共查询到20条相似文献,搜索用时 31 毫秒
1.
Fucai Liu Shoujun Zheng Xuexia He Apoorva Chaturvedi Junfeng He Wai Leong Chow Thomas R. Mion Xingli Wang Jiadong Zhou Qundong Fu Hong Jin Fan Beng Kang Tay Li Song Rui‐Hua He Christian Kloc Pulickel M. Ajayan Zheng Liu 《Advanced functional materials》2016,26(8):1169-1177
Due to the novel optical and optoelectronic properties, 2D materials have received increasing interests for optoelectronics applications. Discovering new properties and functionalities of 2D materials is challenging yet promising. Here broadband polarization sensitive photodetectors based on few layer ReS2 are demonstrated. The transistor based on few layer ReS2 shows an n‐type behavior with the mobility of about 40 cm2 V?1 s?1 and on/off ratio of 105. The polarization dependence of photoresponse is ascribed to the unique anisotropic in‐plane crystal structure, consistent with the optical absorption anisotropy. The linear dichroic photodetection with a high photoresponsivity reported here demonstrates a route to exploit the intrinsic anisotropy of 2D materials and the possibility to open up new ways for the applications of 2D materials for light polarization detection. 相似文献
2.
Large‐Area Bilayer ReS2 Film/Multilayer ReS2 Flakes Synthesized by Chemical Vapor Deposition for High Performance Photodetectors 下载免费PDF全文
Muhammad Hafeez Lin Gan Huiqiao Li Ying Ma Tianyou Zhai 《Advanced functional materials》2016,26(25):4551-4560
Rhenium disulfide (ReS2) is attracting more and more attention for its thickness‐depended direct band gap. As a new appearing 2D transition metal dichalcogenide, the studies on synthesis method via chemical vapor deposition (CVD) is still rare. Here a systematically study on the CVD growth of continuous bilayer ReS2 film and single crystalline hexagonal ReS2 flake, as well as their corresponding optoelectronic properties is reported. Moreover, the growth mechanism has been proposed, accompanied with simulation study. High‐performance photodetector based on ReS2 flake shows a high responsivity of 604 A·W?1, high external quantum efficiency of 1.50 × 105 %, and fast response time of 2 ms. ReS2 film‐based photodetector exhibits weaker performance than the flake one; however, it still demonstrates a much faster response time (≈103 ms) than other reported CVD‐grown ReS2‐based photodetector (≈104–105 ms). Such good properties of ReS2 render it a promising future in 2D optoelectronics. 相似文献
3.
Enze Zhang Yibo Jin Xiang Yuan Weiyi Wang Cheng Zhang Lei Tang Shanshan Liu Peng Zhou Weida Hu Faxian Xiu 《Advanced functional materials》2015,25(26):4076-4082
Atomically thin 2D layered transition metal dichalcogenides (TMDs) have been extensively studied in recent years because of their appealing electrical and optical properties. Here, the fabrication of ReS2 field‐effect transistors is reported via the encapsulation of ReS2 nanosheets in a high‐κ Al2O3 dielectric environment. Low‐temperature transport measurements allow to observe a direct metal‐to‐insulator transition originating from strong electron–electron interactions. Remarkably, the photodetectors based on ReS2 exhibit gate‐tunable photoresponsivity up to 16.14 A W?1 and external quantum efficiency reaching 3168%, showing a competitive device performance to those reported in graphene, MoSe2, GaS, and GaSe‐based photodetectors. This study unambiguously distinguishes ReS2 as a new candidate for future applications in electronics and optoelectronics. 相似文献
4.
