Characterization and Field‐Emission Properties of Needle‐like Zinc Oxide Nanowires Grown Vertically on Conductive Zinc Oxide Films

Needle‐like ZnO nanowires with high density are grown uniformly and vertically over an entire Ga‐doped conductive ZnO film at 550 °C. The nanowires are grown preferentially in the c‐axis direction. The X‐ray diffraction (XRD) θ‐scan curve shows a full width at half maximum (FWHM) value of 2°. This indicates that the c‐axes of the nanorods are along the normal direction of the substrate surface. The investigation using high‐resolution transmission electron microscopy (HRTEM) confirmed that each nanowire is a single crystal. A room‐temperature photoluminescence (PL) spectrum of the wires consists of a strong and sharp UV emission band at 380 nm and a weak and broad green–yellow band. It reveals a low concentration of oxygen vacancies in the ZnO nanowires and their high optical quality. Field electron emission from the wires was also investigated. The turn‐on field for the ZnO nanowires was found to be about 18 V μm^–1 at a current density of 0.01 μA cm^–2. The emission current density from the ZnO nanowires reached 0.1 mA cm^–2 at a bias field of 24 V μm^–1.     

Metastable Copper‐Phthalocyanine Single‐Crystal Nanowires and Their Use in Fabricating High‐Performance Field‐Effect Transistors

This paper describes a simple, vapor‐phase route for the synthesis of metastable α‐phase copper‐phthalocyanine (CuPc) single‐crystal nanowires through control of the growth temperature. The influence of the growth temperature on the crystal structures, morphology, and size of the CuPc nanostructures is explored using X‐ray diffraction (XRD), optical absorption, and transmission electron microscopy (TEM). α‐CuPc nanowires are successfully incorporated as active semiconductors in field‐effect transistors (FETs). Single nanowire devices exhibit carrier mobilities and current on/off ratios as high as 0.4 cm² V^?1 s^?1 and >10⁴, respectively.     

Enhancement of Thermopower of TAGS‐85 High‐Performance Thermoelectric Material by Doping with the Rare Earth Dy

Enhancement of thermopower is achieved by doping the narrow‐band semiconductor Ag_6.52Sb_6.52Ge_36.96Te₅₀ (acronym TAGS‐85), one of the best p‐type thermoelectric materials, with 1 or 2% of the rare earth dysprosium (Dy). Evidence for the incorporation of Dy into the lattice is provided by X‐ray diffraction and increased orientation‐dependent local fields detected by ¹²⁵Te NMR spectroscopy. Since Dy has a stable electronic configuration, the enhancement cannot be attributed to 4f‐electron states formed near the Fermi level. It is likely that the enhancement is due to a small reduction in the carrier concentration, detected by ¹²⁵Te NMR spectroscopy, but mostly due to energy filtering of the carriers by potential barriers formed in the lattice by Dy, which has large both atomic size and localized magnetic moment. The interplay between the thermopower, the electrical resistivity, and the thermal conductivity of TAGS‐85 doped with Dy results in an enhancement of the power factor (PF) and the thermoelectric figure of merit (ZT) at 730 K, from PF = 28 μW cm^?1 K^?2 and ZT ≤ 1.3 in TAGS‐85 to PF = 35 μW cm^?1 K^?2 and ZT ≥ 1.5 in TAGS‐85 doped with 1 or 2% Dy for Ge. This makes TAGS‐85 doped with Dy a promising material for thermoelectric power generation.     

Wavelength‐Emission Tuning of ZnO Nanowire‐Based Light‐Emitting Diodes by Cu Doping: Experimental and Computational Insights

The band‐gap engineering of doped ZnO nanowires is of the utmost importance for tunable light‐emitting‐diode (LED) applications. A combined experimental and density‐functional theory (DFT) study of ZnO doping by copper (Zn²⁺ substitution by Cu²⁺) is presented. ZnO:Cu nanowires are epitaxially grown on magnesium‐doped p‐GaN by electrochemical deposition. The heterojunction is integrated into a LED structure. Efficient charge injection and radiative recombination in the Cu‐doped ZnO nanowires are demonstrated. In the devices, the nanowires act as the light emitters. At room temperature, Cu‐doped ZnO LEDs exhibit low‐threshold emission voltage and electroluminescence emission shifted from the ultraviolet to violet–blue spectral region compared to pure ZnO LEDs. The emission wavelength can be tuned by changing the copper content in the ZnO nanoemitters. The shift is explained by DFT calculations with the appearance of copper d states in the ZnO band‐gap and subsequent gap reduction upon doping. The presented data demonstrate the possibility to tune the band‐gap of ZnO nanowire emitters by copper doping for nano‐LEDs.     

