Highly conducting and transparent antimony doped tin oxide thin films: the role of sputtering power density

Sb doped SnO₂ thin films were deposited on quartz substrates by magnetron sputtering at 600 °C and the effects of sputtering power density on the preferential orientation, structural, surface morphological, optical and electrical properties had been studied. The XRD analyses confirm the formation of cassiterite tetragonal structure and the presence of preferential orientation in (2 1 1) direction for tin oxygen thin films. The dislocation density analyses reveal that the generated defects can be suppressed by the appropriate sputtering power density in the SnO₂ lattice. The studies of surface morphologies show that grain sizes and surface roughness are remarkably affected by the sputtering power density. The resistivity of Sb doped SnO₂ thin films gradually decreases as increasing the sputtering power density, reaches a minimum value of 8.23×10⁻⁴ Ω cm at 7.65/cm² and starts increasing thereafter. The possible mechanisms for the change in resistivity are proposed. The average transmittances are more than 83% in the visible region (380–780 nm) for all the thin films, the optical band gaps are above 4.1 eV. And the mechanisms of the variation of optical properties at different sputtering power densities are addressed.     

Improved physical properties of Al-doped ZnO thin films deposited by unbalanced RF magnetron sputtering

Room temperature Al-doped ZnO (AZO) thin films with improved crystalline and optical properties were grown on normal glass substrates using unbalanced RF magnetron sputtering technique. To modify the plasma density towards the substrate and enhance the crystalline nature, an additional magnetic field ranging from 0 to 6.0 mT has been applied to the AZO target by proper tuning of solenoid coil current from 0 to 0.2 A respectively, which plays a significant role for controlling the physical properties of AZO films. The results from XRD studies indicate that all AZO films were composed of hexagonal wurtzite structure with better crystal quality through the applied magnetic field, ZnO (002) plane as a preferred growth. Furthermore, XPS studies suggested that symmetric chemical shifts in the binding energies for the Zn 2p and O1s levels with applied magnetic field. SEM analysis revealed the formation of a smooth, homogeneous and dense morphological surface with applied magnetic field. From AFM analysis, it was observed that the applied magnetic field strongly influenced the grain size and the films showed decreasing tendency in electrical resistivity. Films exhibited superior optical transmittance more than 94% in the visible region essentially due to the formation of better crystalline nature. The results indicate that improved band gap from 3.10 to 3.15 eV with additional magnetic field varied from 0 to 6.0 mT respectively.     

Effect of substrate temperature on the structural,electrical, and optical properties of GZO/ZnO films deposited by radio frequency magnetron sputtering

Ga-doped ZnO (GZO)/ZnO bi-layered films were deposited on glass substrates by radio frequency magnetron sputtering at different substrate temperatures of 100, 200 and 300 °C to investigate the effects of substrate temperature on the structural, electrical, and optical properties of the films. Thicknesses of the GZO and ZnO buffer layer were kept constant at 85 and 15 nm by controlling the deposition times.     

Growth and properties of Cu3SbS4 thin films prepared by a two-stage process for solar cell applications

Cu₃SbS₄ is a promising material for thin film heterojunction solar cells owing to its suitable optical and electrical properties. In this paper, we report the preparation of Cu₃SbS₄ thin films by annealing the Sb₂S₃/CuS stacks, produced by chemical bath deposition, in a graphite box held at different temperatures. The influence of annealing temperature on the growth and properties of these films is investigated. These films are systematically analyzed by evaluating their structural, microstructural, optical and electrical properties using suitable characterization techniques. X-ray diffraction analysis showed that these films exhibit tetragonal crystal structure with the lattice parameters a=0.537 nm and b=1.087 nm. Their crystallite size increases with increasing annealing temperature of the stacks. Raman spectroscopy analysis of these films exhibited modes at 132, 247, 273, 317, 344, 358 and 635 cm⁻¹ due to Cu₃SbS₄ phase. X-ray photoelectron spectroscopy analysis revealed that the films prepared by annealing the stack at 350 °C exhibit a Cu-poor and Sb-rich composition with +1, +5 and −2 oxidation states of Cu, Sb and S, respectively. Morphological studies showed an improvement in the grain size of the films on increasing the annealing temperature. The direct optical band gap of these films was in the range of 0.82–0.85 eV. Hall measurements showed that the films are p-type in nature and their electrical resistivity, hole mobility and hole concentration are in the ranges of 0.14–1.20 Ω-cm, 0.05–2.11 cm² V⁻¹ s⁻¹ and 9.4×10²⁰–1.4×10¹⁹ cm⁻³, respectively. These structural, morphological, optical and electrical properties suggest that Cu₃SbS₄ could be used as an absorber layer for bottom cell in multi-junction solar cells.     

