A General Approach to Probe Dynamic Operation and Carrier Mobility in Field‐Effect Transistors with Nonuniform Accumulation

Revealing the intrinsic electrical properties is the basis of understanding new functional materials and developing their applications. However, in nonideal field‐effect transistors (FETs), conventional current–voltage characterizations do not accurately probe charge transport, particularly for newly developed semiconductors. Here, a generalized gated four‐probe (G‐GFP) technique is developed, which detects dynamic changes in carrier accumulation and transport. The technique is suitable for exploring the intrinsic properties of semiconductors in FETs with arbitrary contacts and in any operational regimes above the threshold. Application to simulated transistors confirms its accuracy in probing the evolution of channel potential, drift field, and gate‐dependent carrier mobility for devices with a contact‐limited operation and disordered semiconductors. Comparative experiments are performed based on FETs with various materials, device structures, and operational temperatures. The G‐GFP technique proves to exclude the various injection properties, to detect in situ how carriers are accumulated, and to clarify carrier mobility of the semiconductors. In particular, the well‐known “double‐slope” features in the current–voltage relations are controllably generated and their origins are identified. The approach could be used to explore electronic properties of newly developed materials such as organic, oxide, or 2D semiconductors.     

Coordinatable and High Charge‐Carrier‐Mobility Water‐Soluble Conjugated Copolymers for Effective Aqueous‐Processed Polymer–Nanocrystal Hybrid Solar Cells and OFET Applications

A water‐soluble conjugated polymer (WCP) poly[(3,4‐dibromo‐2,5‐thienylene vinylene)‐co‐(p‐phenylene‐vinylene)] (PBTPV), containing thiophene rings with high charge‐carrier mobility and benzene rings with excellent solubility is designed and prepared through Wessling polymerization. The PBTPV precursor can be easily processed by employing water or alcohols as the solvents, which are clean, environmentally friendly, and non‐toxic compared with the highly toxic organic solvents such as chloroform and chlorobenzene. As a novel photoelectric material, PBTPV presents excellent hole‐transport properties with a carrier mobility of 5 × 10^?4 cm² V^?1 s^?1 measured in an organic field‐effect transistor device. By integrating PBTPV with aqueous CdTe nanocrystals (NCs) to produce the active layer of water‐processed hybrid solar cells, the devices exhibit effective power conversion efficiency up to 3.3%. Moreover, the PBTPV can form strong coordination interactions with the CdTe NCs through the S atoms on the thiophene rings, and effective coordination with other nanoparticles can be reasonably expected.     

High Bulk Electron Mobility Diketopyrrolopyrrole Copolymers with Perfluorothiophene

The question of designing high electron mobility polymers by increasing the planarization using diffusive nonbonding heteroatom interactions in diketopyrrolopyrrole polymers is addressed in this. For this, three different diketopyrrolo[3,4‐c]pyrrole (DPP) derivatives with thienyl‐, 2‐pyridinyl‐, and phenyl‐flanked cores are copolymerized with an electron‐rich thiophene unit as well as an electron‐deficient 3,4‐difluorothiophene unit as comonomer to obtain diverse polymeric DPPs which vary systematically in their structures. The crystallinity differs significantly with clear trends on varying both flanking unit and comonomer. The optical gap and energy levels depend more on the nature of the flanking aryl units rather than on fluorination. Additionally, the charge transport properties are compared using different methods to differentiate between interface or orientation effects and bulk charge carrier transport. In organic field effect transistor devices with very high electron as well as hole mobilities (up to 0.6 cm² V^?1 s^?1) are obtained and fluorination leads to a more pronounced n‐type nature in all polymers, resulting in ambipolar behavior in otherwise p‐type materials. In contrast, space‐charge limited current measurements show a strong influence of the flanking units only on electron mobilities. Especially, the elegant synthetic strategy of combining pyridyl flanking units with difluorothiophene as the comonomer culminates in a record bulk electron mobility of 4.3 × 10^?3 cm² V^?1 s^?1 in polymers.     