Hydrogen‐Assisted Growth of Ultrathin Te Flakes with Giant Gate‐Dependent Photoresponse

Tellurium (Te), as an elementary material, has attracted intense attention due to its potentially novel properties. However, it is still a great challenge to realize high‐quality 2D Te due to its helical chain structure. Here, ultrathin Te flakes (5 nm) are synthesized via hydrogen‐assisted chemical vapor deposition method. The density functional theory calculations and experiments confirm the growth mechanism, which can be ascribed to the formation of volatile intermediates increasing vapor pressure of the source and promoting the reaction. Impressively, the Te flake‐based transistor shows high on/off ratio ≈10⁴, ultralow off‐state current ≈8 × 10^?13 A, as well as a negligible hysteresis due to reducing thermally activated defects at 80 K. Moreover, Te‐flake‐based phototransistor demonstrates giant gate‐dependent photoresponse: when gate voltage varies from ?70 to 70 V, I_on/I_off is increased by ≈40‐fold. The hydrogen‐assisted strategy may provide a new approach for synthesizing other high quality 2D elementary materials.     

High Thermoelectric Performance in Supersaturated Solid Solutions and Nanostructured n‐Type PbTe–GeTe

Sb‐doped and GeTe‐alloyed n‐type thermoelectric materials that show an excellent figure of merit ZT in the intermediate temperature range (400–800 K) are reported. The synergistic effect of favorable changes to the band structure resulting in high Seebeck coefficient and enhanced phonon scattering by point defects and nanoscale precipitates resulting in reduction of thermal conductivity are demonstrated. The samples can be tuned as single‐phase solid solution (SS) or two‐phase system with nanoscale precipitates (Nano) based on the annealing processes. The GeTe alloying results in band structure modification by widening the bandgap and increasing the density‐of‐states effective mass of PbTe, resulting in significantly enhanced Seebeck coefficients. The nanoscale precipitates can improve the power factor in the low temperature range and further reduce the lattice thermal conductivity (κ_lat). Specifically, the Seebeck coefficient of Pb_0.988Sb_0.012Te–13%GeTe–Nano approaches ?280 µV K^?1 at 673 K with a low κ_lat of 0.56 W m^?1 K^?1 at 573 K. Consequently, a peak ZT value of 1.38 is achieved at 623 K. Moreover, a high average ZT_avg value of ≈1.04 is obtained in the temperature range from 300 to 773 K for n‐type Pb_0.988Sb_0.012Te–13%GeTe–Nano.     

Growth condition of iodine-doped n+-CdTe layers in metal-organic vapor phase epitaxy

Iodine doping of CdTe layers grown on (100) GaAs by metal-organic vapor phase epitaxy (MOVPE) was studied using diethyltelluride (DETe) and diisopropyltelluride (DiPTe) as tellurium precursors and ethyliodine (EI) as a dopant. Electron densities of doped layers increased gradually with decreasing the growth temperature from 425°C to 325°C. Doped layers grown with DETe had higher electron densities than those grown with DiPTe. When the hot-wall temperature was increased from 200°C to 250°C at the growth temperature of 325°C, doped layers grown with DETe showed an increase of the electron density from 3.7×10¹⁶ cm⁻³ to 2.6×10¹⁸ cm⁻³. On the other hand, such an increase of the electron density was not observed for layers grown with DiPTe. The mechanisms for different doping properties for DETe and DiPTe were studied on the basis of the growth characteristics for these precursors. Higher thermal stability of DETe than that of DiPTe was considered to cause the difference of doping properties. With increasing the hot-wall temperature from 200°C to 250°C, the effective ratio of Cd to Te species on the growth surface became larger for layers grown with DETe than those grown with DiPTe. This was considered to decrease the compensation of doped iodine and to increase the electron density of layers grown with DETe. The effective ratio of Cd to Te species on the growth surface also increased with decreasing growth temperature. This was considered to increase the electron density with decreasing growth temperature.     

