A 2.4-GHz silicon bipolar oscillator with integrated resonator

A 2.4 GHz fully-monolithic silicon-bipolar oscillator circuit implemented in a 12 GHz BiCMOS technology is presented. The integrated resonator circuit uses three different versions of a 2 nH multilevel inductor and a wideband capacitive transformer. The measured Q factor is 9.3 for the three-level inductor. An oscillator phase noise of -78 dBc/Hz is achieved at 20 kHz offset. The circuit dissipates 50 mW from a 3.6 V supply     

22 GHz monolithically integrated oscillator in silicon bipolartechnology

A monolithically integrated oscillator with a tuning range of 19.5-23 GHz is presented. The circuit uses on-chip spiral inductors and achieves a phase noise of -91 dBc/Hz at an offset of 1 MHz. It is manufactured in a 0.5 μm production-near silicon bipolar technology with f_T and f_max of 50 GHz. The oscillator consumes 18.5 mA at a supply voltage of 3.3 V     

An X‐Band Carbon‐Doped InGaP/GaAs Heterojunction Bipolar Transistor MMIC Oscillator

This paper addresses a fully‐integrated low phase noise X‐band oscillator fabricated using a carbon‐doped InGaP heterojunction bipolar transistor (HBT) GaAs process with a cutoff frequency of 53.2 GHz and maximum oscillation frequency of 70 GHz. The oscillator circuit consists of a negative resistance generating circuit with a base inductor, a resonating emitter circuit with a microstrip line, and a buffering resistive collector circuit with a tuning diode. The oscillator exhibits 4.33 dBm output power and achieves ?127.8 dBc/Hz phase noise at 100 kHz away from a 10.39 GHz oscillating frequency, which benchmarks the lowest reported phase noise achieved for a monolithic X‐band oscillator. The oscillator draws a 36 mA current from a 6.19 V supply with 47.1 MHz of frequency tuning range using a 4 V change. It occupies a 0.8 mm × 0.8 mm die area.     

A Wide Band Injection Locked Frequency Divider With Variable Inductor Load

This letter proposes a new wide band CMOS injection locked frequency divider (ILFD). The circuit is made of a two-stage differential CMOS ring oscillator and is based on MOS switches directly coupled to the differential outputs of the ring oscillator. A tuning circuit composed of inductors in series with a metal oxide semiconductor field effect transistor is used to extend the locking range. The divide-by-two ILFD can provide wide locking range and the measured results show that at the supply voltage of 1.8 V, the free-running frequency of the ILFD is operating from 0.92 to 3.6 GHz while the Vtune is tuned from 0 to 1.8 V. At the incident power of 0 dBm, this ILFD has a wide locking range from 1.15 to 7.4 GHz     

5-GHz Low Phase-Noise CMOS VCO Integrated With a Micromachined Switchable Differential Inductor

A 5-GHz CMOS voltage-controlled oscillator (VCO) integrated with a micromachined switchable differential inductor is reported in a 0.18 mum radio frequency-CMOS-based microelectromechanical system technology. The power consumption of the core is about 8 mW at the supply voltage of 1.8 V. A total tuning range of 470 MHz (from 5.13 GHz to 5.60 GHz) is achieved as the tuning voltage ranging from 0 V to 1.8 V. In the practical tuning range, the measured phase noise performances at 1 MHz offset are less than -125 dBc/Hz and -126 dBc/Hz when the inductor switch is turned on and off, respectively. The figure-of-merit is better than -190 dB. When compared with a contrast VCO circuit that utilizes a standard switchable differential inductor, this oscillator reaches a phase noise improvement of around 3 dB as the switch is turned on. Around 1-dB on-off phase noise difference can be achievable.     

Design of 10 GHz eight-phase voltage controlled oscillator in 90 nm CMOS

A novel 10 GHz eight-phase voltage-controlled oscillator(VCO) architecture applied in clock and data recovery(CDR) circuit for 40 Gbit/s optical communications system is proposed.Compared with the traditional eight-phase oscillator,a new ring CL ladder filter structure with four inductors is proposed.The VCO is designed and fabricated in IBM 90nm complementary metal-oxide-semiconductor transistor(CMOS) technology.Measurement results show the tuning range is 9.2 GHz～11.0 GHz and the phase noise of-108.85 dBc/Hz at 1 MHz offset from the carrier frequency of 10 GHz.The chip area of VCO is 500 μm× 685 μm and the power dissipation is 17.4 mW with the 1.2 V supply voltage.     

基于开关电容阵列的5.8GHz全集成LC压控振荡器设计

采用TSMC 0.18μm 1P6M RF CMOS工艺,完成了一种基于开关电容阵列的全集成LC压控振荡器的设计.版图后仿真结果表明,在1.8V电源电压下,电路核心功耗约为7.2mW,中心振荡频率为5.8GHz,在偏离中心频率1MHz处,该VCO的相位噪声为-121.8dBc/Hz,调谐范围为10.2%,满足交通专用短程通信系统的频段要求.     

