Fabrication of sub-micron structures for MEMS using deep X-ray lithography

Fabrication techniques of microstructures with high resolution and high aspect ratio are necessary for practical microelectromechanical systems (MEMS) that have high performance and integration. In order to fabricate microstructures with sub-micron resolution and high aspect ratio, deep X-ray lithography has been investigated using the compact synchrotron radiation (SR) light source called “AURORA”. An X-ray mask for sub-micron deep X-ray lithography, which is composed of 1 μm thick Au as absorbers, 2 μm thick SiC as a membrane and 625 μm thick Si as a frame, was designed. In preliminary experiments, the following results were achieved: EB resist microstructures with an aspect ratio of 22 corresponding with 0.07 μm width and 1.3 μm height were formed; a 10 μm thick PMMA resist containing no warp was formed by direct polymerization, enabling more precise gap control.     

Fabrication of RF MEMS variable capacitors by deep X-ray lithography and electroplating

Radio frequency micro electro-mechanical systems (RF MEMS) vertical cantilever variable capacitors fabricated using deep X-ray lithography and electroplating are presented. Polymethylmethacrylate (PMMA) layers of 100 μm and 150 μm have been patterned and electroplated with 70 μm and 100 μm thick nickel. A 3 μm thick titanium layer was used as plating base as well as etch time-controlled sacrificial layer for the release of the cantilever beam. The parallel plate layout includes narrow gaps and cantilever beams with an aspect ratio in nickel of up to 60 for 1 mm long features. Auxiliary structures support the beams and gaps during the processing. Room temperature electroplating significantly reduces the risk of deformations compared to the standard process temperature of 52°C. The capacitors operate in the 1–5 GHz range, and demonstrate good RF performance, with quality factors on the order of 170 at 1 GHz for a 1 pF capacitance.     

Validation of X-ray lithography and development simulation system for moving mask deep X-ray lithography

This paper presents a newly developed 3-Dimensional (3-D) simulation system for Moving Mask Deep X-ray Lithography (M/sup 2/DXL) technique, and its validation. The simulation system named X-ray Lithography Simulation System for 3-Dimensional Fabrication (X3D) is tailored to simulate a fabrication process of 3-D microstructures by M/sup 2/DXL. X3D consists of three modules: mask generation, exposure and resist development (hereafter development). The exposure module calculates a dose distribution in resist using an X-ray mask pattern and its movement trajectory. The dose is then converted to a resist dissolution rate. The development module adopted the "Fast Marching Method" technique to calculate the 3-D dissolution process and resultant 3-D microstructures. This technique takes into account resist dissolution direction that is required by 3-D X-ray lithography simulation. The comparison between simulation results and measurements of "stairs-like" dose deposition pattern by M/sup 2/DXL showed that X3D correctly predicts the 3-D dissolution process of exposed PMMA.     

Deep X-ray lithography using mask with integrated electrothermal actuator

We present a deep X-ray mask with integrated bent-beam electrothermal actuator for the fabrication of 3D microstructures with curved surface. The mask absorber is electroplated on the shuttle mass, which is supported by a pair of 20-m-thick single crystal silicon bent-beam electrothermal actuators and oscillated in a rectilinear direction due to the thermal expansion of the bent-beams. The width of each bent-beam is 10 m or 20 m and the length and bending angle are 1 mm and 0.1 rad, respectively, and the shuttle mass size is 1 mm × 1 mm. For 10-m-wide bent-beams, the shuttle mass displacement is around 15 m at 180 mW (3.6 V) dc input power. For 20-m-wide bent-beams, the shuttle mass displacement is around 19 m at 336 mW (4.2 V) dc input power. Sinusoidal cross-sectional PMMA microstructures with a pitch of 40 m and a height of 20 m are fabricated by 0.5 Hz, 20-m-amplitude sinusoidal shuttle mass oscillation.This research, under the contract project code MS-02-338-01, has been supported by the Intelligent Microsystem Center, which carries out one of the 21st centurys Frontier R & D Projects sponsored by the Korea Ministry of Science & Technology. Experiments at PLS were supported in part by MOST and POSCO.     

