首页 | 本学科首页   官方微博 | 高级检索  
相似文献
 共查询到20条相似文献,搜索用时 15 毫秒
1.
加载横电磁传输室中的电场分布计算   总被引:1,自引:1,他引:0  
用“准静脉法”研究了当工作频率远低于截止频率时,放置于横电磁传输室中的被测物体中的电场分布。文中使用的是有限差分法,给出了在三维空间中不同介质交界面上拉普拉斯方程的差分格式。计算结果表明当把ETU放入TEMCell的中心时,EUT横截面上的电场分布是均匀的。  相似文献   

2.
姜一波  王帅  李科  陈蕾  杜寰 《半导体学报》2010,31(12):124008-5
本文提出一种基于2D泊松方程,针对RF-LDMOST结构改进的解析模型。借助此模型研究了RF-LDMOST电场分布与高掺杂的浅漂移区和低浓度p型外延层之间的关系,能清楚地从解析角度阐明p外延层厚度对电场分布的影响。ISE TCAD仿真和实验结果与解析结果吻合较好。此模型对于RF-LDMOST的理解和设计有一定价值。  相似文献   

3.
姜一波  王帅  李科  陈蕾  杜寰 《半导体学报》2010,31(12):124008-124008-5
This paper presents an improved analytical model for an RF-LDMOST structure based on the 2D Poisson equation.The derived model indicates the influence of high doped shallow drift and low doping concentration p epitaxial layer on the electric field distribution.In particular,the importance of the thickness of the p epitaxial layer for electric field distributions in RF-LDMOST are shown through MATLAB analytical results based on the model.Then ISE TCAD simulations and experiments are processed and their re...  相似文献   

4.
The angular distribution of the phase of the fields of an electric dipole with and without a sheath in a hot magnetoplasma is calculated. Like the amplitude distribution of the field, the phase distribution can also be used for estimating the electron temperature.  相似文献   

5.
Simulation of etching of a microtip’s lower electrode and deposition of a dielectric film has shown that the film undergoes a strong thinning at lateral surfaces and at the microtip’s bases. It is demonstrated that, at a microtip density of 5 × 108 cm−2, the electric field’s strength at the base of the tip is 3.5 times that at its apex, which gives rise to additional emission centers.  相似文献   

6.
Eremin  V. K.  Naletko  A. S.  Verbitskaya  E. M.  Eremin  I. V.  Egorov  N. N. 《Semiconductors》2011,45(9):1234-1241
Development of silicon edgeless detectors started in 2004 and was motivated by preparations for the total elastic and diffractive cross-section measurement (TOTEM) experiment at the Large Hadron Collider (LHC) at CERN. In the context of this experiment, it would be necessary to detect protons scattered at ultimately small angles with respect to the LHC proton beam, which brings about a limitation imposed on the maximum distance between the beam and the sensitive region of the detector. In order to solve this problem, a new type of silicon detector (edgeless detectors) was developed; these detectors have the structure, which controls the distribution of the current near the edge of the p-n junction. In this paper we report the results of studying the distribution of the potential and an electric field in the region of the cut edge in the silicon edgeless detectors; the models, which account for the obtained results, as well as their consistency with current-voltage characteristics of silicon edgeless detectors developed for the TOTEM experiment, are discussed.  相似文献   

7.
Spinodal decomposition in an electric field has been suggested as a mechanism initiating the phase separation hypothesized for memory switching in amorphous semi conductors. Here, it is shown that density fluctuations lead to a change in free energy which depends on the direction of the electric field and, hence, should cause preferentially oriented precipitation. In addition, the rate of reaction is influenced by the change of polarization with respect to composition, a contribution which is estimated to be the same order of magnitude as the ideal chemical and strain energy contributions.  相似文献   

8.
长椭球介质人头模型中的场分布   总被引:3,自引:1,他引:3  
文中给出一长椭球介质人头模型中的电磁场全波解。运用并矢格林函数和散射叠加原理 ,求解的电磁场表示为椭球矢波函数。导出了在人头模型中的耦合系数 ,最后给出了数字结果的讨论。  相似文献   

9.
A microdosimetric study of nanosecond pulsed electric fields, including dielectric dispersivity of cell compartments, is proposed in our paper. A quasi-static solution based on the Laplace equation was adapted to wideband signals and used to address the problem of electric field estimation at cellular level. The electric solution was coupled with an asymptotic electroporation model able to predict membrane pore density. An initial result of our paper is the relevance of the dielectric dispersivity, providing evidence that both the transmembrane potential and the pore density are strongly influenced by the choice of modeling used. We note the crucial role played by the dielectric properties of the membrane that can greatly impact on the poration of the cell. This can partly explain the selective action reported on cancerous cells in mixed populations, if one considers that tumor cells may present different dielectric responses. Moreover, these kinds of studies can be useful to determine the appropriate setting of nsPEF generators as well as for the design and optimization of new-generation devices.  相似文献   