Long K‐Doped Titania and Titanate Nanowires on Ti Foil and FTO/Quartz Substrates for Solar‐Cell Applications

Potassium‐doped titania and titanate nanowires are fabricated by moisture‐assisted direct oxidation of titanium. The influence of the fabrication conditions on nanowire structure and morphology is investigated. It is shown that the presence of potassium is essential for nanowire formation, while the nanowire structure and morphology are strongly dependent on the fabrication temperature. The longest nanowires (ca. 10 μm) are obtained at 650 °C. At this substrate temperature, nanowires could be produced over a large substrate area both by oxidation of the Ti foil as well as by depositing a Ti film on the substrate (quartz or fluorine‐doped tin oxide (FTO)/quartz). Photovoltaic cells based on these nanowires are fabricated. The cell performance is dependent on the nanowire fabrication temperature and the substrate used, as well as on the annealing environment. Short‐circuit current densities of I_sc = 3.05 mA cm^–2 and I_sc = 4.97 mA cm^–2 could be obtained for Ti foil and FTO/quartz substrates, respectively, while the corresponding power‐conversion efficiencies are η = 0.93 % and η = 1.88 % (under AM 1.5 illumination, 100 mW cm^–2; AM: air mass).     

Elastic Carbon Nanotube Aerogel Meets Tellurium Nanowires: A Binder‐ and Collector‐Free Electrode for Li‐Te Batteries

Rechargeable Li batteries based on group VIA element cathodes, such as tellurium, are emerging due to their capability to provide equivalent theoretical volumetric capacity density to O and S, as well as an improved activity to react with Li. Herein, bifunctional and elastic carbon nanotube (CNT) aerogel is fabricated to combine with Te nanowires, yielding two types of binder/collector‐free Te cathodes to assemble Li‐Te batteries. The CNTs with high electronic conductivity and hollow porous structure enable stable electric contact and fast transportation of Li⁺, while trapping Te and Li₂Te in its network, triggering fast and stable Li‐Te electrochemistry. Both cathodes are also provided with fine compressibility, helping to buffer their volume changes during lithiation/delithiation and improving electrode integrity. Both cathodes deliver high specific capacity, fine cycling stability, and favorable high‐rate capability, proving their competence in building high‐energy rechargeable Li‐ion batteries.     

The Mechanism of Charge Generation in Charge‐Generation Units Composed of p‐Doped Hole‐Transporting Layer/HATCN/n‐Doped Electron‐Transporting Layers

The rate‐limiting step of charge generation in charge‐generation units (CGUs) composed of a p‐doped hole‐transporting layer (p‐HTL), 1,4,5,8,9,11‐hexaazatriphenylene hexacarbonitrile (HATCN) and n‐doped electron‐transporting layer (n‐ETL), where 1,1‐bis‐(4‐bis(4‐methyl‐phenyl)‐amino‐phenyl)‐cyclohexane (TAPC) was used as the HTL is reported. Energy level alignment determined by the capacitance–voltage (C–V) measurements and the current density–voltage characteristics of the structure clearly show that the electron injection at the HATCN/n‐ETL junction limits the charge generation in the CGUs rather than charge generation itself at the p‐HTL/HATCN junction. Consequently, the CGUs with 30 mol% Rb₂CO₃‐doped 4,7‐diphenyl‐1,10‐phenanthroline (BPhen) formed with the HATCN layer generates charges very efficiently and the excess voltage required to generate the current density of ±10 mA cm^?2 is around 0.17 V, which is extremely small compared with the literature values reported to date.     

Synthesis and Optical Properties of Europium‐Doped ZnS: Long‐Lasting Phosphorescence from Aligned Nanowires

Quasi‐aligned Eu²⁺‐doped wurtzite ZnS nanowires on Au‐coated Si wafers have been successfully synthesized by a vapor deposition method under a weakly reducing atmosphere. Compared with the undoped counterpart, incorporation of the dopant gives a modulated composition and crystal structure, which leads to a preferred growth of the nanowires along the [01 0] direction and a high density of defects in the nanowire hosts. The ion doping causes intense fluorescence and persistent phosphorescence in ZnS nanowires. The dopant Eu²⁺ ions form an isoelectronic acceptor level and yield a high density of bound excitons, which contribute to the appearance of the radiative recombination emission of the bound excitons and resonant Raman scattering at higher pumping intensity. Co‐dopant Cl^– ions can serve not only as donors, producing a donor–acceptor pair transition with the Eu²⁺ acceptor level, but can also form trap levels together with other defects, capture the photoionization electrons of Eu²⁺, and yield long‐lasting (about 4 min), green phosphorescence. With decreasing synthesis time, the existence of more surface states in the nanowires forms a higher density of trap centers and changes the crystal‐field strength around Eu²⁺. As a result, not only have an enhanced Eu²⁺ 4f⁶5d¹–4f⁷ intra‐ion transition and a prolonged afterglow time been more effectively observed (by decreasing the nanowires' diameters), but also the Eu²⁺ related emissions are shifted to shorter wavelengths.     

