硅基发光材料和器件研究的进展

发光器件和集成电路都是信息技术的基础,如果将经们集成在一个芯片上,信息传输速度,存储和处理能力将得到大大提高,它将使信息技术发展到一个全新的阶段,但是,现有的集成电路是采用硅材料,而发光器件用Ⅲ－Ⅴ族化合物半导体。Ⅲ－Ⅴ族化合物半导体集成电路,虽然经过多年的研制,但至今还不成熟,因此,研究硅基发光材料和器件成为发展光电子集成的关键。本文评述了目前取得较大进展的几种主要硅基发光材料和器件成为发展光电     

硅基发光材料研究进展

硅是一种非发光材料,发展光电子集成技术必须大力发展硅基发光材料,在此基础上,研究了各类与硅平面技术兼容的发光器件和集成电路。文章综述各类硅基发光材料、发光机制的研究成果与发展动态。     

硅基纳米材料发光特性的研究进展

近年,硅基低维材料物理与工艺的研究预示,硅基光电子学将是今后半导体光电子学的一个主要发展方向,而硅基低维发光材料又将成为半导体光电子集成技术的主要基础材料。随着硅基超晶格,量子阱和多孔硅研究的不断深化以及纳米科学技术的日益发展,硅基发光材料正向纳米方向开拓。     

Si基高效率发光材料与器件的探索

发展硅基光电子学一直是人们关注追求着的一个诱人的目标，众所周知，半导体晶体管是构成微电子技术的关键基础，而发光，激光器件则将是光电子学的心脏部件，硅属间接带隙材料，发光效率至少比直接带隙的ＧａＡｓ低三个量级。探索硅基材料高效率发光的途径，已是当前科技界研究的热点，能带工程的应用为之展现出光明的前景。本文着重评述，由ＳｉＧｅ量子阱能带工程，Ｅｒ￣（３＋）发光中心离子注入掺杂工程，以及直接带隙β一ＦｅＳｉ＿２新材料工程的研究所取得的进展，并提出作者的若干初步想法的考虑。     

硅发光研究与进展

微电子技术的瓶颈和信息技术发展的需求加速了光电子学在硅基材料上实现光信息处理、光电子集成的研究,利用硅基材料制造出高质量的发光器件对光电子学以至整个信息技术均具有重要意义.由于受间接带隙能带结构的限制,天然硅材料具有很低的发光效率,不利于硅光源的实现.通过采用人工改性的方法提高硅的发光效率,多孔硅、硅纳米晶体、掺Er3+硅纳米晶和硅的受激拉曼散射均是目前可实现硅发光甚至硅激光的可行途径.回顾硅发光研究的历史进程,归纳总结了近年来可实现硅发光几种方法的原理、特点以及当前的研究进展.相信随着硅发光效率的提高及器件制备工艺的发展,硅发光研究不久将出现重大突破性成果,并有可能引起新的信息技术革命.     

Si基异质结构发光的研究现状

综述了Ｓｉ 基异质结构发光研究的现状。介绍了Ｓｉ 材料本身的本征发光、激子发光、杂质发光等特性,描述了掺Ｅｒ－ Ｓｉ 的发光、Ｓｉ 基量子结构（ 量子阱、量子点） 的光发射,重点研究ＳｉＧｅ／Ｓｉ 异质结构的发光性质。同时还对多孔Ｓｉ 发光、Ｓｉ 基发光二极管（ＬＥＤ） 与Ｓｉ 双极晶体管（ＢＪＴ） 集成、Ｓｉ 基上垂直腔面发射激光器（ＶＣＳＥＬ） 与微透镜的混合集成作了简要的介绍。     

硅基薄膜发光材料

硅是微电子技术的基础材料，硅集成技术已高度发展，但硅却是非发光材料。为了发展硅基光电子技术，人们对硅基发光材料作了多方面的探索，其中有“缺陷工程”－在硅中引入作为辐射复合中心的杂技或缺陷，使之发光。“能带结构工程”－利用量子限制效应，利用具有不同能带结构的材料组合，获得硅基发光材料。“异质外延材料”－以硅为基底外延生长具有发光性能的材料。     