Liang Li Weike Wang Yang Chai Huiqiao Li Mingliang Tian Tianyou Zhai 《Advanced functional materials》2017,27(27)
The very recently rediscovered group‐10 transition metal dichalcogenides (TMDs) such as PtS2 and PtSe2, have joined the 2D material family as potentially promising candidates for electronic and optoeletronic applications due to their theoretically high carrier mobility, widely tunable bandgap, and ultrastability. Here, the first exploration of optoelectronic application based on few‐layered PtS2 using h‐BN as substrate is presented. The phototransistor exhibits high responsivity up to 1.56 × 103 A W?1 and detectivity of 2.9 × 1011 Jones. Additionally, an ultrahigh photogain ≈2 × 106 is obtained at a gate voltage V g = 30 V, one of the highest gain among 2D photodetectors, which is attributed to the existence of trap states. More interestingly, the few‐layered PtS2 phototransistor shows a back gate modulated photocurrent generation mechanism, that is, from the photoconductive effect dominant to photogating effect dominant via tuning the gate voltage from the OFF state to the ON state. Such good properties combined with gate‐controlled photoresponse of PtS2 make it a competitive candidate for future 2D optoelectronic applications. 相似文献
5.
Chao Hu Dongdong Dong Xiaokun Yang Keke Qiao Dun Yang Hui Deng Shengjie Yuan Jahangeer Khan Yang Lan Haisheng Song Jiang Tang 《Advanced functional materials》2017,27(2)
The transitionmetal dichalcogenides‐based phototransistors have demonstrated high transport mobility but are limited to poor photoresponse, which greatly blocks their applications in optoelectronic fields. Here, light sensitive PbS colloidal quantum dots (QDs) combined with 2D WSe2 to develop hybrid QDs/2D‐WSe2 phototransistors for high performance and broadband photodetection are utilized. The device shows a responsivity up to 2 × 105 A W–1, which is orders of magnitude higher than the counterpart of individual material‐based devices. The detection spectra of hybrid devices can be extended to near infrared similar to QDs' response. The high performance of hybrid 0D‐2D phototransistor is ascribed to the synergistic function of photogating effect. PbS QDs can efficiently absorb the input illumination and 2D WSe2 supports a transport expressway for injected photocarriers. The hybrid phototransistors obtain a specific detectivity over 1013 Jones in both ON and OFF state in contrast to the depleted working state (OFF) for other reported QDs/2D phototransistors. The present device construction strategy, photogating enhanced performance, and robust device working conditions contain high potential for future optoelectronic devices. 相似文献
6.
Ultra‐Thin Layered Ternary Single Crystals [Sn(SxSe1−x)2] with Bandgap Engineering for High Performance Phototransistors on Versatile Substrates 下载免费PDF全文
Packiyaraj Perumal Rajesh Kumar Ulaganathan Raman Sankar Yu‐Ming Liao Tzu‐Min Sun Ming‐Wen Chu Fang Cheng Chou Yit‐Tsong Chen Min‐Hsiung Shih Yang‐Fang Chen 《Advanced functional materials》2016,26(21):3630-3638
2D ternary semiconductor single crystals, an emerging class of new materials, have attracted significant interest recently owing to their great potential for academic interest and practical application. In addition to other types of metal dichalcogenides, 2D tin dichalcogenides are also important layered compounds with similar capabilities. Yet, multi‐elemental single crystals enable to assist multiple degrees of freedom for dominant physical properties via ratio alteration. This study reports the growth of single crystals Se‐doped SnS2 or SnSSe alloys, and demonstrates their capability for the fabrication of phototransistors with high performance. Based on exfoliation from bulk high quality single crystals, this study establishes the characteristics of few‐layered SnSSe in structural, optical, and electrical properties. Moreover, few‐layered SnSSe phototransistors are fabricated on both rigid (SiO2/Si) and versatile polyethylene terephthalate substrates and their optoelectronic properties are examined. SnSSe as a phototransistor is demonstrated to exhibit a high photoresponsivity of about 6000 A W?1 with ultra‐high photogain ≈8.8 × 105, fast response time ≈9 ms, and specific detectivity (D*) ≈8.2 × 1012 J. These unique features are much higher than those of recently published phototransistors configured with other few‐layered 2D single crystals, making ultrathin SnSSe a highly qualified candidate for next‐generation optoelectronic applications. 相似文献
7.
