Boundary Conditions for Thermoelectric Cooling in <Emphasis Type="Italic">p</Emphasis>–<Emphasis Type="Italic">n</Emphasis> Junction

The article is devoted to analysis of the boundary conditions for the Peltier effect in semiconductors containing potential barriers (p–n junction). The full system of boundary conditions, taking into consideration the presence of nonequilibrium charge carriers, is offered. The surface recombination of charge carriers is taken into account for both the electric current and the propagation of heat.     

Subnanosecond impact-ionization switching of silicon structures without <Emphasis Type="Italic">p</Emphasis>–<Emphasis Type="Italic">n</Emphasis> junctions

It is shown that an application of a fast-rising high-voltage pulse to an n ⁺–n–n ⁺ silicon structure leads to subnanosecond avalanche breakdown, generation of electron–hole plasma throughout the entire structure, and structure switching to the conducting state in a time of about 100 ps. The predicted effect is similar to the delayed avalanche breakdown of reverse-biased p ⁺–n–n ⁺ diode structures; however, it is implemented in a structure without p–n junctions.     

Raman spectroscopy determination of carrier concentration in <Emphasis Type="Italic">n</Emphasis>-In<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Ga<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>As epitaxial films

We have studied in detail the coupled phonon-plasmon mode Raman spectra of n-In _x Ga_{1 − x} As with n in the range 10¹⁷ to 10¹⁹ cm⁻³. The results indicate that the behavior of the high-frequency mode L ₊ can be described in terms of coupled modes in the Drude approximation. The proposed theory and experimental data are used to estimate the carrier concentration in the solid solution and its composition.     

Superconductor-Insulator Transition in Composite Granular (1−<Emphasis Type="Italic">n</Emphasis>)Gd123-<Emphasis Type="Italic">n</Emphasis>Pr123 and (1−<Emphasis Type="Italic">m</Emphasis>)Gd123-<Emphasis Type="Italic">m</Emphasis>PrBa123

Granular composite samples of GdBa₂Cu₃O_7– (Gd123), PrBa₂Cu₃O_7– (Pr123), and Pr_0.5Ba_0.5Ba₂Cu₃O_7– (PrBa123) have been prepared by the solid state reaction technique. The characterization of samples has been done by SEM and XRD measurements. We have investigated the effect of Pr123 and PrBa123 insulating grains on the superconductor-insulator transition and the normal state resistivity of the (1–n)Gd123-nPr123 and (1–m)Gd123-mPrBa123 systems. The dominant diffusion of Pr ions onto the neighboring Gd123 grains in (1–n)Gd123-nPr123 causes high rate of suppression of superconductivity similar to the chemical-doped GdPr123 system. For (1–m)Gd123-mPrBa123 system, the suppression rate is slower and we have superconducting sample with T_c^mid = 41 K for the second phase of m = 0.6 sample. Comparison of the superconductor-insulator and metal-insulator transitions in the granular samples and the chemical substituted GdPr123 indicates optimization of the superconducting state in (1–n)Gd123-mPrBa123 relative to (1–n)Gd123-nPr123 and GdPr123 systems. The more stable characteristic of PrBa123 relative to Pr123, when they are mixed with Gd123 grains, makes PrBa123 more suitable for any superconductor-insulator application. The mechanism of suppression of superconducting state for Pr123 has been discussed by comparison of experimental results against the hole filling and hole localization models presented for the insulating Pr123.     

Barrier characteristics of Pt/Ru Schottky contacts on <Emphasis Type="Italic">n</Emphasis>-type GaN based on <Emphasis Type="Italic">I–V–T</Emphasis> and <Emphasis Type="Italic">C–V–T</Emphasis> measurements

