Effect of ZnO-B<Subscript>2</Subscript>O<Subscript>3</Subscript> glass addition on the microwave dielectric properties of BaO-Nd<Subscript>2</Subscript>O<Subscript>3</Subscript>-TiO<Subscript>2</Subscript>-Bi<Subscript>2</Subscript>O<Subscript>3</Subscript> system

The effect of ZnO-B₂O₃(ZB) glass addition on the sintering behavior, microstructures and microwave dielectric properties of BaO-Nd₂O₃-TiO₂-Bi₂O₃ (BNTB) system was investigated with the aid of X-ray diffraction, scanning electron microscopy and capacitance meter. It is found that the ZB glass addition, acting as a sintering aid, can effectively lower the sintering temperature of BNTB system to 850 °C. The dielectric constant of BNTB-ZB ceramics increases with the increase of soaking time and the value of dielectric loss decreased with increasing soak time. The optical dielectric properties at 1 GHz of ɛ=74, tan δ=4×10⁻⁴, and TCC=25 ppm/°c were obtained for the BNTB system doped with 25 wt% ZB glass sintered at 850 °C for 2 h, representing that the BNTB-ZB ceramics could be promising for multilayer low temperature co-fired ceramics applications.     

Effect of Al<Subscript>2</Subscript>O<Subscript>3</Subscript> content on residual stress and properties of CAS glass-ceramics

The structure and properties of the glass-ceramics were tested with X-ray diffraction testing instrument,correlative software,and other modern testing means.Then the effect of Al2O3 content on internal stresses in CaO-Al2O3-SiO2 glass-ceramics was studied deeply.In order to study the relationship of Al2O3 to the residual stress of CaO-Al2O3-SiO2 glass-ceramics,X-ray diffraction ＂sin2ψ＂ was used.The means utilized the x radial incidence produced from cathode radial tube,and took the space between crystals as measurement of strain.When the stresses produced,the space between crystals changed and the diffraction peak moved during Bragg diffraction.The magnitude of movement is related to the stresses.The experimental results show the residual stress is considerably high and Al2O3 can influence the mechanical properties of this material hugely.     

Dielectric Properties of B2O3 Doped MgTiO3-CaTiO3 System Ceramics

The dielectric ceramics with a main crystal phase of MGTiO3 and additional crystal phase of CaTiO3 were prepared by the conventional electronic ceramics technology .the strucures of MgTiO3 are ilmenitetype,and belong to hexagonal syngony.the ratio of MgTiO3 to Ca TiO3 doping on the dielectric properties of MGTiO3-CaTiO3(MCT)ceranics were inrestigated.the addition of B2O3 decreases the sintering temperatnre and results in rapid desification without obrious negative effect on the Q values of the system(Q=1/tan ).B2O3 exists as liquid phase in the sintering process,promoting the reactions as a singering agent.     

Low-temperature sintering and microwave dielectric properties of Ba<Subscript>2</Subscript>Ti<Subscript>3</Subscript>Nb<Subscript>4</Subscript>O<Subscript>18</Subscript> ceramics

The effects of CuO and H3BO3 additions on the low-temperature sintering,microstructure,and microwave dielectric properties of Ba2Ti3Nb4O18 ceramics were investigated.The addition of less amount of CuO (< 1 wt%) considerably facilitated the densification of Ba2Ti3Nb4O18 ceramics.Appropriate addition of H3BO3 (< 3.5 wt%) remarkably improved the microwave dielectric properties of ceramics.The addition of H3BO3 and CuO successfully reduced the sintering temperature of Ba2Ti3Nb4O18 ceramics from 1300 to 1050 ℃.B...     

