Optimization of the thickness of glass/TiO2/Ag/Ti/TiO2/SiON multilayer film

The TiO₂/Ag/Ti/TiO₂/SiON multilayer film was deposited on glass substrate at room temperature using magnetron sputtering method. By varying the thickness of each layer, the optical property was optimized to achieve good selective spectral filtering performance in Vis-NIR region. The multilayer film achieves maximum transmittance of 92.7% at 690 nm, in which the both TiO₂ layers are 33 nm. For good conductivity and transmittance, a 4 nm Ti layer and a 30 nm SiON layer are necessary.     

Fabrication of thin film TiO2 nanotube arrays on Co–28Cr–6Mo alloy by anodization

Titanium oxide (TiO₂) nanotube arrays were prepared by anodization of Ti/Au/Ti trilayer thin film DC sputtered onto forged and cast Co–28Cr–6Mo alloy substrate at 400 °C. Two different types of deposited film structures (Ti/Au/Ti trilayer and Ti monolayer), and two deposition temperatures (room temperature and 400 °C) were compared in this work. The concentrations of ammonium fluoride (NH₄F) and H₂O in glycerol electrolyte were varied to study their effect on the formation of TiO₂ nanotube arrays on a forged and cast Co–28Cr–6Mo alloy. The results show that Ti/Au/Ti trilayer thin film and elevated temperature sputtered films are favorable for the formation of well-ordered nanotube arrays. The optimized electrolyte concentration for the growth of TiO₂ nanotube arrays on forged and cast Co–28Cr–6Mo alloy was obtained. This work contains meaningful results for the application of a TiO₂ nanotube coating to a CoCr alloy implant for potential next-generation orthopedic implant surface coatings with improved osseointegrative capabilities.     

Growth of stoichiometric TiO2 thin films on Au(100) substrates by molecular beam epitaxy

The present study reports on the growth of thin TiO₂ films onto Au(100) single crystals by Ti evaporation in a reactive O₂ atmosphere at two different substrate temperatures: room temperature (RT) and 300 °C. The growth of the oxide films was monitored by means of X-ray photoemission spectroscopy, while the valence and conduction band electronic structure was investigated by UV and inverse photoemission spectroscopy, respectively.The TiO₂ film grows epitaxially on the Au(100) substrate at 300 °C exhibiting the rutile (100) surface. The evolution of the Ti 2p lineshape with the oxide coverage shows the presence of reduced oxide species (characterized by Ti^3 + ions) at the Au(100) interface. A crystalline and stoichiometric TiO₂ oxide is produced at high substrate temperature, while growth at RT gives a measurable concentration of defects. Post growth annealing in ultra-high vacuum of the RT grown film increases this concentration, while subsequent annealing in O₂ atmosphere restores the sample to the as-grown conditions.     

Influence of metal plasma ion implantation on photo-sensitivity of anatase TiO2 thin films

Nano-scale TiO₂ thin films were synthesized by using sol-gel and spin-coating techniques on glass substrates for photo-catalytic applications. The Ti(IV) butoxide-based TiO₂ thin films were optimized for transforming into the high-purity crystalline anatase phase when calcined at 500 °C. To further enhance the photo-catalysis sensitivity of TiO₂ thin films for use in visible light environments, a metal plasma ion implantation process was implemented to modify the band gap electron configuration of Ti. Various transition metal atoms such as Ni, Cu, V, and Fe were ionized and accelerated at 20 keV to impinge on the surface of TiO₂ substrates at a dosage of 5 × 10¹⁵ ions/cm². ESCA analysis confirmed the binding energy shift of Ti by 0.8-1.2 eV, which accounted for the increased effective positive charge of Ti, resulting in more effective electron trapping capability and, thus, the electron-hole pair separation. In addition, the absorption spectroscopy demonstrated that optical absorption in the visible light regime occurred in specimens implanted with transition metal ions, likely due to the formation of extra impurity energy levels within the original TiO₂ band gap energy structure. Among all tested implant materials, the band gap energy of TiO₂ was effectively reduced by Cu and Fe ion implantation by 0.9-1.0 eV, which was sufficient enough to excite valence electrons over the band gap in visible light environments. The feasibility of the metal-doped TiO₂ thin films for effective applications under visible light irradiation was further confirmed by using super-hydrophilicity contact-angle measurement.     

Water permeation through organic-inorganic multilayer thin films

We prepared organic (self-assembled monolayer (SAM))-inorganic (TiO₂) multilayer barrier films on polyethylene terephthalate substrate using atomic layer deposition and molecular layer deposition methods in the same deposition chamber. The water permeation was mainly blocked by the inorganic TiO₂ layer. While the lag time was proportional to the thickness of the TiO₂ layer, the steady-state permeation rate was relatively independent of the thickness. The multilayer approach was effective in extending the lag time due to both the tortuous path effect and the internal desiccant effect. Water permeation occurred sequentially in the organic-inorganic multilayer barriers by water accumulation in the organic SAM layers. The water vapor transmission rate was 7.0 × 10^− 4 g/m²·day during the lag time of 155 h at 60 °C and a relative humidity of 85% with 5-dyad barrier film.     

