Microwave Sintering of Base-Metal-Electroded BaTiO3 Capacitor Materials Co-Doped with MgO/Y2O3 Additives

In this paper, we systematically investigated the effect of microwave sintering parameters on the characteristics of BaTiO₃ capacitor materials co-doped with Y₂O₃/MgO species. It is observed that the granular structure of the materials is relatively insensitive to the sintering temperature and soaking time such that the BaTiO₃ capacitor materials possessing X7R dielectric constant-temperature (K-T) characteristics can be obtained in a wide range of sintering conditions. TEM examinations reveal that the detailed microstructure of these materials is extremely complicated. The unique K-T properties of these materials are ascribed to the duplex structure of the samples, viz. fine grains of paraelectric phase and large grains of ferroelectric phase.     

Copper Cofire X7R Dielectrics and Multilayer Capacitors Based on Zinc Borate Fluxed Barium Titanate Ceramic

Copper cofired dielectrics may give new opportunities for high temperature capacitors. To demonstrate feasibility, BaTiO₃ has been formulated into X7R dielectrics with copper inner electrodes. This requires the development of a formulation that permits sintering at temperatures below 1000°C, and then firing in a reducing environment in atmospheres pO₂ 10^–8 atms. ZnO—B₂O₃ chemistries were explored with additional dopants to modify densification and the temperature coefficient of capacitance of the BaTiO₃ dielectric anomaly. X7R characteristics with relative dielectric permittivities 2750 and tan 0.01 at 1 kHz were obtained at room temperature. Multilayer capacitors were fabricated in 3.2 mm × 1.6 mm size multilayers with an acrylic binder system and oxidation resistive copper inner electrodes.     

微波烧结Ni-Zn铁氧体软磁材料的初步研究

采用微波高温烧结炉对Ni-Zn铁氧体软磁材料进行公斤级烧结工艺研究.结果表明,运用微波烧结可以实现Ni-Zn铁氧体材料烧结过程中的快速升温,短时保温,不仅大大降低能源消耗,缩短工艺周期,而且提高了Ni-Zn铁氧体软磁材料物理及机械性能.     

旋磁铁氧体材料的微波烧结及在环行器中的应用研究

对微波烧结旋磁铁氧体材料进行了初步实验,检测和分析了烧成的材料和由其制成的环行器的主要技术参数,并与传统烧结材料进行了对比.结果表明,微波烧结旋磁铁氧体材料介电损耗较低,用其制作的环行器满足设计要求,损耗减小.该烧结方法具有一定的优越性.     

Development of Translucent Aluminum Nitride (AIN) Using Microwave Sintering Process

Pure aluminum nitride (AIN) has been successfully sintered to highly translucent form by microwave sintering at 1850°C with a dwelling time of 30–60 minutes. The results showed that the sintering temperature should be at least 1850°C or higher to get reasonable translucency in the AIN sample by the microwave sintering process. On the other hand, the conventional sintering method requires much longer sintering time to obtain a translucent AIN ceramics.     

An Investigation of Capacitors for Flying Capacitor Converters

Multilevel converters can essentially reduce harmonics even when their switching frequency is low. Among the various topologies of the multilevel converters, flying capacitor converters are considered to be promising converters for realizing high power density. However, the main circuit of the flying capacitor converters has many capacitors. Therefore, in this study, the volume of the capacitors in the flying capacitor converters is determined by taking into consideration the allowable ripple voltage and temperature rise in the capacitor. © 2013 Wiley Periodicals, Inc. Electr Eng Jpn, 186(4): 81–91, 2014; Published online in Wiley Online Library ( wileyonlinelibrary.com ). DOI 10.1002/eej.22361     

Microwave Dielectric Properties of Ferroelectric Pb(Zr1 − x Ti x )O3 Thin Films Using Interdigital Capacitors

Ferroelectric Pb(Zr_{1 ? x} Ti _x )O₃ (PZT) films were deposited on (001) MgO single crystals using sol-gel method. Structural properties and surface morphologies of PZT films were investigated using an X-ray diffractometer and a scanning electron microscopy, respectively. The dielectric properties of PZT films were investigated with the dc bias field of 0–135 kV/cm using interdigitated capacitors (IDC) which were fabricated on PZT films using a thick metal layer by photolithography and etching process. The small signal dielectric properties of PZT films were calculated by a modified conformal mapping method with low and high frequency data, such as capacitance measured by an impedance gain/phase analyzer at 100 kHz and reflection coefficient (S-parameter) measured by a HP 8510C vector network analyzer at 1–20 GHz. The IDC on PZT films exhibited about 67% of capacitance change with an electric field of 135 kV/cm at 10 GHz. These PZT thin films can be applied to tunable microwave devices such as phase shifters, tunable resonators and tunable filters.     