硅基低维结构材料

Ｓｉ／Ｇｅ超晶格外延生长技术的发展和多孔硅发光现象的发现引起了对硅基低维结构材料的关注。本文简单综述了近年来在Ｓｉ／Ｇｅ超晶格电子态和光学性质、调制掺杂Ｓｉ／ＧｅｘＳｉ１－ｘ异质结构输运性质以及多孔发光机理等方面的研究进展。     

硅发光研究

硅发光对于在单一硅片上实现光电集成是至关重要的．本文介绍了目前已有的使硅发光的方法：掺深能级杂质，掺稀土离子，多孔硅，纳米硅以及Ｓｉ／ＳｉＯ２超晶格，讨论了两种可能的发光机制：量子限制效应和表面复合效应．最后介绍了两个硅发光器件，表明硅发光器件的前景是光明的     

纳米发光材料及器件的研究发展

纳米发光材料及相关器件是近年来国际上的一个研究热点。本文对这方面的主要研究方向如硅基纳米发光材料、纳米粉末发光材料、碳纳米管的场发射等研究进展进行了综述。这些纳米材料在光电集成、信息显示等领域具有重要的学术意义和良好的市场前景。     

硅基发光材料研究进展

阐述了等电子杂质、掺Er硅、硅基量子结构(包括量子阱、量子线和量子点)及多孔硅的发光机理,综述了90年代以来a-Si/SiO2、SiGe/Si等Si基异质结构材料的优异特性和诱人的应用前景,着重介绍了能带工程为Si基异质结构带来的新特性、新功能,重点介绍了硅基量子点的制备和发光机理,综述了半导体量子点材料的最新发展动态和发展趋势。     

Si基光子晶体的制备与器件应用

光子晶体是近十年来迅速发展起来的一种新型人工结构的功能材料。本文简要介绍了Si基光子晶体的主要特点;着重介绍了Si基光子晶体的几种主要制备方法,如精细干式蚀刻法、胶质晶体模板法、宏观多孔Si的电化学腐蚀、多光子聚合法和核壳结构纳米晶粒镶嵌法等;概要介绍了Si基光子晶体在Si基发光器件和Si基光波导器件中的应用。对目前存在的问题进行了讨论,并展望了它的未来发展趋势。     

尺寸分布优化的硅基纳米材料的制备及其光致发光特性研究

纳米材料尺度的均匀性分布是保证纳米硅材料高效发光的基本要求,而纳米材料尺度分布的不均匀性却是纳米硅材料制备过程中的常见问题.在激光烧蚀沉积纳米硅材料中采用挡板技术和背散射技术提高了材料的尺度分布的均匀性,减少了材料表面的大颗粒,有效改善了材料的发光特性,使材料的发光强度提高,且发光峰的半峰宽变窄.     

Fundamental Understanding and Facing Challenges in Structural Design of Porous Si-Based Anodes for Lithium-Ion Batteries

As one of the most electrochemical energy storage devices, lithium-ion batteries (LIBs) remain the workhorse of the energy market due to their unparalleled advantages. Remarkably, Si-based materials play a pivotal role in LIBs anodes owing to ultrahigh theoretical capacity of Si and rich natural resources. However, bulk silicon materials are difficult to meet the current commercial demand because of their low conductivity, sluggish reaction kinetics, and huge volume expansion. The construction of porous structures has been acknowledged as an effective way to solve the above issues. Herein, the delicate design of porous Si-based anode materials including synthetic strategies, the engineering of surface morphology and micro/nano-structure, and the regulation of different compositions, as well as their applications in LIBs is systematically summarized. Particularly, the fine engineering of different pore parameters for Si-based materials is on focus. Importantly, the relationship between thick electrodes and tortuosity/porosity, and the structural effect between pores and battery performance are also discussed in depth. Finally, the applications of porous Si-based anodes in full-cells and their commercial achievements are briefly described. This review is expected to provide a basic understanding and deep insight into developing porous Si-based anodes for high-energy lithium storage.     