Optical band gap shift in thin LiNbO3 films grown by radio-frequency magnetron sputtering

Thin polycrystalline LiNbO₃ films were deposited by the radio-frequency magnetron sputtering (RFMS) method and ion-beam sputtering (IBS) method under different conditions. Study of the adsorption band edge of fabricated films reveals direct and indirect optical transition. Depending on the particular technological sputtering RFMS regime, the direct energy gap varies from 3.8 to 4.4 eV. Band tails induced by the defects formation due to the reactive plasma effect on the film structure are responsible for indirect optical transitions in the studied films. Thermal annealing has a prominent effect on trap concentration and strain in as-grown films leading to rise in direct band energy up to 4.4 eV which is close to the value for bulk LiNbO₃.     

Microstructural and optical properties of Ta-doped ZnO films prepared by radio frequency magnetron sputtering

Ta-doped ZnO films with different doping levels (0–5.02 at%) were prepared by radio frequency magnetron sputtering. The effects of the doping amount on the microstructure and the optical properties of the films were investigated. The grain size and surface roughness first significantly decrease and then slowly increase with the increase of Ta doping concentration. Both the grain size and the root mean square (RMS) roughness reach their minimum values at the doping content of 3.32 at%. X-ray Diffraction (XRD) patterns confirmed that the prepared Ta-doped ZnO films are polycrystalline with hexagonal wurtzite structure and a preferred orientation along the (002) plane. X-ray photoelectron spectroscopy (XPS) analysis reveals that Ta exists in the ZnO film in the Ta⁵⁺ and Ta⁴⁺ states. The average optical transmission values of the Ta-doped ZnO films are higher than those of the un-doped ZnO film in the visible region. The band gap energy extracted from the absorption edge of transmission spectra becomes large and the near band edge (NBE) emission energy obtained from PL spectra blueshifts to high energy when the Ta doping content grows from 0 at% to 5.02 at%, which can be explained by the Burstein–Moss shift.     

Influence of the selenization time on the properties of (Na0.1Cu0.9)2ZnSn(S,Se)4 thin films and their photovoltaic solar cells

(Na_0.1Cu_0.9)₂ZnSn(S,Se)₄ thin films with a single kesterite phase were synthesized using a sol-gel spin-coating method accompanied by rapid post-annealing. In this study, we investigated the effect of selenization time on the crystal quality and photoelectric performance of the (Na_0.1Cu_0.9)₂ZnSn(S,Se)₄ films. It was found that the crystallinity and morphology of the films was enhanced, and some of bigger Se substituted for the S site in (Na_0.1Cu_0.9)₂ZnSn(S,Se)₄ with increasing the selenization time. The bandgap of the film can be regulated from 1.04 eV to 0.99 eV by varying the selenization time. In addition, all films showed p-type conductive characteristics, and films with optimal electrical performance could be obtained by optimizing the selenization time. Finally, the (Na_0.1Cu_0.9)₂ZnSn(S,Se)₄ thin film with the best crystal quality and optical-electrical characteristics was obtained at an optimized selenization time of 15 min. A high power conversion efficiency (PCE) of 3.92% was obtained for the (Na_0.1Cu_0.9)₂ZnSn(S,Se)₄ device, which is 42% higher compared to that of the undoped Cu₂ZnSn(S,Se)₄ (CZTSSe) device.     

AgSbTe2 semi-nanocrystalline thin films as a multifunctional platform for optoelectronic and diode applications

The synthesis of the nanosized multifunctional thin film provides new solutions for many technological issues and consider a great step for miniaturized technology. Toward these goals, AgSbTe₂ semi-nanocrystalline thin films of different thicknesses were synthesized by the thermal evaporation technique. The structural features were investigated by X-ray diffraction, and selected area electron diffraction (SAED) yielding a semi-nanocrystalline thin film of grain size ranging from 9.98 to 21.38 nm. The energy-dispersive X-ray spectroscopy (EDAX) verified the high purity and stoichiometry of the deposited films. For optoelectronic application, many optical parameters, including band gap (E_g), Urbach energy (E_u), Refractive index (n), dispersion energy (E_d), electronic polarizability (α_e), and interband transition strength (J_CV) were extensively discussed. The optical band gap reduced from 1.41 to 1.04 eV upon increasing the thickness from 150 to 550 nm. The temperature dependence of the electrical resistivity (ρ) of nanosized thin film was measured and the activation energy was estimated and it was found that the resistivity increased up to 450 K asserting the semiconductor behavior of the films. As for diode application, The Ag/2D-MoS₂/p-AgSbTe₂ (550 nm)/n-Si/Al heterostructure diode was constructed by thermal evaporation and all the diode parameters alongside conduction mechanism were studied in detail. AgSbTe₂-based diode showed a low rectification ratio; however, the ideality factor (n) and zero bias barrier height (Φ_b) had optimal values of about 1.40 and 0.75 at room temperature, respectively.     

