiO2玻璃具有微孔结构,并分析了特定条件下水对玻璃质子电导率的影响。结果表明:其质子电导率的对数,随吸水浓度对数值的增加而呈线性增加,直至吸水量达到饱和,在30℃,RH为30%条件下,电导率为10–4~10–3 S.cm–1。     

Fe_2O_3对Bi_2O_3-B_2O_3-ZnO系统封接玻璃结构及性能的影响

采用熔融冷却的方法制备了(40–x)Bi_2O_3-30B_2O_3-30Zn O-x Fe_2O_3(0≤x≤10)系统玻璃。研究了Fe_2O_3取代Bi_2O_3对Bi_2O_3-B_2O_3-Zn O系统玻璃结构、玻璃化转变温度(t_g)、初始析晶温度(t_c)、热稳定性、热膨胀系数(α)及化学稳定性的影响。红外光谱(FTIR)结果表明,Fe2O3以网络修饰体存在于玻璃结构间隙,增强了玻璃结构,玻璃密度减小。随着Fe_2O_3含量的增加,t_g、t_c逐渐升高,玻璃的热稳定性有所降低。α从8.2×10~(–6)℃~(–1)减小至7.4×10~(–6)℃~(–1),玻璃的软化点(t_s)逐渐从439℃升高到486℃。引入Fe_2O_3后,玻璃的化学稳定性提高。     

掺杂过渡金属氧化物对ZnO-B_2O_3-SiO_2玻璃的改性研究

采用高温熔融和过渡金属氧化物掺杂的方法,制备了掺杂不同过渡金属氧化物(Sb2O3、TiO2、CeO2、MnO2)的ZnO-B2O3-SiO2无铅玻璃。研究了所制玻璃的物理化学性能。结果表明:掺杂过渡金属氧化物后,ZnO-B2O3-SiO2玻璃的结构和封接性能得到较大改善,玻璃的耐水性提高1.5～2.0倍,线膨胀系数从60×10–7/℃降至40×10–7/℃。     

Gd(Sm)掺杂CeO2的沉淀法合成与导电性能研究

采用碳酸盐共沉淀法合成Ce0.8Gd0.2O1.9和Ce0.8Sm0.2O1.9粉体,并用交流阻抗谱法研究其氧离子导电性能。结果表明,在600℃的热处理温度下,可以合成出单一萤石结构的超微细粉体(~200nm),在1400℃烧结后其相对密度达到95%以上。在测试温度为800℃时,Ce0.8Gd0.2O1.9和Ce0.8Sm0.2O1.9的氧离子电导率分别达到7.8×10–1S·cm–1和8.5×10–1S·cm–1。在400~800℃范围内,其氧离子导电活化能分别为0.80eV和0.72eV。     

Li_2CO_3掺杂对SnO_2基导电陶瓷结构及性能的影响

采用固相法制备了SnO_2导电陶瓷,研究了Li_2CO_3掺杂量对SnO_2导电陶瓷的导电性能和体积密度以及微观结构的影响。结果表明:Li_2CO_3的掺杂不改变SnO_2导电陶瓷的晶体结构,在一定的掺杂范围内有利于晶体的生长。随着Li_2CO_3掺杂量的增加,SnO_2导电陶瓷的电阻率先降低,然后升高;体积密度先增加然后减小。当烧结温度为1 350℃,Li_2CO_3掺杂量为质量分数0.7%时,SnO_2导电陶瓷的综合性能较好,体积密度为5.027 g/cm3,电阻率为5.638×10–3?·cm。     

掺杂浓度对AZO薄膜结构和性能的影响

采用溶胶–凝胶工艺在玻璃基片上制备出Al3+掺杂型的ZnO(AZO)透明导电薄膜,对薄膜进行了XRD和SEM分析,并对其光电性能作了详细的研究。结果表明薄膜为纤锌矿型结构,呈c轴方向择优生长;薄膜的可见光透过率可达80%以上;Al3+掺杂型的ZnO透明导电薄膜的电阻率为1.5×10–2~8.2×10–2?·cm。     

V_2O_5添加剂对RuO_2系厚膜电导率的影响

目前,已试制成功一种用V_2O_5掺入到RuO_2导电相中的厚膜玻璃釉电阻器。利用固相反应,可将不同量的V_2O_5引入到RuO_2晶格中。随着V_2O_5的浓度从2wt％增加到6wt％,片电阻率从235kΩ/□下降到10kΩ/□,并发现其电导率“σ”符合σ=KS(1-S)的方程。     

低温烧结BaO-TiO_2-ZnO系陶瓷的研究

将ZnO-H3BO3(ZB)玻璃作为烧结助剂添加到BaO-TiO2-ZnO系(BTZ)陶瓷中,以实现BTZ陶瓷的低温烧结。研究了ZB玻璃的加入及球磨时间对BTZ陶瓷的烧结性能和介电性能的影响。结果表明:ZB玻璃的加入,明显降低了BTZ陶瓷的烧结温度。添加质量分数6%的ZB玻璃、球磨10 h时,BTZ陶瓷能够在950℃下致密烧结,获得良好的介电性能(1 MHz):εr=35.55,tanδ=2.2×10–4,–10×10–6/℃<α<+10×10–6/℃(–55～+125℃)。     

