共查询到20条相似文献,搜索用时 156 毫秒
1.
直接甲醇燃料电池性能研究 总被引:4,自引:4,他引:4
研究了聚合物电解质膜直接甲醇燃料电池性能。 2 0 %Pt -10 %Ru/C和 2 0 %Pt/C分别作为甲醇氧化和氧还原催化剂。通过改变甲醇阳极催化层中Nafion与PTFE的含量研究了电池的电流 -电压特性。结果表明 ,催化层中Nafion含量的影响对电池性能至关重要 ,而PTFE的影响则较小。研究得出催化层中Nafion的最佳含量为 7%。通过在电极表面刷一层Nafion溶液 ,明显提高了电池性能。在低Pt载量条件下 ,即阳极Pt含量 0 .6mg/cm2 ,阴极Pt含量 1.1mg/cm2 ,阴极空气近大气压条件下 ,t =60℃ ,甲醇浓度 1mol/L时 ,单电池开路电压为 0 .6V左右 ,0 .4V时电流密度为 3 0mA/cm2 ,0 .2V时电流密度为 10 6mA/cm2 。甲醇阳极催化层表面的扫描电镜 (SEM )观察表明催化层中Nafion含量不同 ,电极结构不同。 相似文献
2.
3.
Na~+对PEMFC Pt/C气体扩散电极的影响 总被引:1,自引:1,他引:0
采用燃料电池半电池体系模拟了质子交换膜燃料电池(PEMFC)中Na+污染气体扩散电极时的工况,研究了Na+对PEMFC常用的Pt/C气体扩散电极性能的影响.通过循环伏安曲线和电化学阻抗谱,测试了电极在Na+污染前后催化层电化学比表面积(ECA)和电极反应界面上的电荷转移电阻发生的变化.实验结果表明,随Na+污染浓度的增大,电极性能逐渐下降;污染后电极催化层电化学活性比表面积出现明显减少,当污染物浓度为10 000X 10-6时,ECA降低了43%;外加相同电位时,随Na+污染的增加,电极反应界面上的电荷转移电阻逐渐增大.Na+的存在对Pt/C气体扩散电极具有明显毒化作用. 相似文献
4.
质子交换膜燃料电池的初步研究 总被引:8,自引:1,他引:7
组装了质子交换膜燃料电池 (PEMFC)单体并研究了其性能。由于氧电极的性能好坏是质子交换膜燃料电池放电性能好坏的关键 ,因此在电池氢电极侧用部分氢电极作为内氢参比电极 ,可以方便地作出氧电极的极化曲线并对其性能进行评价。考察了催化剂载体、膜电极组件 (MEA)的结构和运行条件对氧电极性能的影响并使用非线性最小二乘法拟合了电池参数。实验表明 :电池的最佳运行温度为 80℃ ,压力为氧气压力 0 .3MPa ,氢电极为 0 .3MPa ,催化层的PTFE最佳含量为 35 % ,Nafion含量为 1mg/cm2 ,Pt含量可以降至为 0 .5mg/cm2 。 相似文献
5.
6.
质子交换膜燃料电池膜电极组件研究 总被引:3,自引:1,他引:3
膜电极组件(MEA)是质子交换膜燃料电池的核心部件。系统地研究了MEA的组成和结构对其性能的影响。研究提出:催化层中掺杂Nafion聚合物的亲水电极比传统的催化层中掺杂PTFE的疏水电极性能有了较大的提高;不同种类质子交换膜对MEA的性能影响很大,Nafion112和Dow膜是目前比较适宜的质子交换膜;采用石墨类碳纸的电极性能高于采用碳纤维类碳纸的电极;电极催化层中Nafion聚合物的最佳含量比为30%左右。根据氢电极和氧电极反应难度的不同,提出为了减少催化剂的用量同时不显著影响电池的性能,氢电极的铂载量应该低于电极的观点,并通过了实验验证。 相似文献
7.
质子交换膜燃料电池阴极数学模型 总被引:11,自引:2,他引:9
Stefan-Maxwell方程用于氧在扩散层内传递;稳态连续方程和Fick 第一定律分别用于氧在催化层内气体通道和电解质膜中传递,采用一维宏观均匀模型,建立了质子交换膜燃料电池氧电极的数学模型。给出了反应速度和氧气浓度在催化层内分布,并分析了各种参数对氧电极性能的影响。结果表明:(1)当催化层内气相孔隙率为0.01以上,则氧在催化层内浓度分布就趋于均匀;(2)催化层厚度为25 μm 左右最佳,过厚影响传质,过薄不能提供足够的反应界面;(3)提高催化层内质子电导和催化剂的有效表面积将极大地提高电极性能;(4)低电流密度时,反应在催化层内分布均匀;高电流密度时,反应集中在催化层靠近扩散层一则。 相似文献
8.
9.
10.
氧电极是固体聚合物电解质(SPE)水电解池(WE)的控制电极,其中扩散层、催化剂的性能将直接影响电解池性能的高低。采用热分解、酸浸蚀、电沉积方法,对钛氧电极扩散层基体进行表面改性研究;探讨了氧电极催化剂对WE极化性能的影响;同时考察了温度、氧电极扩散层对WE性能的影响。结果表明:电沉积法处理钛氧电极扩散层可以使电阻降低,并且在大气中搁置电阻也不会增加;IrO2-RuO2氧电极复合催化剂具有最佳的催化活性;随着电解温度升高,电解电压下降;以电沉积法处理的钛网为氧电极扩散层时,WE性能得到明显提高,在常压、70℃条件下,电解电压为1.65V时,电流密度大于1A/cm2。 相似文献
11.