Fabrication of microgratings on PMMA plate and curved surface by using copper mesh as X-ray lithography mask

We demonstrate experimentally the X-ray lithography technique to fabricate microgratings on a PMMA plate and on curved surfaces such as PMMA cylinder lens surfaces with X-ray lithography by copper mesh as mask. Some gratings with 12.7 μm pitches on the plate and on PMMA curved surface with large area (10 mm × 10 mm) by vertically moving or rotating the resist stage exposure are realized.     

Design of solenoidal electromagnetic microactuator utilizing 3D X-ray lithography and metalization

Investigations of microactuators are actively being pursued in various viewpoint, researchers are exploring output energy sources such as electrostatic, piezoelectric, electromagnetic and etc. We focus attention recently on the electromagnetic microactuator. In generally, electromagnetic actuator is not well suited to miniaturization because of decreased output force when miniaturized. However, we have already developed 3D-LIGA process to produce a spiral microcoil in 2003. Then, the production process of a smaller and higher output force microactuator was devised based on this technology.     

Fabrication of intermediate mask for deep x-ray lithography

 This paper presents the fabrication of intermediate x-ray mask for deep x-ray lithography. In order to have working mask with absorbers thickness larger than 10 μm, the intermediate mask should have absorbers of 0.7 μm in thickness. To demonstrate intermediate mask fabrication, x-ray zone plates are fabricated on the 1.2 μm low-stress silicon-rich silicon nitride (SiN_x) membrane with the tri-layer Chromium-Tungsten-Chromium (Cr–W–Cr) as the x-ray absorbers. The chromium layers both 200 angstroms are used as adhesion and for stress relief. The SiN_x film is deposited with low pressure chemical vapor deposition (LPCVD) and the free standing membrane are formed by KOH silicon backside etching. With the e-beam lithography and reactive ion etching, width of 0.8 μm of outmost zone of the x-ray zone plates has been achieved on the membrane. The scanning electron microscopy (SEM) images of the x-ray zone plates and pictures of intermediate masks are demonstrated. Received: 25 August 1997/Accepted: 3 September 1997     

Design and fabrication of a SU-8 based electrostatic microactuator

Comb-drive microactuator is widely used in MEMS devices and traditionally is made of silicon as structural material using silicon-based fabrication technology. Recent development in UV lithography of SU-8 has made it possible to fabricate the ultra high aspect ratio microstructures with excellent sidewall quality. In this paper, we report a low cost alternative to the silicon-based comb drive by using cured SU-8 polymer as structural material. The microactuator was designed to have a integrated structure without assembly or bonding. A unique integration fabrication process was successfully developed based on UV lithography of SU-8 and selectively metallizing SU-8 polymer structures. Preliminary experimental results have proved the feasibility of the microactuator and the fabrication technology.     

Fabrication of X-ray imaging zone plates by e-beam and X-ray lithography

X-ray imaging and microscopy techniques have been developed in worldwide due to their capabilities of large penetration power and high spatial resolution. Fresnel zone plates is considered to be one of the most convenient optic devices for X-ray imaging and microscopy system. The zone plates with aspect ratio of 7 and 13 have been fabricated by e-beam lithography combined with X-ray lithography in this paper. Firstly, the X-ray lithography mask of zone plates with outermost zone width of 100 nm was fabricated by e-beam lithography and gold electroplating techniques. Secondly, the zone plates with gold profile thickness of 700 and 1,300 nm were replicated by X-ray lithography and gold electroplating techniques. X-ray imaging and microscopy techniques were introduced to characterize the high-aspect-ratio zone plates’ inner structures. At the X-ray energy of 7.5 keV, the first-order focusing efficiency of zone plates with gold profile thickness of 700 nm is about 8.63%.     

Optimization of laser writer-based UV lithography with high magnification optics to pattern X-ray lithography mask templates