Preparation of anatase TiO2 thin films for dye-sensitized solar cells by DC reactive magnetron sputtering technique

Anatase titanium dioxide (TiO₂) thin films are prepared by DC reactive magnetron sputtering using Ti target as the source material. In this work argon and oxygen are used as sputtering and reactive gas respectively. DC power is used at 100 W per 1 h. The distance between the target and substrate is fixed at 4 cm. The glass substrate temperature value varies from room temperature to 400 °C. The crystalline structure of the films is determined by X-ray diffraction analysis. All the films deposited at temperatures lower than 300 °C were amorphous, whereas films obtained at higher temperature grew in crystalline anatase phase. Phase transition from amorphous to anatase is observed at 400 °C annealing temperature. Transmittances of the TiO₂ thin films were measured using UV-visible NIR spectrophotometer. The direct and indirect optical band gap for room temperature and substrate temperature at 400 °C is found to be 3.50, 3.41 eV and 3.50, 3.54 eV respectively. The transmittance of TiO₂ thin films is noted higher than 75%. A comparison among all the films obtained at room temperature showed a transmittance value higher for films obtained at substrate temperature of 400 °C. The morphology of the films and the identification of the surface chemical stoichiometry of the deposited film at 400 °C were studied respectively, scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). The surface roughness and the grain size are measured using AFM.     

Fabrication of light absorbing TiO2 μ-donuts

TiO₂ µ-donuts were fabricated on glass and silicon by sol-gel technique using a mask of PMMA nanopillars created by removing PS from a spin-coated composite polymer of PS and PMMA. X-ray diffraction confirmed the anatase TiO₂ phase. X-ray photoelectron spectra showed signals from Ti 2p_3/2 at 458.8 eV and O 1s at 530.4 eV confirming presence of TiO₂. The heights and diameters of the TiO₂ µ-donuts are ~ 353 nm and ~ 2.8 µm, respectively as revealed by atomic force microscopy. UV-vis absorption spectra of TiO₂ µ-donuts showed an unusual light absorption at ~ 524 nm making its potential use in solar-cell applications.     

Study of the growth of CuAlS2 thin films on oriented silicon (111)

Within the chalcopyrite family the sulphur based compounds CuMS₂ (M = In, Ga, Al) have attracted much interest in recent years because they show a direct wide band-gap covering from E_gap = 1.53 eV (CuInS₂) over E_gap = 2.43 eV (CuGaS₂) to E_gap = 3.49 eV (CuAlS₂). Therefore they are particularly suitable for optoelectronic as well as photovoltaic applications. The CuAlS₂ semiconductor is one of these compounds and has good luminescent properties and a wide direct gap of 3.5 eV making it suitable for the use as material for light-emitting devices in the blue region of the spectrum. To dig up fully its potential a better understanding of the fundamental properties of the CuAlS₂ film itself is essential, which could be achieved from high-quality single-crystalline materials. So, the aim of this work has been to study the growth of multilayer CuAlS₂ thin films on Si(111) substrates at a substrate temperature of 723 K. One, two and three layers with 60, 120 and 180 nm thicknesses, respectively, were deposited on Si(111) substrate. The effect of the CuAlS₂ layer numbers on the structure, morphology and optical properties of the samples was investigated. The X-ray diffraction studies revealed that all the samples are polycrystalline in nature, single CuAlS₂ phase and exhibiting chalcopyrite structure with a preferred orientation along the (112) direction. However, the sample with three CuAlS₂ layers exhibit the highly oriented (112) plane with grain sizes of 80 nm. So we show that this experimental process affects significantly the structural properties of the CuAlS₂ films. Raman spectroscopic measurements indicated five prominent peaks at 193, 205, 325, 335 and 370 cm^− 1. The possible origin of the 370 cm^− 1 peak was investigated and was found to be some local vibration in the structure. The peaks at 193-205 and 335 cm^− 1 were ascribed to A₁ and B₂ modes, respectively.     