Liquid‐Crystalline Perylene Diester Polymers with Tunable Charge‐Carrier Mobility

New classes of liquid‐crystalline semiconductor polymers based on perylene diester benzimidazole and perylene diester imide mesogens are reported. Two highly soluble side‐chain polymers, poly(perylene diester benzimidazole acrylate) (PPDB) and poly(perylene diester imide acrylate) (PPDI) are synthesized by nitroxide‐mediated radical polymerization (NMRP). PPDB shows n‐type semiconductor performance with electron mobilities of 3.2 × 10^?4 cm² V^?1 s^?1 obtained in a diode configuration by fitting the space‐charge‐limited currents (SCLC) according to the Mott–Gurney equation. Interestingly, PPDI performs preferentially as a p‐type material with a hole mobility of 1.5 × 10^?4 cm² V^?1 s^?1, which is attributed to the less electron‐deficient perylene core of PPDI compared to PPDB. Optical properties are investigated by UV‐vis and fluorescence spectroscopy. The extended π‐conjugation system due to the benzimidazole unit of PPDB leads to a considerably broader absorption in the visible region compared to PPDI. HOMO and LUMO levels of the polymers are also determined by cyclic voltammetry; the resulting energy band‐gaps are 1.86 eV for PPDB and 2.16 eV for PPDI. Thermal behavior and liquid crystallinity are studied by differential scanning calorimetry, polarized optical microscopy, and X‐ray diffraction measurements. The results indicate liquid‐crystalline order of the polymers over a broad temperature range. These thermal, electrical, and optical properties make the perylene side‐chain polymers attractive materials for organic photovoltaics.     

Dielectric–Semiconductor Interface Limits Charge Carrier Motion at Elevated Temperatures and Large Carrier Densities in a High‐Mobility Organic Semiconductor

The fundamental nature of charge transport in highly ordered organic semiconductors is under constant debate. At cryogenic temperatures, effects within the semiconductor such as traps or the interaction of charge carriers with the insulating substrate (dipolar disorder or Fröhlich polarons) are known to limit carrier motion. In comparison, at elevated temperatures, where charge carrier mobility often also decreases as function of temperature, phonon scattering or dynamic disorder are frequently discussed mechanisms, but the exact microscopic cause that limits carrier motion is debated. Here, the mobility in the temperature range between 200 and 420 K as function of carrier density is explored in highly ordered perylene‐diimide from 3 to 9 nm thin films. It is observed that above room temperature increasing the gate electric field or decreasing the semiconducting film thickness leads to a suppression of the charge carrier mobility. Via X‐ray diffraction measurements at various temperatures and electric fields, changes of the thin film structure are excluded as cause for the observed mobility decrease. The experimental findings point toward scattering sites or traps at the semiconductor–dielectric interface, or in the dielectric as limiting factor for carrier mobility, whose role is usually neglected at elevated temperatures.     

Kinetically Controlled Crystallization in Conjugated Polymer Films for High‐Performance Organic Field‐Effect Transistors

Ordering of semiconducting polymers in thin films from the nano to microscale is strongly correlated with charge transport properties as well as organic field‐effect transistor performance. This paper reports a method to control nano to microscale ordering of poly{[N,N′‐bis(2‐octyldodecyl)‐naphthalene‐1,4,5,8‐bis(dicarboximide)‐2,6‐diyl]‐alt‐5,5′‐(2,2′‐bithiophene)} (P(NDI2OD‐T2)) thin films by precisely regulating the solidification rate from the metastable state just before crystallization. The proposed simple but effective approach, kinetically controlled crystallization, achieves optimized P(NDI2OD‐T2) films with large polymer domains, long range ordered fibrillar structures, and molecular orientation preferable for electron transport leading to dramatic morphological changes in both polymer domain sizes at the micrometer scale and molecular packing structures at nanoscales. Structural changes significantly increase electron mobilities up to 3.43 ± 0.39 cm² V^?1 s^?1 with high reliability, almost two orders of enhancement compared with devices from naturally dried films. Small contact resistance is also obtained for electron injection (0.13 MΩ cm), low activation energy (62.51 meV), and narrow density of states distribution for electron transport in optimized thin films. It is believed that this study offers important insight into the crystallization of conjugated polymers that can be broadly applied to optimize the morphology of semiconducting polymer films for solution processed organic electronic devices.     

