新型（Y，Gd）（BO3，VO4）：Eu荧光粉的合成及发光性能研究

采用草酸根沉淀稀土粒子使其充分混合进行前处理，用固相反应合成了硼钒酸钇钆铕稀土荧光红粉。对试样进行了X射线衍射、光致激发和发射光谱表征。产物与（Y，Gd）VO4：Eu相比，掺入了与钒等摩尔量的硼，硼的掺入提高了发光强度，但没有改变钒酸盐的四方晶系结构。分析了不同浓度Gd^3＋掺杂对试样发光强度的影响以及基质离子VO4^3-和BO3^3-对激活剂Eu^3＋的能量传递机理。同时将产物与（Y，Gd）VO4：Eu和（Y，Gd）BO3：Eu的发光性能进行对比，发现（Y，Gd）-（BO3，VO4）：Eu具有更好的发光强度和色纯度，有望在工业上作为一种优良的新型灯用或PDP显示器用荧光粉。所用方法与传统固相法相比，反应温度降低了100℃，所得试样易粉碎、粒度细，发光强度提高10％以上。     

Y2-x-yGdxEuyO3纳米材料制备过程中的固溶行为及其发光性能术

用柠檬酸螯合法制备Y2-x-yGdxEuyO3纳米粉体（x＋y≤2）,通过FTIR,XRD和SEM分析了制备过程中的物相变化以及pH值对粉体形貌的影响．测试了Y2-x-yGdxEuyO3晶格常数和晶胞体积,分析了Gd与Eu在Y2O3中的固溶行为及其发光性能．结果表明：在pH〈3的体系中制备Y2-x-yGdxEuyO3粉体较为适合,经900℃煅烧2h可完全合成出立方相的Y2-x-yGdxEuyO3;在pH=1时,加入少量乙二醇（5％,体积分数）时得到粉体形貌最佳,粒径约90nm,近球形．样品的发光性能和Y,Gd的配比以及Eu的含量有关,当化学配比为Y0.2Gd1.65Eu0.15O3时样品发光强度最高,y值超过0．15会发生浓度猝灭,导致发光强度降低．     

稀土离子RE(RE=Pr,Nd,Eu)在Sr_2CeO_4基质中的发光性质

通过燃烧法合成了Sr2CeO4∶RE材料,研究了Sr2CeO4材料的结晶过程和发光性质及Pr3+,Nd3+和Eu3+稀土离子在Sr2CeO4基质中的发光性能。实验通过燃烧法制得的前驱体在1200℃焙烧2h可得均一的Sr2CeO4相,较传统方法的合成时间大为降低。稀土离子Pr3+,Nd3+和Eu3+的在基质中的少量掺杂(0.02%)均可使Sr2CeO4在475nm左右的特征发射谱峰明显变宽增强,且Eu3+离子的掺杂可使材料在510nm,540nm,610nm左右产生多个明显的稀土离子的特征发射峰。实验合成的发光材料具有良好的发光性能,证明Sr2CeO4材料可作为一种优良的发光材料的基质使用,为寻找新型的发光材料提供了一条新的途径。     

稀土离子RE(RE=Pr,Nb,Eu)在Sr2CeO4基质中的发光性质

通过燃烧法合成了Sr2CeO4：RE材料，研究了Sr2CeO4材料的结晶过程和发光性质及Pr^3＋,Nd^3＋和Eu^3＋稀土离子在Sr2CeO4基质中的发光性能。实验通过燃烧法制得的前驱体在1200℃焙烧2h可得均一的Sr2CeO4相,较传统方法的合成时间大为降低。稀土离子Pr^3＋，Nd^3＋和Eu^3＋的在基质中的少量掺杂（0．02％）均可使Sr2CeO4在475nm左右的特征发射谱峰明显变宽增强，且Eu^3＋离子的掺杂可使材料在510nm,540nm,610nm左右产生多个明显的稀土离子的特征发射峰。实验合成的发光材料具有良好的发光性能，证明Sr2CeO4材料可作为一种优良的发光材料的基质使用，为寻找新型的发光材料提供了一条新的途径。     