Deep X-ray lithography is a preferred fabrication approach for those micro devices that depend on smooth and vertical sidewalls of comparatively deep structures rather than extreme lateral resolution. The structure quality obtained depends on, and is limited by, the quality of the X-ray mask applied. A critical component of the mask is its absorber patterns. They get fabricated by electroplating into voids of a polymer template. These templates must usually be at least 3 μm deep and exhibit smooth and vertical sidewalls with a lateral resolution of micrometers and possibly below. Primary patterning of the templates is very demanding. Best results are obtained when dedicated electron beam writers with acceleration voltages of 100 kV and above are applied. This, however, limits access to patterning infrastructure and substantially drives delivery timeline and cost, making mask absorber template patterning a bottleneck of the entire process sequence. We propose, evaluate and optimize an alternative absorber patterning approach based on direct laser writing. An ultraviolet laser with 355 nm wavelength and 250 mW beam power by Heidelberg Instruments is applied to expose 2.9 μm thick, chemically amplified, high contrast, negative tone resist mrx-5. Exposure parameters analyzed include the dose and focal settings. Experiments are carried out on bare silicon wafers as well as on chrome-gold and on titanium oxide plating bases. For all cases, results with and without an additional antireflective coating of 200 nm AZ BAR-Li are studied. Aspects of the resist template structure quality analyzed include the sidewall verticality and its smoothness and defects, resist adhesion to the substrate, minimum feature size and structure accuracy, as well as irregularities due to stitching of partial layouts. In an optimized process, a dose of 14 mW on oxidized titanium and BAR-Li was used. We were able to demonstrate 1.5 μm minimum feature size of isolated structures and structural details of about 1 μm. The sidewalls are vertical and exhibit a roughness of dozens of nanometers. When an antireflective coating is used, chamfers are observed at the resist bottom. The structure accuracy occasionally deviates from the original layout by 200–300 nm, particularly at stitching singularities or towards the end of resist walls. The described absorber template patterning process delivers a resolution that much extends beyond previous UV patterning approaches. The structure accuracy, however, is inferior to electron beam written samples. Given the cost and timeline benefit, results of the study will allow users to identify which primary patterning approach is best suited for their micro devices.

     

Fabrication of ceramic microcomponents using deep X-ray lithography

In the last years the fabrication of micro components made from ceramic materials became more and more evident with respect to the pronounced chemical stability and the outstanding thermomechanical properties in comparison to plastics and metals. The aim of this work is the lithographic generation of ceramic microstructures avoiding an intermediate molding step using SU8 as pronounced sensitive resist matrix filled with fine ceramic powder in the submicron range. Focus of the research was to investigate the composite formation, patterning by x-ray lithography, developing, debinding and sintering to form stable ceramic parts. The addition of fine ceramic particles to low viscous liquids like SU8-10 leads to an increase of the viscosity. For a successful debinding and sintering a volume content of at least 40% ceramic is required resulting in a change of the viscosity from around 2 Pas up to a value of 1000 Pas at 25 °C and low shear rates. A modified casting procedure was developed for the formation of uniform resist films with a thickness around 300 m. Optimized exposure and development parameters allow the fabrication of good quality resist structures that can be further transformed into ceramic structures by sintering. Details of the work and results will be presented and discussed in this paper.At this point the authors would like to thank all people who supported this work.     

Fabrication of micro pore optics with smooth sidewall using X-ray lithography

Micro pore optics (MPO) as an X-ray imaging system is perfectly suited for the applications in space telescopes due to its light-weight and high-resolution properties. We report the fabrication of MPO samples by LIGA process focusing on its sidewall surface used as mirrors for X-ray reflection. An intermediate mask is fabricated and used to obtain the working mask in order to avoid the UV exposure to a very thick photo resist layer. Around 400 μm-thick nickel MPO plate is obtained with the aspect ratio of the square pore and sidewall of 8 and 32, respectively. The root mean square roughness of the sidewall surface is below 10 nm in a 5 × 5 μm² region. Some striations are found on the sidewall surface originating from the jagged edge of the chromium coating on the UV mask.     

Fabrication of HARM structures by deep-X-ray lithography using graphite mask technology

The cost-effective fabrication process for high-aspect-ratio microstructures using X-rays depends largely on the availability and quality of X-ray masks. The fabrication of X-ray masks using commercially available graphite sheet stock, as a mask membrane is one approach that is designed to reduce cost and turnaround time. Rigid graphite offers unique properties, such as moderate X-ray transmission, fairly low cost, electrical conductivity, and the ability to be used with either subtractive or additive processes [1, 2]. This paper will demonstrate the potential of a cost-effective, rapid prototyping of high-aspect-ratio microstructures (HARMs) using graphite masks. The graphite wafer accommodates both the intermediate mask and the working mask. In order to allow a direct comparison of the graphite mask quality with other X-ray masks, the primary pattern was derived from a Ti X-ray mask using soft X-ray lithography (XRL). Received: 7 July 1999 / Accepted: 29 September 1999     