Synthesis and investigation of environmental protection and earth-abundant kesterite Cu2MgxZn1-xSn(S,Se)4 thin films for solar cells

We have synthesized Cu₂Mg_xZn_1–xSn(S,Se)₄ (0?≤?x?≤?0.6) thin films by a facile sol-gel method, and studied the influence of Mg concentration on the crystal structure, surface morphology and photoelectric performance of Cu₂Mg_xZn_1–xSn(S,Se)₄ thin films systematically. It was shown that the smaller Zn²⁺ in Kesterite phase Cu₂ZnSn(S,Se)₄ will be replaced by larger Mg²⁺, forming uniform pure phase Cu₂Mg_xZn_1–xSn(S,Se)₄. The band gap of Cu₂Mg_xZn_1–xSn(S,Se)₄ films can be adjusted from 1.12 to 0.88?eV as the x value changes from 0 to 0.6. Furthermore, the Cu₂Mg_xZn_1–xSn(S,Se)₄ thin films with large grain size, smooth surface and less grain boundaries was obtained at an optimized condition of x?=?0.2. The carrier concentration of Cu₂Mg_xZn_1–xSn(S,Se)₄ thin film reaches the maximum 6.47?×?10¹⁸ cm^?3 at x?=?0.2, which is a potential material to be the absorption layer of high efficiency solar cells.     

Performance optimization of fluorine-doped tin oxide thin films by introducing ultrasonic vibration during laser annealing

Commercial fluorine-doped tin oxide (FTO) thin films were subjected to laser annealing coupled with ultrasonic vibration (48 kHz and 350 W). The effects of ultrasonic vibration, laser fluence and defocusing amount were systematically studied. Laser annealing could result in grain growth or damage of the FTO layer, and introducing ultrasonic vibration during laser annealing could effectively enhance the film compactness, decrease the film thickness and refine the grains in the film. As a result, the optical and electrical properties of the ultrasonic-vibration-assisted laser-annealed FTO films were significantly improved by using low laser fluences and high defocusing amounts, and were slightly deteriorated when high laser fluences and low defocusing amounts were adopted. The results indicated that the film obtained by ultrasonic-vibration-assisted laser annealing using a laser fluence of 0.6 J/cm² and a defocusing amount of 2.0 mm had the best overall photoelectric property with an average transmittance of 84.1%, a sheet resistance of 8.9 Ω/sq and a figure of merit of 1.99×10^–2 Ω^–1, outperforming that of the film obtained by pure laser annealing using the same experimental parameters. The present study confirms the efficacy of ultrasonic-vibration-assisted laser annealing in optimizing performance of FTO films.     

ZnO:Al thin films from (Al2O3)x(ZnO)(1-x) powder targets by magnetron sputtering

In the present work we prepared Aluminum doped Zinc Oxide (AZO) thin films from powder targets. Various concentrations (W/W percentages) of Al₂O₃ such as1%, 2%, 3%, 4%, 5%, 6%, 7% and 8% were mixed in ZnO powder and made in the form of a 3 inch disc target. These ceramic targets are sputtered in RF magnetron sputtering unit for the deposition of AZO thin films. Optical and electrical properties are analyzed to get an optimized percentage of mixing for achieving high transparency and low resistivity. At Al₂O₃ percentage of 3% there is a considerable decrement in the resistivity, and at 7% there is a considerable decrease in the optical transmittance. Mobility and carrier concentration are increasing with Al₂O₃ percentage. Bandgap of the films is observed to be decreasing with increasing the Al₂O₃ percentage.     