Structure and dielectric properties of ZnO and Nb<Subscript>2</Subscript>O<Subscript>5</Subscript> doped BaO-TiO<Subscript>2</Subscript> system microwave ceramics

The microwave dielectric properties and microstructure of BaTi4.3ZnyO9.6＋y ＋0.02 mol% SnO2＋0.01 mol% MnCO3＋x mol% Nb2O5（x=0-0.05, y=0-0.08） system ceramics were studied as a function of the amount of ZnO and Nb2O5 doped. Addition of （y=0-0.05） ZnO and （x=0-0.025） Nb2O5 enhanced the reactivity and decreased the sintering temperature effectively. It also increased the dielectric constant ε r and quality factor Q（=1/tan 8） of the system due to the substitution of Ti^4＋ ions with incorporating Zn^2＋and Nb^5＋ ions, which was analyzed by the reaction ZnO＋Nb2O5＋ 3 TiTxTi →ZnTi＋ 2NbTi＋3TiO2. When the system doped with （y=0.05） ZnO and （x=0.025） Nb205 were sintered at 1 160 ℃ for 6 h, the εr. Qf0 value and rfwere 36.5, 42 000 GHz, and＋1.8 ppm/℃, respectively, at 5 GHz.     

Investigation on phase evolution of the ZnO-B<Subscript>2</Subscript>O<Subscript>3</Subscript>-SiO<Subscript>2</Subscript> glass ceramics

ZnO-B₂O₃-SiO₂-Al₂O₃-Na₂O glass doped with nucleating agent TiO₂ was prepared with melting-quenching method and the effect of nucleating agent on the crystallization behavior and phase evolution of this glass was investigated by differential thermal analysis (DTA), X-ray diffraction (XRD), and scanning electron microscopy (SEM). The experimental results show that the glass transition temperature and the first crystallization temperature decrease from 630 °C and 765 °C to 595 °C and 740 °C, respectively, with introduction of TiO₂ into glass. There is no diffraction peaks in the XRD pattern but it is no longer transparent for the base glass without nucleating agent after heat treatment, which suggests the serious phase separation occurred, and the observation by SEM indicates that the phase separation is developed by nucleation and growth mechanism. However, there are two different crystals ZnAl₂O₄ and NaAlSiO₄ present in the glass containing TiO₂ after heat treating at 575 °C for 2 h and 740 °C for 6 h, respectively. What is interesting is that NaAlSiO₄ disappears as the crystallization time at 740 °C increases from 6 h to 12 h, and more ZnAl₂O₄ crystal is formed, namely, the further formation of ZnAl₂O₄ is at cost of NaAlSiO₄ with increasing crystallization time. And observation of the morphology of glass ceramics shows great difference with increasing crystallization time. Moreover, the ability of ZnO-B₂O₃-SiO₂-Al₂O₃-Na₂O glass ceramics against attacking of 1M HCl solution is increased by the crystals precipitated in heat treatment process.     

Effects of NaNbO3-Co2O3 Co-additive on the Properties of PZN-PZT Ceramics

NaNbO3-Co2O3 co-added PZN-PZT （PZCNNT） ceramics were prepared using conventional solid state reaction. The piezoelectric and dielectric properties were measured. The experimental results show that the addition of 0.3mo1% Co2O3 leads to low dielectric loss （tgδ） in PZCNNT ceramics and the proper addition of NaNbO3 not only improves piezoelectric properties but also decreases intensively dielectric loss and mechanical loss. The optimal ceramic having d33=310 pC/N, kp=0.59, εr=985, tgδ=0.0034, Qm=1380 was obtained.     

Effect of temperature on polishing and flatting time of float-formed Li<Subscript>2</Subscript>O-Al<Subscript>2</Subscript>O<Subscript>3</Subscript>-SiO<Subscript>2</Subscript> glass

Li₂O-Al₂O₃-SiO₂ glass prepared from traditional melting and cooling process was investigated. The surface characteristic of LAS glass was studied by simulating tin bath with different temperature and time, and the effect of surface tension/viscosity ratio on flatting time was analyzed. The results demonstrated that LAS glass can polish effectively when polishing at 1 300 for 8 °C min, and the optimum flatting and polishing temperature was 1 250–1 300 °C.     