Selective Patterned Growth of Single‐Crystal Ag–TCNQ Nanowires for Devices by Vapor–Solid Chemical Reaction

We report the deterministic growth of individual single‐crystal organic semiconductor nanowires of silver–tetracyanoquinodimethane (Ag–TCNQ) with high yield (>90%) by a vapor–solid chemical reaction process. Ag–metal films or patterned dots deposited onto substrates serve as chemical reaction centers and are completely consumed during the growth of the individual or multiple nanowires. Selective‐area electron diffraction (SAED) revealed that the Ag–TCNQ nanowires grow preferentially along the strong π–π stacking direction of Ag–TCNQ molecules. The vapor–solid chemical reaction process described here permits the growth of organic nanowires at lower temperatures than chemical vapor deposition (CVD) of inorganic nanowires. The single‐crystal Ag–TCNQ nanowires are shown to act as memory switches with high on/off ratios, making them potentially useful in optical storage, ultrahigh‐density nanoscale memory, and logic devices.     

Self‐Assembled Nanowires of Organic n‐Type Semiconductor for Nonvolatile Transistor Memory Devices

Organic nonvolatile transistor‐type memory (ONVM) devices are developed using self‐assembled nanowires of n‐type semiconductor, N,N′‐bis(2‐phenylethyl)‐perylene‐3,4:9,10‐tetracarboxylic diimide (BPE‐PTCDI). The effects of nanowire dimension and silane surface treatment on the memory characteristics are explored. The diameter of the nanowires is reduced by increasing the non‐solvent methanol composition, which led to the enhanced crystallinity and high field‐effect mobility. The BPE‐PTCDI nanowires with small diameters induce high electrical fields and result in a large memory window (the shifting of the threshold voltage, ΔV_th). The ΔV_th value of BPE‐PTCDI nanowire based ONVM device on the bare substrate can reach 51 V, which is significantly larger than that of thin film. The memory window is further enhanced to 78 V with the on/off ratio of 2.1 × 10⁴ and the long retention time (10⁴ s), using a hydrophobic surface (such as trichloro(phenyl)silane‐treated surface). The above results demonstrate that the n‐type semiconducting nanowires have potential applications in high performance non‐volatile transistor memory devices.     

Cobalt‐Doping in Molybdenum‐Carbide Nanowires Toward Efficient Electrocatalytic Hydrogen Evolution

Efficient hydrogen evolution reaction (HER) over noble‐metal‐free electrocatalysts provides one of the most promising pathways to face the energy crisis. Herein, facile cobalt‐doping based on Co‐modified MoO_x–amine precursors is developed to optimize the electrochemical HER over Mo₂C nanowires. The effective Co‐doping into Mo₂C crystal structure increases the electron density around Fermi level, resulting in the reduced strength of Mo–H for facilitated HER kinetics. As expected, the Co‐Mo₂C nanowires with an optimal Co/Mo ratio of 0.020 display a low overpotential (η₁₀ = 140 and 118 mV for reaching a current density of –10 mA cm^?2; η₁₀₀ = 200 and 195 mV for reaching a current density of –100 mA cm^?2), a small Tafel slope (39 and 44 mV dec^?1), and a low onset overpotential (40 and 25 mV) in 0.5 m H₂SO₄ and 1.0 m KOH, respectively. This work highlights a feasible strategy to explore efficient electrocatalysts via engineering on composition and nanostructure.     