Demonstration of sub-5 ps CML ring oscillator gate delay withreduced parasitic AlInAs/InGaAs HBT

We have demonstrated a gate delay of 4.9 ps and a power dissipation of 8 mW per CML inverter in an AlInAs-InGaAs HBT technology with 150 mV logic swing. The demonstration circuit was a 15-stage ring oscillator based on CML inverters with a fan-out of 1 and a nominal 3.1 V supply. The same circuit was measured to have a gate delay of 4.7 ps and a power dissipation of 13 mW per inverter using a 3.6 V supply, and a gate delay of 6.2 ps and a power dissipation of 2.4 mW per inverter with a 2.2 V supply. These are the fastest results for a bipolar transistor based logic family in any semiconductor and comparable to the fastest results for any logic family in any semiconductor. Because two gate delays are required for the simplest useful sequential logic circuits such as clocked flip-flops, this is a significant milestone in that it is the first, though somewhat idealized, demonstration that logic at 100 GHz is realizable in InP-based HBT     

Circuit Techniques for CMOS Divide-By-Four Frequency Divider

This letter describes circuit techniques for obtaining divide-by-four (divide4) frequency dividers (FDs) from CMOS ring-oscillator based injection locked frequency dividers (ILFDs). The circuit is made of a two-stage differential CMOS ring oscillator and is based on MOS switches directly coupled to the differential outputs of the ring oscillator. At the supply voltage of 1.8V and at the incident power of 0dBm, for a dual-band ILFD, the divide4 ILFD can provide a locking range of 6.3% from 5.39 to 6.12GHz at low band and 5.9% from 8.84 to 9.38GHz at high band when the dc bias of MOS switches V_inj changes from 0.7 to 1.1V     

一种2.45 GHz低成本微带压控振荡器的设计

为了满足教学和科研的需要,基于负阻原理设计了一款工作于ISM频段2.45 GHz低成本微带压控振荡器。振荡电路采用双电源供电和共基极连接方式,利用双极性晶体管和变容二极管等分立元件制作。借助于ADS软件对电路参数及主要指标进行仿真优化,并进行了实物的加工和测试。实测结果表明,设计的压控振荡器在输入调频电压为0⁶ V时,输出振荡频率覆盖2.46 V时,输出振荡频率覆盖2.4².5 GHz,输出功率大于9.2 d Bm,相位噪声在偏离移中心频率100 k Hz处为-90 d Bc/Hz。该振荡器调谐频带线性度好,输出功率平坦度高。     

基于802．11a标准的5GHz振荡器设计

介绍了一种全集成的LC压控振荡器（VCO）的设计。该振荡器的中心频率为5．25GHz,电源电压为1．8V,工作在802．11a标准下,采用0．18μmCMOS工艺实现。仿真结果表明。VCO的相位噪声在偏离中心频率1MHz时达到-121dBc／Hz,调谐范围达到31％,输出电压峰峰值为830mV,有良好的线性纯度。     

3GHz低功耗低相位噪声的带自偏置电流源的LC压控振荡器

利用0.18μm CMOS工艺实现了一个全集成的工作于3GHz的低功耗、低相位噪声的压控振荡器,且带有自偏置电流源.通过对改进的电流源进行优化,在噪声与功耗之间达到了折中.该压控振荡器可工作于2.83至3.25GHz频段内,调谐范围达到13.8%.当工作于3.22GHz时,测得的相位噪声在1MHz频偏处为-111dBc/Hz.在1.8V电源电压下,核心模块消耗电流小于2mA.表明该电路适合5GHz的无线局域网接收机以及3.4至3.6GHz的全球微波互联接入(WiMAX)应用.     

一个新结构低功耗2.5 GHz CMOS LC压控振荡器的设计

压控振荡器是锁相环电路的关键的组成部分之一,采用新的电流复用结构,可以明显降低该电路的功耗,而且由于没有尾电流,新结构还能有效改善电路的相位噪声.在TSMC 0.18 CMOS 1P6M工艺下的仿真结果表明:在1.25 V供电电压下振荡器的调节范围是2.26 GHz到2.76 GHz,在频偏1 MHz处的相位噪声为--130 dBc/Hz,平均功耗不超过1.2 mW.     

A Wide Locking Range Differential Colpitts Injection Locked Frequency Divider

This letter proposes a new wideband Colpitts injection locked frequency divider (ILFD) and describes the operation principle of the ILFD. The circuit consists of a differential CMOS LC-tank oscillator and a direct injection topology. The divide-by-two ILFD can provide wide locking range, and the measurement results show that at the supply voltage of 2.4 V, the tuning range of the free running ILFD is from 4.46 to 5.6 GHz, about 1.14 GHz, and the locking range of the ILFD is from 8.03 to 11.63 GHz, about 3.6 GHz, at the injection signal power of 0 dBm. The ILFD dissipates 19.92 mW at a supply voltage of 2.4 V and was fabricated in 1P6M 0.18 mum CMOS process. At the tuning voltage of 1.2 V, the measured phase noise of the free running ILFD is -110.8 dBc/Hz at 1 MHz offset frequency from 4.94 GHz and the phase noise of the locked ILFD is -135.4 dBc/Hz, while the input signal power is -4 dBm.     

High performance QVCO design with series coupling in CMOS technology

A high performance quadrature voltage-controlled oscillator（QVCO） is presented.It has been fabricated in SMIC 0.18μm CMOS technology with top thick metal.The proposed QVCO employed cascade serial coupling for in phase and quadrature phase signal generation.Source degeneration capacitance is added to the NMOS differential pair to suppress their flicker noise from up-conversion to close in phase noise.A dedicated low noise and high power supply rejection low drop out regulator is used to supply this QVCO.The measured phase noise of the proposed QVCO achieves phase noise of-123.3 dBc/Hz at an offset frequency of 1 MHz from the carrier of 4.78 GHz,while the QVCO core circuit and LDO draw 6 mA from a 1.8 V supply.The QVCO can operate from 4.09 to 4.87 GHz（17.5%）.Measured tuning gain of the QVCO(K_vco) spans from 44.5 to 66.7 MHz/V.The chip area excluding the pads and ESD protection circuit is 0.41 mm².     

V-Band GaAs pHEMT Cross-Coupled Sub-Harmonic Oscillator

A$V$-band cross-coupled sub-harmonic injection-locked oscillator has been designed and fabricated using 0.15-$mu$m GaAs pHMET technology. Based on the known harmonic injecting circuit topology, this oscillator was designed by a differential output approach, a low-$Q$microstrip-line resonator, and a current mirror, which has a free-running oscillation frequency around 60GHz with a tuning range of 2.5GHz (from 57.8GHz to 60.3GHz). The maximum single-end output power is 3.8dBm with a dc dissipation of 225mW under a$-$3V supply voltage. Within the input matching network for second (30GHz) and fourth (15GHz) sub-harmonic signals injection, it demonstrates the maximum locking ranges close to 120MHz and 30MHz, respectively.     

LC voltage controlled oscillator in 0.18-μm RF CMOS

An integrated low-phase-noise voltage-controlled oscillator(VCO) has been designed and fabricated in SMIC 0.18μm RF CMOS technology.The circuit employs an optimally designed LC resonator and a differential cross-coupling amplifier acts as a negative resistor to compensate the energy loss of the resonator.To extend the frequency tuning range,a three-bit binary-weighted switched capacitor array is used in the circuit.The testing result indicates that the VCO achieves a tuning range of 60%from 1.92 to 3.35 GHz.The phase noise of the VCO is -117.8 dBc/Hz at 1 MHz offset from the carrier frequency of 2.4 GHz.It draws 5.6 mA current from a 1.8 V supply.The VCO integrated circuit occupies a die area of 600×900μm~2.It can be used in the IEEE802.11 b based wireless local network receiver.     

射频卫星电视天线电路中LC压控振荡器设计

本文设计了一款应用于卫星电视天线电路中低功耗、低相噪的宽带单片集成压控振荡器。该振荡器利用PMOS尾电流源和MIM电容阵列结构。在保证调谐范围的前提下,有效的降低了相位噪声。使得该压控振荡器实现了3.384GHz~4.022GHz频段的覆盖,在中心频率为3.7GHz时,100Hz和1MHz频偏处的相位噪声分别为-90.4dBc/Hz和-119.1dBc/Hz,工作电压下为1.8V,功耗仅为2.5mW。     

A Wide Locking Range LC-Tank Injection-Locked Frequency Divider

This letter proposes a wideband injection-locked frequency divider (ILFD) and describes the operation principle of the ILFD. The circuit is made of a differential CMOS LC-tank oscillator and is based on the direct injection topology. The wideband function is obtained by tuning the switch across the tank inductors. The divide-by-two ILFD can provide wide locking range and the measurement results show that at the supply voltage of 1.8 V, the dual-band divider free-running frequencies are from 1.77 to 2.17 GHz for the low-band mode, and from 2.59 to 3.2 GHz for the high-band mode. At the incident power of 0 dBm, the locking range is about 1.7 GHz from the incident frequency 3.31 to 5.01 GHz at low band and 4.06 GHz from 3.94 to 8.0 GHz at high-band mode. The circuit can be used as a single wideband ILFD.     

LC-Tank Colpitts Injection-Locked Frequency Divider With Even and Odd Modulo

A new injection-locked frequency divider (ILFD) using a standard 0.18 $mu$m CMOS process is presented. The ILFD is based on a differential Colpitts voltage controlled oscillator (VCO) with a direct injection MOSFET for coupling an external signal to the resonators. The VCO is composed of two single-ended VCOs coupled with two transformers. Measurement results show that at the supply voltage of 1.4 V the divider's free-running frequency is tunable from 4.77 to 5.08 GHz, and the proposed circuit can function as a first harmonic injection-locked oscillator, divide-by-2, -3, and -4 frequency divider. At the incident power of 0 dBm the divide-by-2 operation range is from the incident frequency 7.7 to 11.5 GHz and the divide-by-4 operation range is from the incident frequency 18.9 to 20.2 GHz.