10.
改善OVT内电场分布的介质包裹法   总被引:1,自引:2,他引:1       下载免费PDF全文
黄奕钒  徐启峰  陈霖扬  谭巧  谢楠 《红外与激光工程》2017,46(7):722004-0722004(8)
基于Pockels效应的光学电压传感器(Optical Voltage Transducer,OVT),运行中不可避免地存在震动、元器件连接的老化与热胀冷缩等问题,导致光学器件的相互位置产生偏移,进而影响电光晶体的内电场分布。文中以基于会聚偏光干涉原理的110 kV纵向调制的OVT为例,进行了仿真分析与实验研究,发现当入射光发生0.5的偏移或电光晶体发生1的偏移时,分别引入约0.107%和0.124%的电场积分误差。由于OVT必须满足0.2%的准确度要求,上述影响不容忽视。为此提出了介质包裹法,将Al2O3陶瓷包裹在电光晶体外部,使电场积分误差分别降低至0.001%和0.003%。实验与应用的情况表明,介质包裹法简单、实用、有效。  相似文献   

11.
An exact solution for the surface potentials produced by a dipole source surrounded by a stratified prolate (or oblate) volume conductor is given. A transmission matrix approach is used which permits the surface potentials to be calculated using a simple iterative method. The computer implementation of the method is discussed  相似文献   

12.
Modulation of the fundamental absorption edge by a high lateral electric field in a p-type In0.21Ga0.79As/GaAs heterostructure with quantum wells was studied at 4.2 K and electric fields as high as 1.9 kV/cm. The field-induced change in the symmetric part of the hole distribution function was measured.  相似文献   

13.
The effect of an electric field on the energy spectrum of a quantum well with macroscopic fluctuations is studied. The Stark shift of the quasibound states in a quantum well and three field-dependent broadening mechanisms (field-induced homogeneous broadening and broadening due to well width and depth fluctuations) are calculated in a wide range of electric fields. As an example, the effect of an electric field on the energy spectrum of electrons in a 12-nm-wide GaAs/Al0.3Ga0.7As quantum well with 5% width and depth fluctuations is determined. Fiz. Tekh. Poluprovodn. 32, 1108–1113 (September 1998)  相似文献   

14.
The electric field distribution in an automobile body must be known when developing an antenna system mounted inside the car body for mobile communication. A microwave simulation experiment was carried out in an electromagnetic anechoic chamber using 4 GHz band signals and a miniaturized automobile. The automobile model used in this simulation experiment was about 1/15 of the size of the actual automobile under consideration. A simpler box-type model with large apertures was also studied. The internal electric field distribution measured in the box model was estimated to be a combination of the resonant TEPmn modes excited in the box. which acted as a resonant cavity. The spatial and frequency dependence of the internal automobile's electromagnetic field for each model is plotted for the frequency range 3-5 GHz  相似文献   

15.
为了了解电磁波在光子晶体中的传输特性,用MATLAB与时域有限差分法把电磁波在真空与光子晶体中的传播实时可视化,并给出了场的空间静态分布.数值模拟的结果表明,禁带中的波被光子晶体控制,其能量分布在介质柱中,并观察到了电磁波局域化现象.  相似文献   

16.
《Organic Electronics》2002,3(3-4):129-141
The internal electric field distribution in a bilayer 4,4-bis[N-(1-napthyl)-N-phenylamino]-biphenyl/tris-(8-hydroxyquinoline) aluminium organic light emitting diode has been investigated experimentally using electroabsorption spectroscopy. The experimental results have been compared to those obtained from a drift–diffusion device simulation, further validating the model and highlighting the potential worth of such modelling. With the aid of the simulation, the electric field distribution can be explained in terms of charge carrier accumulation at the interface between the two organic layers, due to the HOMO and LUMO band offsets, and charge injection into the device, demonstrating the influence of contact materials on device behaviour.  相似文献   

17.
The electric field distribution in organic hetero-layer light-emitting devices based on N,N-diphenyl-N,N-bis(1-naphtyl)-1,1-biphenyl-4,4-diamine (NPB) and 8-tris-hydroxyquinoline aluminium (Alq3) has been investigated under different bias conditions using capacitance–voltage measurements. Although this method yields primarily information on the differential capacitance, the data give clear evidence for the presence of negative interfacial charges with a density of 6.8×1011e cm−2 at the NPB/Alq3 interface at large reverse bias. This leads to a jump of the electric field at the interface and a non-uniform field distribution in the hetero-layer device.  相似文献   

18.
A method is described to calculate the electric field in a Hall generator under influence of an alternating magnetic field. The problem is divided into two separate problems, the first of which describes the Hall effect while the second gives the behaviour of the eddy currents. Each of these problems can be reduced to an integral equation, which is easily solved on a digital computer. The method is illustrated for a rectangular Hall generator.  相似文献   

19.
A closed form expression is obtained for the electric field distribution that results when a voltage is impressed on a system of surface wave interdigital electrodes. The conventional assumptions of weak piezoelectric coupling and of electrodes long compared with acoustic wavelength are made. Equivalence with previously reported results derived by a spatial harmonics method is explicitly demonstrated.  相似文献   

20.
The radiation fields of an electric dipole oriented perpendicular to the magnetostatic field in a hot uniaxial plasma are considered. The behavior of the fields near the resonance cone for the perpendicular and parallel orientations are found to be similar. A procedure is shown for estimating the electron temperature and density by measurements on the characteristic angular distribution of the fields near the resonance cone.  相似文献   

设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号