CaLaAl3O7：Eu^3＋的发光特性研究

采用硝酸盐热分解法合成了CaLa1-xAl3O7：xEu^3＋（0≤x≤1）粉末样品，研究了其在紫外和真空紫外激发下的发光特性及Eu^3＋掺杂量对CaLa1-xAl3O7：xEu^3＋发光强度的影响。XRD分析结果表明，当0≤x≤1时体系都能形成很好的单相。在254nm紫外（UV）激发下，其发射光谱由位于550nm～710nm几条锐线发射峰组成，以616nm处发射为主，当x=0．2时发射强度最高。在147nm真空紫外,（VUV）激发下，CaLa1-xAl3O7：xEu^3＋的发射光谱峰形与254nm（UV）激发下一致，当x=0．2时发射强度最高，但是强度较254nm（UV）激发下弱，表明UV和VUV激发下荧光体的发光机理不同。     

Ca-α-SiAION：Eu^2＋荧光发光材料的合成与发光性能

以α-Si3N4,AIN,CaCO3,Eu2O3为原料,采用固相烧结法获得了组成为CaxEuySi12-（3x＋4．5y）Al3x＋4.5yOx＋1．5yN16-（x＋1.5y）（x=0．220～1．525,y=0．02～0．15）的荧光发光材料。应用X射线衍射（XRD）仪,扫描电子显微镜（SEM）,紫外．可见分光光度计和荧光分光光度计,研究了不同组成及烧结工艺对Ca-α-SiAION：Eu^2＋外的制备,Eu^2＋掺杂和荧光发射的影响。在所研究的组成范围,可以获得单相、Eu^2＋掺杂的Ca-α-SiAION：Eu^2＋陶瓷粉体。提高烧结温度可以进一步改善Eu^2＋离子的分布均匀性。Ca-α-SiAION：Eu^2＋在紫外-可见光部分具有强烈的吸收,其激发光谱的峰值波长为～270nm、400nm,发射光谱的峰值波长为～570nm。采用氢气,氮气混合气氛烧结合成的Ca-α-SiAION：Eu^2＋的发光强度要高于氮气气氛烧结合成的样品。     

白光LED用新型Eu或Gd共掺杂的Ce:YAG单晶荧光材料的光谱性能研究

开展了白光LED用新型YAG单晶荧光材料的制备和光谱性能研究,采用提拉法生长Eu,Ce:YAG及Gd,Ce:YAG晶体,并通过吸收光谱,激发、发射光谱及电光性能等对晶体材料的光谱特性进行表征。结果表明,Eu或Gd共掺杂的Ce:YAG单晶荧光材料均可以被波长460nm左右的蓝光芯片有效激发,产生一个范围为480～650nm的宽峰发射。Eu3+或Gd3+共掺杂会对Ce3+离子的发光产生影响:Eu3+离子的掺杂,会对Ce3+离子的发光产生淬灭效应;而Gd3+离子取代基质Y3+离子可以使Ce3+离子的发射峰发生红移。     

Gd1-xAlyOz:Eux梯度组合芯片的组织结构和发光性能

将组合材料芯片技术用于Gd1-xAlyOz:Eux荧光材料的研究。通过离子束溅射沉积和两步热处理技术制备Gd1-xAlyOz:Eux梯度组合材料芯片。通过X射线衍射和扫描电镜二次电子像分析发现：根据钆铝配比的不同在组合材料芯片上形成了相应的钆铝酸盐晶相;Gd4Al2O9(GAM)和GdAlO3(GAP)作为Gd2O3-Al2O3中的稳定晶体相,其单相多晶薄膜较容易形成。紫外激发发光照相记录表明Gd1-xAlyOz:Eux可以发射明亮的红色荧光 (Eu3+ 的5D0–7F2发射,主峰值615 nm）,且对于Eu3+掺杂,GAP是最好的钆铝酸盐基体相。材料芯片的照相筛选结果和发射光谱、吸收光谱的分析结果一致。     

CaS：Eu，Sm的微波合成与发光性能研究

采用微波合成法快速合成了红外光激励发光材料CaS：Eu，Sm。研究了输出功率对样品发光性能的影响，Eu，Sm双掺杂离子的不同掺杂浓度对发光性能的影响（确定了最佳掺杂浓度），不同助熔剂对发光性能的影响。XRD测试结果表明，CaS：Eu，Sm样品为面心立方结构；SEM照片显示样品粒径在400～500nm范围内；光谱分析表明，样品的红外光激励发光响应范围位于800-1600nm，上转换发光峰值位于655nm，对应于Eu^2＋离子4f^65d→4f^7（^8S7/2）跃迁。     

