Magnetic anisotropy in (Ga,Mn)As on GaAs(1 1 3)As studied by magnetotransport and ferromagnetic resonance

The magnetic anisotropy of a 40-nm-thick (Ga,Mn)As film with 5% Mn grown on GaAs(1 1 3)A is studied by means of magnetotransport and ferromagnetic resonance (FMR) spectroscopy. In addition to the cubic and a weak uniaxial in-plane anisotropy, two uniaxial out-of-plane contributions along [1 1 3] and [0 0 1] are found. Using the anisotropy parameters determined from FMR, the longitudinal and transverse resistivities measured as a function of magnetic field orientation and strength are well modelled within the framework of a single ferromagnetic domain. In particular, the low-field data which are strongly affected by sudden jumps of the magnetization are well reproduced.     

Influence of substrate on the high-frequency permeability of thin iron films

The ferromagnetic resonance (FMR) spectra of thin metallic films obtained by magnetron deposition on polymeric and ceramic substrates are investigated in the strip line at frequencies of 0.13–12 GHz via frequency and external magnetic field sweeping. The influence of mechanical stresses on the FMR spectra of films deposited on an elastic (polyethylene rephthalate) substrate is discussed. The magnetostriction contribution to the anisotropy field of a film, as well as the influence of tensile stresses on the quasi-static permeability and FMR frequency, is estimated. It is demonstrated that the microwave properties of a thin metallic film are also specified by the properties of the substrate with such a film. A distinction in the magnetic properties of films with the same composition, which are deposited on different substrates, is explained in terms of the magnetostriction effect.     

声光调制光纤器件及其应用

综述了近年来光纤中声光耦合的研究及其一些应用。由PZT产生的弹性声波在光纤上传播,导致光纤周期性的微弯,引起光纤内模式耦合。其作用类似于长周期光栅,但又因为声波的频率、振幅随着施加的RF信号的频率和振幅的改变而改变,因而相对长周期光栅来讲有着灵活、可调的优点。根据声波对光纤共振波长的调谐特性,可以做出很多性能优异的光器件,如频移器,窄带和超宽带的可调滤波器,可调光衰减器,光开关等。     

Tuning a Binary Ferromagnet into a Multistate Synapse with Spin–Orbit‐Torque‐Induced Plasticity

Ferromagnets with binary states are limited for applications as artificial synapses for neuromorphic computing. Here, it is shown how synaptic plasticity of a perpendicular ferromagnetic layer (FM1) can be obtained when it is interlayer exchange‐coupled by another in‐plane ferromagnetic layer (FM2), where a magnetic field‐free current‐driven multistate magnetization switching of FM1 in the Pt/FM1/Ta/FM2 structure is induced by spin–orbit torque. Current pulses are used to set the perpendicular magnetization state, which acts as the synapse weight, and spintronic implementation of the excitatory/inhibitory postsynaptic potentials and spike timing‐dependent plasticity are demonstrated. This functionality is made possible by the action of the in‐plane interlayer exchange coupling field which leads to broadened, multistate magnetic reversal characteristics. Numerical simulations, combined with investigations of a reference sample with a single perpendicular magnetized Pt/FM1/Ta structure, reveal that the broadening is due to the in‐plane field component tuning the efficiency of the spin–orbit torque to drive domain walls across a landscape of varying pinning potentials. The conventionally binary FM1 inside the Pt/FM1/Ta/FM2 structure with an inherent in‐plane coupling field is therefore tuned into a multistate perpendicular ferromagnet and represents a synaptic emulator for neuromorphic computing, demonstrating a significant pathway toward a combination of spintronics and synaptic electronics.     