低功耗微型CO2传感器的研制

制作了一种新型微型结构CO2传感器,该传感器采用Al2O3陶瓷片作为衬底,sol-gel法制备的固体电解质NASICON(sodiumsuperionicconductor)材料为离子导电层,复合碳酸盐Li2CO3-BaCO3(摩尔比为1:1.5)为敏感电极。该传感器在CO2浓度为(500~5000)×10–6体积分数范围内表现出良好的敏感特性,灵敏度达到67.3mV/decade(毫伏/10×10–6体积分数),并且功耗由原来的1.08W降到0.72W。微型元件的响应恢复时间分别为20s和58s。     

ZnO-B_2O_3玻璃对Mg_2TiO_4微波介质陶瓷结构和性能的影响

利用传统固相烧结法制备了ZnO-B2O3玻璃掺杂的Mg2TiO4微波介质陶瓷,研究了ZnO-B2O3玻璃掺杂对所制陶瓷相成分、微观形貌和微波介电性能的影响。结果表明:ZnO-B2O3玻璃掺杂能使Mg2TiO4陶瓷的致密化温度降低200℃左右。当Mg2TiO4中掺杂质量分数2%的ZnO-B2O3玻璃时,经1 300℃烧结所得陶瓷微波性能较好:εr=13.62、Q.f=101 275 GHz、τf=–51×10–6/℃。     

电导率对旋波介质吸波性能的影响

旋波介质的吸波性能与介质的手性参量有关,而手性参量又与介质的电导率有关。制备了4种不同电导率基底的旋波介质,根据自由空间测量旋波介质手性参量的方法,通过测量两次复反射系数、透射偏转角和椭偏率,计算得到介质的手性参量和吸波性能。结果表明,改变旋波介质基底的电导率,可以调节旋波介质的电磁性能和吸波性能,当基底的电导率为4.2×10–2 S/cm时,旋波介质的吸波效果最好,其反射系数的最小值达–24 dB。     

低维Bi_2Te_3热电材料的制备与性能研究

用溶剂热法制备了直径在100nm以内的一维针状及厚20～30nm、长几微米的二维花朵状Bi2Te3热电材料,分析了不同形貌产物的生长机理,并对其热电性能进行了比较。结果表明,添加剂的分子结构对产物形貌起决定性作用。不同形貌产物的热电性能随温度变化的机制不同,一维纳米结构Bi2Te3产物的功率因子随温度升高而增加,最大值为143.1μΩ·m–1K–2。而二维纳米结构的Bi2Te3产物虽然在室温附近有较大的Seebeck系数,约100μV/K,但由于其电导率较低,功率因子在较宽的温度范围内保持在23μΩ·m–1K–2左右。     

Effect of high voltage electric field on structure and property of PEDOT:PSS film

Low electrical conductivity of PEDOT:PSS film is to some extent a limit for its wide application. To solve this problem, the high voltage electric field was used to improve the film’s electrical conductivity and its effects on the film’s structure and properties were investigated. The PEDOT:PSS film was prepared on quartz substrate with spin coating. Visible light transmittance of the prepared film was tested with UV–Visible spectroscopy and chemical structure was measured with Fourier transform Raman spectroscopy (FIRM). The surface morphology was characterized with AFM, and electrical conductivity was measured with Hall effects measurement. The results showed that with the increase of the electric field, the electrical conductivity of PEDOT:PSS film was boosted rapidly at first, and then improved slowly when the electric field was above 200 kV/m. The film’s electrical conductivity improved more than 17 times in total from 0.51 × 10^–3 up to 8.92 × 10^–3 S/m. However, the film’s visible light transmittance decreased only a little with the increase of the electric field, not more than 3%. In addition, despite little change in the chemical structure of the PEDOT:PSS film, its surface roughness increased significantly with the increase of the electric field intensity.     

Electrical conductivity of amorphous films of chalcogenide compounds in high electric fields

Effect of the electric field’s strength and temperature on the electrical conductivity of amorphous thin films of chalcogenide compounds has been studied. It is demonstrated that, at strengths of the electric field exceeding 10⁴ V cm^?1, the current increases exponentially as the voltage is increased. The activation energy of the temperature dependence of the conductivity decreases as the strength of the electric field is increased. A model that satisfactorily describes the experimental data is suggested on the basis of the assumption that the increase in the carrier concentration with the field strength has a dominant effect on the conductivity. The effective carrier’s mobility of ～10^?2 cm² V^?1 s^?1 and the activation length of ～(10–30) nm, which represents the influence of the electric field, are used as characteristic parameters of the model.     

激光改性硅酸盐玻璃表面局域制备金属铜层

为了实现普通硅酸盐玻璃表面的金属化,利用波长为355nm的脉冲紫外激光刻蚀粗化活化,并结合化学镀,在其表面局域制备出了导电金属铜层。研究了激光加工参量对玻璃表面微观形貌、粗糙度、刻蚀深度的影响规律,并在玻璃表面成功引入了钯元素。结果表明,当第1次紫外激光扫描速率为200mm/s、脉冲频率为100kHz、能量密度为27J/cm2~37J/cm2和填充间距在10μm左右时,玻璃表面可以获得的刻蚀深度在25μm~35μm之间,刻蚀区域的粗糙度R_a在6μm~7μm之间,此时玻璃不会开裂;而第2次激光的能量密度在9J/cm2~11J/cm2之间时（其余参量不变）,钯元素的引入实现了化学镀铜,此时铜层和玻璃之间的平均结合强度可以达到10MPa以上,铜层的体积电阻率可以达到10-6Ω·cm数量级。这是一种具有局域选择性、无需掩模、低成本、高结合强度和良好导电性的玻璃表面金属化工艺。     

Ba_4Nd_(9.33)Ti_(18)O_(54)微波介质陶瓷的微波合成及其低温烧结

采用微波加热合成了Ba4Nd9.33Ti18O54(BNT)微波介质固溶体陶瓷粉末,研究了微波加热工艺对BNT陶瓷相组成与微观形貌的影响。结果表明:微波加热相比于常规加热可以实现BNT陶瓷的低温快速合成;通过添加质量分数45%的B2O3-SiO2-CaO-MgO(BS)玻璃实现了BNT陶瓷于875℃烧结致密化。1 100℃微波合成的BNT陶瓷加BS玻璃烧结后具有最佳性能:εr=35.8,tanδ=12×10–4,σf=103.7 MPa,λ=2.576 W/(m.K)。     

A Room‐Temperature High‐Conductivity Metal Printing Paradigm with Visible‐Light Projection Lithography

Fabricating electronic devices require integrating metallic conductors and polymeric insulators in complex structures. Current metal‐patterning methods such as evaporation and laser sintering require vacuum, multistep processes, and high temperature during sintering or postannealing to achieve desirable electrical conductivity, which damages low‐temperature polymer substrates. Here reports a facile ecofriendly room‐temperature metal printing paradigm using visible‐light projection lithography. With a particle‐free reactive silver ink, photoinduced redox reaction occurs to form metallic silver within designed illuminated regions through a digital mask on substrate with insignificant temperature change (<4 °C). The patterns exhibit remarkably high conductivity achievable at room temperature (2.4 × 10⁷ S m^?1, ≈40% of bulk silver conductivity) after simple room‐temperature chemical annealing for 1–2 s. The finest silver trace produced reaches 15 µm. Neither extra thermal energy input nor physical mask is required for the entire fabrication process. Metal patterns were printed on various substrates, including polyethylene terephthalate, polydimethylsiloxane, polyimide, Scotch tape, print paper, Si wafer, glass coverslip, and polystyrene. By changing inks, this paradigm can be extended to print various metals and metal–polymer hybrid structures. This method greatly simplifies the metal‐patterning process and expands printability and substrate materials, showing huge potential in fabricating microelectronics with one system.     

Mixed Electronic and Ionic Conduction Properties of Lithium Lanthanum Titanate

With the continued increase in Li‐metal anode rate capability, there is an equally important need to develop high‐rate cathode architectures for solid‐state batteries. A proposed method of improving charge transport in the cathode is introducing a mixed electronic and ionic conductor (MEIC) which can eliminate the need for conductive additives that occlude electrolyte–electrode interfaces and lower the net additive required in the cathode. This study takes advantage of a reduced perovskite electrolyte, Li_0.33La_0.57TiO₃ (LLTO), to act as a model MEIC. It is found that the ionic conductivity of reduced LLTO is comparable to oxidized LLTO (σ_bulk = 10^?3–10^?4 S cm^?1, σ_GB = 10^?5–10^?6 S cm^?1) and the electronic conductivity is 1 mS cm^?1. The ionic transference numbers are 0.9995 and 0.0095 in the oxidized and reduced state, respectively. Furthermore, two methods for controlling the transference numbers are evaluated. It is found that the electronic conductivity cannot easily be controlled by changing O₂ overpressures, but increasing the ionic conductivity can be achieved by increasing grain size. This work identifies a possible class of MEIC materials that may improve rate capabilities of cathodes in solid‐state architectures and motivate a deeper understanding of MEICs in the context of solid‐state batteries.     

纳米添加剂对永磁铁氧体微结构与性能的影响

通过高能球磨将添加剂纳米化,研究了其对永磁铁氧体(样品)磁性能和微观结构的影响。结果表明:添加剂的平均粒度从216.448μm减小到65nm时,有效降低了磁体的熔点,提高其致密化。1190℃烧结时磁体的Br和Hcj分别从404mT、366kA·m–1提高到418mT和402kA·m–1。SEM观察样品晶粒平均粒径在1~2μm,晶粒分布更加均匀。取向度从75.2%提高到84.0%。