M3Gd（PO4）3：Tm^3＋（M=Mg，Ca，Sr，Ba）真空紫外发光特性

研究了M3Gd（PO4）3：Tm^3＋（M=Mg，Ca，Sr，Ba）样品的结构特性、发光特性。M3Gd（PO4）3：Tm^3＋属于立方晶系。基质掺入铥离子后其结构没有明显变化。M3Gd（PO4）3：Tm^3＋在166nm和210nm附近有强烈的吸收峰。位于166nm附近的强烈吸收峰归因于基质的强烈吸收，210nm附近的吸收峰则归因于Gd^3＋的^8S7/2-^6GJ的能级跃迁。在166nm真空紫外光激发下，样品在453nm及363nm处有较强的发射峰，发射主峰位于453nm。随着样品中阳离子的变化，M3Gd（PO4）3：Tm^3＋的激发峰发生强烈变化，从而导致其发射光谱有了较大变化。     

三自由度并联机构（3SPS 3SRR）的位置分析

针对一种3SPS-3SRR并联机构,运用符号法对该机构进行位置分析建模及求解。构建动、静坐标系,通过矩阵转换对机构建立约束方程,运用Sylvester消元方法进行消元得到机构单变元输入输出方程,求得机构位姿的封闭解。最后进行实例求解,得到该机构处于一般姿态的32组实数解,并使机构处于特殊位姿,将所得封闭解与预估解对比,从而验证该位置求解模型的正确性。基于符号法的3SPS-3SRR并联机构位置分析模型具有准确、高效的特点,规避了基于数值法的诸多缺点,对该机构的深入分析具有重要理论意义及实用价值。     

GdF_3:Ce~(3+),Ln~(3+)(Ln~(3+)=Eu~(3+),Tb~(3+),Dy~(3+),Sm~(3+))纳米晶体的制备与发光性能研究

应用共沉淀法,制备共掺同一敏化剂(Ce3+)和不同激活剂(Tb3+,Eu3+,Sm3+,Dy3+)的GdF3纳米晶体。在单一波长(254nm)紫外光的激发下,掺杂不同镧系激活离子的样品能够发射出不同颜色的明亮可见发光,因而适用于多色生物标记。     

Phase diagrams of binary systems: AgNO3KNO3 and AgNO3 -@#@ NaNO3

AgNO₃-KNO₃ and AgNO₃-NaNO₃ phase diagrams were drawn using a simultaneous thermal analysis technique in the range 373 to 623 K. The apparatus is described briefly. Figure 1 shows a continuous solid solution in equilibrium with the liquid phase. It exhibits a eutectoid mixture (20 mol% NaNO₃) at 380.7 K. Figure 2 shows a eutectic mixture (45 mol % KNO₃) at 413 K, a eutectoid mixture (20 mol % KNO₃) at 409 K, and a continuous invariant at 404 K.     

Thermodynamic analysis of the CsNO3-KNO3-NaNo3 system

The thermodynamic properties of the CsNO₃-KNO₃-NaNO₃ system have been derived from an optimization procedure using experimental and published information concerning phase diagram and thermodynamic data for the constituent binary systems and ternary liquid phase. The results are in very close agreement with the experimental data.     

3-D or not 3-D

When developing mathematical models of physical phenomena, physical scientists have been limited to two-dimensional solutions. In some cases, those solutions may be qualitatively correct, but in many others, the solutions are far from reality. This paper presents three examples of the limitations of two-dimensional modeling :diffusion-limited electrolytic reduction of a liquidproduct from a liquid electrolyte, morphological development of a solid dendrite, and behavior of a two-phase fluid under shear.     