Peng Yu Xuechao Yu Wanglin Lu Hsin Lin Linfeng Sun Kezhao Du Fucai Liu Wei Fu Qingsheng Zeng Zexiang Shen Chuanhong Jin Qi Jie Wang Zheng Liu 《Advanced functional materials》2016,26(1):137-145
Atomically layered 2D crystals such as transitional metal dichalcogenides (TMDs) provide an enchanting landscape for optoelectronic applications due to their unique atomic structures. They have been most intensively studied with 2H phase for easy fabrication and manipulation. 1T phase material could possess better electrocatalytic and photocatalytic properties, while they are difficult to fabricate. Herein, for the first time, the atomically layered 1T phase tin diselenides (SnSe2, III‐IV compound) are successfully exfoliated by the method of mechanical exfoliation from bulk single crystals, grown via the chemical vapor transport method without transport gas. More attractively, the high performance atomically layered SnSe2 photodetector has been first successfully fabricated, which displays a good responsivity of 0.5 A W?1 and a fast photoresponse down to ≈2 ms at room temperature, one of the fastest response times among all types of 2D photodetectors. It makes SnSe2 a promising candidate for high performance optoelectronic devices. Moreover, high performance bilayered SnSe2 field‐effect transistors are also demonstrated with a mobility of ≈4 cm2 V?1 s?1 and an on/off ratio of 103 at room temperature. The results demonstrate that few layered 1T TMD materials are relatively stable in air and can be exploited for various electrical and optical applications. 相似文献
8.
Integrating Efficient Optical Gain in High‐Mobility Organic Semiconductors for Multifunctional Optoelectronic Applications 下载免费PDF全文
Suqian Ma Ke Zhou Mengxiao Hu Qingyuan Li Yingjie Liu Hantang Zhang Jiangbo Jing Huanli Dong Bin Xu Wenping Hu Wenjing Tian 《Advanced functional materials》2018,28(36)
Simultaneously integrating efficient optical gain and high charge carrier mobility in organic semiconductors for multifunctional optoelectronic applications is challenging. Here, a new thiophene/phenylene derivative, 5,5′‐bis(2,2‐diphenylvinyl)‐bithiophene (BDPV2T), containing an appropriate butterfly molecular configuration in a π‐conjugated structure, is designed to achieve both solid‐state emission and charge transport properties. The prepared BDPV2T crystals exhibit excellent light‐emitting characteristics with a photoluminescence quantum yield of 30%, low light‐amplification threshold of 8 kW cm?2, high optical net gain up to 70 cm?1, and high charge carrier mobility up to 1 cm2 V?1 s?1 in their J‐aggregate single crystals. These BDPV2T single crystal characteristics ensure their application potential for photodetectors, field‐effect transistors, and light‐emitting transistors. High optoelectronic performances are achieved with photoresponsivity of 2.0 × 103 A W?1 and light on/off ratio of 5.4 × 105 in photodetectors, and efficient ambipolar charge transport (µh: 0.14 cm2 V?1 s?1, µe: 0.02 cm2 V?1 s?1) and electroluminescence characteristics in light‐emitting transistors. The remarkably integrated optoelectronic properties of BDPV2T suggest it is a promising candidate for organic multifunctional and electrically pumped laser applications. 相似文献
9.
Liang Li Weike Wang Lin Gan Nan Zhou Xiangde Zhu Qi Zhang Huiqiao Li Mingliang Tian Tianyou Zhai 《Advanced functional materials》2016,26(45):8281-8289
Multielemental systems enable the use of multiple degrees of freedom for control of physical properties by means of stoichiometric variation. This has attracted extremely high interest in the field of 2D optoelectronics in recent years. Here, for the first time, multilayer 2D ternary Ta2NiSe5 flakes are successfully fabricated using a mechanical exfoliation method from chemical vapor transport synthesized high quality bulk and the optoelectronic properties are systematically investigated. Importantly, a high responsivity of 17.21 A W?1 and high external quantum efficiency of 2645% are recorded from an as‐fabricated photodetector at room temperature in air; this is superior to most other 2D materials‐based photodetectors that have been reported. More intriguingly, a usual sublinear and an unusual superlinear light‐intensity‐dependent photocurrent are observed under air and vacuum, respectively. These excellent and special properties make multilayer ternary Ta2NiSe5 a highly competitive candidate for future infrared optoelectronic applications and an interesting platform for photophysics studies. 相似文献
10.