A Strain‐Mediated Magnetoelectric‐Spin‐Torque Hybrid Structure

Magnetization dynamics induced by spin–orbit torques in a heavy‐metal/ferromagnet can potentially be used to design low‐power spintronics and logic devices. Recent computations have suggested that a strain‐mediated spin–orbit torque (SOT) switching in magnetoelectric (ME) heterostructures is fast, energy‐efficient, and permits a deterministic 180° magnetization switching. However, its experimental realization has remained elusive. Here, the coexistence of the strain‐mediated ME coupling and the SOT in a CoFeB/Pt/ferroelectric hybrid structure is shown experimentally. The voltage‐induced strain only slightly modifies the efficiency of SOT generation, but it gives rise to an effective magnetic anisotropy and rotates the magnetic easy axis which eliminates the incubation delay in current‐induced magnetization switching. The phase field simulations show that the electric‐field‐induced effective magnetic anisotropy field can reduce the switching time approximately by a factor of three for SOT in‐plane magnetization switching. It is anticipated that such strain‐mediated ME‐SOT hybrid structures may enable field‐free, ultrafast magnetization switching.     

Ultraflexible and Malleable Fe/BaTiO3 Multiferroic Heterostructures for Functional Devices

The high demand for flexible spintronics based on multiferroic heterostructures makes growing high-quality flexible, functional oxides urgently, in which needs to be deposited on lattice-matched substrates. In this paper, ultraflexible and malleable iron (Fe)/BaTiO₃ (BTO) multiferroic heterostructures are demonstrated, showing a perfect crystallinity and hetero-epitaxial growth. In terms of performance, they indicate good multiferroic properties and excellent bending tunability, as well as obvious magnetoelectric (ME) coupling effect. During the phase transformation from the rhombohedral phase to the orthorhombic phase of BTO layers in the heating process, a large ME coupling coefficient of 120 Oe  ° C⁻¹ along the out-of-plane direction is obtained. This value keeps consistent in the phase-field simulation of magnetic domain evolution, in which the biaxial compressive strain induced-magnetoelastic anisotropy facilitates the magnetic easy axis of Fe layers to the [110] or [–1–10] direction. Besides, ultraflexible Fe/BTO heterostructures are found to have a 690 Oe ferromagnetic resonance (FMR) field shift along the out-of-plane direction under the flexible tuning (R  = 5 mm). This work should pave a way toward flexible spintronic and functional devices with fast speed, portability, and low energy consumption.     

Magnetization oscillations in a ferromagnet/nonmagnetic metal/ferromagnet nanostructure under the action of the spin-polarized current

Oscillations of magnetization of a ferromagnetic disk included in the ferromagnet/nonmagnetic metal/ferromagnet nanostructure under the action of the spin-polarized current are studied in the macrospin approximation. Conditions for switching and oscillations of magnetization are determined for four cases of the magnetic crystallographic anisotropy near the transition instability region depending on the ratio between disk dimensions and current density. It is shown that the region of disk magnetization instability corresponds to the minimum values of the current density that are necessary for excitation of the oscillations or switching of magnetization. Depending on the value and direction of the anisotropy and the relaxation parameter, the frequency of the observed oscillations varies within 0.1–30 GHz.     

Structure and soft magnetic properties of Fe-Co-Ni-based multicomponent thin films

Soft magnetic thin films with suitable uniaxial anisotropy and high saturation magnetization are required for high frequency applications, since the ferromagnetic resonance frequency (f_FMR) is proportional to the multiplication of the saturation magnetization and anisotropy magnetic field. In this study, multicomponents of Fe-Co-Ni-based soft magnetic thin films were deposited on the Si substrate by radio frequency (RF) magnetron sputtering with various Ar/N₂ ratios at room temperature. The composition, crystal structure, surface morphology, and magnetic domain were analyzed. Without nitrogen doping, the domain of the magnetic thin film was arranged randomly. The effect of N₂ content in the thin film on the magnetic properties was evaluated and further discussed. Magnetic properties, including saturation magnetization (M_s) and coercivity (H_c), were determined. The saturation magnetization of the undoped magnetic thin film was around 1.3 T. However, when the nitrogen was added, the magnitude of the anisotropy field could reach 30 Oe, while the saturation magnetization was around 1 T. It is expected that the derived magnetic thin film is a promising candidate for potential usage in high frequency inductors.     