BiFeO3-BaTiO3-LaFeO3三元多铁性陶瓷材料的制备及性能

采用固相法制备了1-x(0.71BiFeO3-0.29B aTiO3)-xLaFeO3 (x=0.0,0.1,0 2,0 3,0 4,0.5)三元多铁性陶瓷材料,并研究了LaFeO3含量对陶瓷物相结构、微观组织、电学性能和磁电耦合性能的影响。结果显示,所有陶瓷均为单一钙钛矿结构,但随LaFeO3含量的增加,伴随着结构相变。所得陶瓷晶粒尺寸均匀,表现出良好的微观形貌,陶瓷晶粒随LaFeO3含量的增加而明显变小。虽然LaFeO3的加入在一定程度上降低了陶瓷的介电常数,但分析发现,x=0.1时能降低陶瓷的漏导,其漏电流达到了最小值,在10-7~10-8 A/cm2数量级,并且该陶瓷的剩余极化强度Pr和磁电耦合系数αME均达到最大值,分别为0.45μC/cm2和132.21 mV/cm·Oe (120 kHz)。因此,与0.71BiFeO3-0.29BaTiO3陶瓷相比,添加少量LaFeO3可以在一定程度上增加陶瓷的铁电性和磁电耦合性能。     

3

In this paper, a planning algorithm for multi-path/multi-layer circular locus is poposed. The algorithm is applied to weld the nipples on the header of boiler. Multi-path/multi-layer circular locus is planned according to three teaching points, which is lapped head-on-end to satisfy the requirement of technology. For the nipples wherever they are arranged radially or axially, even if there are errors caused by positioning and thermal deformations, providing that nipple's position and orientation relative to the teaching one can be measured, the multi-path/multi-layer circular locus can be planned without teaching any more. The algorithm has been applied in welding robot for manufacturing power station' boiler.     

Electronic structures of semiconducting FeGa3, RuGa3, OsGa3, and RuIn3 with the CoGa3- or the FeGa3-type structure

Electronic structure of FeGa₃, RuGa₃, OsGa₃ and RuIn₃ with the crystal structures belonging to the space group of P4n2 (No. 118), which is usually referred to as the CoGa₃-type structure, and P4₂/mnm (No. 136), which is usually referred to as the FeGa₃-type structure, have been calculated using a first-principle pseudopotential method based on the density-functional theory within the local density approximation (LDA) with the generalized gradient correction. All of them have the similar band structure in that the valence band maximum occurs at or near A and the conduction band minimum occurs at a point between Z and Γ. From the total energies calculated, compounds with the FeGa₃-type structures are more stable than those with the CoGa₃-type structures. The band gaps of FeGa₃, RuGa₃, OsGa₃ and RuIn₃ with the FeGa₃-type structure are about 0.50, 0.26, 0.68, and 0.30 eV, respectively, which are wider than those with the CoGa₃-type structure. Calculated band gaps are wider than the observed gaps, which is unusual in the LDA calculation.     

Features of feathery γ structure in a near-γ TiAl alloy

This work characterizes the feathery-like structures produced in a Ti–46.8Al–1.7Cr–1.8Nb (at.%) alloy during rapid continuous cooling from the α domain. Their morphology and crystallography are described using different microscopy and orientation mapping techniques. These feathery-like structures are divided into many small domains, characterized by low-angle misorientations (rotated less than 15°) between the domains. The domains comprise multiple parallel γ lamellae and rare traces of α₂. These lamellae follow the Blackburn orientation relationship and have a {1 1 1}_γ habit plane. Two types of γ-feathery structures were identified according to their location and crystallography. The grain-boundary γ-feathery structures originate from lamellar structures that grow into a neighboring grain. Alternatively, the internal γ-feathery structures are located in the interior of prior α grains and show an average misorientation of 36° around one $〈100{〉}_{{\mathrm{\gamma }}_{\text{L}}}$ axis of the lamellar structure in which it is embedded. This paper describes these two γ-feathery structures in detail and discusses their development in light of the mechanisms available in the literature, particularly sympathetic nucleation.     

PMN-PNN-PT单晶的固相法生长研究

采用两步法和埋入PMN-PT单晶为模板的等离子放电烧结（SPS）技术制备出了致密的单一钙钛矿相的PMN-PNN-PT陶瓷，随后在1200℃下退火100h来诱导晶体的生长。实验结果表明，PMN-PNN-PT单晶〈111〉方向的生长速度明显快于〈001〉方向，而〈111〉方向生长的晶体形状为V字形，这是由钙钛矿结构的生长机理决定的，钙钛矿结构晶体的生长是通过〈001〉方向的层状生长来实现的。