Wei Zeng Jie Li Liping Feng Haixi Pan Xiaodong Zhang Hanqing Sun Zhengtang Liu 《Advanced functional materials》2019,29(16)
Compared to the most studied 2D elements and binary compounds, ternary layered compounds with more adjustable physical and chemical properties have exhibited potential applications in electronic and optoelectronic devices. Here, 2D ternary layered BiOI crystals are synthesized first with a domain size up to 100 µm via space‐confined chemical vapor deposition. The photodetectors based on the as‐grown BiOI nanosheets demonstrate high sensitivity to 473 nm light. The Ion/Ioff ratio and detectivity of BiOI photodetectors can reach up to 1 × 105 and 8.2 × 1011 Jones at 473 nm, respectively. Particularly, the contact and dark current of the photodetectors can be controlled by 254 nm ultraviolet light irradiation due to the introduction of oxygen vacancies. The facile synthesis of large‐area atomically thin BiOI and its controllable performance by ultraviolet light irradiation suggest that 2D BiOI crystal is a promising material for fundamental investigations and optoelectronic applications. 相似文献
11.
Xing Zhou Qi Zhang Lin Gan Huiqiao Li Tianyou Zhai 《Advanced functional materials》2016,26(24):4405-4413
2D SnS2 nanosheets have been attracting intensive attention as one potential candidate for the modern electronic and/or optoelectronic fields. However, the controllable large‐size growth of ultrathin SnS2 nanosheets still remains a great challenge and the photodetectors based on SnS2 nanosheets suffer from low responsivity, thus hindering their further applications so far. Herein, an improved chemical vapor deposition route is provided to synthesize large‐size SnS2 nanosheets, the side length of which can surpass 150 μm. Then, ultrathin SnS2 nanosheet‐based phototransistors are fabricated, which achieve high photoresponsivities up to 261 A W?1 (with a fast rising time of 20 ms and a falling time of 16 ms) in air and 722 A W?1 in vacuum, respectively. Furthermore, the effects of back‐gate voltage and air adsorbates on the optoelectronic properties of the SnS2 nanosheet have been systematically investigated. In addition, a high‐performance flexible photodetector based on SnS2 nanosheet is also fabricated with a high responsivity of 34.6 A W?1. 相似文献
12.
Long‐Hui Zeng Di Wu Sheng‐Huang Lin Chao Xie Hui‐Yu Yuan Wei Lu Shu Ping Lau Yang Chai Lin‐Bao Luo Zhong‐Jun Li Yuen Hong Tsang 《Advanced functional materials》2019,29(1)
Palladium diselenide (PdSe2), a thus far scarcely studied group‐10 transition metal dichalcogenide has exhibited promising potential in future optoelectronic and electronic devices due to unique structures and electrical properties. Here, the controllable synthesis of wafer‐scale and homogeneous 2D PdSe2 film is reported by a simple selenization approach. By choosing different thickness of precursor Pd layer, 2D PdSe2 with thickness of 1.2–20 nm can be readily synthesized. Interestingly, with the increase in thickness, obvious redshift in wavenumber is revealed by Raman spectroscopy. Moreover, in accordance with density functional theory (DFT) calculation, optical absorption and ultraviolet photoemission spectroscopy (UPS) analyses confirm that the PdSe2 exhibits an evolution from a semiconductor (monolayer) to semimetal (bulk). Further combination of the PdSe2 layer with Si leads to a highly sensitive, fast, and broadband photodetector with a high responsivity (300.2 mA W?1) and specific detectivity (≈1013 Jones). By decorating the device with black phosphorus quantum dots, the device performance can be further optimized. These results suggest the as‐selenized PdSe2 is a promising material for optoelectronic application. 相似文献
13.