E‐Field Control of Exchange Bias and Deterministic Magnetization Switching in AFM/FM/FE Multiferroic Heterostructures

The coexistence of electrical polarization and magnetization in multiferroic materials provides great opportunities for novel information storage systems. In particular, magnetoelectric (ME) effect can be realized in multi­ferroic composites consisting of both ferromagnetic and ferroelectric phases through a strain mediated interaction, which offers the possibility of electric field (E‐field) manipulation of magnetic properties or vice versa, and enables novel multiferroic devices such as magnetoelectric random access memories (MERAMs). These MERAMs combine the advantages of FeRAMs (ferroelectric random access memories) and MRAMs (magnetic random access memories), which are non‐volatile magnetic bits switchable by electric field (E‐field). However, it has been challenging to realize 180° deterministic switching of magnetization by E‐field, on which most magnetic memories are based. Here we show E‐field modulating exchange bias and for the first time realization of near 180° dynamic magnetization switching at room temperature in novel AFM (antiferromagnetic)/FM (ferromagnetic)/FE (ferroelectric) multiferroic heterostructures of FeMn/Ni₈₀Fe₂₀/FeGaB/PZN‐PT (lead zinc niobate–lead titanate). Through competition between the E‐field induced uniaxial anisotropy and unidirectional anisotropy, large E‐field‐induced exchange bias field‐shift up to $ {{{\Delta H_{ex}}}\over{{H_{ex}}}} = 218\%$ and near 180° deterministic magnetization switching were demonstrated in the exchange‐coupled multiferroic system of FeMn/Ni₈₀Fe₂₀/FeGaB/PZN‐PT. This E‐field tunable exchange bias and near 180° deterministic magnetization switching at room temperature in AFM/FM/FE multiferroic heterostructures paves a new way for MERAMs and other memory technologies.     

Giant Electric Field Tuning of Magnetic Properties in Multiferroic Ferrite/Ferroelectric Heterostructures

Multiferroic heterostructures of Fe₃O₄/PZT (lead zirconium titanate), Fe₃O₄/PMN‐PT (lead magnesium niobate‐lead titanate) and Fe₃O₄/PZN‐PT (lead zinc niobate‐lead titanate) are prepared by spin‐spray depositing Fe₃O₄ ferrite film on ferroelectric PZT, PMN‐PT and PZN‐PT substrates at a low temperature of 90 °C. Strong magnetoelectric coupling (ME) and giant microwave tunability are demonstrated by a electrostatic field induced magnetic anisotropic field change in these heterostructures. A high electrostatically tunable ferromagnetic resonance (FMR) field shift up to 600 Oe, corresponding to a large microwave ME coefficient of 67 Oe cm kV^?1, is observed in Fe₃O₄/PMN‐PT heterostructures. A record‐high electrostatically tunable FMR field range of 860 Oe with a linewidth of 330–380 Oe is demonstrated in Fe₃O₄/PZN‐PT heterostructure, corresponding to a ME coefficient of 108 Oe cm kV^?1. Static ME interaction is also investigated and a maximum electric field induced squareness ratio change of 40% is observed in Fe₃O₄/PZN‐PT. In addition, a new concept that the external magnetic orientation and the electric field cooperate to determine microwave magnetic tunability is brought forth to significantly enhance the microwave tunable range up to 1000 Oe. These low temperature synthesized multiferroic heterostructures exhibiting giant electrostatically induced tunable magnetic resonance field at microwave frequencies provide great opportunities for electrostatically tunable microwave multiferroic devices.     

High Power, Magnetic Field Controlled Microwave Gas Discharge Switches

A new type of gas discharge switch is described, It is electronically controllable, broadband, and capable of rapidly switching high power pulsed microwaves from either of two waveguide input ports to a single waveguide output port, or from one waveguide input port to either of two waveguide output ports. The electronic control is achieved by turning on or off a magnetic field set for cyclotron resonance. An approximate analysis is given of the operation of the active element of the switch and the results are compared with experiment. An analysis of the effects of frequency scaling indicates that, with the exception of the magnetic flux density which increases with increasing frequency, the switch parameters either improve or remain unchanged in going to higher frequencies. Two different switch configurations are investigated, one a Y-junction switch for operation at S band and the other a balanced top-wall hybrid coupler switch for operation at K/sub u/ band. Their electrical characteristics are described.     