Effect of matrix composition on physical properties of Al<Subscript>3</Subscript>CON in-situ reaction reinforced corundum composite

60% white corundum used for aggregate, 5% aluminium powder for fixed additions and 35% various additives for matrix were prepared for specimens 1#,2#,3#. They were mixed uniformly with the suitable resin as a binder and pressed under pressure of 315 ton forging press, then dried at 200℃ for 24 h. Effects of various additives on 1500 ℃×2 h creep properties of Al3CON reinforced corundum composite were researched. The experimenal results show that creep coefficients of specimens 1#,2#,3# at 1500 ℃×2 h are 1.4×10^- 4, -9.4×10^-4, -22.6×10^-4, respectively. Crushing strength of the slide plate added with suitable additive A after fired at 1500 ℃ ×3 h reaches to 225 MPa, the creep rate is positive all the time from 0% to 0.014% at 1500 ℃ for 2 h. The microstructure result analysis shows that reinforced phases of Al3CON fiber composite have been formed after fired with Al powder in coke at high temperatures for specimen 1#, and the strength of the composite is increased. The hot modulus of rupture is up to 59 MPa at 1400 ℃ and the RUL is obviously higher than that at 1700 ℃. Its service life is two times as that of Al2O3-C slide plate when used in the process of pouring steel. The mechanism of creep rate resistance of the composites can be discovered by means of SEM and EDAX analysis. It is concluded that the active Al3CON and Al2O3 multiphases that were formed by N2 in gas, C, Al and Al2O3 inside the matrix of the composites during in-situ reaction,which gives the composites outstanding creep rate resistance for the dense zone resuiting from Al3CON oxidation that inhibits contraction at the high temperature. Besides, the matrix will turn into the multiphase with high refractoriness, N content and its Al3CON reinforced fiber will further increase accordingly. In addition, Al3CON formed by Al2O3 and C, Al in the matrix with N2 in gas will inhibit the creep rate and also greatly improve the creep rate resistance of the composites.     

Microstructure and microwave dielectric properties of CaO-B2O3-SiO2 glass ceramics with various B2O3 contents

The effects of B2O3 addition on both the sintering behavior and microwave dielectric properties of CaO-B2O3-SiO2 (CBS) glass ceramics were investigated by Fourier transform infrared spectroscopy (FTIR),X-ray diffractometry (XRD) and scanning electron microscopy (SEM).The results show that the increasing amount of B2O3 causes the increase of the contents of [BO3],[BO4] and [SiO4],which deduces the increase of CaB2O4 and α-SiO2 and the decrease of CaSiO3 correspondingly.No new phase is observed throughout the...     

Ferroelectric properties of Bi<Subscript>4</Subscript>Zr<Subscript>0.5</Subscript>Ti<Subscript>2.5</Subscript>O<Subscript>12</Subscript> thin films prepared on LaNiO<Subscript>3</Subscript> bottom electrode by sol-gel method

The Bi4Zr0.5Ti2.5O12 (BZT) thin films were fabricated on the LaNiO3 bottom electrode using sol-gel method. The structure and morphology of the films were characterized using X-ray diffraction, AFM and SEM. The results show that the films have a perovskite phase and dense microstructure. The 2Pr and 2Vc of the Pt/BZT/LaNiO3 capacitor are 28.2 μC/cm2 and 14.7 V respectively at an applied voltage of 25 V. After the switching of 1×1010 cycles, the Pr value decreases to 87% of its pre-fatigue values. The dielectric constant (ε) and the dissipation factor (tanδ) of the BZT thin films are about 204 and 0.029 at 1 kHz, respectively. The films show good insulating behavior according to the test of leakage current. The clockwise C-V hysteresis curve observed shows that the Pt/BZT/LaNiO3 structure has a memory effect because of the BZT film's ferroelectric polarization.     

Phase structure and electrical properties of La<Subscript>2</Subscript>O<Subscript>3</Subscript>-doped BiInO<Subscript>3</Subscript>-PbTiO<Subscript>3</Subscript> ceramics with high curie temperature

The phase structure and electrical properties of pure and La2O3-doped Bi-InO3-PbTiO3 （BI-PT） ceramics were studied respectively. In （1 -x）BI-xPT （x=0.72-0.80） ceramics, the stability of tetragonal phase increased with increasing x, and pure perovskite structure was obtained for x=-0.80 ceramics. The phase transition temperature range was between 575 ℃ and 600 ℃ for x=0.72-0.80 ceramics, higher than that of PT （-490 ℃）. The c/a ratio almost linearly decreased with increasing La2O3 content in x-0.80 ceramics. It is believed that Pb^2＋ vacancies were formed by La^3＋ substituting Pb^2＋ in La2O3-doped BI-PT ceramics. Tc shifted to lower temperature by 30 ℃/mol% La2O3. The maximum dielectric constant 8557 around 559 ℃ was exhibited in 0.5mol%-doped BI-0.80PT ceramics. La2O3-doped ceramics could be poled resulting from decreasing of c/a ratio and improving of dielectric loss and resistivity. The maximum piezoelectric coefficient d33 was 12 pC/N for 2mol%-doped BI-0.80PT ceramics.     

