共查询到20条相似文献,搜索用时 15 毫秒
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This paper presents an improved analytical model for an RF-LDMOST structure based on the 2D Poisson equation.The derived model indicates the influence of high doped shallow drift and low doping concentration p epitaxial layer on the electric field distribution.In particular,the importance of the thickness of the p epitaxial layer for electric field distributions in RF-LDMOST are shown through MATLAB analytical results based on the model.Then ISE TCAD simulations and experiments are processed and their re... 相似文献
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The angular distribution of the phase of the fields of an electric dipole with and without a sheath in a hot magnetoplasma is calculated. Like the amplitude distribution of the field, the phase distribution can also be used for estimating the electron temperature. 相似文献
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Simulation of etching of a microtip’s lower electrode and deposition of a dielectric film has shown that the film undergoes
a strong thinning at lateral surfaces and at the microtip’s bases. It is demonstrated that, at a microtip density of 5 × 108 cm−2, the electric field’s strength at the base of the tip is 3.5 times that at its apex, which gives rise to additional emission
centers. 相似文献
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Eremin V. K. Naletko A. S. Verbitskaya E. M. Eremin I. V. Egorov N. N. 《Semiconductors》2011,45(9):1234-1241
Development of silicon edgeless detectors started in 2004 and was motivated by preparations for the total elastic and diffractive
cross-section measurement (TOTEM) experiment at the Large Hadron Collider (LHC) at CERN. In the context of this experiment,
it would be necessary to detect protons scattered at ultimately small angles with respect to the LHC proton beam, which brings
about a limitation imposed on the maximum distance between the beam and the sensitive region of the detector. In order to
solve this problem, a new type of silicon detector (edgeless detectors) was developed; these detectors have the structure,
which controls the distribution of the current near the edge of the p-n junction. In this paper we report the results of studying the distribution of the potential and an electric field in the
region of the cut edge in the silicon edgeless detectors; the models, which account for the obtained results, as well as their
consistency with current-voltage characteristics of silicon edgeless detectors developed for the TOTEM experiment, are discussed. 相似文献
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J. L. Tomlinson 《Journal of Electronic Materials》1972,1(2):357-366
Spinodal decomposition in an electric field has been suggested as a mechanism initiating the phase separation hypothesized
for memory switching in amorphous semi conductors. Here, it is shown that density fluctuations lead to a change in free energy
which depends on the direction of the electric field and, hence, should cause preferentially oriented precipitation. In addition,
the rate of reaction is influenced by the change of polarization with respect to composition, a contribution which is estimated
to be the same order of magnitude as the ideal chemical and strain energy contributions. 相似文献
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Merla C Paffi A Apollonio F Leveque P d'Inzeo G Liberti M 《IEEE transactions on bio-medical engineering》2011,58(5):1294-1302
A microdosimetric study of nanosecond pulsed electric fields, including dielectric dispersivity of cell compartments, is proposed in our paper. A quasi-static solution based on the Laplace equation was adapted to wideband signals and used to address the problem of electric field estimation at cellular level. The electric solution was coupled with an asymptotic electroporation model able to predict membrane pore density. An initial result of our paper is the relevance of the dielectric dispersivity, providing evidence that both the transmembrane potential and the pore density are strongly influenced by the choice of modeling used. We note the crucial role played by the dielectric properties of the membrane that can greatly impact on the poration of the cell. This can partly explain the selective action reported on cancerous cells in mixed populations, if one considers that tumor cells may present different dielectric responses. Moreover, these kinds of studies can be useful to determine the appropriate setting of nsPEF generators as well as for the design and optimization of new-generation devices. 相似文献
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基于Pockels效应的光学电压传感器(Optical Voltage Transducer,OVT),运行中不可避免地存在震动、元器件连接的老化与热胀冷缩等问题,导致光学器件的相互位置产生偏移,进而影响电光晶体的内电场分布。文中以基于会聚偏光干涉原理的110 kV纵向调制的OVT为例,进行了仿真分析与实验研究,发现当入射光发生0.5的偏移或电光晶体发生1的偏移时,分别引入约0.107%和0.124%的电场积分误差。由于OVT必须满足0.2%的准确度要求,上述影响不容忽视。为此提出了介质包裹法,将Al2O3陶瓷包裹在电光晶体外部,使电场积分误差分别降低至0.001%和0.003%。实验与应用的情况表明,介质包裹法简单、实用、有效。 相似文献
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An exact solution for the surface potentials produced by a dipole source surrounded by a stratified prolate (or oblate) volume conductor is given. A transmission matrix approach is used which permits the surface potentials to be calculated using a simple iterative method. The computer implementation of the method is discussed 相似文献
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V. Ya. Aleshkin D. M. Gaponova V. I. Gavrilenko Z. F. Krasil’nik D. G. Revin B. N. Zvonkov E. A. Uskova 《Semiconductors》2000,34(9):1073-1078
Modulation of the fundamental absorption edge by a high lateral electric field in a p-type In0.21Ga0.79As/GaAs heterostructure with quantum wells was studied at 4.2 K and electric fields as high as 1.9 kV/cm. The field-induced change in the symmetric part of the hole distribution function was measured. 相似文献
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The effect of an electric field on the energy spectrum of a quantum well with macroscopic fluctuations is studied. The Stark
shift of the quasibound states in a quantum well and three field-dependent broadening mechanisms (field-induced homogeneous
broadening and broadening due to well width and depth fluctuations) are calculated in a wide range of electric fields. As
an example, the effect of an electric field on the energy spectrum of electrons in a 12-nm-wide GaAs/Al0.3Ga0.7As quantum well with 5% width and depth fluctuations is determined.
