All‐Carbon‐Electrode‐Based Endurable Flexible Perovskite Solar Cells

Endured, low‐cost, and high‐performance flexible perovskite solar cells (PSCs) featuring lightweight and mechanical flexibility have attracted tremendous attention for portable power source applications. However, flexible PSCs typically use expensive and fragile indium–tin oxide as transparent anode and high‐vacuum processed noble metal as cathode, resulting in dramatic performance degradation after continuous bending or thermal stress. Here, all‐carbon‐electrode‐based flexible PSCs are fabricated employing graphene as transparent anode and carbon nanotubes as cathode. All‐carbon‐electrode‐based flexible devices with and without spiro‐OMeTAD (2,2′,7,7′‐tetrakis‐(N,N‐di‐p‐methoxyphenylamine)‐9,9′‐spirobifluorene) hole conductor achieve power conversion efficiencies (PCEs) of 11.9% and 8.4%, respectively. The flexible carbon‐electrode‐based solar cells demonstrate superior robustness against mechanical deformation in comparison with their counterparts fabricated on flexible indium–tin oxide substrates. Moreover, all carbon‐electrode‐based flexible PSCs also show significantly enhanced stability compared to the flexible devices with gold and silver cathodes under continuous light soaking or 60 °C thermal stress in air, retaining over 90% of their original PCEs after 1000 h. The promising durability and stability highlight that flexible PSCs are fully compatible with carbon materials and pave the way toward the realization of rollable and low‐cost flexible perovskite photovoltaic devices.     

All‐Solution‐Processed Indium‐Free Transparent Composite Electrodes based on Ag Nanowire and Metal Oxide for Thin‐Film Solar Cells

Fully solution‐processed Al‐doped ZnO/silver nanowire (AgNW)/Al‐doped ZnO/ZnO multi‐stacked composite electrodes are introduced as a transparent, conductive window layer for thin‐film solar cells. Unlike conventional sol–gel synthetic pathways, a newly developed combustion reaction‐based sol–gel chemical approach allows dense and uniform composite electrodes at temperatures as low as 200 °C. The resulting composite layer exhibits high transmittance (93.4% at 550 nm) and low sheet resistance (11.3 Ω sq^‐1), which are far superior to those of other solution‐processed transparent electrodes and are comparable to their sputtered counterparts. Conductive atomic force microscopy reveals that the multi‐stacked metal‐oxide layers embedded with the AgNWs enhance the photocarrier collection efficiency by broadening the lateral conduction range. This as‐developed composite electrode is successfully applied in Cu(In_1‐x,Ga_x)S₂ (CIGS) thin‐film solar cells and exhibits a power conversion efficiency of 11.03%. The fully solution‐processed indium‐free composite films demonstrate not only good performance as transparent electrodes but also the potential for applications in various optoelectronic and photovoltaic devices as a cost‐effective and sustainable alternative electrode.     

High‐Efficiency Organic Solar Cells Based on Preformed Poly(3‐hexylthiophene) Nanowires

Bulk heterojunction solar cells based on blends of poly(3‐hexylthiophene) (P3HT) and phenyl‐C61‐butyric acid methyl ester (PC₆₁BM) are fabricated using self‐assembled P3HT nanowires in a marginal solvent without post‐treatments. The interconnected network structures of self‐organized P3HT nanowires create continuous percolation pathways through the active layer and contribute to enhanced carrier mobility. The morphology and photovoltaic properties are studied as a function of ageing time of the P3HT precursor solution. Optimal photovoltaic properties are found at 60 h ageing time, which increases both light absorption and charge balance. Multilayered solar cells with a compositionally graded structure are fabriacted using preformed P3HT nanowires by inserting a pure P3HT donor phase onto the hole‐collecting electrode. Applying optimized annealing conditions to the P3HT buffer layer achieves an enhanced hole mobility and a power conversion efficiency of 3.94%. The introduction of a compositionally graded device structure, which contains a P3HT‐only region, reduces charge recombination and electron injection to the indium tin oxide (ITO) electrode and enhances the device properties. These results demonstrate that preformed semiconductor nanowires and compositionally graded structures constitute a promising approach to the control of bulk heterojunction morphology and charge‐carrier mobility.     