Crystal and Defect Chemistry of Rare Earth Cations in BaTiO3

This study revisits the issue of rare earth cation substitutions into barium titanate. Analysis based upon crystal chemistry, defect chemistry and metastable states is presented to aid interpretation of experimental data. Recent detailed and highly precise X-ray powder diffraction and Electron Paramagnetic Resonance experiments performed on samples produced with different A/B ratios and fired under different oxygen partial pressure conditions give rise to new insights into the material. Specifically, the site occupancy and the valence states for the rare-earth dopants in barium titanate are considered. Earlier work is also reviewed and compared to the studies performed here. Collectively a classification of the various types of behavior observed for the rare-earth series in barium titanate is presented.     

微波烧结La掺杂CaCu3Ti4O12陶瓷的结构、介电和压敏性能

采用微波快速烧结法制备了La掺杂CaCu3Ti4O12致密陶瓷,研究了其结构、介电和压敏性能。所有Ca1-3x/2LaxCu3Ti4O12陶瓷均形成了CCTO晶相,但是La含量低于0.10时存在CuO第二相。随着La含量增加,Ca1-3x/2LaxCu3Ti4O12陶瓷介电常数随频率和温度变化越来越小;压敏电压逐渐增大,非线性系数也明显改善。其中La含量x=0.15时,Ca1-3x/2LaxCu3Ti4O12陶瓷具有良好的压敏性能:压敏电场强度为5.25 kV/cm,非线性系数为26.3。     

提高金属化薄膜电容器的脉冲电流处理能力

喷金是金属化薄膜电容器生产过程中的重要关键工艺,喷金质量的好坏直接影响着电容器的性能和寿命。基于喷金机的工作原理,对喷金距离、喷金颗粒、压缩空气等方面进行研究,并给出了提高喷金质量的方法。最后通过实验和批量生产来验证了这一改善的效果,事实证明工艺改进确实大大提高了薄膜电容器的脉冲电流处理能力,同时还节约了喷金料,降低了生产成本。     

提高金属化薄膜电容器的脉冲电流处理能力

喷金是金属化薄膜电容器生产过程中的重要关键工艺,喷金质量的好坏直接影响着电容器的性能和寿命。基于喷金机的工作原理,对喷金距离、喷金颗粒、压缩空气等方面进行研究,并给出了提高喷金质量的方法。最后通过实验和批量生产来验证了这一改善的效果,事实证明工艺改进确实大大提高了薄膜电容器的脉冲电流处理能力,同时还节约了喷金料,降低了生产成本。     

K0.5Na0.5NbO3掺杂对BaTi03陶瓷介电性能的影响

采用固相反应法制备了（K0.5Na0.5）Nb03-BaTiO3。体系陶瓷。借助XRD、SEM和阻抗分析仪研究了掺杂（K0.5Na0.5）Nb03（简写为KNN）对陶瓷微结构及介电性能的影响。结果表明,掺杂KNN的陶瓷均呈单一的钙钛矿结构;掺杂KNN能促进陶瓷的烧结和提高陶瓷的致密度。,BaTiO,陶瓷在高温端的电容变化率随KNN量的增加显著减小。陶瓷晶粒尺寸随KNN的增加（KNN掺杂量≤3m01％）逐渐变小。掺杂3mol%6和5m01％KNN的BaTiO3陶瓷满足EIAX7R特性。     

Donor-Acceptor Charge Complex Formation in Barium Titanate Ceramics: Role of Firing Atmosphere

BaTiO₃ ceramics containing Mn acceptors and various Mo, W and Nb donor dopants have been fired in reducing atmosphere and re-oxidized in N₂/O₂. In single Mn-doped ceramics, Mn²⁺ is completely oxidized to Mn³⁺; in N₂ containing 50 ppm O₂ at T > 800°C. Changes of the Curie point and sample length under reduction and re-oxidation have been detected using dielectric and thermomechanical measurements. Charge compensation and complex formation between acceptors and donors have been observed. In donor-acceptor charge complexes, Mn²⁺ cannot be oxidized.     

Dysprosium Doped Dielectric Materials for Sintering in Reducing Atmospheres

Substitution of Dy rare earth ions was studied in Ba(Ti,Zr)O₃ dielectric materials, using thermogravimetry, X-ray diffraction and dielectric measurements. Dy³⁺ ions enter both the A- and the B-sites of the perovskite structure, however, the solubility on B-sites is up to 9 mol %, whereas it is only 2.5 mol% on A-sites. Dy can be easily shifted from A- to B-sites and back, using Ba or Ti excess in the material. Dy³⁺ on B-sites is a strong electron acceptor. Dy doped dielectric materials are cofired with Ni electrodes in reducing atmosphere to highly insulating BME multilayer capacitors.     

Microstructure of X7R Type Base-Metal-Electroded BaTiO3 Capacitor Materials Co-Doped with MgO/Y2O3 Additives

Detailed microstructure of MgO/Y₂O₃ co-doped BaTiO₃ materials were examined using transmission electron microscopy (TEM). For the 1250_C-sintered BaTiO₃ samples possessing flat K-T characteristics, which meet the X7R specification, the granular structure is complicated. Most of the grains are very small ( 150 nm) and are highly strained. The small grains contain large proportion of Y₂O₃ species and are paraelectric, whereas the large grains contain Y₂O₃ species unevenly distributed and are of core-shell structure. In contrast, for the 1300C-sintered BaTiO₃ samples, which have K-T properties slightly off the X7R specification, the grains grew larger to around 300 nm. The core-shell structured grains are seldom observed. Apparently, it is the existence of such a non-equilibrium core-shell microstructure, which renders the dielectric properties of the BaTiO₃ materials extremely sensitive to the processing parameters.     