Thermally stable and transparent F-doped SnO2 (FTO) /Ag/FTO films for transparent thin film heaters used in automobiles

We investigated the characteristics of F-doped SnO₂ (FTO)/Ag/FTO films prepared using thermal evaporation at room temperature for the application of the as-formed films in transparent thin film heaters (TFHs) of automobiles. To optimize the electrical and optical properties of the FTO/Ag/FTO multi-layer, the figure of merit (FoM) values of the FTO/Ag/FTO multi-layers were compared as a function of the thickness of the Ag and FTO layers. The sheet resistance and optical transmittance of the FTO/Ag/FTO multi-layer were primarily affected by the Ag inter-layer and bottom/top FTO thicknesses, respectively. At optimized Ag (10 nm) and FTO (40 nm) thicknesses, we fabricated a FTO/Ag/FTO electrode with a sheet resistance of 8.00 Ohm/square, an optical transmittance of 83.04 % at a visible wavelength (400–800 nm) and a FoM value of 19.49 Ohm^-1. The TFHs comprising the optimal FTO/Ag/FTO electrode exhibited a saturated temperature of 117 °C at a low operating direct current of 6 V, owing to the low sheet resistance. In addition, the FTO/Ag/FTO-based TFHs exhibited thermally stable performances owing to the stability of the bottom and top FTO electrodes. The performance of the FTO/Ag/FTO-based TFHs demonstrated that the thermally evaporated FTO/Ag/FTO multi-layer is a promising, stable, and transparent electrode material for application in the front window TFHs used in automobiles.     

Fabrication of CaLa4(Zr0.05Ti0.95)4O15 thin films by RF magnetron sputtering

Crystalline CaLa₄(Zr_0.05Ti_0.95)₄O₁₅ thin films deposited on n-type Si substrates byRF magnetron sputtering at a fixed RF power of 100 W, an Ar/O₂ ratio of 100/0, an operating pressure of 3 mTorr, and different substrate temperatures were investigated. The surface structural and morphological characteristics analyzed by X-ray diffraction and atomic force microscopy were sensitive to the deposition conditions, such as the substrate temperature. The diffraction pattern showed that the deposited films had a polycrystalline microstructure. As the substrate temperature increased, the quality of the CaLa₄(Zr_0.05Ti_0.95)₄O₁₅ thin films improved, and the kinetic energies of the sputtered atoms increased, resulting in a structural improvement of the deposited CaLa₄(Zr_0.05Ti_0.95)₄O₁₅ thin films. A high dielectric constant of 16.7 (f=1 MHz), a dissipation factor of 0.19 (f=1 MHz), and a low leakage current density of 3.18×10⁻⁷ A/cm² at an electrical field of 50 kV/cm were obtained for the prepared films.     

Al3+ doping induced changes of structural,morphology, photoluminescence,optical and electrical properties of SnO2 thin films as alternative TCO for optoelectronic applications

Highly transparent and conductive pure (SnO₂) and aluminum doped tin oxide (Al:SnO₂) thin films were deposited on glass substrates by the sol-gel spin-coating method. The structural, morphological, optical and electrical properties of the prepared thin films at different doping rates have been studied. X-ray diffraction results revealed that all the films were polycrystalline in nature with a tetragonal rutile structure. SEM images of the analyzed films showed a homogeneous surface morphology, composed of nanocrystalline grains. The EDS results confirmed the presence of Sn and O elements in pure SnO₂ and Sn, O, Al in doped SnO₂ thin films. The optical results revealed a high transmittance greater than 85% in the visible and near infrared and a band gap varying between 3.82 and 3.89 eV. PL spectra at room temperature showed that the most dominant defects correspond to oxygen vacancies. A low resistivity of order varying between 10^?3 and 10^?4 Ω cm and a high figure of merits ranging between 10^?3 and 10^?2 Ω^?1 in the visible range were obtained. The best performances were obtained for samples containing 2 at. % Al, which could be used as an alternative TCO layer for future optoelectronic devices.     

Superior optoelectrical properties of magnetron sputter-deposited cerium-doped indium oxide thin films for solar cell applications

Indium tin oxide (ITO) is the most commonly used front contact material for a variety of photovoltaic technologies. However, the presence of a high free carrier concentration in ITO thin films results in the well-known phenomenon of free carrier absorption in the near-infrared (NIR) region of the solar spectrum. This causes optical losses especially in those solar cells where the active layer is designed to preferentially absorb NIR photons. Therefore, a combination of high carrier mobility and high NIR transparency is desired for advanced transparent conductive oxides for substituting ITO in solar cells. In this work, cerium-doped indium oxide (ICeO) thin films are deposited by pulsed DC magnetron sputtering, giving a remarkable 137% improvement of the mobility (71 cm² V^?1 s^?1) compared to the previous record value of 30 cm² V^?1 s^?1 for DC magnetron sputtered cerium-doped ITO films on glass. When compared to conventional ITO films prepared in this work, the highest mobility of ICeO is found to be almost four times higher and also the NIR transmission is substantially enhanced. Theoretical modelling of the experimental results indicates that neutral impurity scattering limits the carrier mobility in our films. With the recent advancements in single and multi-junction organic and perovskite solar cells, the development of ICeO/glass substrates (as possible replacements for the commonly used ITO/glass substrates) demonstrates significant potential in minimizing optical losses in the NIR region.     