Hybridization of Bimetallic Molybdenum‐Tungsten Carbide with Nitrogen‐Doped Carbon: A Rational Design of Super Active Porous Composite Nanowires with Tailored Electronic Structure for Boosting Hydrogen Evolution Catalysis

An ecofriendly and robust strategy is developed to construct a self‐supported monolithic electrode composed of N‐doped carbon hybridized with bimetallic molybdenum‐tungsten carbide (Mo_xW_2?xC) to form composite nanowires for hydrogen evolution reaction (HER). The hybridization of Mo_xW_2?xC with N‐doped carbon enables effective regulation of the electrocatalytic performance of the composite nanowires, endowing abundant accessible active sites derived from N‐doping and Mo_xW_2?xC incorporation, outstanding conductivity resulting from the N‐doped carbon matrix, and appropriate positioning of the d‐band center with a thermodynamically favorable hydrogen adsorption free energy (ΔG_H*) for efficient hydrogen evolution catalysis, which forms a binder‐free 3D self‐supported monolithic electrode with accessible nanopores, desirable chemical compositions and stable composite structure. By modulating the Mo/W ratio, the optimal Mo_1.33W_0.67C @ NC nanowires on carbon cloth achieve a low overpotential (at a geometric current density of 10 mA cm^?2) of 115 and 108 mV and a small Tafel slope of 58.5 and 55.4 mV dec^?1 in acidic and alkaline environments, respectively, which can maintain 40 h of stable performance, outperforming most of the reported metal‐carbide‐based HER electrocatalysts.     

One‐Step Solvent‐Free Synthesis and Characterization of Zn1−xMnxSe@C Nanorods and Nanowires

The carbon‐encapsulated, Mn‐doped ZnSe (Zn_1−xMn_xSe@C) nanowires, nanorods, and nanoparticles are synthesized by the solvent‐free, one‐step RAPET (reactions under autogenic pressure at elevated temperature) approach. The aspect ratio of the nanowires/nanorods is altered according to the Mn/Zn atomic ratio, with the maximum being observed for Mn/Zn = 1:20. A 10–20 nm amorphous carbon shell is evidenced from electron microscopy analysis. The replacement of Zn by Mn in the Zn_1−xMn_xSe lattice is confirmed by the hyperfine splitting values in the electron paramagnetic resonance (EPR) experiments. Raman experiments reveal that the Zn_1−xMn_xSe core is highly crystalline, while the shell consists of disordered graphitic carbon. Variable‐temperature cathodoluminescence measurements are performed for all samples and show distinct ZnSe near‐band‐edge and Mn‐related emissions. An intense and broad Mn‐related emission at the largest Mn alloy composition of 19.9% is further consistent with an efficient incorporation of Mn within the host ZnSe lattice. The formation of the core/shell nanowires and nanorods in the absence of any template or structure‐directing agent is controlled kinetically by the Zn_1−xMn_xSe nucleus formation and subsequent carbon encapsulation. Mn replaces Zn mainly in the (111) plane and catalyzes the nanowire growth in the [111] direction.     

Highly Efficient p‐i‐n and Tandem Organic Light‐Emitting Devices Using an Air‐Stable and Low‐Temperature‐Evaporable Metal Azide as an n‐Dopant

Cesium azide (CsN₃) is employed as a novel n‐dopant because of its air stability and low deposition temperature. CsN₃ is easily co‐deposited with the electron transporting materials in an organic molecular beam deposition chamber so that it works well as an n‐dopant in the electron transport layer because its evaporation temperature is similar to that of common organic materials. The driving voltage of the p‐i‐n device with the CsN₃‐doped n‐type layer and a MoO₃‐doped p‐type layer is greatly reduced, and this device exhibits a very high power efficiency (57 lm W^?1). Additionally, an n‐doping mechanism study reveals that CsN₃ was decomposed into Cs and N₂ during the evaporation. The charge injection mechanism was investigated using transient electroluminescence and capacitance–voltage measurements. A very highly efficient tandem organic light‐emitting diodes (OLED; 84 cd A^?1) is also created using an n–p junction that is composed of the CsN₃‐doped n‐type organic layer/MoO₃ p‐type inorganic layer as the interconnecting unit. This work demonstrates that an air‐stable and low‐temperature‐evaporable inorganic n‐dopant can very effectively enhance the device performance in p‐i‐n and tandem OLEDs, as well as simplify the material handling for the vacuum deposition process.     

1D Tellurium Nanostructures: Photothermally Assisted Morphology‐Controlled Synthesis and Applications in Preparing Functional Nanoscale Materials