Zhijian Lu Yan Xu Yongqiang Yu Kewei Xu Jie Mao Gaobin Xu Yuanming Ma Di Wu Jiansheng Jie 《Advanced functional materials》2020,30(9)
2D transition metal dichalcogenides are promising candidates for high‐performance photodetectors. However, the relatively low response speed as well as the complex transfer process hinders their wide applications. Herein, for the first time, the fabrication of a few‐layer MoTe2/Si 2D–3D vertical heterojunction for high‐speed and broadband photodiodes by a pulsed laser deposition technique is reported. Owing to the high junction quality, ultrathin MoTe2 film thickness, and unique vertical n–n heterojunction structure, the photodiode exhibits excellent device performance in terms of a high responsivity of 0.19 A W?1 and a large detectivity of 6.8 × 1013 Jones. The device is also capable of detecting a broadband light with wavelength spanning from 300 to 1800 nm. More importantly, the device possesses an ultrahigh response speed up to 150 ns with a 3‐dB electrical bandwidth approaching 0.12 GHz. This work paves the way toward the fabrication of novel 2D–3D heterojunctions for high‐performance, ultrafast photodetectors. 相似文献
14.
Fan Gong Wenjin Luo Jianlu Wang Peng Wang Hehai Fang Dingshan Zheng Nan Guo Jingli Wang Man Luo Johnny C. Ho Xiaoshuang Chen Wei Lu Lei Liao Weida Hu 《Advanced functional materials》2016,26(33):6084-6090
In recent years, 2D layered materials have been considered as promising photon absorption channel media for next‐generation phototransistors due to their atomic thickness, easily tailored single‐crystal van der Waals heterostructures, ultrafast optoelectronic characteristics, and broadband photon absorption. However, the photosensitivity obtained from such devices, even under a large bias voltage, is still unsatisfactory until now. In this paper, high‐sensitivity phototransistors based on WS2 and MoS2 are proposed, designed, and fabricated with gold nanoparticles (AuNPs) embedded in the gate dielectric. These AuNPs, located between the tunneling and blocking dielectric, are found to enable efficient electron trapping in order to strongly suppress dark current. Ultralow dark current (10?11 A), high photoresponsivity (1090 A W?1), and high detectivity (3.5 × 1011 Jones) are obtained for the WS2 devices under a low source/drain and a zero gate voltage at a wavelength of 520 nm. These results demonstrate that the floating‐gate memory structure is an effective configuration to achieve high‐performance 2D electronic/optoelectronic devices. 相似文献
15.
High‐Performance Near‐IR Photodetector Using Low‐Bandgap MA0.5FA0.5Pb0.5Sn0.5I3 Perovskite 下载免费PDF全文
Xiaobao Xu Chu‐Chen Chueh Peifeng Jing Zhibin Yang Xueliang Shi Ting Zhao Lih Y. Lin Alex K.‐Y. Jen 《Advanced functional materials》2017,27(28)
Photodetectors with ultrafast response are explored using inorganic/organic hybrid perovskites. High responsivity and fast optoelectronic response are achieved due to the exceptional semiconducting properties of perovskite materials. However, most of the perovskite‐based photodetectors exploited to date are centered on Pb‐based perovskites, which only afford spectral response across the visible spectrum. This study demonstrates a high‐performance near‐IR (NIR) photodetector using a stable low‐bandgap Sn‐containing perovskite, (CH3NH3)0.5(NH2CHNH2)0.5Pb0.5Sn0.5I3 (MA0.5FA0.5Pb0.5Sn0.5I3), which is processed with an antioxidant additive, ascorbic acid (AA). The addition of AA effectively strengthens the stability of Sn‐containing perovskite against oxygen, thereby significantly inhibiting the leakage current. Consequently, the derived photodetector shows high responsivity with a detectivity of over 1012 Jones ranging from 800 to 970 nm. Such low‐cost, solution processable NIR photodetectors with high performance show promising potential for future optoelectronic applications. 相似文献
16.