Hybrid Silver Nanowire and Graphene‐Based Solution‐Processed Transparent Electrode for Organic Optoelectronics

The research on transparent conductive electrodes is in rapid ascent in order to respond to the requests of novel optoelectronic devices. The synergic coupling of silver nanowires (AgNWs) and high‐quality solution‐processable exfoliated graphene (EG) enables an efficient transparent conductor with low‐surface roughness of 4.6 nm, low sheet resistance of 13.7 Ω sq^?1 at high transmittance, and superior mechanical and chemical stabilities. The developed AgNWs–EG films are versatile for a wide variety of optoelectronics. As an example, when used as a bottom electrode in organic solar cell and polymer light‐emitting diode, the devices exhibit a power conversion efficiency of 6.6% and an external quantum efficiency of 4.4%, respectively, comparable to their commercial indium tin oxide counterparts.     

Locally Welded Silver Nano‐Network Transparent Electrodes with High Operational Stability by a Simple Alcohol‐Based Chemical Approach

As an indispensable aspect of emerging flexible optoelectronics, flexible transparent electrodes, especially those comprised of metal nanowires, have attracted great attentions recently. Welding the nanowire junctions is an effective strategy for reducing the sheet resistance and improving the operational stability of flexible nanowire electrode in practical applications. Herein, a simple alcohol‐based solution approach is proposed to weld crossed silver nanowires by chemically growing silver “solder” at the junctions of the nanowires, forming transparent silver nano‐network electrodes with improved electrical conductivity and operational stability. Remarkably, silver nano‐networks can be rapidly formed by this simple approach under ambient condition and room temperature, requiring no assistance from heat, light, electrical current, or mechanical pressure. Furthermore, our results show that the nano‐network electrode formed from large diameter nanowires offers a better operational stability, whose trend is opposite to that of the untreated electrodes. To demonstrate the potential application of the highly stable silver nano‐network from large diameter nanowires, organic solar cells fabricated on the nano‐network electrode incorporated with silicon dioxide nanoparticles achieve comparable performance to the ITO control device. Consequently, strategy demonstrated in this work can contribute to low‐cost and highly stable transparent electrodes in emerging flexible optoelectronics.     

Highly Robust Indium‐Free Transparent Conductive Electrodes Based on Composites of Silver Nanowires and Conductive Metal Oxides

A hybrid approach for the realization of In‐free transparent conductive layers based on a composite of a mesh of silver nanowires (NWs) and a conductive metal‐oxide is demonstrated. As metal‐oxide room‐temperature‐processed sol–gel SnO_x or Al:ZnO prepared by low‐temperature (100 °C) atomic layer deposition is used, respectively. In this concept, the metal‐oxide is intended to fuse the wires together and also to “glue” them to the substrate. As a result, a low sheet resistance down to 5.2 Ω sq^‐1 is achieved with a concomitant average transmission of 87%. The adhesion of the NWs to the substrate is significantly improved and the resulting composites withstand adhesion tests without loss in conductivity. Owing to the low processing temperatures, this concept allows highly robust, highly conductive, and transparent coatings even on top of temperature sensitive objects, for example, polymer foils, organic devices. These Indium‐ and PEDOT:PSS‐free hybrid layers are successfully implemented as transparent top‐electrodes in efficient all‐solution‐processed semitransparent organic solar cells. It is obvious that this approach is not limited to organic solar cells but will generally be applicable in devices which require transparent electrodes.     

Improved conversion efficiency of a‐Si:H/µc‐Si:H thin‐film solar cells by using annealed Al‐doped zinc oxide as front electrode material

In recent years, zinc oxide has been investigated as a front electrode material in hydrogenated amorphous silicon/hydrogenated microcrystalline silicon (a‐Si:H/µc‐Si:H) tandem solar cells. Such as for other transparent conducting oxide materials and applications, a proper balancing of transparency and conductivity is necessary. The latter is directly related to the density and the mobility of charge carriers. A high density of charge carriers increases conductivity but leads to a higher absorption of light in the near‐infrared part of the spectrum due to increased free‐carrier absorption. Hence, the only way to achieve high conductivity while keeping the transparency as high as possible relies on an increase of carrier mobility. The carrier density and the mobility of sputtered Al‐doped zinc oxide (ZnO:Al) can be tailored by a sequence of different annealing steps. In this work, we implemented such annealed ZnO:Al films as a front electrode in a‐Si:H/µc‐Si:H tandem solar cells and compared the results with those of reference cells grown on as‐deposited ZnO:Al. We observed an improvement of short‐circuit current density as well as open‐circuit voltage and fill factor. The gain in current density could be attributed to a reduction of both sub‐band‐gap absorption and free‐carrier absorption in the ZnO:Al. The higher open‐circuit voltage and fill factor are indicators of a better device quality of the silicon for cells grown on annealed ZnO:Al. Altogether, the annealing led to an improved initial conversion efficiency of 12.1%, which was a gain of +0.7% in absolute terms. Copyright © 2013 John Wiley & Sons, Ltd.     

Zr‐Doped Indium Oxide (IZRO) Transparent Electrodes for Perovskite‐Based Tandem Solar Cells

Parasitic absorption in transparent electrodes is one of the main roadblocks to enabling power conversion efficiencies (PCEs) for perovskite‐based tandem solar cells beyond 30%. To reduce such losses and maximize light coupling, the broadband transparency of such electrodes should be improved, especially at the front of the device. Here, the excellent properties of Zr‐doped indium oxide (IZRO) transparent electrodes for such applications, with improved near‐infrared (NIR) response, compared to conventional tin‐doped indium oxide (ITO) electrodes, are shown. Optimized IZRO films feature a very high electron mobility (up to ≈77 cm² V^?1 s^?1), enabling highly infrared transparent films with a very low sheet resistance (≈18 Ω □^?1 for annealed 100 nm films). For devices, this translates in a parasitic absorption of only ≈5% for IZRO within the solar spectrum (250–2500 nm range), to be compared with ≈10% for commercial ITO. Fundamentally, it is found that the high conductivity of annealed IZRO films is directly linked to promoted crystallinity of the indium oxide (In₂O₃) films due to Zr‐doping. Overall, on a four‐terminal perovskite/silicon tandem device level, an absolute 3.5 mA cm^?2 short‐circuit current improvement in silicon bottom cells is obtained by replacing commercial ITO electrodes with IZRO, resulting in improving the PCE from 23.3% to 26.2%.     

Inverted Layer‐By‐Layer Fabrication of an Ultraflexible and Transparent Ag Nanowire/Conductive Polymer Composite Electrode for Use in High‐Performance Organic Solar Cells

A highly flexible and transparent conductive electrode based on consecutively stacked layers of conductive polymer (CP) and silver nanowires (AgNWs) fully embedded in a colorless polyimide (cPI) is achieved by utilizing an inverted layer‐by‐layer processing method. This CP‐AgNW composite electrode exhibits a high transparency of >92% at wavelengths of 450–700 nm and a low resistivity of 7.7 Ω ?^?1, while its ultrasmooth surface provides a large contact area for conductive pathways. Furthermore, it demonstrates an unprecedentedly high flexibility and good mechanical durability during both outward and inward bending to a radius of 40 μm. Subsequent application of this composite electrode in organic solar cells achieves power conversion efficiencies as high as 7.42%, which represents a significant improvement over simply embedding AgNWs in cPI. This is attributed to a reduction in bimolecular recombination and an increased charge collection efficiency, resulting in performance comparable to that of indium tin oxide‐based devices. More importantly, the high mechanical stability means that only a very slight reduction in efficiency is observed with bending (<5%) to a radius of 40 μm. This newly developed composite electrode is therefore expected to be directly applicable to a wide range of high‐performance, low‐cost flexible electronic devices.     

Thin Films of Dendritic Anatase Titania Nanowires Enable Effective Hole‐Blocking and Efficient Light‐Harvesting for High‐Performance Mesoscopic Perovskite Solar Cells

To achieve high‐performance perovskite solar cells, especially with mesoscopic cell structure, the design of the electron transport layer (ETL) is of paramount importance. Highly branched anatase TiO₂ nanowires (ATNWs) with varied orientation are grown via a facile one‐step hydrothermal process on a transparent conducting oxide substrate. These films show good coverage with optimization obtained by controlling the hydrothermal reaction time. A homogeneous methyl­ammonium lead iodide (CH₃NH₃PbI₃) perovskite thin film is deposited onto these ATNW films forming a bilayer architecture comprising of a CH₃NH₃PbI₃ sensitized ATNW bottom layer and a CH₃NH₃PbI₃ capping layer. The formation, grain size, and uniformity of the perovskite crystals strongly depend on the degree of surface coverage and the thickness of the ATNW film. Solar cells constructed using the optimized ATNW thin films (220 nm in thickness) yield power conversion efficiencies up to 14.2% with a short‐circuit photocurrent density of 20.32 mA cm^?2, an open‐circuit photovoltage of 993 mV, and a fill factor of 0.70. The dendritic ETL and additional perovskite capping layer efficiently capture light and thus exhibit a superior light harvesting efficiency. The ATNW film is an effective hole‐blocking layer and efficient electron transport medium for excellent charge separation and collection within the cells.     

Novel Type‐II InAs/AlSb Core–Shell Nanowires and Their Enhanced Negative Photocurrent for Efficient Photodetection

The control of optical and transport properties of semiconductor heterostructures is crucial for engineering new nanoscale photonic and electrical devices with diverse functions. Core–shell nanowires are evident examples of how tailoring the structure, i.e., the shell layer, plays a key role in the device performance. However, III–V semiconductors bandgap tuning has not yet been fully explored in nanowires. Here, a novel InAs/AlSb core–shell nanowire heterostructure is reported grown by molecular beam epitaxy and its application for room temperature infrared photodetection. The core–shell nanowires are dislocation‐free with small chemical intermixing at the interfaces. They also exhibit remarkable radiative emission efficiency, which is attributed to efficient surface passivation and quantum confinement induced by the shell. A high‐performance core–shell nanowire phototransistor is also demonstrated with negative photoresponse. In comparison with simple InAs nanowire phototransistor, the core–shell nanowire phototransistor has a dark current two orders of magnitude smaller and a sixfold improvement in photocurrent signal‐to‐noise ratio. The main factors for the improved photodetector performance are the surface passivation, the oxide in the AlSb shell and the type‐II bandgap alignment. The study demonstrates the potential of type‐II core–shell nanowires for the next generation of photodetectors on silicon.     

Plasmonic‐Induced Photon Recycling in Metal Halide Perovskite Solar Cells

Organic–inorganic metal halide perovskite solar cells have emerged in the past few years to promise highly efficient photovoltaic devices at low costs. Here, temperature‐sensitive core–shell Ag@TiO₂ nanoparticles are successfully incorporated into perovskite solar cells through a low‐temperature processing route, boosting the measured device efficiencies up to 16.3%. Experimental evidence is shown and a theoretical model is developed which predicts that the presence of highly polarizable nanoparticles enhances the radiative decay of excitons and increases the reabsorption of emitted radiation, representing a novel photon recycling scheme. The work elucidates the complicated subtle interactions between light and matter in plasmonic photovoltaic composites. Photonic and plasmonic schemes such as this may help to move highly efficient perovskite solar cells closer to the theoretical limiting efficiencies.     

Insulator‐Conductor Type Transitions in Graphene‐Modified Silver Nanowire Networks: A Route to Inexpensive Transparent Conductors

Silver nanowire coatings are an attractive alternative to indium tin oxide for producing transparent conductors. To fabricate coatings with low sheet resistance required for touchscreen displays, a multi‐layer network of silver nanowires must be produced that may not be cost effective. This problem is counteracted here by modifying the electrical properties of an ultra‐low‐density nanowire network through local deposition of conducting graphene platelets. Unlike other solution‐processed materials, such as graphene oxide, our pristine graphene is free of oxygen functional groups, resulting in it being electrically conducting without the need for further chemical treatment. Graphene adsorption at inter‐wire junctions as well as graphene connecting adjacent wires contributes to a marked enhancement in electrical properties. Using our approach, the amount of nanowires needed to produce viable transparent electrodes could be more than 50 times less than the equivalent pristine high density nanowire networks, thus having major commercial implications. Using a laser ablation process, it is shown that the resulting films can be patterned into individual electrode structures, which is a pre‐requisite to touchscreen sensor fabrication.     

A stacked chalcopyrite thin‐film tandem solar cell with 1.2 V open‐circuit voltage

CuGaSe₂ (CGS) thin films were prepared on tin‐doped indium oxide (ITO) coated soda‐lime glass substrates by thermal co‐evaporation to fabricate transparent solar cells. The films consisted of columnar grains with a diameter of approximately 1 μm. Some deterioration of the transparency of the ITO was observed after deposition of the CGS film. The CGS solar cells were electrically connected in series with Cu(In,Ga)Se₂ (CIGS) solar cells and mechanically stacked on the CIGS cells to construct tandem cells. The tandem solar cell with the CGS cell as the top cell showed an efficiency of 7.4% and an open‐circuit voltage of 1.18 V (AM 1.5, total area). Copyright © 2003 John Wiley & Sons, Ltd.     