We have investigated the current–voltage (I–V) and capacitance–voltage (C–V) characteristics of Ru/Pt/n-GaN Schottky diodes in the temperature range 100–420 K. The calculated values of barrier height and ideality factor for the Ru/Pt/n-GaN Schottky diode are 0·73 eV and 1·4 at 420 K, 0·18 eV and 4·2 at 100 K, respectively. The zero-bias barrier height (Φ_b0) calculated from I–V characteristics is found to be increased and the ideality factor (n) decreased with increasing temperature. Such a behaviour of Φ_b0 and n is attributed to Schottky barrier (SB) inhomogeneities by assuming a Gaussian distribution (GD) of barrier heights (BHs) at the metal/semiconductor interface. The current–voltage–temperature (I–V–T) characteristics of the Ru/Pt/n-GaN Schottky diode have shown a double Gaussian distribution having mean barrier heights ( [`(F)]<sub>\textb0</sub> {\bar{{\Phi}}_{\text{b}0}} ) of 1·001 eV and 0·4701 eV and standard deviations (σ <sub>0</sub>) of 0·1491 V and 0·0708 V, respectively. The modified ln (J<sub>0</sub> /T<sup>2</sup> )-( q<sup>2</sup>s <sub>0</sub><sup>2</sup>/2k<sup>2</sup>T<sup>2</sup> ){ln} ({{J}_{0} /{T}^{2}} )-( {{q}^{2}{\sigma} _{0}^{2}/{2}{k}^{2}{T}^{2}} ) vs 10<sup>3</sup>/T plot gives [`(F)]_\textb0 \bar{{\Phi}}_{\text{b}0} and Richardson constant values as 0·99 eV and 0·47 eV, and 27·83 and 10·29 A/cm²K², respectively without using the temperature coefficient of the barrier height. The difference between the apparent barrier heights (BHs) evaluated from the I–V and C–V methods has been attributed to the existence of Schottky barrier height inhomogeneities.     

<Emphasis Type="Italic">T</Emphasis>–<Emphasis Type="Italic">P</Emphasis> Phase Diagram of Nitrogen at High Pressures

By employing a mean field model, calculation of the T–P phase diagram of molecular nitrogen is performed at high pressures up to 200 GPa. Experimental data from the literature are used to fit a quadratic function in T and P, describing the phase line equations which have been derived using the mean field model studied here for N₂, and the fitted parameters are determined. Our model study gives that the observed T–P phase diagram can be described satisfactorily for the first-order transitions between the phases at low as well as high pressures in nitrogen. Some thermodynamic quantities can also be predicted as functions of temperature and pressure from the mean field model studied here and they can be compared with the experimental data.     

Enhanced Superconductivity in Double-Doping Cu<Subscript>0.15</Subscript>TaSe<Subscript>2−<Emphasis Type="Italic">x</Emphasis></Subscript><Emphasis Type="Italic">S</Emphasis><Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>

Superconducting Cu _x TaSe₂(x=0.05, 0.15) and Cu_0.15TaSe_2?x S _x (x=0, 0.5, 1, 1.5) single crystals have been systematically fabricated by a chemical vapor transport method. It is found that the double doping in TaSe₂, i.e., the simultaneous intercalation of Cu and substitution of Se by S, can substantially enhance the superconducting transition temperature. Transport property measurements give evidence of the coexistence and competition of charge density wave state and superconductivity in Cu _x TaSe₂ which provide meaningful information to understand the complex electronic states in this system. The parallel shift and the fan-shape broadening behaviors are observed in the superconducting transition curves under magnetic fields of Cu_0.15TaSeS and TaSeS, respectively, indicating an increase of coherence length and suppression of superconducting fluctuation induced by copper intercalation.     

Superconductivity in a Correlated <Emphasis Type="Italic">E</Emphasis>⊗<Emphasis Type="Italic">e</Emphasis> Jahn–Teller System

By numerically solving the Eliashberg equation in the RPA as well as employing the Landau’s theory for phase transitions, we have investigated superconductivity, especially its pairing character, in a two-orbital Hubbard model coupled with E?e Jahn–Teller phonons on a two-dimensional square lattice at half filling. If the electron hopping between neighboring sites keeps the orbital character invariant in this E?e Jahn–Teller crystal, we find that a new superconducting phase characterized by the pairing of spin singlet, orbital singlet, and odd in momentum space, named a chiral p-wave pairing, is brought about by the collaboration of orbital fluctuations enhanced mainly by the electron–phonon interaction with spin fluctuations induced by the electron–electron one.     

Electrochemical etching of <Emphasis Type="Italic">p–n</Emphasis>-GaN/AlGaN photoelectrodes

Specific features of etching of GaN/AlGaN p–n structures in a KOH-based electrolyte have been studied. It was found that the corrosion process first passes across p layers through vertical channels associated with threading structural defects. Then, the corrosion process occurs in the lateral direction along n layers of the structure, with local hollows and voids thereby formed. The lateral etching is due to the presence of positive piezoelectric charges at boundaries of n-AlGaN and n-GaN layers and positively charged ionized donors in the space-charge region of the p–n junction.     

Thermal conductivity of Er<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Sn<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>Se (<Emphasis Type="Italic">x</Emphasis> ≤ 0.025) solid solutions

The thermal conductivity of Er _x Sn_{1 ? x} Se solid solutions has been measured at temperatures from 80 to 360 K. The results have been used to evaluate the electronic and lattice components of thermal conductivity for elastic carrier scattering, parabolic bands, and arbitrary degeneracy. With increasing erbium content and temperature, both the electronic and lattice components decrease considerably. Long-term annealing increases both components. It follows from the present experimental data that heat conduction in Er _x Sn_{1 ? x} Se is mainly due to phonons and that the observed rise in thermal resistance with Er content is due to phonon-phonon and paramagnetic-ion scattering.     

