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A physics‐based model of AlGaN/GaN High Electron Mobility Transistor (HEMT) is developed for the analysis of DC and microwave characteristics. Large‐ and small‐signal parameters are calculated for a given device dimensions and operating conditions. Spontaneous and piezoelectric polarizations at the heterointerface and finite effective width of the 2DEG gas have been incorporated in the analysis. The model predicts a maximum drain current of 523 mA/mm and transconductance of 138 mS/mm for a 1 μm × 75 μm device, which are in agreement with the experimental data. © 2007 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2007. 相似文献