Fiz. Tekh. Poluprovodn. 32, 1108–1113 (September 1998) 相似文献
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The electric field distribution in an automobile body must be known when developing an antenna system mounted inside the car body for mobile communication. A microwave simulation experiment was carried out in an electromagnetic anechoic chamber using 4 GHz band signals and a miniaturized automobile. The automobile model used in this simulation experiment was about 1/15 of the size of the actual automobile under consideration. A simpler box-type model with large apertures was also studied. The internal electric field distribution measured in the box model was estimated to be a combination of the resonant TEPmn modes excited in the box. which acted as a resonant cavity. The spatial and frequency dependence of the internal automobile's electromagnetic field for each model is plotted for the frequency range 3-5 GHz 相似文献
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《Organic Electronics》2002,3(3-4):129-141
The internal electric field distribution in a bilayer 4,4′-bis[N-(1-napthyl)-N-phenylamino]-biphenyl/tris-(8-hydroxyquinoline) aluminium organic light emitting diode has been investigated experimentally using electroabsorption spectroscopy. The experimental results have been compared to those obtained from a drift–diffusion device simulation, further validating the model and highlighting the potential worth of such modelling. With the aid of the simulation, the electric field distribution can be explained in terms of charge carrier accumulation at the interface between the two organic layers, due to the HOMO and LUMO band offsets, and charge injection into the device, demonstrating the influence of contact materials on device behaviour. 相似文献
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The electric field distribution in organic hetero-layer light-emitting devices based on N,N′-diphenyl-N,N′-bis(1-naphtyl)-1,1′-biphenyl-4,4′-diamine (NPB) and 8-tris-hydroxyquinoline aluminium (Alq3) has been investigated under different bias conditions using capacitance–voltage measurements. Although this method yields primarily information on the differential capacitance, the data give clear evidence for the presence of negative interfacial charges with a density of 6.8×1011e cm−2 at the NPB/Alq3 interface at large reverse bias. This leads to a jump of the electric field at the interface and a non-uniform field distribution in the hetero-layer device. 相似文献
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G. de Mey 《Solid-state electronics》1974,17(9):977-979
A method is described to calculate the electric field in a Hall generator under influence of an alternating magnetic field. The problem is divided into two separate problems, the first of which describes the Hall effect while the second gives the behaviour of the eddy currents. Each of these problems can be reduced to an integral equation, which is easily solved on a digital computer. The method is illustrated for a rectangular Hall generator. 相似文献
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《Electron Devices, IEEE Transactions on》1971,18(1):66-69
A closed form expression is obtained for the electric field distribution that results when a voltage is impressed on a system of surface wave interdigital electrodes. The conventional assumptions of weak piezoelectric coupling and of electrodes long compared with acoustic wavelength are made. Equivalence with previously reported results derived by a spatial harmonics method is explicitly demonstrated. 相似文献
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The radiation fields of an electric dipole oriented perpendicular to the magnetostatic field in a hot uniaxial plasma are considered. The behavior of the fields near the resonance cone for the perpendicular and parallel orientations are found to be similar. A procedure is shown for estimating the electron temperature and density by measurements on the characteristic angular distribution of the fields near the resonance cone. 相似文献