sol-gel法制备ZnO薄膜压敏电阻

利用sol-gel法在镀有Au底电极的单晶硅片上,制备掺有Bi2O3、Co2O3、Cr2O3和MnO2的ZnO薄膜压敏电阻。薄膜由旋涂法制备,并在300℃下预处理、600℃退火。制得的ZnO薄膜结晶良好。膜厚约为1μm,ZnO薄膜压敏电阻的非线性系数为15.1,压敏电压为3.037 V,漏电流为43.25μA。     

氧化物掺杂ZnO-Ba_(0.8)Sr_(0.2)TiO_3复合陶瓷的制备及电性能研究

采用固相法制备了氧化物掺杂ZnO-Ba0.8Sr0.2TiO3复合陶瓷,并利用X射线衍射仪和扫描电子显微镜对其晶相及微观形貌进行了观测;另外,研究了氧化物掺杂对陶瓷介电性能及压敏性能的影响。结果表明,当掺杂摩尔分数为0.50%的Bi2O3和0.50%的Sb2O3时,陶瓷在室温下的εr为36402,tanδ为0.065;在此基础上继续掺入0.25%的MnO和0.35%的Cr2O3,陶瓷的非线性系数α为5.4,漏电流IL为1.5×10–6A/mm2,压敏电压为3.0V。Bi2O3、Sb2O3、MnO和Cr2O3掺杂使ZnO-Ba0.8Sr0.2TiO3复合陶瓷的介电性能和压敏性能同时得到了有效提高。     

Y~(3+)掺杂ZnO压敏陶瓷的微结构和电性能研究

采用两步烧结法制备了Y3+掺杂的(以Y(NO3)3·6H2O形式加入)ZnO压敏陶瓷,通过XRD、SEM和EDX系统研究了Y3+掺杂量对ZnO压敏陶瓷微结构和电性能的影响。结果表明:随着Y3+掺杂量的增加,电位梯度VT和非线性系数α提高,晶粒尺寸减小,施主浓度Nd和晶界态密度Ns降低,势垒宽度ω增大。当掺杂的x[Y(NO3)3·6H2O]为1.2%、烧结温度为1100℃时,ZnO压敏陶瓷电性能最好,其VT为675V/mm,α为63.9,漏电流IL为2.40μA。     

改性钙钛酸铅陶瓷的电导性能研究

当掺钙钛酸铅(PCT)用作为压电、热释电材料时,除介电性能外,电导性能也是重要的性能参数。采用传统固相法制备掺钙钛酸铅系陶瓷,研究了不同掺杂量的Sb2/3Mn1/3及烧结助剂NiO、Bi2O3对陶瓷相结构、介电损耗和电导性能的影响。结果表明,在1 180℃下烧结2h,得到纯钙钛矿结构的改性陶瓷,陶瓷介电损耗降低;Sb2/3Mn1/3掺杂量对PCT系陶瓷在20~40℃的电阻温度稳定性有明显影响,随Sb2/3Mn1/3含量增加电阻温度系数(TCR)增大;在Pb0.80Ca0.20(Sb2/3Mn1/3)0.05Ti0.95O3中加入NiO、Bi2O3后有效降低了陶瓷在20~40℃的电阻温度系数;掺杂元素种类和掺杂量对陶瓷在20~80℃的TCR值基本没有影响,TCR值约为-0.15μ℃-1。     

Na和Ti掺杂对Bi_2(Zn_(1/3)Nb_(2/3))_2O_7陶瓷性能的影响

采用传统固相反应法制备了Na-Ti掺杂Bi2(Zn1/3Nb2/3)2O7陶瓷。研究了Na+替代Bi3+,Ti4+替代Nb5+对Bi2(Zn1/3Nb2/3)2O7陶瓷烧结特性、显微结构和介电性能的影响。结果表明,掺入Na+和Ti4+后,Bi2(Zn1/3Nb2/3)2O7陶瓷的烧结温度从1000℃降到了860℃左右;在–30℃～+130℃的温度范围内,Na-Ti掺杂Bi2(Zn1/3Nb2/3)2O7陶瓷表现出明显的、激活能约为0.3eV的介电弛豫现象。这主要是由缺陷偶极子和晶格畸变在陶瓷中的出现引起的。     

