Preparation and Unit-Cell Parameters of Single Crystals of Ba2Ti9020

Ba₂Ti₉O₂₀ crystallizes in the monoclinic system with α= l.4818(5) nm, b = 1.4283(6), and c = 0.7109(2) with β = 98.37°±0.07°. The most likely space group is P 2₁/ m , Z = 4 with a calculated density 4.58 g/cm³. The powder pattern was indexed. The Ba₂Ti₉O₂₀ crystals form as stellated groups when melts of BaCl₂+ 20 to 50% TiO₂ cool from 1275°C.     

Microwave Dielectric Properties of Low-Fired Ba5Nb4O15

The effect of B₂O₃ on the sintering temperature and microwave dielectric properties of Ba₅Nb₄O₁₅ has been investigated using X-ray powder diffraction, scanning electron microscopy, and a network analyzer. Interactions between Ba₅Nb₄O₁₅ and B₂O₃ led to formation of second phases, BaNb₂O₆ and BaB₂O₄. The addition of B₂O₃ to Ba₅Nb₄O₁₅ resulted in lowering the sintering temperature from 1400° to 925°C. Low-fired Ba₅Nb₄O₁₅ could be interpreted by measuring changes in the quality factor ( Q × f ), the relative dielectric constant (ɛ_r), and the temperature coefficient of resonant frequency (τ_f) as a function of B₂O₃ additions. More importantly, the formation of BaNb₂O₆ provided temperature compensation. The microwave dielectric properties of low-fired Ba₅Nb₄O₁₅ had good dielectric properties: Q × f = 18700 GHz, ɛ_r= 39, and τ_f= 0 ppm/°C.     

Crystal Structure of the Microwave Dielectric Resonator Ba2Ti9O20

A single-crystal X-ray study of dibarium nonatitanate, Ba₂Ti₉O₂₀, yielded the triclinic space group P 1 with a =0.7471(1), b= 1.4081(2), c= 1.4344(2) nm, α=89.94(2)°, β= 79.43(2)°, γ= 84.45(2)°, V = 1.476 nm³ Z = 4, and D_x= 4.61 Mg/m³. A refinement of atomic coordinates and isotropic thermal parameters led to a residual of 0.03. The structure consists of hexagonally closest-packed layers of Ba and O atoms in the sequence (hch)₃. All Ti atoms reside in octahedral interstices of this closest packing. The various Ti coordination octahedra share only edges and corners with each other. One-half of the Ba atoms is twelve-coordinated by oxygen atoms, the other half is eleven-coordinated.     

Ba8ZnTa6O24: A New High Q Dielectric Perovskite

The hexagonal perovskite, Ba₈ZnTa₆O₂₄, was prepared in single-phase form and was found to be a stable secondary phase, formed as a result of the loss of ZnO from Ba(Zn_1/3Ta_2/3)O₃ microwave dielectrics. The experimental and calculated X-ray patterns of Ba₈ZnTa₆O₂₄ indicate it is isostructural with Ba₈Ta₆NiO₂₄ with an 8H (cchc)₂ close-packed BaO₃ stacking sequence and the lattice parameters, a =10.0825(14), c =19.0587(38)Å. High-density ceramics of Ba₈ZnTa₆O₂₄ could be prepared at temperatures considerably lower (1400°C) than those used to sinter pure Ba(Zn_1/3Ta_2/3)O₃, and exhibit very good microwave dielectric properties with ɛ=30.5, Q _f=62 300, and τ_f=+36 ppm/°C at 8.9 GHz.     

High-Temperature Mechanical Properties and Chemical Stability of Ba1+xZr4P6–2xSi2XO24 Low-Thermal-Expansion Ceramics

The NaZr₂P₃O₁₂ (NZP) family of materials is attracting increasing attention due to its low-thermal-expansion behavior. The system Ba_1+xZr₄P_6–2xSi_2xO₂₄ (0 ≤ x ≤ 1), belonging to the NZP family, shows ultralow thermal expansion over a wide temperature range. It also shows anisotropy in its lattice thermal expansion. This causes microcracking as the sintered specimens are cooled, which results in degradation of the mechanical properties. In this work, the chemical stability, strength, and Young's modulus of Ba_1+xZr₄P_6–2xO₂₄ ( X = 0.25 and 0.5) ceramics at high temperatures have been determined. An attempt has been made to correlate the mechanical properties to the thermal expansion anisotropy.     

High-Temperature Transmission Electron Microscopy and X-Ray Powder Diffraction Studies of Polymorphic Phase Transitions in Ba4Nb2O9

Polymorphic phase transitions in Ba₄Nb₂O₉ were studied by thermal analyses, high-temperature transmission electron microscopy and X-ray powder diffractometry. Two stable polymorphs were isolated, low-temperature α-modification and high-temperature γ-modification, with the endothermic phase transition at 1176°C. The α→γ transformation is accompanied by the formation of a 120° domain structure, which is a consequence of hexagonal→orthorhombic unit cell reconstruction. Reheating the presintered γ-Ba₄Nb₂O₉ results in the formation of a metastable γ'-modification (formerly known as β-polymorph) in the temperature range between 360° and 585°C, before the γ→α transformation at 800°C. Above ∼490°C Ba₄Nb₂O₉ becomes moderately sensitive to a loss of BaO. In air the surface of Ba₄Nb₂O₉ grains decomposes to nanocrystalline Ba₅Nb₄O₁₅ and BaO, which instantly reacts with atmospheric CO₂ to form BaCO₃. Surface reaction delays γ→α transformation up to 866°C in air. In vacuum the loss of BaO is even more enhanced and consequently the formation of minor Ba₃Nb₂O₈ phase is observed above 1150°C.     

Existence of the Ba2Ti5O12 Phase in Ca-Doped TiO2-Rich BaTiO3

A TEM investigation was conducted on the structure of a second phase precipitated between the grains of a polycrystalline TiO₂-rich BaTiO₃ which was doped with 8 mol% Ca. This phase was identified as Ca-stabilized Ba₂Ti₅O₁₂ with a 10-layer orthorhombic structure and unit-cell parameters a=0.990, b=1.131, and c=2.330 nm.     

Formation and Microwave Dielectric Properties of the Mg2V2O7 Ceramics

The formation process and microwave dielectric properties of the Mg₂V₂O₇ ceramics were investigated. The MgV₂O₆ phase that was formed at around 450°C interacted with remnant MgO above 590°C to form a homogeneous monoclinic Mg₂V₂O₇ phase. Finally, this monoclinic Mg₂V₂O₇ phase was changed to a triclinic Mg₂V₂O₇ phase for the specimen fired at 800°C. Sintering at 950°C for more than 5 h produced high-density triclinic Mg₂V₂O₇ ceramics. In particular, the Mg₂V₂O₇ ceramics sintered at 950°C for 10 h exhibited the good microwave dielectric properties of ɛ_r=10.5, Q × f =58 275 GHz, and τ_f=−26.9 ppm/°C.     

Orientation Relationships of Reactively Grown Ba6Ti17O40 and Ba2TiSi2O8 on BaTiO3 (001) Determined by X-ray Diffractometry

Fresnoite grows at 700° and 800°C, and Ba₆Ti₇O₄₀ grows at 1200°C with definite orientations, which are determined by X-ray diffraction pole figure analysis. Partially textured fresnoite is formed at higher temperatures. The SiO₂ films react with the BaTiO₃ crystals, forming the phases Ba₂TiSi₂O₈ (fresnoite) and Ba₆Ti₁₇O₄₀. At 700° and 800°C, both phases grow with definite orientations, which are determined by X-ray diffraction pole figure analysis. Partially textured polycrystalline phases are formed at higher temperatures.     

Effects of B2O3 on the Phase Stability of Ba2Ti9O20 Microwave Ceramic

Preparation of dense and phase-pure Ba₂Ti₉O₂₀ is generally difficult using solid-state reaction, since there are several thermodynamically stable compounds in the vicinity of the desired composition and a curvature of Ba₂Ti₉O₂₀ equilibrium phase boundary in the BaO–TiO₂ system at high temperatures. In this study, the effects of B₂O₃ on the densification, microstructural evolution, and phase stability of Ba₂Ti₉O₂₀ were investigated. It was found that the densification of Ba₂Ti₉O₂₀ sintered with B₂O₃ was promoted by the transient liquid phase formed at 840°C. At sintering temperatures higher than 1100°C, the solid-state sintering became dominant because of the evaporation of B₂O₃. With the addition of 5 wt% B₂O₃, the ceramic yielded a pure Ba₂Ti₉O₂₀ phase at sintering temperatures as low as 900°C, without any solid solution additive such as SnO₂ or ZrO₂. The facilities of B₂O₃ addition to the stability of Ba₂Ti₉O₂₀ are apparently due to the eutectic liquid phase which accelerates the migration of reactant species.     