Homogeneity of high-resistivity <Emphasis Type="Italic">p</Emphasis>-Si<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>Ge<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>〈Au〉 crystals

p-Si_{1 ? x} Ge _x crystals have been diffusion-doped with gold. Gold diffusion in the p-Si_{1 ? x} Ge _x 〈Au〉 samples and their electrical properties have been studied. The results demonstrate that the highest gold concentration in the crystals can be achieved in the temperature range 1000–1050°C. An expression has been derived which indicates that, all other factors being the same, compensation with Au, an amphoteric impurity, insures better homogeneity compared to codoping with acceptor and donor impurities. The hole concentration homogeneity in gold-compensated samples is at the same level as or even better than that in the uncompensated material.     

Extraction of U(VI) and Th(IV) ions from nitric acid solutions with <Emphasis Type="Italic">N</Emphasis>,<Emphasis Type="Italic">N</Emphasis>,<Emphasis Type="Italic">N</Emphasis>′,<Emphasis Type="Italic">N</Emphasis>′-tetra-2-ethylhexylglutaramide

N,N,N′,N′-Tetra-2-ethylhexylglutaramide (TEHGA) was used as a new extractant for the extraction of U(VI) and Th(IV) from nitric acid solutions. Toluene was found to be the most suitable diluent for TEHGA. The extraction of nitric acid was also studied. The influence exerted on the distribution ratio (D) of U(VI) and Th(IV) by the concentrations of HNO₃, TEHGA, and LiNO₃ as salting-out agent, and also by the equilibration time, temperature, and kind of diluent was examined. Good U–Th separation can be achieved using 2–3 M HNO₃. The results obtained show that U(VI) and Th(IV) are mainly extracted as UO₂(NO₃)₂·2TEHGA and Th(NO₃)₄·TEHGA, respectively. The IR spectra of the extracted species were analyzed. The thermodynamic functions of the process were calculated. Back-extraction of U(VI) and Th(IV) from the organic phases was also studied.     

Thermodynamic properties of (TeO<Subscript>2</Subscript>)<Subscript><Emphasis Type="Italic">n</Emphasis></Subscript>(MoO<Subscript>3</Subscript>)<Subscript>1–<Emphasis Type="Italic">n</Emphasis></Subscript> glasses

The thermal behavior of (TeO₂) _n (MoO₃)_1–n (n = 0.75, 0.85, 0.90) tellurite glasses has been studied by differential scanning calorimetry in the range from T = 300 to T = 850 K and heat capacity has been measured in the temperature range. The thermodynamic characteristics of the devitrification process and glassy state have been determined. The experimental data obtained have been used to evaluate the standard thermodynamic functions of the system in glassy and supercooled liquid states: heat capacity C _p °(T), enthalpy H°(T)–H°(320), entropy S°(T)–S°(320), and Gibbs function G°(T)–G°(320) in the temperature range 320–630 K. The composition dependences of the glass transition temperature and thermodynamic functions for the glasses have been obtained. The thermal and thermodynamic properties of the tellurite glasses have been compared to those of previously studied (TeO₂) _n (WO₃)_1–n and (TeO₂) _n (ZnO)_1–n glasses.     

Structural Parameters and Spin Filtering Properties of Ga<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>(<Emphasis Type="Bold">M</Emphasis>)<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>P compound

In this work, we have explored the structural and magnetic properties of GaP-based diluted magnetic semiconductors (DMSs). Based on first-principle density functional theory (DFT) calculations and using a full potential linearized augmented plane wave (FP-LAPW) method in generalized gradient approximation (GGA), some significant structural and magnetic properties of Ga _1?x (M) _x P compound as DMS are investigated. In this compound, M is a transition element such as vanadium (V), manganese (Mn), cobalt (Co), and copper (Cu) with a concentration of X. We have calculated the structural parameters such as the equilibrium lattice constant and bulk modulus of the compound. Furthermore, the spin polarization and magnetic moments are studied. We have found that by increasing the atomic number of the transition element, the lattice constant reduces, except for that of Cu, and compressibility improved in comparison with GaP. Moreover, with X=25 %, the Ga_0.75(M)_0.25P compound becomes more stable by increasing the atomic number of the transition element M. The study of the electronic properties of the compound indicates that the main contribution in total density of states near Fermi level is related to the 3d orbitals of the transition elements and the highest magnetic moment is for Mn-doped GaP.     