Pr系ZnO压敏陶瓷的sol-gel法制备及电性能研究

以Zn(N03)2和NaOH为原料,采用sol-gel法制备了Pr系ZnO压敏陶瓷.研究了所制压敏粉体和压敏陶瓷的性能.结果表明:干凝胶在700℃下煅烧2 h,得到球状Pr系ZnO粉体颗粒,平均粒径为200 nm.1 220℃烧结制备的Pr系ZnO压敏陶瓷性能优异:晶粒大小约为3.2μm,压敏电压为910 V/mm,非...     

Bi2O3对TiO2系压敏陶瓷性能的影响

采用传统电子陶瓷工艺制作了TiO2系压敏陶瓷。通过测试其I-V特性、复阻抗特性、晶界电阻、晶粒电阻及势垒高度,研究了Bi2O3对TiO2-Bi2O3-Nb2O5-SrO系压敏陶瓷微结构及电性能的影响。结果表明,Bi2O3的适当掺杂范围在0.3%~0.5%(摩尔分数)。其掺杂量的变化,可显著改变TiO2-Bi2O3-Nb2O5-SrO系压敏陶瓷的晶界电阻及势垒高度,进而对压敏陶瓷的电学非线性特性产生影响。当x(Bi2O3)为0.4%时,压敏陶瓷的V1mA与α分别为40V/mm与6.2。     

La2O3的掺杂对氧化锌压敏陶瓷电性能的影响

采用传统固相法制备稀土氧化物La2O3掺杂的ZnO压敏陶瓷。采用X线衍射(XRD)、扫描电子显微镜(SEM)和压敏电阻直流参数仪对样品的物相、显微组织及电性能进行分析。结果表明,随着La2O3掺杂量的增加,ZnO压敏陶瓷电位梯度单调递增,非线性系数先增加后减小,而漏电流呈现先减小后增大的变化趋势。综合衡量ZnO压敏电阻的各项性能指标发现,在1 000 ℃烧结温度下,La2O3的质量分数为0.25%时,ZnO压敏电阻的综合性能最好,其电位梯度为532.2 V/mm,非线性系数为41.6,漏电流为3.3 μA。     

Sb2O3掺杂对ZnO薄膜光吸收性能的影响

采用RF磁控溅射技术制备了Sb2O3掺杂ZnO薄膜,通过X射线光电子能谱仪（XPS）、X射线衍射仪（XRD）和紫外-可见光（UV-Vis）分光光度计研究了Sb2O3对ZnO薄膜结构和光吸收性能的影响。结果表明：Sb2O2的掺杂影响了ZnO的原子和电子状态、晶粒的生长方式和光吸收性能。薄膜中Sb以多种形态存在：替位原子和化合物（Sb2O3、Zn,Sb2O14）等,ZnO呈混晶方式生长;随着Sb含量的增加,其引起的晶格畸变和次晶相的含量逐渐增加;掺杂薄膜在远紫外（UVA）波段的吸收显著增强,UV吸收峰变窄,强度增大,吸收边变得陡峭且向短波方向移动达5nm,在Vis波段的吸收有所增强。     

激光冲击波对ZnO压敏陶瓷电学性能的影响

为了研究激光冲击处理对ZnO压敏陶瓷电学性能的影响,采用Nd:YAG激光器对ZnO压敏陶瓷进行激光冲击处理,利用压敏电阻直流参量仪（CJ1001型）测量材料电学参量和X射线衍射仪、电子扫描显微镜表征相组成及微观形貌,取得了激光冲击处理前后ZnO压敏陶瓷电学性能的实验数据。结果表明,ZnO压敏陶瓷经激光冲击处理后,电位梯度降低了15.6%;非线性系数大幅提高了43.4%;漏电流降低了50%;同时,ZnO压敏陶瓷相组成除高温烧结态(包括ZnO主晶相、Zn2.33Sb0.67O4尖晶石相以及-Bi2O3相)外,而还出现了新相-Bi2O3相。新相的出现是材料电学性能变化的根本原因。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks