IGBT作为硬开关和软开关应用的模拟

建立了用ＰＳＰＩＣＥ软件包模拟ＩＧＢＴ特性的等效电路模型,并利用此模型模拟了ＩＧＢＴ的硬开关和软开关特性。模拟结果表明,ＩＧＢＴ作为硬开关的关断电流波形由器件本身决定;作为软开关的关断电流波形则外电路决定,即由与器件相关联接的缓冲电容Ｃｓ决定,得到的结论是,器件与电路的互相影响能够有效地用来折中器件的功率损耗与开关速度。     

IGBT开关型脉冲激光电源

本文所述的ＩＧＢＴ开关型脉冲激光电源适用于泵浦高频脉冲ＹＡＧ激光器。由于采用新型的ＩＧＢＴ逆变开关和先进的数字控制技术，并进行全面的电磁兼容设计，使该光电源的总体技术性能和可靠性大大提高。文中叙述了激光电源的主电路，控制电路以及调Ｑ电路的工作原理，并给出了主要参数的实测波形及简要分析。     

低损耗的IGBT／MOSFET并联开关在开关电源中的应用

介绍一种由ＭＯＳＦＥＴ和ＩＧＢＴ组成的新颖的低损耗关联开关的构成，工作原理，以及在高频大功率开关电源中的应用，并比较了使用并联组合开关和使用ＭＯＳＦＥＴ（或ＩＧＢＴ）的损耗，给出了在产品的使用效果。     

GTO关断特性的SPICE模拟

本文提出了用于模拟ＧＴＯ关断特性的ＳＰＩＣＥ等效电路模型．根据器件的工作特性并结合器件结构提取模型参数．用此模型对１０００Ａ／２５００Ｖ阳极短路型ＧＴＯ的关断特性进行了模拟，包括关断电流拖尾现象在内的整个关断过程，模拟结果与器件的测试结果吻合较好．     

IGBT功率开关模块的发展及应用

文章首先概述了ＩＧＢＴ功率开关模块的发展动态，其次总结和比较了第二、第三以及第四代ＩＧＢＴ功率开关模块的各项技术性能参数，最后着重强调了ＩＧＢＴ的使用及使用中的几个关键性问题。     

SUPETEX推出400V电话线开关IC

ＳＵＰＥＴＥＸ推出４００Ｖ电话线开关ＩＣ美国Ｓｕｐｅｒｔｅｘ公司日前宣布推出专用于电话线中的高压单片集成开关ＨＴ０６４０。该器件的关断电流非常低，并可对峰值电流进行限制，主要用于电话机的摘／挂机开关。ＨＴ０６４０的额定击穿电压（ＶＴＰＧ）为４００Ｖ，...     

IGBT驱动及保护技术研究

ＩＧＢＴ正逐渐成为中、大功率电源产品设计中的首选开关年,ＩＧＢＴ的使用成功与否关害于其驱动及保护电路的设计,本文讲述这方面的内容。     

新型发射极开关类晶闸管

本文提出了两种新型发射极开关晶闸管：辅助关断发射极开关晶闸管ＡＯＥＳＴ和双注入发射极开关晶闸管ＤＩＥＳＴ。研究了发射极开关类晶闸管ＥＳＴ、ＡＯＥＳＴ、ＤＩＥＳＴ正向工作特性及关态工作特性，比较了它们各自的优缺点，同时为该类功率器件发展提出了设想。     

软开关三相逆变器模式的特征分析

近年来零电压开关PWM变频技术受到人们的普遍关注。其基本思想是，通过零电压开关电路使逆变器主电路在各载波周期起始时刻产生谐振，确保各功率开关器件在主电路P、N极间电压为零期间进行动作切换。为了使谐振电路正常工作，通常采用正负斜率交替的锯齿波作为载波，这使得该PWM模式的零电压矢量的作用时间较传统硬开磁SPWM模式发生了很大变化。本文利用空间电压矢量概念，深入分析了软开关PWM模式下磁链的运动轨迹。指出在硬开关PWM模式下，磁链的运动速度靠零空间电压矢量调节；而在软开关PWM模式下，空间电压矢量的作用时间发生了很大变化，有时甚至没有零空间电压矢量。但该模式依靠非零空间电压矢量进行调节，使得磁链的运动速度仍然保持与硬开关时完全相等。文章还分析了软开关PWM逆变器电流波形畸变的原因，并从磁链轨迹圆出发，提出相应的补偿方法。实验证明了该方法能有效地改善逆变器的输出电流波形。     

新型功率器件IGBT及其辐照效应

简要分析了ＩＧＢＴ器件的工作机理，对制作的２０Ａ／１０５０Ｖ ＩＧＢＴ芯片进行了中子辐照实验，并对比了辐照前后器件的关断特性，发现辐照可提高器件的开关速度，但也导致了器件有关特性的退化。     

一个快速高压固态开关的设计及实现

大多数固态功率开关中，开关速度会随着电源的增加而降低。基于这种原因，有很多方法在高功率下可获得合适速度。其方法之一是中压和额定电流大功率开关串联或并联的开关结构。这篇文章研究了不同型号的快速固态功率开关并选择IGBT作为开关单元。为了模拟，设计了IGBT的微观工作模型。最后，采用了8个IGBT串联的原型固态开关结构并且在7KV和600A下测试，其开通时间少于150纳秒。     

Reverse‐Conducting IGBT Using MEMS Technology on the Wafer Back Side

In this paper, we present a 600‐V reverse conducting insulated gate bipolar transistor (RC‐IGBT) for soft and hard switching applications, such as general purpose inverters. The newly developed RC‐IGBT uses the deep reactive‐ion etching trench technology without the thin wafer process technology. Therefore, a freewheeling diode (FWD) is monolithically integrated in an IGBT chip. The proposed RC‐IGBT operates as an IGBT in forward conducting mode and as an FWD in reverse conducting mode. Also, to avoid the destructive failure of the gate oxide under the surge current and abnormal conditions, a protective Zener diode is successfully integrated in the gate electrode without compromising the operation performance of the IGBT.     

A soft switching active snubber optimized for IGBT's in singleswitch unity power factor three-phase diode rectifiers

This paper describes a soft switching active snubber for an IGBT operating in a single switch unity power factor three-phase diode rectifier. The soft switching snubber circuit provides zero-voltage turn-off for the main switch. The high turn-off losses of the IGBT due to current tailing are reduced by zero-voltage switching. This allows the circuit to be operated at very high switching frequencies with regulated DC output voltage, high quality input current and unity input power factor. Simulation and experimental results are included     

4500V SPT IGBT 动静态损耗优化

本文关注高压IGBT动静态性能的优化。对4500V增强型平面IGBT进行研究,该结构在阴极一侧具有载流子存储层。其中垂直结构采用软穿通(SPT)结构,顶部结构采用增强型平面结构,该结构被称为SPT IGBT,仿真结果显示4500V SPT 具有软关断波形,与SPT结构相比提升了导通压降和关断损耗之间的折衷关系。同时,对不同载流子存储层掺杂浓度对动静态性能的影响也进行了研究,以此来优化SPT IGBT的动静态损耗。     

IGBT modules robustness during turn-off commutation

The behaviour in terms of robustness during turn-off of power IGBT modules is presented. The experimental characterisation is aimed to identify the main limits during turn-off in power IGBT modules in typical hard switching applications. In this paper an experimental characterization of high power IGBT modules at output currents beyond RBSOA, at high junction temperatures and under different driving conditions is presented. Several devices of different generations, current and voltage ratings have been considered. The experimental characterisation has been performed by means of a non-destructive experimental set-up where IGBT modules are switched in presence of a protection circuit that is able to prevent device failure at the occurrence of any possible instable behaviour. The experimental analysis confirms the very good robustness of high power IGBT modules which can withstand large current overstress well beyond the declared RBSOA limits even at temperatures larger than those one declared by manufacturers. A comparison between IGBT device generation is also presented.     

Boost ZCT-PWM变换器的改进及仿真分析

针对传统的Boost ZCT-PWM变换器中存在的主开关管硬开通和辅助开关管硬关断的问题,提出一种改进型的Boost ZCT-PWM变换器,使主开关管零电流开通,辅助开关管零电流通断,并且特别适用于IGBT作为开关器件的高电压、大功率应用场合。分析电路的工作原理并用PSpice仿真软件进行仿真研究。仿真结果表明所有开关器件实现了软开关,变换器的效率得到提高。     

An IGBT Gate Driver for Feed-Forward Control of Turn-on Losses and Reverse Recovery Current

This paper addresses the problem of turn on performances of an insulated gate bipolar transistor (IGBT) that works in hard switching conditions. The IGBT turn on dynamics with an inductive load is described, and corresponding IGBT turn on losses and reverse recovery current of the associated freewheeling diode are analysed. A new IGBT gate driver based on feed-forward control of the gate emitter voltage is presented in the paper. In contrast to the widely used conventional gate drivers, which have no capability for switching dynamics optimisation, the proposed gate driver provides robust and simple control and optimization of the reverse recovery current and turn on losses. The collector current slope and reverse recovery current are controlled by means of the gate emitter voltage control in feed-forward manner. In addition the collector emitter voltage slope is controlled during the voltage falling phase by means of inherent increase of the gate current. Therefore, the collector emitter voltage tail and the total turn on losses are significantly reduced. The proposed gate driver was experimentally verified and compared to a conventional gate driver, and the results are presented and discussed in the paper.     

The robustness of series-connected high power IGBT modules

The behaviour in terms of robustness of series-connected high power IGBT modules is presented, arranged in a topology which ensures voltage balance on IGBT’s and diodes by means of a simple auxiliary circuit applied directly on the high power devices, which are used in hard switching mode. Analyses in terms of IGBT and diode SOA (safe operating area), collector to emitter voltage gradient and short circuit condition are reported as well as an extended experimental characterisation. Both analyses confirm superior switching rating and system reliability, by using two series-connected IGBT in substitution of a single module, same current and double voltage rated. Moreover, thanks the auxiliary circuit presence, the robustness of total system is maintained also in extreme operating conditions.     

MOSFET和IGBT器件在开关电源中的一种应用方法及其仿真

为了降低开关电源中开关器件的开关损耗,介绍一种带辅助管的软开关实现方法,将IGBT和MOSFET这两种器件组合起来,以IGBT器件为主开关管,MOSFET器件为辅助开关管,实现零电流（ZCS）软开关模式。先从理论分析入手,提出电路形式以及开关方法,然后针对这种开关方法的不足之处,提出改进后的开关方法。交替开关方法。并在PSpice中对所有结论通过了仿真验证。     

A new ZVT-PWM DC-DC converter

In this paper, a new active snubber cell that overcomes most of the drawbacks of the normal "zero voltage transition-pulse width modulation" (ZVT-PWM) converter is proposed to contrive a new family of ZVT-PWM converters. A converter with the proposed snubber cell can also operate at light load conditions. All of the semiconductor devices in this converter are turned on and off under exact or near zero voltage switching (ZVS) and/or zero current switching (ZCS). No additional voltage and current stresses on the main switch and main diode occur. Also, the auxiliary switch and auxiliary diodes are subjected to voltage and current values at allowable levels. Moreover, the converter has a simple structure, low cost, and ease of control. A ZVT-PWM boost converter equipped with the proposed snubber cell is analyzed in detail. The predicted operation principles and theoretical analysis of the presented converter are verified with a prototype of a 2 kW and 50 kHz PWM boost converter with insulated gate bipolar transistor (IGBT). In this study, a design procedure of the proposed active snubber cell is also presented. Additionally, at full output power in the proposed soft switching converter, the main switch loss is about 27% and the total circuit loss is about 36% of that in its counterpart hard switching converter, and so the overall efficiency, which is about 91% in the hard switching case, increases to about 97%