Ultraviolet‐Light‐Induced Reversible and Stable Carrier Modulation in MoS2 Field‐Effect Transistors

The tuning of charge carrier concentrations in semiconductor is necessary in order to approach high performance of the electronic and optoelectronic devices. It is demonstrated that the charge‐carrier density of single‐layer (SL), bilayer (BL), and few‐layer (FL) MoS₂ nanosheets can be finely and reversibly tuned with N₂ and O₂ gas in the presence of deep‐ultraviolet (DUV) light. After exposure to N₂ gas in the presence of DUV light, the threshold voltages of SL, BL, and FL MoS₂ field‐effect transistors (FETs) shift towards negative gate voltages. The exposure to N₂ gas in the presence of DUV light notably improves the drain‐to‐source current, carrier density, and charge‐carrier mobility for SL, BL, and FL MoS₂ FETs. Subsequently, the same devices are exposed to O₂ gas in the presence of DUV light for different periods and the electrical characteristics are completely recovered after a certain time. The doping by using the combination of N₂ and O₂ gas with DUV light provides a stable, effective, and facile approach for improving the performance of MoS₂ electronic devices.     

Alkyl‐Chain‐Length‐Independent Hole Mobility via Morphological Control with Poly(3‐alkylthiophene) Nanofibers

The field‐effect transistor (FET) and diode characteristics of poly(3‐alkylthiophene) (P3AT) nanofiber layers deposited from nanofiber dispersions are presented and compared with those of layers deposited from molecularly dissolved polymer solutions in chlorobenzene. The P3AT n‐alkyl‐side‐chain length was varied from 4 to 9 carbon atoms. The hole mobilities are correlated with the interface and bulk morphology of the layers as determined by UV–vis spectroscopy, transmission electron microscopy (TEM) with selected area electron diffraction (SAED), atomic force microscopy (AFM), and polarized carbon K‐edge near edge X‐ray absorption fine structure (NEXAFS) spectroscopy. The latter technique reveals the average polymer orientation in the accumulation region of the FET at the interface with the SiO₂ gate dielectric. The previously observed alkyl‐chain‐length‐dependence of the FET mobility in P3AT films results from differences in molecular ordering and orientation at the dielectric/semiconductor interface, and it is concluded that side‐chain length does not determine the intrinsic mobility of P3ATs, but rather the alkyl chain length of P3ATs influences FET diode mobility only through changes in interfacial bulk ordering in solution processed films.     

Accurate Extraction of Charge Carrier Mobility in 4‐Probe Field‐Effect Transistors

Charge carrier mobility is an important characteristic of organic field‐effect transistors (OFETs) and other semiconductor devices. However, accurate mobility determination in FETs is frequently compromised by issues related to Schottky‐barrier contact resistance, that can be efficiently addressed by measurements in 4‐probe/Hall‐bar contact geometry. Here, it is shown that this technique, widely used in materials science, can still lead to significant mobility overestimation due to longitudinal channel shunting caused by voltage probes in 4‐probe structures. This effect is investigated numerically and experimentally in specially designed multiterminal OFETs based on optimized novel organic‐semiconductor blends and bulk single crystals. Numerical simulations reveal that 4‐probe FETs with long but narrow channels and wide voltage probes are especially prone to channel shunting, that can lead to mobilities overestimated by as much as 350%. In addition, the first Hall effect measurements in blended OFETs are reported and how Hall mobility can be affected by channel shunting is shown. As a solution to this problem, a numerical correction factor is introduced that can be used to obtain much more accurate experimental mobilities. This methodology is relevant to characterization of a variety of materials, including organic semiconductors, inorganic oxides, monolayer materials, as well as carbon nanotube and semiconductor nanocrystal arrays.     