Experimental Evidence of Anisotropic and Stable Charged Excitons (Trions) in Atomically Thin 2D ReS2
Xiaofan Wang Keisuke Shinokita Yuhei Miyauchi Nguyen Thanh Cuong Susumu Okada Kazunari Matsuda 《Advanced functional materials》2019,29(51)
Experimentally observed, stable trions with large binding energy (≈25 meV) in atomically thin monolayer 2D transition metal dichalcogenides MX2 (M = Mo, W, X = S, Se, and Te) with an isotropic crystal structure have been extensively studied. In contrast, the characteristics of trions in atomically thin 2D materials with an anisotropic crystal structure are not completely understood. Low‐temperature photoluminescence (PL) spectroscopy in few‐layer ReS2 with an anisotropic crystal structure by applying a gate voltage is described. A new PL peak that emerges below the lower‐energy side of neutral excitons obtained by tuning the gate voltages is attributed to emission from negative trions. Furthermore, the trion binding energy that is strongly dependent on the layer thickness reaches a large value of ≈60 meV in 1L–ReS2, which is ≈2 times larger than that in other isotropic 2D materials (MX2). The enhancement of the binding energy reflects the quasi‐1D nature of the trions in anisotropic atomically thin ReS2. These experimental observations will promote a better understanding of the optical response and applications in new categories of the anisotropic atomically thin 2D materials with a quasi‐1D nature. 相似文献
17.
Nicola Curreli Michele Serri Davide Spirito Emanuele Lago Elisa Petroni Beatriz Martín‐García Antonio Politano Bekir Gürbulak Songül Duman Roman Krahne Vittorio Pellegrini Francesco Bonaccorso 《Advanced functional materials》2020,30(13)
Layered semiconductors of the IIIA–VIA group have attracted considerable attention in (opto)electronic applications thanks to their atomically thin structures and their thickness‐dependent optical and electronic properties, which promise ultrafast response and high sensitivity. In particular, 2D indium selenide (InSe) has emerged as a promising candidate for the realization of thin‐film field effect transistors and phototransistors due to its high intrinsic mobility (>102 cm2 V?1 s?1) and the direct optical transitions in an energy range suitable for visible and near‐infrared light detection. A key requirement for the exploitation of large‐scale (opto)electronic applications relies on the development of low‐cost and industrially relevant 2D material production processes, such as liquid phase exfoliation, combined with the availability of high‐throughput device fabrication methods. Here, a β polymorph of indium selenide (β‐InSe) is exfoliated in isopropanol and spray‐coated InSe‐based photodetectors are demonstrated, exhibiting high responsivity to visible light (maximum value of 274 A W?1 under blue excitation 455 nm) and fast response time (15 ms). The devices show a gate‐dependent conduction with an n‐channel transistor behavior. Overall, this study establishes that liquid phase exfoliated β‐InSe is a valid candidate for printed high‐performance photodetectors, which is critical for the development of industrial‐scale 2D material‐based optoelectronic devices. 相似文献
18.