Mass spectroscopic measuring of SiCl<Subscript><Emphasis Type="Italic">n</Emphasis></Subscript> (<Emphasis Type="Italic">n</Emphasis> = 0–2) radicals in SiCl<Subscript>4</Subscript> RF glow discharge plasma

The relative densities of SiCl _n (n = 0–2) in SiCl₄ radio frequency (rf) glow discharge plasma are measured by mass spectrometry. The effects of discharge parameters, i.e., rf power, discharge pressure, substrate temperature, and SiCl₄ flow rate on the relative densities of SiCl _n (n = 0–2) are investigated in detail. An optimum configuration of discharge parameters (low rf power, high discharge pressure, low substrate temperature, and low flow rate), which enhanced the formation of SiCl _n (n = 0–2) radicals, is searched by a great deal of measurements and discussions. In the optimum configuration of discharge parameters, we measure the spatial distribution of SiCl _n (n = 0–2) radicals in the most optimized plasma parameters. The experimental results reveal that Si and SiCl may be the dominant precursors in forming the thin film.     

Synthesis of ultrafine fluorite Sr<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>Nd<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>F<Subscript>2 + <Emphasis Type="Italic">x</Emphasis></Subscript> powders

We have identified conditions that ensure the preparation of ultrafine Sr_{1 − x} Nd _x F_{2 + x} powders uniform in phase composition. The powders were characterized by X-ray diffraction and scanning electron microscopy. The powder particles have the form of faceted nano- and microcubes and range in size from 30–100 nm to 0.3–2.5 μm, depending on precipitation conditions.     

The thermovoltaic effect in variband solid solution Si<Subscript>1–<Emphasis Type="Italic">x</Emphasis></Subscript>Ge<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> (0 ≤ <Emphasis Type="Italic">x</Emphasis> ≤ 1)

The thermovoltaic effect in films of variband solid solution Si_1–x Ge _x (0 ≤ x ≤ 1) has been observed for the first time. The samples comprised n-Si–p-Si_1–x Ge _x (0 ≤ x ≤ 1) heterostructures grown by liquid phase epitaxy. An electromotive force within 0.05–0.3 mV and a current of 0.0025–0.0035 μA appeared on heating samples in a temperature range from 40 to 250°C.     

Synthesis and structural properties of AgCl<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>Br<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> (<Emphasis Type="Italic">x</Emphasis> = 0.5–0.8) solid solutions

The properties of AgCl_{1 - x} Br_x ( x = 0.5-0.8) solid solutions prepared by the Bridgman-Stockbarger method are studied using a variety of techniques (x-ray diffraction, microstructural examination, chemical analysis, and x-ray microanalysis). The lattice parameter of the solid solutions is found to exhibit a negative deviation from additivity. The effects of composition and preparation conditions on the structural properties of the solid solutions are discussed. The structural characteristics of abrasively polished surfaces of the samples are shown to be influenced by the preparation conditions.Translated from Neorganicheskie Materialy, Vol. 41, No. 1, 2005, pp. 78–87. Original Russian Text Copyright © 2005 by Artjushenko, Baskov, Golovanov, Kuzmicheva, Lisitskii, Musina, Polyakova, Sakharov, Sakharova.     

Structural and magnetic properties of Cr<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>V<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Te (<Emphasis Type="Italic">x</Emphasis> = 0−0.4) solid solutions

Cr_1?x V _x Te solid solutions with a hexagonal structure (NiAs type) have been obtained in the composition range x = 0?0.4 by direct melting of elemental mixtures, followed by annealing and quenching. The 80-K magnetic moment is found to decrease from 2.4μ_B in CrTe to 1.52μ_B in Cr_0.6V_0.4Te. The Curie temperature varies from 342 K to 321 K, respectively.     

Optical and transport properties of Fe-doped Cd<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Hg<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Se (<Emphasis Type="Italic">x</Emphasis> = 0.35)

The optical and transport properties of Fe²⁺-doped Cd _x Hg_1?x Se crystals with a midgap Fe²⁺ level have been studied. The results demonstrate that Fe²⁺ ions influence both the optical and transport properties of Cd _x Hg_1?x Se〈Fe²⁺〉. The observed optical absorption bands are due to a donor Fe²⁺ level in the band gap, with a depth E _Fe = 0.21 eV, and to band-band transitions. Thermal anneals in Hg and Se vapors have different effects on the carrier concentration and mobility in the crystals. The effect of annealing on the transport properties of the Fe²⁺-doped crystals differs from that for undoped crystals and is governed by the state of point defects.