Modeling Polymer Dielectric/Pentacene Interfaces: On the Role of Electrostatic Energy Disorder on Charge Carrier Mobility

Force‐field and quantum‐chemical calculations are combined to model the packing of pentacene molecules at the atomic level on two polymer dielectric layers (poly(methyl methacrylate) (PMMA) versus polystyrene (PS)) widely used in field‐effect transistors and to assess the impact of electrostatic interactions at the interface on the charge mobility values in the pentacene layers. The results show unambiguously that the electrostatic interactions introduce a significant energetic disorder in the pentacene layer in contact with the polymer chains; a drop in the hole mobility by a factor of 5 is predicted with PS chains while a factor of 60 is obtained for PMMA due to the presence of polar carbonyl groups.     

Effect of Donor Molecular Structure and Gate Dielectric on Charge‐Transporting Characteristics for Isoindigo‐Based Donor–Acceptor Conjugated Polymers

This study investigates the effect of the molecular structure of three different donor units, naphthalene (Np), bithiophene (BT), and thiophene–vinylene–thiophene (TVT), in isoindigo (IIG)‐based donor –acceptor conjugated polymers (PIIG‐Np, PIIG‐BT and PIIG‐TVT) on the charge carrier mobility of organic field‐effect transistors (OFETs). The charge transport properties of three different IIG‐based polymers strongly depend on donor units. PIIG–BT OFETs showed 50 times higher hole mobility (0.63 cm² V^?1 s^?1) than PIIG–TVT and PIIG–Np ones of ≈ 0.01 cm² V^?1 s^?1 with CYTOP dielectric though the BT units have less planarity than the TVT and Np units. The reasons for the different mobility in IIG‐based polymers are studied by analyzing the energy structure by absorption spectra, calculating transport levels by density functional theory, investigating the in‐ and out‐of‐plane crystallinity of thin film by grazing‐incidence wide‐angle X‐ray scattering, and extracting key transport parameters via low‐temperature measurements. By combining theoretical, optical, electrical, and structural analyses, this study finds that the large difference in OFET mobility mainly originates from the transport disorders determined by the different microcrystal structure, rather than the intrinsic transport properties in isolated chains for different polymers.     

Enhancing Field‐Effect Mobility of Conjugated Polymers Through Rational Design of Branched Side Chains

The design of polymer semiconductors possessing effective π–π intermolecular interactions coupled with good solution processability remains a challenge. Structure‐property relationships associated with side chain structure, π–π intermolecular interactions, polymer solubility, and charge carrier transport are reported for a donor–acceptor(1)‐donor–acceptor(2) polymer: 5‐Decylheptadecyl (5‐DH), 2‐tetradecyl (2‐DT), and linear n‐octadecyl (OD) chains are substituted onto a polymer backbone consisting of terthiophene units (T) between two different electron acceptors, benzothiadiazole (B), and diketopyrrolopyrrole (D), pTBTD, to afford pTBTD‐5DH, pTBTD‐2DT, and pTBTD‐OD, respectively. In the 5‐DH side chain, the branching position is remote from the polymer backbone, whereas it is proximal in 2‐DT. This study demonstrates that incorporation of branched side chains where the branching position is remote from the polymer backbone merges the advantages of improved solubility from branched units with effective π–π intermolecular interactions normally associated with linear chains on conjugated polymers. pTBTD‐5DH exhibits superior qualities with respect to the degree of polymerization, solution processability, π–π interchain stacking, and charge carrier transport relative to the other analogs. pTBTD‐5DH exhibits a field‐effect hole mobility of up to 2.95 cm² V^–1 s^–1, a factor of 3–7 times that achieved with pBDT6‐DT and pBDT6‐OD.     