Effect of Fe-doping on the structural,optical and magnetic properties of ZnO thin films prepared by RF magnetron sputtering

In this paper, we report the fabrication and systematic characterization of Fe Doped ZnO thin Films. Fe_xZn_1−x O (x=0<0.05) films were prepared by RF magnetron sputtering on Si (400) substrate. Influence of Fe doping on structural, optical and magnetic properties has been studied. The X-ray diffraction (XRD) analysis shows that Fe doping has affected the crystalline structure, grain size and strain in the thin films. The best crystalline structure is obtained for 3% Fe Doping as observed from Atomic Force Microscopy (AFM) and X-ray diffraction (XRD). The magnetic properties studied using Vibrating Sample Magnetometer reveals the room temperature ferromagnetic nature of the thin films. However, changing the Fe concentration degrades the magnetic property in turn. The mechanism behind the above results has been discussed minutely in this paper.     

Influence of deposition parameters and annealing treatment on the properties of GZO films grown using rf magnetron sputtering

In this study, transparent conductive films of gallium-doped zinc oxide (GZO) are deposited on soda-lime glass substrates, under varied coating conditions (rf power, sputtering pressure, substrate-to-target distance and deposition time), using radio frequency (rf) magnetron sputtering, at room temperature. The effect of the coating parameters on the structural, morphological, electrical and optical properties of GZO films was studied. This study uses a grey-based Taguchi method, to determine the parameters of the coating process for GZO films, by considering multiple performance characteristics. In the confirmation runs, with grey relational analysis, improvements of 14.1% in the deposition rate, 39.81% in electrical resistivity and 1.38% in visible range transmittance were noted. The influence of annealing treatment, in a vacuum, oxygen, and nitrogen gas atmospheres, at temperatures ranging from 130 to 190 °C, for a period of 1 h, was also investigated. GZO films annealed at 190 °C, in a vacuum, showed the lowest electrical resistivity, at 1.07 × 10⁻³ Ω-cm, with about 85% optical transmittance, in the visible region. It is likely that films grown at lower temperatures (190 °C) could be coated onto polymeric substrates, to produce flexible optoelectronic devices.     

Physical properties of La-doped NiO sprayed thin films for optoelectronic and sensor applications

Lanthanum-doped nickel oxide NiO:La thin films were deposited onto glass substrates at 450 °C, by the spray pyrolysis technique using nickel and lanthanum chlorides as precursors. These films belonging to cubic structure, crystallize preferentially along (111) plane. First, Raman study shows the presence of bands corresponding to NiO structure. The same study confirms the presence of both Ni(OH)₂ and LaNiO₃ as secondary phases. Moreover, using SEM observations, all samples exhibit porous microstructures with rough surfaces and spherical nanoparticles of about 40 nm as size. Second, NiO:La films present a direct band gap energy value lying in the range of 3.63–3.84 eV. Also, the effect of the La incorporation in NiO matrix on the disorder is studied in terms of Urbach energy. Some optical constants (refractive index, extinction coefficient, dielectric constants, and dispersion parameters) are reached. On the other hand, the photoluminescence spectroscopy reveals the presence of peaks related to the electronic transition of the Ni²⁺ ions and others confirming the presence of some defects in NiO matrix in terms of La content. Finally, it has been found that La doping allows the improvement of the electrical conductivity as well as Haacke’s figure of merit of NiO sprayed thin films by at least, three orders of magnitude.     

Microstructure,mechanical and tribological properties of TaCN composite films by reactive magnetron sputtering

In this paper, a series of TaCN composite films with different carbon content were deposited by the magnetron sputtering system and the microstructure, mechanical and tribological properties were investigated. The results showed that the deposited TaCN films exhibited a three-phase of face-centered cubic (fcc) Ta(C,N), hexagonal closed-packed (hcp) Ta(C,N) and amorphous CNx. With the increase of carbon content, the hardness of the TaCN films first increased and then decreased, after reaching a maximum of 33.1 GPa; the adhesion strength increased gradually; the coefficient of friction decreased monotonically and the wear property initially improved and then weakened at room temperature. The coefficient of friction of the TaCN film at 28.21 at.% carbon decreased first, then increased and then decreased again and its high-temperature wear rate first decreased slightly and then increased, as the temperature increased from room temperature (RT) to 600 °C. The TaCN film at 28.21 at.% carbon exhibited excellent an elevated-temperature tribological properties.