Fluxing Agents on Ceramification of Composites of MgO-Al<Subscript>2</Subscript>O<Subscript>3</Subscript>-SiO<Subscript>2</Subscript>/Boron Phenolic Resin

Fluxing agents of zinc borate, antimony oxide, galss frit A and glass frit B, with different melting or softening point temperatures, were added into MgO-Al₂O₃-SiO₂/boron phenol formaldehyde resin (MAS/BPF) composites to lower the formation temperature of eutectic liquid phase and promote the ceramification of ceramifiable composites. The effects of fluxing agents on the thermogravimetric properties, phase evolution, and microstructure evolution of MAS / BPF composites were characterized by TG-DSC, XRD and SEM analyses. The results reveal that the addition of a fluxing agent highly reduces the decomposition rate of MAS / BPF composites. Fluxing agents lower the formation temperatures of liquid phases of ceramifiable MAS / BPF composites obviously, and then promote the ceramification and densification process. The final residues of composites are ceramic surrounded by large amount of glass phases.     

Influences of heat treatments on crystallization in SiO<Subscript>2</Subscript>-Al<Subscript>2</Subscript>O<Subscript>3</Subscript>-MgO-K<Subscript>2</Subscript>O-F glass-ceramics

Five kinds of heating treatment processing were chosen according to the experiment result of differential scanning calorimeter to prepare SiO2-Al2O3-MgO-K2O-F glass ceramics samples.The effects of heat treatment processing on the crystallization of these samples were explored by X-ray diffraction and scanning electron microscopy techniques.The results indicate that phase separations can occur in the bulk regions of the glass sample when holding at 670 ℃ for 3 h.The phase separation can accelerate the precip...     

Effect of the silicon powder content on the properties of Al<Subscript>2</Subscript>O<Subscript>3</Subscript>-SiC-Me composites

By means of transient plastic phase process, the Al₂O₃-SiC-Me composites were produced throungh adding metal aluminium and silicon-powder to Al₂O₃-SiC materials. Under the condition of the same content of silicon and aluminium mixed-powder, the effect of silicon powder addition on properties of Al₂O₃-SiC-Me composites was studied by means of XRD and EPMA analyses in the temperature range of 300°–1600°C. The results indicated that the content of metal phase in the sample at 1600°C increases with increasing silicon powder content. At the same time, when the temperature is lower than 1100°C, the strength of samples gradually increases with increasing temperature. However when the temperature is higher than 1100°C, the strength of samples gradually decreases with increasing temperature, and this change is very small. The results also indicated that at the same sintering temperature, the sample with 6% silicon powder has the maximum strength. Supported by the Chen Yunbo Academician Fund (Grant No. 2007CY021)     

Structure and Electric Properties of （1-x）（Bi1/2Na1/2） TiO3-xBaTiO3 Systems

The structural, dielectric and piezoelectric properties of （1-x）（Bi1/2Na1/2） TiO3-xBaTiO3 ceramics were investigated for the compositional range, x=0.02, 0.04, 0.06, 0.08, 0.10. The samples were synthesized by a conventional solid-state reaction technique. All compositions show a single perovskite structure, and X-ray powder diffraction patterns can be indexed using a rhombohedral structure. Lattice constants and lattice distortion increase while the amount of BaTiO3 increases. The X-ray diffraction results show the morphotropic phase boundary （MPB） of （1-x）（Bi1/2Na12） TiO3-xBaTiO3 exists in near x=0.06-0.08. Temperature dependence of dielectric constant eT33/ε0 measurement reveals that all compositions experience one structural phase and two ferroelectric phases transition below 400℃： rhombohedral （or rhombohedral plus tetragonal） ferroelectric phase ←→ tetragonal antiferroelectric phase ←→ tetragonal paraelectric phase. Relaxor behaviors exist in the course of ferroelectric to antiferroelectric phase transition. Dielectric and piezoelectric properties are enhanced in the MPB range for （ 1-x）（Bi1/2Na1/2）TiO3-xBaTiO3.     