Anisotropy of Charge Transport in a Uniaxially Aligned and Chain‐Extended,High‐Mobility,Conjugated Polymer Semiconductor

Charge transport in the ribbon phase of poly(2,5‐bis(3‐alkylthiophen‐2‐yl)thieno[3,2‐b]thiophene) (PBTTT)—one of the most highly ordered, chain‐extended crystalline microstructures available in a conjugated polymer semiconductor—is studied. Ribbon‐phase PBTTT has previously been found not to exhibit high carrier mobilities, but it is shown here that field‐effect mobilities depend strongly on the device architecture and active interface. When devices are constructed such that the ribbon‐phase films are in contact with either a polymer gate dielectric or an SiO₂ gate dielectric modified by a hydrophobic, self‐assembled monolayer, high mobilities of up to 0.4 cm² V^?1 s^?1 can be achieved, which is comparable to those observed previously in terrace‐phase PBTTT. In uniaxially aligned, zone‐cast films of ribbon‐phase PBTTT the mobility anisotropy is measured for transport both parallel and perpendicular to the polymer chain direction. The mobility anisotropy is relatively small, with the mobility along the polymer chain direction being higher by a factor of 3–5, consistent with the grain size encountered in the two transport directions.     

Measurement of Charge‐Density Dependence of Carrier Mobility in an Organic Semiconductor Blend

Here, a new methodology for analyzing the charge‐density dependence of carrier mobility in organic semiconductors, applicable to the low‐charge‐density regime (10¹⁴–10¹⁷ cm^?3) corresponding to the operation conditions of many organic optoelectronic devices, is reported. For the P3HT/PCBM blend photovoltaic devices studied herein, the hole mobility µ is found to depend on charge density n according to a power law µ(n) ∝ n^δ, where δ = 0.35. This dependence is shown to be consistent with an energetic disorder model based upon an exponential tail of localized intra‐band states.     

The Influence of Film Morphology in High‐Mobility Small‐Molecule:Polymer Blend Organic Transistors

Organic field‐effect transistors (OFETs) based upon blends of small molecular semiconductors and polymers show promise for high performance organic electronics applications. Here the charge transport characteristics of high mobility p‐channel organic transistors based on 2,8‐difluoro‐5,11‐bis(triethylsilylethynyl) anthradithiophene:poly(triarylamine) blend films are investigated. By simple alteration of the film processing conditions two distinct film microstructures can be obtained: one characterized by small spherulitic grains (SG) and one by large grains (LG). Charge transport measurements reveal thermally activated hole transport in both SG and LG film microstructures with two distinct temperature regimes. For temperatures >115 K, gate voltage dependent activation energies (E_A) in the range of 25–60 meV are derived. At temperatures <115 K, the activation energies are smaller and typically in the range 5–30 meV. For both film microstructures hole transport appears to be dominated by trapping at the grain boundaries. Estimates of the trap densities suggests that LG films with fewer grain boundaries are characterized by a reduced number of traps that are less energetically disordered but deeper in energy than for small SG films. The effects of source and drain electrode treatment with self‐assembled monolayers (SAMs) on current injection is also investigated. Fluorinated thiol SAMs were found to alter the work function of gold electrodes by up to ～1 eV leading to a lower contact resistance. However, charge transport analysis suggests that electrode work function is not the only parameter to consider for efficient charge injection.     

High Carrier Density and Metallic Conductivity in Poly(3‐hexylthiophene) Achieved by Electrostatic Charge Injection

The use of electrostatic charge injection (i.e., the transverse field effect) to induce both very large two‐dimensional hole densities (～ 10¹⁵ charges cm^–2) and metallic conductivities in poly(3‐hexylthiophene) (P3HT) is reported. Films of P3HT are electrostatically gated by a solution‐deposited polymer‐electrolyte gate dielectric in a field‐effect‐transistor configuration. Exceptionally high hole field‐effect mobilities (up to 0.7 cm² V^–1 s^–1) are measured concurrently with large hole densities, resulting in an extremely large sheet conductance of 200 μS sq.^–1. The large room‐temperature conductivity of 1000 S cm^–1 together with the very low measured activation energies (0.7–4 meV) suggest that the metal–insulator transition in P3HT is achieved. A maximum in sheet conductance versus charge density is also observed, which may result from near‐filling of the valence band or from charge correlations that lower the carrier mobility. Importantly, the large hole densities in P3HT are achieved using capacitive coupling between the polymer‐electrolyte gate dielectric and P3HT (i.e., the field effect) and not via chemical or electrochemical doping. Electrostatic control of carrier density up to 10¹⁵ charges cm^–2 (～ 10²² charges cm^–3) opens opportunities to explore systematically the importance of charge‐correlation effects on transport in conjugated polymers without the structural rearrangement associated with chemical or electrochemical doping.     