Jie Li Zhenxing Wang Yao Wen Junwei Chu Lei Yin Ruiqing Cheng Le Lei Peng He Chao Jiang Liping Feng Jun He 《Advanced functional materials》2018,28(10)
As an emerging 2D layered material, Bi2O2Se has shown great potential for applications in thermoelectric and electronics, due to its high carrier mobility, near‐ideal subthreshold swing, and high air‐stability. Although Bi2O2Se has a suitable band gap for infrared (IR) applications, its photoresponse properties have not been investigated. Here, high‐quality ultrathin Bi2O2Se sheets are synthesized via a low‐pressure chemical vapor deposition method. The thickness of 90% Bi2O2Se sheets is below 10 nm and lateral sizes mainly distribute in the range of 7–11 µm. In addition, it is found that triangular sheets largely lack “O” content, even only 0.2 for Bi2O0.2Se. The near‐IR photodetection performance of Bi2O2Se nanosheets is systematically studied by variable temperature measurements. The response time, responsivity, and detectivity can approach up to 2.8 ms, 6.5 A W?1, and 8.3 × 1011 Jones, respectively. Additionally, the critical performance parameters, including responsivity, rising time, and decay time, remain at almost the same level when the temperature is changed from 80 to 300 K. These phenomena are likely due to the fact that as‐grown ultrathin Bi2O2Se sheets have no surface trap states and shallow defect energy levels. The findings indicate ultrathin Bi2O2Se sheets have great potentials for future applications in ultrafast, flexible near‐IR optoelectronic devices. 相似文献
19.
Zhen Wang Peng Wang Fang Wang Jiafu Ye Ting He Feng Wu Meng Peng Peisong Wu Yunfeng Chen Fang Zhong Runzhang Xie Zhuangzhuang Cui Liang Shen Qinghua Zhang Lin Gu Man Luo Yang Wang Huawei Chen Peng Zhou Anlian Pan Xiaohao Zhou Lili Zhang Weida Hu 《Advanced functional materials》2020,30(5)
2D layered materials are an emerging class of low‐dimensional materials with unique physical and structural properties and extensive applications from novel nanoelectronics to multifunctional optoelectronics. However, the widely investigated 2D materials are strongly limited in high‐performance electronics and ultrabroadband photodetectors by their intrinsic weaknesses. Exploring the new and narrow bandgap 2D materials is very imminent and fundamental. A narrow‐bandgap noble metal dichalcogenide (PtS2) is demonstrated in this study. The few‐layer PtS2 field‐effect transistor exhibits excellent electronic mobility exceeding 62.5 cm2 V?1 s?1 and ultrahigh on/off ratio over 106 at room temperature. The temperature‐dependent conductance and mobility of few‐layer PtS2 transistors show a direct metal‐to‐insulator transition and carrier scattering mechanisms, respectively. Remarkably, 2D PtS2 photodetectors with broadband photodetection from visible to mid‐infrared and a fast photoresponse time of 175 µs at 830 nm illumination for the first time are obtained at room temperature. Our work opens an avenue for 2D noble‐metal dichalcogenides to be applied in high‐performance electronic and mid‐infrared optoelectronic devices. 相似文献
20.
Novel and Enhanced Optoelectronic Performances of Multilayer MoS2–WS2 Heterostructure Transistors 下载免费PDF全文
Nengjie Huo Jun Kang Zhongming Wei Shu‐Shen Li Jingbo Li Su‐Huai Wei 《Advanced functional materials》2014,24(44):7025-7031
Van der Waals heterostructures designed by assembling isolated two‐dimensional (2D) crystals have emerged as a new class of artificial materials with interesting and unusual physical properties. Here, the multilayer MoS2–WS2 heterostructures with different configurations are reported and their optoelectronic properties are studied. It is shown that the new heterostructured material possesses new functionalities and superior electrical and optoelectronic properties that far exceed the one for their constituents, MoS2 or WS2. The vertical transistor exhibits a novel rectifying and bipolar behavior, and can also act as photovoltaic cell and self‐driven photodetector with photo‐switching ratio exceeding 103. The planar device also exhibits high field‐effect ON/OFF ratio (>105), high electron mobility of 65 cm2/Vs, and high photoresponsivity of 1.42 A/W compared to that in isolated multilayer MoS2 or WS2 nanoflake transistors. The results suggest that formation of MoS2–WS2 heterostructures could significantly enhance the performance of optoelectronic devices, thus open up possibilities for future nanoelectronic, photovoltaic, and optoelectronic applications. 相似文献