Bismuth/Samarium Cosubstituted Ba6−3xNd8+2xTi18O54 Microwave Dielectric Ceramics

Modification of the microwave dielectric properties in Ba_{6−3 x} Nd_{8+2 x} Ti₁₈O₅₄ ( x = 0.5) solid solutions by Bi/Sm cosubstitution for Nd was investigated. A large increase in the dielectric constant and near-zero temperature coefficient combined with high Qf values were obtained in modified Ba_{6−3 x} Nd_{8+2 x} Ti₁₈O₅₄ solid solutions where an enlarged solid solution limit of Bi in Ba_{6−3 x} Nd_{8+2 x} Ti₁₈O₅₄ was observed. Excellent microwave dielectric characteristics (ɛ= 105, Qf = 4110 GHz, and very low τ_f) were achieved in the composition Ba_{6−3 x} (Nd_0.7Bi_0.18Sm_0.12)_{8+2 x} Ti₁₈O₅₄.     

Influence of Non-Stoichiometry on the Structure and Properties of Ba(Zn1/3Nb2/3)O3 Microwave Dielectrics: I. Substitution of Ba3W2O9

A narrow region of Zn-vacancy-containing cubic perovskites was formed in the (1− x )Ba₃(ZnNb₂)O₉−( x )Ba₃W₂O₉ system up to 2 mol% substitution ( x =0.02). The introduction of cation vacancies enhanced the stability of the 1:2 B-site ordered form of the structure, Ba(Zn_{1− x} □ _x )_1/3(Nb_{1− x} W _x )_2/3O₃, which underwent an order–disorder transition at 1410°C, ∼35° higher than pure Ba(Zn_1/3Nb_2/3)O₃. The Zn vacancies also accelerated the kinetics of the ordering reaction, and samples with x =0.006 comprised large ordered domains with a high lattice distortion ( c/a =1.226) after a 12 h anneal at 1300°C. The tungstate-containing solid solutions can be sintered to a high density at 1390°C, and the resultant ordered ceramics exhibit some of the highest microwave dielectric Q factors ( Q × f =1 18 000 at 8 GHz) reported for a niobate-based perovskite.     

Phase Relationships in the Si3N4–SiO2–Lu2O3 System

Phase relationships in the Si₃N₄–SiO₂–Lu₂O₃ system were investigated at 1850°C in 1 MPa N₂. Only J-phase, Lu₄Si₂O₇N₂ (monoclinic, space group P 2₁/ c , a = 0.74235(8) nm, b = 1.02649(10) nm, c = 1.06595(12) nm, and β= 109.793(6)°) exists as a lutetium silicon oxynitride phase in the Si₃N₄–SiO₂–Lu₂O₃ system. The Si₃N₄/Lu₂O₃ ratio is 1, corresponding to the M-phase composition, resulted in a mixture of Lu–J-phase, β-Si₃N₄, and a new phase of Lu₃Si₅ON₉, having orthorhombic symmetry, space group Pbcm (No. 57), with a = 0.49361(5) nm, b = 1.60622(16) nm, and c = 1.05143(11) nm. The new phase is best represented in the new Si₃N₄–LuN–Lu₂O₃ system. The phase diagram suggests that Lu₄Si₂O₇N₂ is an excellent grain-boundary phase of silicon nitride ceramics for high-temperature applications.     

Preparation of Ba6−3xNd8+2xTi18O54 via Ethylenediaminetetraacetic Acid Precursor

Ba_{6−3 x} Nd_{8+2 x} Ti₁₈O₅₄ ceramic powders were synthesized by the modified Pechini method using ethylenediaminetetraacetic acid (EDTA) as a chelating agent. A purplish red, molecular-level, homogeneously mixed gel was prepared, and transferred into a porous resin intermediate through charring. Single-phase and well-crystallized Ba_{6−3 x} Nd_{8+2 x} Ti₁₈O₅₄ powders were obtained from pulverized resin at a temperature of 900°C for 3 h, without formation of any intermediate phases. Meanwhile, the molar ratio of EDTA to total metal cation concentration had a significant influence on the crystallization behavior of Ba_{6−3 x} Nd_{8+2 x} Ti₁₈O₅₄. The Ba_{6−3 x} Nd_{8+2 x} Ti₁₈O₅₄ ( x = 2/3) ceramics prepared via EDTA precursor have excellent microwave dielectric characteristics: ɛ= 87, Qf = 8710 GHz.     

Formation Mechanism and Synthesis of Apatite-Type Structure Ba2+xLa8−x(SiO4)6O2−δ

The formation process of Ba₂La₈(SiO₄)₆O₂ was clarified using thermogravimetry–differential thermal analysis (TG-DTA) and a high-temperature powder X-ray diffraction (HT-XRD) method. Phase changes identified from the HT-XRD data surprisingly corresponded to the weight loss and/or endothermic peaks observed in the TG-DTA curves. Raw material with the composition Ba₂La₈(SiO₄)₆O₂ was completely reacted at 1400°C and produced only an apatite-type compound without a secondary phase. Moreover, the synthesis of Ba_{2+ x} La_{8− x} (SiO₄)₆O_2−δ crystals with x = 0–2 was attempted using a solid-state reaction.     