Composite cathode Bi<Subscript>1.14</Subscript>Sr<Subscript>0.43</Subscript>O<Subscript>2.14</Subscript>-Ag for intermediate-temperature solid oxide fuel cells

Composites consisting of strontium stabilized bismuth oxide （Bi1.14Sr0.43O2.14, SSB） and silver were investigated as cathodes for intermediate-temperature solid oxide fuel cells with doped ceria electrolyte. There were no chemical reactions between the two components. The microstructure of the interfaces between composite cathodes and Ce0.8Sm0.2O1.9 （SDC） electrolytes was examined by scanning electron microscopy （SEM）. Impedance spectroscopy measurements show that the performance of cathode fired at 700 ℃ is the best. When the content of Ag2O is 70 wt%, polarization resistance values for the SSB-Ag cathodes are as low as 0.2 Ωcm^2 at 700℃ and 0.29 Ωcm^2 at 650℃. These results are much smaller than some of other reported composite cathodes on doped ceria electrolyte and indicate that SSB-Ag composite is a potential cathode material for intermediate temperature SOFCs.     

Microstructure and mechanical properties of TiB<Subscript>2</Subscript>-Al<Subscript>2</Subscript>O<Subscript>3</Subscript> composites

Effects of Al2O3 and Ni as the additives on the sinterability, microstructure and mechanical properties were systematic studied. The experimental results show that only a relative density about 96.2% of hot-pressing TiB2-30%Al2O3 can be attained due to the plate-like TiB2 particle and its random orientation and excessive Al2O3 grain growth. When sintering temperature is higher than 1 700 ℃, TiB2 grain growth can be found, which obvious improves flexural strength of TiB2 matrix but decreases toughness. It seems that mechanical properties of TiB2-Al2O3 composites are mainly depended on relative density besides grain growth. otherwise, they will be determined by relative density and TiB2 matrix strength together. Anyway, Al2O3 addition can weaken the grain boundary and thus improve the toughness of the materials. A flexural strength of 529 MPa, Vickers hardness of 24.8 GPa and indentation toughness of 4.56 MPa·m1/2 can be achieved inTiB2-30vol% Al2O3.     

Preparation, Characterization and Dielectric Property of Sr5 LaTi3 Nb7O30 Ceramic

Sr5LaTi3Nb7O30 ceramic was prepared by the conventional high temperature solid-state reaction route. The sintered samples were characterized by X-ray diffraction, scanning electron microscopy ( SEM ), differential thermal calorimetry ( DSC ) and dielectric measurements. The results show Sr5LaTi3Nb7O30 belongs to paraclectric phase of filled tetrngonal TB structure at room temperature, and undergoes a diffuse phase transition in the temperature range of -54-34℃ . And Sr5LaTi3Nb7O30 ceramic shows a high dielectric constant of 479 with a low dielectric loss of 0.005 at 1MHz . In comparison with Ba-based ceramics with TB structure, the temperature coefficients of the dielectric constant ( τt ) is significantly reduced.     

Effect of aluminum addition on microstructure and properties of SiO<Subscript>2</Subscript>-B<Subscript>2</Subscript>O<Subscript>3</Subscript>-Al<Subscript>2</Subscript>O<Subscript>3</Subscript>-CaO vitrified bond

Influence of aluminum addition on the structures and properties of SiO₂-B₂O₃-Al₂O₃-CaO vitrified bond at low sintering temperature and high strength was discussed. FTIR and XRD analyses were used to characterize the structures of the basic vitrified bond with different contents of aluminum. The bending strength and the thermal expansion coefficients were also tested. Meanwhile, the microstructures of composite specimens at sintering temperature of 660 °C were observed by scanning electron microscope (SEM). The experimental results showed that the properties of vitrified bond with 1wt% aluminum were improved significantly, where the bending strength, Rockwell hardness, and thermal expansion coefficient of the vitrified bond reached 132 MPa, 63 HRB, and 6.73×10^-6 °C^-1, respectively.