静电除尘极配方式对烧结机头微细粉尘收集效率的影响分析

为了寻找烧结机头烟气中微细颗粒物超低排放的方法,实验采用圆线、芒刺电晕线和传统、开孔型收尘极板进行组合,构成多种极配结构.通过分析不同极配结构下的收集效率及粉尘粒径分布,研究了影响烧结烟气中微细颗粒物捕集效果的因素.结果表明:粉尘粒径分布、流场结构是影响除尘效果的重要因素;开孔型收尘极板改变了放电空间的气流分布,实现了...     

Estimation of the location of dielectrics using a capacitor with widely spaced parallel electrodes and additional electrodes

We have investigated the estimation of the location of a dielectric from the capacitance measured with widely spaced measurement electrodes provided with a shield and additional electrodes. In order to investigate the estimation method, a numerical technique was developed for calculating the capacitance between widely spaced measurement electrodes by finite element analysis. We discuss the new method for estimation of the locations of two dielectrics by using a capacitor with widely spaced parallel electrodes and additional electrodes. © 2010 Wiley Periodicals, Inc. Electr Eng Jpn, 172(3): 8–17, 2010; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/eej.20938     

The Effect of Stress on the Microwave Dielectric Properties of Ba0.5Sr0.5TiO3 Thin Films

Single phase, (1 0 0) epitaxial Ba_0.5Sr_0.5TiO₃ (BST) films have been deposited onto (1 0 0) LaAlO₃ and MgO substrates by pulsed laser deposition (PLD). The capacitance and dielectric losses of as-deposited and annealed films have been measured from 1–20 GHz as a function of electric field (0–80 kV/cm) at room temperature. The dielectric properties are strongly affected by the substrate type, post-deposition annealing time (6 h) and temperature (1200°C). For epitaxial BST films deposited onto MgO, it is observed that, after a post-deposition anneal the dielectric constant and the dielectric loss decreases. For epitaxial BST films deposited onto LAO, a post-deposition anneal (1000°C) results in an increase in the dielectric constant and an increase in the dielectric loss. The dc electric field induced change in the dielectric constant tends to increase with the dielectric constant and is largest for as-deposited films on MgO and post-deposited annealed films on LAO. In general, for epitaxial BST films, a large electric field effect is observed in films that have a large dielectric loss and a small electric field effect in films that have a low dielectric loss. High resolution X-ray diffraction measurements indicate that deposited film exhibit a significant tetragonal distortion which is strongly affected by a by a post deposition anneal. The observed differences in dielectric properties of the epitaxial BST films on MgO and LAO are attributed to the differences in film stress which arise as a consequence of the lattice mismatch between the film and the substrate and the differences in the thermal coefficient of expansion between the film and the substrate. A thin amorphous buffer layer of BST has been used to relieve stress induced by the lattice mismatch between the film and the substrate. Unlike epitaxial films, stress relieved films do not show an inverse relationship between dielectric tuning and Q (1/tan) and may be superior materials for tunable microwave devices.     

Microwave Dielectric Properties of CuO-V<Subscript>2</Subscript>O<Subscript>5</Subscript>-Bi<Subscript>2</Subscript>O<Subscript>3</Subscript>-Doped ZnNb<Subscript>2</Subscript>O<Subscript>6</Subscript> Ceramics with Low Sintering Temperature

Microwave dielectric properties of low temperature sintering ZnNb₂O₆ ceramics doped with CuO-V₂O₅-Bi₂O₃ additions were investigated systematically. The co-doping of CuO, V₂O₅ and Bi₂O₃ can significantly lower the sintering temperature of ZnNb₂O₆ ceramics from 1150 to 870C. The secondary phase containing Cu, V, Bi and Zn was observed at grain boundary junctions, and the amount of secondary phase increased with increasing CuO-V₂O₅-Bi₂O₃ content. The dielectric properties at microwave frequencies (7–9 GHz) in this system exhibited a significant dependence on the relative density, content of additives and microstructure of the ceramics. The dielectric constant ( _r) of ZnNb₂O₆ ceramics increased from 21.95 to 24.18 with increasing CuO-V₂O₅-Bi₂O₃ additions from 1.5 to 4.0 wt%. The quality factors (Q× f) of this system decreased with increasing CuO-V₂O₅-Bi₂O₃ content and ranged from 36118 to 67100 GHz for sintered ceramics, furthermore, all Q× f values of samples with CuO-V₂O₅-Bi₂O₃ additions are lower than that of un-doped ZnNb₂O₆ ceramics sintered at 1150C for 2 h. The temperature coefficient of resonant frequency ( _f) changed from –33.16 to –25.96 ppm/C with increasing CuO-V₂O₅-Bi₂O₃ from 1.5 to 4.0 wt%