A STUDY OF THE HELIUM IMPLANTED INTO HR-1 STAINLESS STEEL BY PROTON ELASTIC SCATTERING

Small discs of type HR- 1 austenitic steel (OCr17Ni14MnMo) have been irradiated with 30-170 keV He+ for doses 1015- 1×1018/cm2 at 300K. 2.5 MeV enhanced proton backscattering, TEM, SEM and CEMS are used to investigate the He trapping, bubble structures and the phase stability. It is found that a maximum He concentration of -28 at. % was obtained after implantation with 70 keV He+ at a dose just below critical. The micro- Vickers hardnesses of irradiated layers decrease with increasing dose, particularly when dense bubbles formed. The isomer shift of CEMS increases in the negative direction after irradiation. The austenite is believed to be stable against radiation induced martensitic transformation.     

THE DAMAGE MEASUREMENT OF ION- IMPLANTED COMPOUND SEMICONDUCTOR GaAs BY PIXE-CHANNELING TECHNIQUE

A combined PIXE-RBS channeling measurement system to examine Ⅲ-Ⅴ compound semiconductors has been established. Preliminary results on studying Si+ and Te+ implanted GaAs have been presented and discussed.     

离子色谱法（IC）测定高放废液中的Na^＋,K^＋离子

应用离子色谱法测定高放废液中的Na~+和K~+离子。先以EDTA螯合树脂预处理柱,除去废液中的过渡金属和重金属离子,再用高效低容量离子交换树脂单柱离子色谱法分析测定Na~+、K~+离子。当Na~+和K~+离子含量为μg/ml水平时,方法精度好于5%。