Moving mask deep X-ray lithography system with multi stage for 3-D microfabrication

 Based on a moving mask deep X-ray lithography concept, a new deep X-ray exposure system with multi stage has been built up, which can fabricate 3 dimensional microstructures with controllable free shaped wall such as inclined, curved and vertical wall. The system has 6 stages, an X-stage and a Y-stage for substrate scanning, a substrate tilt stage and a substrate rotation stage for controlling an incident X-ray angle to a substrate, an X–Y stage for mask movement and X–Y stage for substrate and mask alignment. The system performance has been confirmed by fabricating microstructures such as gratings, micro grid and micro prism. Received: 10 August 2001/Accepted: 24 September 2001     

Fabrication of high precision X-ray mask for X-ray grating of X-ray Talbot interferometer

X-ray imaging is used in many applications such as medical diagnosis and non-destructive inspection, and has become an essential technologies in these areas. In one image technique, X-ray phase information is obtained using X-ray Talbot interferometer, for which X-ray diffraction gratings are required; however, the manufacture of fine, highly accurate, and high aspect ratio gratings is very difficult. X-ray lithography could be used to fabricate structures with high precision since it uses highly directive syncrotron radiation. Therefore, we decided to fabricate X-ray gratings using X-ray lithography technique. The accuracy of the fabricated structure depends largely on the accuracy of the X-ray mask used. In our research, we combined deep silicon dry etching technology with ultraviolet lithography in order to fabricate untapered and high precision X-ray masks containing rectangular patterns. We succeeded in fabricating an X-ray mask with a pitch of 5.3 μm. The thickness of the Au absorber was about 5 μm, and the effective area was 60  × 60 mm², which is a sufficient size for phase tomography imaging. We demonstrated the utility of the Si dry etching process for making high precision X-ray masks.     

Influence of mask substrate materials on resist sidewall roughness in deep X-ray lithography

Absorption of X-rays in deep X-ray lithography masks can significantly increase exposure time, harden the X-ray spectrum and lead to heating and distortion of the mask. To reduce the impact of such absorption, we have evaluated low atomic mass (low-z) materials that allow the utilization of thick substrates (>100 μm) for reliable mask fabrication. Various forms of graphite, vitreous carbon (VC), boron nitride and beryllium were chosen for testing. Transmission tests were conducted to evaluate resulting surface roughness in the X-ray resist sidewalls. We found that VC, beryllium and pyrolytic graphite all have minimal effect on the resist sidewall surface roughness; however, graphite and boron nitride both significantly increase the roughness to about 300 nm RMS. We could show that this increase in surface roughness is directly related to the crystal structure of these materials. From the tests conducted, VC proves a promising mask substrate, superior to the more expensive and hazardous beryllium that is commonly used for thick high precision masks. VC has been successfully employed as a mask substrate and corresponding resist structures are introduced.     

Fabrication of micro-trench structures with high aspect ratio based on DRIE process for MEMS device applications

The micro-trench structures with high aspect ratio based on the single crystal silicon substrate are fabricated via the deep reactive ion etching (DRIE) process at different etching patterns. The relationship between the micro-trench structures and the DRIE etching patterns is investigated by simulating and processing. The micro-trench structures are obtained to meet the requirements of some MEMS devices for special applications. The profile roughness and micro-trench structures are observed by the atomic force-microscope and the field emission scanning electron microscopy. The verticality (V) of micro-trench structures is average 0.19 in the oxygen environment. The micro-trench structures exhibit better verticality, less roughness and better stability than that of no oxygen. The scalloping effects gradually decreased and the profile becomes more and more polished.     

一种新型MEMS微驱动器的设计与仿真分析

提出并设计了具有双稳态功能的新型电磁型MEMS微驱动器结构形式。微驱动器由导磁的两端固支的扭梁、两端可自由摆动的悬臂梁,以及永磁体、下磁路和平面线圈组成。永磁体的使用,实现了器件的双稳态功能,从而可以得到低功耗的磁驱动器。通电线圈用来实现器件的姿态转换。对设计的器件进行了电磁仿真分析,验证了器件的双稳态机制,分析表明:铁芯的存在对器件功能有决定性的影响。