Grain Boundary and Interface Passivation with Core–Shell Au@CdS Nanospheres for High‐Efficiency Perovskite Solar Cells

The plasmonic characteristic of core–shell nanomaterials can effectively improve exciton‐generation/dissociation and carrier‐transfer/collection. In this work, a new strategy based on core–shell Au@CdS nanospheres is introduced to passivate perovskite grain boundaries (GBs) and the perovskite/hole transport layer interface via an antisolvent process. These core–shell Au@CdS nanoparticles can trigger heterogeneous nucleation of the perovskite precursor for high‐quality perovskite films through the formation of the intermediate Au@CdS–PbI₂ adduct, which can lower the valence band maximum of the 2,2,7,7‐tetrakis(N,N‐di‐p‐methoxyphenyl‐amine)9,9‐spirobifluorene (Spiro‐OMeTAD) for a more favorable energy alignment with the perovskite material. With the help of the localized surface plasmon resonance effect of Au@CdS, holes can easily overcome the barrier at the perovskite/Spiro‐OMeTAD interface (or GBs) through the bridge of the intermediate Au@CdS–PbI₂, avoiding the carrier accumulation, and suppress the carrier trap recombination at the Spiro‐OMeTAD/perovskite interface. Consequently, the Au@CdS‐based perovskite solar cell device achieves a high efficiency of over 21%, with excellent stability of ≈90% retention of initial power conversion efficiencies after 45 days storage in dry air.     

Ultra‐High Capacity Lithium‐Ion Batteries with Hierarchical CoO Nanowire Clusters as Binder Free Electrodes

Although transition metal oxide electrodes have large lithium storage capacity, they often suffer from low rate capability, poor cycling stability, and unclear additional capacity. In this paper, CoO nanowire clusters (NWCs) composed of ultra‐small nanoparticles (≈10 nm) directly grown on copper current collector are fabricated and evaluated as an anode of binder‐free lithium‐ion batteries, which exhibits an ultra‐high capacity and good rate capability. At a rate of 1 C (716 mA g^?1), a reversible capacity as high as 1516.2 mA h g^?1 is obtained, and even when the current density is increased to 5 C, a capacity of 1330.5 mA h g^?1 could still be maintained. Importantly, the origins of the additional capacity are investigated in detail, with the results suggesting that pseudocapacitive charge and the higher‐oxidation‐state products are jointly responsible for the large additional capacity. In addition, nanoreactors for the CoO nanowires are fabricated by coating the CoO nanowires with amorphous silica shells. This hierarchical core–shell CoO@SiO₂ NWC electrode achieves an improved cycling stability without degrading the high capacity and good rate capability compared to the uncoated CoO NWCs electrode.     

27%‐Efficiency Four‐Terminal Perovskite/Silicon Tandem Solar Cells by Sandwiched Gold Nanomesh

Multijunction/tandem solar cells have naturally attracted great attention because they are not subject to the Shockley–Queisser limit. Perovskite solar cells are ideal candidates for the top cell in multijunction/tandem devices due to the high power conversion efficiency (PCE) and relatively low voltage loss. Herein, sandwiched gold nanomesh between MoO₃ layers is designed as a transparent electrode. The large surface tension of MoO₃ effectively improves wettability for gold, resulting in Frank–van der Merwe growth to produce an ultrathin gold nanomesh layer, which guarantees not only excellent conductivity but also great optical transparency, which is particularly important for a multijunction/tandem solar cell. The top MoO₃ layer reduces the reflection at the gold layer to further increase light transmission. As a result, the semitransparent perovskite cell shows an 18.3% efficiency, the highest reported for this type of device. When the semitransparent perovskite device is mechanically stacked with a heterojunction silicon solar cell of 23.3% PCE, it yields a combined efficiency of 27.0%, higher than those of both the sub‐cells. This breakthrough in elevating the efficiency of semitransparent and multijunction/tandem devices can help to break the Shockley–Queisser limit.     