Silicon-Based Lithium Ion Battery Systems: State-of-the-Art from Half and Full Cell Viewpoint

Lithium-ion batteries (LIBs) have been occupying the dominant position in energy storage devices. Over the past 30 years, silicon (Si)-based materials are the most promising alternatives for graphite as LIB anodes due to their high theoretical capacities and low operating voltages. Nevertheless, their extensive volume changes in battery operation causes the structural collapse of Si-based electrodes, as well as severe side reactions. In this review, the preparation methods and structure optimizations of Si-based materials are highlighted, as well as their applications in half and full cells. Meanwhile, the developments of promising electrolytes, binders and separators that match Si-based electrodes in half and full cells have made great progress. Pre-lithiation technology has been introduced to compensate for irreversible Li⁺ consumption during battery operation, thereby improving the energy densities and lifetime of Si-based full cells. More importantly, almost all related mechanisms of Si-based electrodes in half and full cells are summarized in detail. It is expected to provide a comprehensive insight on how to develop high-performance Si-based full cells. The work can help us understand what happens during the lithiation process, the primary causes of Si-based half and full cells failure, and strategies to overcome these challenges.     

Materials and Wireless Microfluidic Systems for Electronics Capable of Chemical Dissolution on Demand

Electronics that are capable of destroying themselves, on demand and in a harmless way, might provide the ultimate form of data security. This paper presents materials and device architectures for triggered destruction of conventional microelectronic systems by means of microfluidic chemical etching of the constituent materials, including silicon, silicon dioxide, and metals (e.g., aluminum). Demonstrations in an array of home‐built metal‐oxide‐semiconductor field‐effect transistors that exploit ultrathin sheets of monocrystalline silicon and in radio‐frequency identification devices illustrate the utility of the approaches.     

Silicon‐Compatible Photodetectors: Trends to Monolithically Integrate Photosensors with Chip Technology

Encouraged by the increasing requirements of intelligent equipment, silicon integrated circuit–compatible photodetectors that support single‐chip photonic–electronic systems have gained considerable progresses. Advanced materials have resulted in enhanced device performance based on traditional photovoltaic effect and photoconductive effect, and novel device designs have catalyzed new working mechanisms combing rapid photoresponse and high responsivity gain. Surprising applications are developed using monolithic photonic–electronic platforms, and the developing integration strategies keep pace with the developing complementary metal‐oxide‐semiconductor techniques as well as nonsilicon substrates. Here, the recent developments in silicon‐compatible photodetectors, both in device advances and their integration routes, are reviewed. Meanwhile, the progresses, challenges, and possible future directions in this field are discussed and concluded.     

新型共轭聚合物PDABTh／PS复合膜的光学三阶非线性研究

采用旋转涂布法在多孔硅（PS）中嵌入新型含偶氮苯与噻吩结构单元的共轭聚合物PDABTh,制备出聚合物PDABTh／PS复合膜。采用单光束反射z扫描方法分别对PS和pDABTh／PS复合膜在532nm处的非线性折射率进行TN量。实验结果表明,复合材料三阶非线性光学效应较PS得到了明显增强,为新型共轭聚合物PDABTh／P...     

Scaling planar silicon devices

The generation-over-generation scaling of critical CMOS technology parameters is ultimately bound by nonscalable limitations, such as the thermal voltage and the elementary electronic charge. Sustained improvement in performance and density has required the introduction of new device structures and materials. Partially depleted SOI, a most recent MOSFET innovation, has extended VLSI performance while introducing unique idiosyncrasies. Fully depleted SOI is one logical extension of this device design direction. Gate dielectric tunneling, device self-heating, and single-event upsets present developers of these next-generation devices with new challenges. Strained silicon and high-permittivity gate dielectric are examples of new materials that will enable CMOS developers to continue to deliver device performance enhancements in the sub-100 nm regime.