Magnetostatic wave propagation in YIG double layers

Calculations are presented for the magnetostatic surface wave propagation characteristics in single-crystal yttrium-iron-garnet (YIG) double layers with arbitrary direction of magnetization. The induced uniaxial magnetic anisotropy field is assumed to be different in the two layers; hence, the magnetization in one layer is aligned at an angle with respect to the magnetization direction in the other layer. The magnetostatic field interactions between layers depend on the angle between the two magnetization directions and on the separation between the two YIG layers. The wave propagation directions and time delays in each layer can be strongly affected by the use of an applied magnetic field and the magnetostatic coupling between the two layers, as well as by the uniaxial anisotropy energy in each layer     

基于自由空间耦合技术光开关的实验研究

本文提出了一种基于自由空间耦合技术的新型光开关器件.该光开关是利用聚合物薄膜的电光效应,通过控制导模的耦合效率来进一步控制反射光强来实现光的通断,理论与实验表明:该器件具有响应速度快、消光比大、损耗小、稳定性高,与传统棱镜耦合方式的光开关器件相比其具有结构和制备工艺更加简单和成本低廉等诸多优点.     

Mechanical Strain‐Tunable Microwave Magnetism in Flexible CuFe2O4 Epitaxial Thin Film for Wearable Sensors

Purely mechanical strain‐tunable microwave magnetism device with lightweight, flexible, and wearable is crucial for passive sensing systems and spintronic devices (noncontact), such as flexible microwave detectors, flexible microwave signal processing devices, and wearable mechanics‐magnetic sensors. Here, a flexible microwave magnetic CuFe₂O₄ (CuFO) epitaxial thin film with tunable ferromagnetic resonance (FMR) spectra is demonstrated by purely mechanical strains, including tensile and compressive strains, on flexible fluorophlogopite (Mica) substrates. Tensile and compressive strains show remarkable tuning effects of up‐regulation and down‐regulation on in‐plane FMR resonance field (H_r), which can be used for flexible tunable resonators and filters. The out‐of‐plane FMR spectra can also be tuned by mechanical bending, including H_r and absorption peak. The change of out‐of‐plane FMR spectra has great potential for flexible mechanics‐magnetic deformation sensors. Furthermore, a superior microwave magnetic stability and mechanical antifatigue character are obtained in the CuFO/Mica thin films. These flexible epitaxial CuFO thin films with tunable microwave magnetism and excellent mechanical durability are promising for the applications in flexible spintronics, microwave detectors, and oscillators.     

Magnetically Responsive Optical Modulation: from Anisotropic Nanostructures to Emerging Applications

Magnetically responsive optical modulation has emerged as a promising application in various fields such as smart windows, anti-counterfeiting, and colorimetric sensors, due to its unique advantages in remote and nondestructive control, as well as precise and high-contrast response. Compared to isotropic counterparts, anisotropic magnetic nanostructures (AMNs) take advantage of the interplay among magnetic dipoles, magnetocrystalline anisotropy, shape anisotropy, and crystal facets to control diverse dimensions of light propagation. By manipulating frequency, amplitude, polarization, and plasmonic resonance, AMNs can provide a  variety of functional applications. A comprehensive overview of recent developments in optical modulation based on AMNs with a focus on their emerging applications and design strategies is presented. It starts with a brief introduction of typical AMN building blocks, highlighting various optical modulation modes, including tunable transmission, diffraction, polarization, and plasmonic resonance. The primary focus is to discuss design strategies for various applications, i.e., smart windows, anti-counterfeiting labels, colorimetric sensors, and multifunctional-driven devices. It concludes with the challenges and perspectives for magneto-optical modulation based on anisotropic structures. Overall, this review provides in-depth insight into building blocks, magnetic modulation strategies, and optical property modulation of AMNs, thereby accelerating practical applications of these structures in functional devices.     