Room‐Temperature Nanosoldering of a Very Long Metal Nanowire Network by Conducting‐Polymer‐Assisted Joining for a Flexible Touch‐Panel Application

As an alternative to the brittle and expensive indium tin oxide (ITO) transparent conductor, a very simple, room‐temperature nanosoldering method of Ag nanowire percolation network is developed with conducting polymer to demonstrate highly flexible and even stretchable transparent conductors. The drying conducting polymer on Ag nanowire percolation network is used as a nanosoldering material inducing strong capillary‐force‐assisted stiction of the nanowires to other nanowires or to the substrate to enhance the electrical conductivity, mechanical stability, and adhesion to the substrate of the nanowire percolation network without the conventional high‐temperature annealing step. Highly bendable Ag nanowire/conducting polymer hybrid films with low sheet resistance and high transmittance are demonstrated on a plastic substrate. The fabricated flexible transparent electrode maintains its conductivity over 20 000 cyclic bends and 5 to 10% stretching. Finally, a large area (A4‐size) transparent conductor and a flexible touch panel on a non‐flat surface are fabricated to demonstrate the possibility of cost‐effective mass production as well as the applicability to the unconventional arbitrary soft surfaces. These results suggest that this is an important step toward producing intelligent and multifunctional soft electric devices as friendly human/electronics interface, and it may ultimately contribute to the applications in wearable computers.     

Bendable Solar Cells from Stable,Flexible, and Transparent Conducting Electrodes Fabricated Using a Nitrogen‐Doped Ultrathin Copper Film

Copper has attracted significant interests as an abundant and low‐cost alternative material for flexible transparent conducting electrodes (FTCEs). However, Cu‐based FTCEs still present unsolved technical issues, such as their inferior light transmittance and oxidation durability compared to conventional indium tin oxide (ITO) and silver metal electrodes. This study reports a novel technique for fabricating highly efficient FTCEs composed of a copper ultrathin film sandwiched between zinc oxides, with enhanced transparency and antioxidation performances. A completely continuous and smooth copper ultrathin film is fabricated by a simple room‐temperature reactive sputtering process involving controlled nitrogen doping (<1%) due to a dramatic improvement in the wettability of copper on zinc oxide surfaces. The electrode based on the nitrogen‐doped copper film exhibits an optimized average transmittance of 84% over a spectral range of 380 ?1000 nm and a sheet resistance lower than 20 Ω sq^?1, with no electrical degradation after exposure to strong oxidation conditions for 760 h. Remarkably, a flexible organic solar cell based on the present Cu‐based FTCE achieves a power conversion efficiency of 7.1%, clearly exceeding that (6.6%) of solar cells utilizing the conventional ITO film, and this excellent performance is maintained even in almost completely bent configurations.     

Layer‐by‐Layer Fabrication of Nanowire Sensitized Solar Cells: Geometry‐Independent Integration

Thin film solar cells that are low in cost but still reasonably efficient comprise an important strategy for reaching price‐performance ratios competitive with fossil fuel electrical generation. Sensitized solar cells – most commonly dye but also semiconductor nanocrystal sensitized – are a thin film device option benefitting from lost cost material components and processing. Nanocrystal sensitized solar cells are predicted to outpace their dye‐based counterparts, but suffer from limited availability of approaches for integrating the nano‐sensitizers within a mesoporous oxide anode, which effectively limits the choice of sensitizer to those that are synthesized in situ or those that are easily incorporated into the oxide framework. The latter methods favor small, symmetric nanocrystals, while highly asymmetric semiconductors (e.g., nanowires, tetrapods, carbon nanotubes) have to date found limited utility in sensitized solar‐cell devices, despite their promise as efficient solar energy converters. Here, a new strategy for solar cell fabrication is demonstrated that is independent of sensitizer geometry. Nanocrystal‐sensitized solar cells are fabricated from either CdSe semiconductor quantum dots or nanowires with facile control over nanocrystal loading. Without substantial optimization and using low processing temperatures, efficiencies approaching 2% are demonstrated. Furthermore, the significance of a ‘geometry‐independent’ fabrication strategy is shown by revealing that nanowires afford important advantages compared to quantum dots as sensitizers. For equivalent nanocrystal masses and otherwise identical devices, nanowire devices yield higher power conversion efficiencies, resulting from both enhanced light harvesting efficiencies for all overlapping wavelengths and internal quantum efficiencies that are more than double those obtained for quantum dot devices.