Organic Field‐Effect Transistors: A 3D Kinetic Monte Carlo Simulation of the Current Characteristics in Micrometer‐Sized Devices

The electrical properties of organic field‐effect transistors (OFETs) are usually characterized by applying models initially developed for inorganic‐based devices, which often implies the use of approximations that might be inappropriate for organic semiconductors. These approximations have brought limitations to the understanding of the device physics associated with organic materials. A strategy to overcome this issue is to establish straightforward connections between the macroscopic current characteristics and microscopic charge transport in OFETs. Here, a 3D kinetic Monte Carlo model is developed that goes beyond both the conventional assumption of zero channel thickness and the gradual channel approximation to simulate carrier transport and current. Using parallel computing and a new algorithm that significantly improves the evaluation of electric potential within the device, this methodology allows the simulation of micrometer‐sized OFETs. The current characteristics of representative OFET devices are well reproduced, which provides insight into the validity of the gradual channel approximation in the case of OFETs, the impact of the channel thickness, and the nature of microscopic charge transport.     

Temperature‐Resolved Local and Macroscopic Charge Carrier Transport in Thin P3HT Layers

Previous investigations of the field‐effect mobility in poly(3‐hexylthiophene) (P3HT) layers revealed a strong dependence on molecular weight (MW), which was shown to be closely related to layer morphology. Here, charge carrier mobilities of two P3HT MW fractions (medium‐MW: M_n = 7 200 g mol^?1; high‐MW: M_n = 27 000 g mol^?1) are probed as a function of temperature at a local and a macroscopic length scale, using pulse‐radiolysis time‐resolved microwave conductivity (PR‐TRMC) and organic field‐effect transistor measurements, respectively. In contrast to the macroscopic transport properties, the local intra‐grain mobility depends only weakly on MW (being in the order of 10^?2 cm² V^?1 s^?1) and being thermally activated below the melting temperature for both fractions. The striking differences of charge transport at both length scales are related to the heterogeneity of the layer morphology. The quantitative analysis of temperature‐dependent UV/Vis absorption spectra according to a model of F. C. Spano reveals that a substantial amount of disordered material is present in these P3HT layers. Moreover, the analysis predicts that aggregates in medium‐MW P3HT undergo a “pre‐melting” significantly below the actual melting temperature. The results suggest that macroscopic charge transport in samples of short‐chain P3HT is strongly inhibited by the presence of disordered domains, while in high‐MW P3HT the low‐mobility disordered zones are bridged via inter‐crystalline molecular connections.     

Very Low Degree of Energetic Disorder as the Origin of High Mobility in an n‐channel Polymer Semiconductor

Charge transport is investigated in high‐mobility n‐channel organic field‐effect transistors (OFETs) based on poly{[N,N′‐bis(2‐octyldodecyl)‐naphthalene‐1,4,5,8‐bis(dicarboximide)‐2,6‐diyl]‐alt‐5,5′‐(2,2′‐bithiophene)} (P(NDI2OD‐T2), Polyera ActivInk? N2200) with variable‐temperature electrical measurements and charge‐modulation spectroscopy. Results indicate an unusually uniform energetic landscape of sites for charge‐carrier transport along the channel of the transistor as the main reason for the observed high‐electron mobility. Consistent with a lateral field‐independent transport at temperatures down to 10 K, the reorganization energy is proposed to play an important role in determining the activation energy for the mobility. Quantum chemical calculations, which show an efficient electronic coupling between adjacent units and a reorganization energy of a few hundred meV, are consistent with these findings.