Long‐Range Nonvolatile Electric Field Effect in Epitaxial Fe/Pb(Mg1/3Nb2/3)0.7Ti0.3O3 Heterostructures

One of the ideal candidates of using electric field to manipulate magnetism is the recently developed multiferroics with emergent coupling of magnetism and electricity, particularly in synthesizing artificial nanoscale ferroelectric and ferromagnetic materials. Here, a long‐range nonvolatile electric field effect is investigated in Fe/Pb(Mg_1/3Nb_2/3)_0.7Ti_0.3O₃ heterostructure using the dependence of the magnon‐driven magnetoelectric coupling on the epitaxial Fe thin film (4–30 nm) thickness at room temperature using measurements based on the ferromagnetic resonance. The magnon‐driven magnetoelectric coupling tuning of the ferromagnetic resonance field shows a linear response to the electric field, with a resonance field shift that occurs under both positive and negative remanent polarizations, and demonstrates nonvolatile behavior. Moreover, the spin diffusion length of the epitaxial Fe thin film of ≈9 nm is obtained from the results that the change of the cubic magnetocrystalline anisotropy field under different electric fields varies with Fe thickness. These results are promising for the design of future multiferroic devices.     

Full-wave analysis of circular microstrip resonators inmultilayered media containing uniaxial anisotropic dielectrics,magnetized ferrites, and chiral materials

In this paper, Galerkin's method in the Hankel transform domain is applied to the determination of the resonant frequencies, quality factors, and radiation patterns of circular microstrip patch resonators. The metallic patches are assumed to be embedded in a multilayered substrate, which may contain uniaxial anisotropic dielectrics, magnetized ferrites, and/or chiral materials. The numerical results obtained show that important errors can be made in the computation of the resonant frequencies of the resonators when substrate dielectric anisotropy, substrate magnetic anisotropy and/or substrate chirality are ignored. Also, it is shown that the resonant frequencies of circular microstrip resonators on magnetized ferrites can be tuned over a wide frequency range by varying the applied bias magnetic field. Finally, the computed results show that the resonance and radiation properties of a circular microstrip patch on a chiral material is very similar to those of a circular patch of the same size printed on a nonchiral material of lower permittivity     

Optical unidirectional devices by complex spatial single sideband perturbation

Important functionality of photonics circuits is invoking interactions between few optical modes. Intermodal power exchange can be realized by introducing a spatial perturbation of the refractive index. The power transfer is symmetric from mode n to m and vice versa, as well as time reversible-both can impede definite performance of a variety of optical devices. By modifying the coupling concept-i.e., using a matched periodic modulation of both the index of refraction and loss (gain) of the medium, we implement a complex spatially single sideband perturbation (SSP), which breaks the symmetry and allows a unidirectional energy flow from mode m to mode n, while blocking the inverse flow. We investigated various deviations from ideal conditions including detuned schemes (gratings period not matched with the difference between propagation constants), unequal real and imaginary coupling coefficients, self-coupling coefficients, saturation effects and spatial separation of the real and imaginary perturbations. Finally the SSP is exemplified in the design of a novel broad-band "add" component for optical add/drop multiplexing system.     

横向场激励的BT-切石英传感器研究

研究了BT-切石英横向场激励(LFE)的耦合特性、声波相速度及其传感器在液体中的敏感性能.理论计算表明,当横向场方向与晶轴x方向垂直时,b模式的LFE耦合系数达到最大值6.68%,a和c模式的LFE耦合系数为0,此时激发的声波相速度也达到最大值5 079 m/s.实验发现,器件在液体中,具有较高的机械及电特性灵敏度.结果表明,在b-模式LFE耦合系数为0的方向上,器件实际上工作在伪横向场激励模式.