12.
13.
《Integrated ferroelectrics》2013,141(1):741-746
NiCr alloys prepared by dc magnetron sputtering are considered to apply simultaneously both the absorption layer and the top electrode on PZT thin films for infrared sensors. NiCr alloys deposited with dc powers of Ni 80 and Cr 50 W showed the most stable oxidation resistance even at 600°C in an oxygen ambient. They have a resistivity of approximately 70 μΩ-cm and a rms roughness of 2.0 nm in samples annealed at 600°C for 5 min in O2. The NiCr/PZT/Pt capacitors showed a well-saturated hysteresis loop having a remanent polarization of 20 μC/cm2. Ultra-thin NiCr alloys showed a possibility as a top electrode for infrared sensors. 相似文献
14.
Abstract Two types of potential bottom electrode structures for integration of ferroelectric materials in DRAM technology have been investigated: one based on iridium, the other based on platinum alloyed with oxygen gettering elements, such as B and Ti. The electrode structures, deposited on Si substrates, have been annealed in oxygen at 650°C for 30 min and characterized by RBS and AES. It was found that alloying the Pt with 3% of alloying elements had no beneficial effect and did not improve the properties of Pt as a barrier to oxygen diffusion. At the investigated annealing conditions, oxygen diffuses through Pt or its alloys and oxidizes the underlaying material. On the other hand, a thickness of 1100 Å of Ir was found to provide a barrier to oxygen diffusion under the same conditions. A layer of Ta in contact with Pt or Ir was found to deteriorate the barrier properties of both metals at the investigated annealing conditions. 相似文献
15.
Won Woong Jung Si Kyung Choi Soon Yong Kweon Seung Jin Yeom 《Journal of Electroceramics》2004,13(1-3):55-63
The ferroelectric material SrBi2Ta2O9 (SBT) has been extensively investigated in connection with integrating nonvolatile ferroelectric random-access memory (FeRAM). The SBT layer must be annealed in an oxygen atmosphere after deposition to crystallize the ferroelectric oxide film, which induces Pt hillock formation in a Pt/Ti electrode stack. The Pt hillock in a Pt/Ti electrode stack has been the main concern in SBT FeRAM due to reliability problems, such as capacitor shorts. Reportedly, the compressive stress generated in thin film is widely accepted as being responsible for the occurrence of hillocks in thin film and the main mass transport mechanism for hillock formation is the grain boundary diffusion for thin film with a columnar structure. In this study, three factors are considered in the total compressive stress generated during both deposition and post-annealing in Pt/Ti electrode stack: intrinsic stress, thermal stress, and extrinsic stress. Moreover, we found that an orientation relationship of Pt (100)hillock//Pt (111)thin film existed between the Pt hillock and the thin film. The Pt hillock was a single crystal, having facets with polyatomic steps. From these results, we suggest that the Pt hillock growth mechanism is the layer growth of flat faces, which shapes the hillock into a tetrahedron single crystal. 相似文献
16.
In this paper we investigated the thermal stability of a novel CrTiN/TiN double barrier, compared to those of TiN and CrTiN single layer barriers. The CrTiN/TiN double layer was stable against heat treatments at higher than 700°C in oxygen ambient for 30 min. However, the double layer showed a severe Pt and Cr interdiffusion issue after crystallization annealing for PZT. We found that pre-annealing treatments prior to deposition of Pt significantly reduced the interdiffusion. In addition, we also demonstrated ferroelectric characteristics of PZT capacitors on top of Pt/CrTiN/TiO2/Si bottom electrode system for ultra-high density memory applications. 相似文献
17.
The oxygen electrode reaction at the interface gold∣yttria stabilized zirconia was investigate using microelectrodes by chronoamperometry
and electrochemical impedance spectroscopy, with emphasis put on effect of prolonged polarization of the electrode. Two interesting
phenomena were observed: (a) generally, the long-lasting negative polarization resulted in a slow monotonous decrease of the
current flowing through the electrode, (b) the reaction mechanism was less complicated for the polarized then unpolarized
electrodes, which resulted in a relatively simply equivalent circuit used for modelling the former ones. On the basis of the
data obtained, the apparent exchange currents normalized vs. the three phase boundary length and Tafel slopes were determined.
The methods of determining the three phase boundary length were discussed. The reconnaissance data obtained for the Pt microelectrode
are also reported. 相似文献
18.
Koji Watanabe Masahiro Tanaka Nicolas Nagel Kenji Katori Masataka Sugiyama Hisayoshi Yamoto 《Integrated ferroelectrics》2013,141(1-4):451-460
Abstract Using the Rapid Thermal Annealing (RTA) process, a technique has been established to obtain SrBi2Ta2O9 (SBT) films which showed well-shaped hysteresis curves without a postannealing process after top electrode deposition, maintaining high remanent polarization (Pr) values. RTA conditions were optimized for nucleation of SBT. The effect of a seed layer on the film properties became obvious. This process allowed top electrode materials other than Pt. High remanent polarization (Pr) values could be also obtained with Pd top electrodes. 相似文献
19.