A facile visible‐light‐assisted solution‐phase approach has been successfully developed to synthesize trigonal Te 1D nanostructures. By varying the relative amount of H₂TeO₃ and water‐soluble polymers, wirelike, beltlike, tubular Te, and Te nanoparticle‐joined 1D aggregates, as well as a novel thorny 1D assembly of Te nanothreads can be synthesized on a large scale. The diameter of the Te nanowires can be modulated by controlling the nucleation and growth process through modulation of the pH value of the reaction mixture. It is believed that the light irradiation and thermal effect play a significant role in this photothermally assisted technique. We have shown that the Te nanowires can be used as a template to prepare Pt–Te nanochains, where the composition of Pt in the Pt–Te 1D products can be modulated by adjusting the ratio of the Te nanowires and Pt salts. Preliminary optical investigations reveal that blue–violet emission of Te nanowires can be enhanced by the formation of defects or dislocations in the Te region through the galvanic replacement reaction between Te nanowires and H₂PtCl₆. In addition, we demonstrate that Te 1D nanostructures can be utilized to prepare Te at carbon‐rich nanocables and carbonaceous nanotubes. Te–Pt at carbon‐rich nanocables can also be fabricated using Te–Pt nanochains as the template. These Pt–Te nanochains and carbonaceous nanostructures are expected to find wide applications in electrochemistry, catalysis, fuel cells, sensors, and other fields. Furthermore, the successful preparation of Te 1D nanostructures with abundant shapes, Pt–Te nanochains, and their carbonaceous composite nanomaterials will offer great opportunities to explore the dependence of novel properties of nanomaterials on their morphology and composition, regulate the photoconductivity of semiconductors, and also be essential for the manufacture of potential optoelectronic devices.     

Solution‐Processed,Alkali Metal‐Salt‐Doped,Electron‐Transport Layers for High‐Performance Phosphorescent Organic Light‐Emitting Diodes

High‐performance, blue, phosphorescent organic light‐emitting diodes (PhOLEDs) are achieved by orthogonal solution‐processing of small‐molecule electron‐transport material doped with an alkali metal salt, including cesium carbonate (Cs₂CO₃) or lithium carbonate (Li₂CO₃). Blue PhOLEDs with solution‐processed 4,7‐diphenyl‐1,10‐phenanthroline (BPhen) electron‐transport layer (ETL) doped with Cs₂CO₃ show a luminous efficiency (LE) of 35.1 cd A^?1 with an external quantum efficiency (EQE) of 17.9%, which are two‐fold higher efficiency than a BPhen ETL without a dopant. These solution‐processed blue PhOLEDs are much superior compared to devices with vacuum‐deposited BPhen ETL/alkali metal salt cathode interfacial layer. Blue PhOLEDs with solution‐processed 1,3,5‐tris(m‐pyrid‐3‐yl‐phenyl)benzene (TmPyPB) ETL doped with Cs₂CO₃ have a luminous efficiency of 37.7 cd A^?1 with an EQE of 19.0%, which is the best performance observed to date in all‐solution‐processed blue PhOLEDs. The results show that a small‐molecule ETL doped with alkali metal salt can be realized by solution‐processing to enhance overall device performance. The solution‐processed metal salt‐doped ETLs exhibit a unique rough surface morphology that facilitates enhanced charge‐injection and transport in the devices. These results demonstrate that orthogonal solution‐processing of metal salt‐doped electron‐transport materials is a promising strategy for applications in various solution‐processed multilayered organic electronic devices.     

Enhanced lateral current transport via the front N+ diffused layer of n‐type high‐efficiency back‐junction back‐contact silicon solar cells

N‐type back‐contact back‐junction solar cells were processed with the use of industrially relevant structuring technologies such as screen‐printing and laser processing. Application of the low‐cost structuring technologies in the processing of the high‐efficiency back‐contact back‐junction silicon solar cells results in a drastic increase of the pitch on the rear cell side. The pitch in the range of millimetres leads to a significant increase of the lateral base resistance. The application of a phosphorus doped front surface field (FSF) significantly reduces the lateral base resistance losses. This additional function of the phosphorus doped FSF in reducing the lateral resistance losses was investigated experimentally and by two‐dimensional device simulations. Enhanced lateral majority carrier's current transport in the front n⁺ diffused layer is a function of the pitch and the base resistivity. Experimental data show that the application of a FSF reduces the total series resistance of the measured cells with 3.5 mm pitch by 0.1 Ω cm² for the 1 Ω cm base resistivity and 1.3 Ω cm² for the 8 Ω cm base resistivity. Two‐dimensional simulations of the electron current transport show that the electron current density in the front n⁺ diffused layer is around two orders of magnitude higher than in the base of the solar cell. The best efficiency of 21.3% was obtained for the solar cell with a 1 Ω cm specific base resistivity and a front surface field with sheet resistance of 148 Ω/sq. Copyright © 2008 John Wiley & Sons, Ltd.