Crystallization Behavior of CaO–P2O5 Glass with TiO2, SiO2, and Al2O3 Additions

TiO₂ above 4 mol% is an effective nucleating agent for CaO–P₂O₅ glass which also contains substantial SiO₂ and Al₂O₃ additions. Glass ceramics can be made from this glass using a single slow heating ramp with no need for a nucleating heat treatment step. Powder of this composition crystallizes rapidly to β-Ca₂P₂O₇, whereas bulk glass crystallizes from diphasic nuclei consisting of a central cubic Ca-P-Ti-Si-Al oxide phase surrounded by impure AlPO₄ dendrites. Metastable calcium phosphate grows on the AlPO₄ dendrites and later transforms to β-Ca₂P₂O₇.     

Effect of Li2CO3 Addition on the Sintering Temperature and Microwave Dielectric Properties of Mg2V2O7 Ceramics

Li₂CO₃ was added to Mg₂V₂O₇ ceramics in order to reduce the sintering temperature to below 900°C. At temperatures below 900°C, a liquid phase was formed during sintering, which assisted the densification of the specimens. The addition of Li₂CO₃ changed the crystal structure of Mg₂V₂O₇ ceramics from triclinic to monoclinic. The 6.0 mol% Li₂CO₃-added Mg₂V₂O₇ ceramic was well sintered at 800°C with a high density and good microwave dielectric properties of ɛ _r=8.2, Q × f =70 621 GHz, and τ_f=−35.2 ppm/°C. Silver did not react with the 6.0 mol% Li₂CO₃-added Mg₂V₂O₇ ceramic at 800°C. Therefore, this ceramic is a good candidate material in low-temperature co-fired ceramic multilayer devices.     

Sol–Gel Preparation of BaTi4O9 and Ba2Ti9O20

BaTi₄O₉ and Ba₂Ti₉O₂₀ precursors were prepared via a sol–gel method, using ethylenediaminetetraacetic acid as a chelating agent. The sol–gel precursors were heated at 700°–1200°C in air, and X-ray diffractometry (XRD) was used to determine the phase transformations as a function of temperature. Single-phase BaTi₄O₉ could not be obtained, even after heating the precursors at 1200°C for 2 h, whereas single-phase Ba₂Ti₉O₂₀ (as determined via XRD) was obtained at 1200°C for 2 h. Details of the synthesis and characterization of the resultant products have been given.     

Ba2Ti9O20 as a Microwave Dielectric Resonator

Microwave measurements of Ba₂Ti₉O₂₀ show that this ceramic is uniquely suited for dielectric resonators. (Suitable ceramics should have a high dielectric constant K , a low dielectric loss (high Q ), and a low temperature coefficient of resonant frequency, τ.) At 4 GHz, Ba₂Ti₉O₂₀ resonators have Q >8000, K = 39.8, and τ=2 ppm/°C. Measurements of Q and τ were made on unmetallized ceramic resonator disks positioned in a waveguide; K was measured using a dielectric post resonator technique. From 4 to 10 GHz, Q approaches that for a copper waveguide cavity, whereas the temperature coefficient is typically 8 times lower.     

Effect of V2O5 Doping on the Sintering and Dielectric Properties of M-Phase Li1+x−yNb1−x−3yTix+4yO3 Ceramics

The effect of the addition of V₂O₅ on the structure, sintering and dielectric properties of M -phase (Li_{1+ x − y} Nb_{1− x −3 y} Ti _x +4 _y )O₃ ceramics has been investigated. Homogeneous substitution of V⁵⁺ for Nb⁵⁺ was obtained in LiNb_{0.6(1− x )}V_{0.6 x} Ti_0.5O₃ for x ≤ 0.02. The addition of V₂O₅ led to a large reduction in the sintering temperature and samples with x = 0.02 could be fully densified at 900°C. The substitution of vanadia had a relatively minor adverse effect on the microwave dielectric properties of the M -phase system and the x = 0.02 ceramics had [alt epsilon]_r= 66, Q × f = 3800 at 5.6 GHz, and τ_f= 11 ppm/°C. Preliminary investigations suggest that silver metallization does not diffuse into the V₂O₅-doped M -phase ceramics at 900°C, making these materials potential candidates for low-temperature cofired ceramic (LTCC) applications.