Preparation of one-dimensional photonic crystals by sol-gel process for magneto-optical materials

One-dimensional photonic crystal (PC) of periodically alternating low (SiO₂) and high (TiO₂) refractive index materials was prepared by sol-gel dip coating method that controls the thickness of each layer with nanometer level. The photonic band gap of high reflectivity was verified at wavelengths between 590 nm and 820 nm, which became significant with increasing the number of bilayer. The UV-vis spectra, SEM image and glow discharge optical emission spectroscopy indicate the periodic structure of SiO₂/TiO₂ multilayer. The magnetic layer of CoFe₂O₄ was also prepared by a sol-gel dip coating method. After the annealing at 700 °C, the single phase of CoFe₂O₄ film with spinel structure, without any preferred crystalline orientation, was obtained. In addition, the one-dimensional magnetophotonic crystal (MPC), in which the magnetic defect layer of CoFe₂O₄ is introduced into the periodic structure, was prepared. The light was localized at the magnetic defect due to the interference of the multilayer film, and the localized transmittance was observed around 530 nm. The Faraday rotation of MPC shows a peak at ∼ 570 nm which is close to the localized peak of transmittance. This may correspond to the enhancement of Faraday rotation due to the localization of light.     

Structural and mechanical properties of titanium and titanium diboride monolayers and Ti/TiB2 multilayers

Nano-multilayers represent a new class of engineering materials that are made up of alternating nanometer scale layers of two different components. In the present work a titanium (Ti) monolayer was combined with titanium diboride (TiB₂) to form a Ti/TiB₂ nano-multilayer. Designed experimental parameters enabled an evaluation of the effects of direct current bias voltage (U_b) and bilayer thickness (Λ) during multilayer deposition on the mechanical properties of reactively sputtered Ti/TiB₂ multilayer films. Their nanostructures and mechanical properties were characterized and analyzed using X-ray photoelectron spectroscopy (XPS), low-angle and high-angle X-ray diffraction (XRD), plan-view and cross-sectional high-resolution transmission electron microscopy (HRTEM), and microindentation measurements. Under the optimal bias voltage of U_b = − 60 V, it was found that Λ (varied from 1.1 to 9.8 nm) was the most important factor which dominated the nanostructure and hardness. The hardness values obtained varied from 12 GPa for Ti and 15 GPa for TiB₂ monolayers, up to 33 GPa for the hardest Ti/TiB₂ multilayer at Λ = 1.9 nm. The observed hardness enhancement correlated to the layer thickness, followed a relation similar to the Hall-Petch strengthening dependence, with a generalized power of ∼ 0.6. In addition, the structural barriers between two materials (hcp Ti/amorphous TiB₂) and stress relaxation at interfaces within multilayer films resulted in a reduction of crack propagation and high-hardness.     

Interfacial nature of Ag nanoparticles supported on TiO2 photocatalysts

Silver nanoparticles supported on anatase TiO₂ nanoparticles have been prepared by deposition–precipitation, and characterized by X-ray photoelectron spectroscopy, including scanning electron microscopy, X-ray diffraction crystallography, Raman, and UV–visible absorption spectroscopy. The Ag 3d peak and the X-ray diffraction patterns show characteristics of purely metallic Ag, with no indication of Ag oxide species. Depth-profiling X-ray photoelectron spectroscopy with Ar⁺ ion beam sputtering show a significant change in Ti 2p, and an asymmetric broadening of Ag 3d to a higher binding energy side. A decrease in major Ti 2p _3/2 at 459.2 eV and a significant increase in lower binding energy peak are due to change in oxidation state of Ti from +4 to +3/+2. A broadening of Ag 3d peak with sputtering time is tentatively assigned to a final state quantum size effect. Upon annealing the deposition–precipitation sample, no significant change in Ag 3d peak is observed, while Ti 2p and O 1s XPS intensities are reduced, plausibly due to change in analyzed surface area for TiO₂. The photocatalytic activity for the photodegradation of methyl orange is dramatically reduced upon high Ag-loading, compared to bare TiO₂. The X-ray photoelectron spectroscopy of Ag on TiO₂ prepared by an electrochemical deposition reveals that Ag is also metallic, with no evidence of an oxide form. Upon annealing the electrodeposited sample, the Ag 3d peak shifts by +0.3 eV, while the Ti 2p and O 1s show no critical change in intensity and peak position.     

Structural evaluation of sol-gel derived lead strontium titanate diffusion barrier for integration in lead zirconate titanate transducer design

Sol-gel derived Pb₄₀Sr₆₀TiO₃ (PST) thin film has been investigated as a diffusion barrier for integrating in PbZr₃₀Ti₇₀O₃ (PZT) device structures on Si substrates. PST film was deposited on SiO₂/Si substrate and annealed at a relatively low temperature range of 550-600 °C producing a crack-free, smooth and textured surface. Following deposition on PST/SiO₂/Si template PZT thin film was crystallised exhibiting random grain orientations and an insertion of the bottom Pt/Ti electrode forming PZT/Pt/Ti/PST/SiO₂/Si stacks promoted the preferred PZT (111) perovskite phase. PZT (111) peak intensity gradually decreased along with slight increase of the PZT (110) peak with increasing annealing temperature of the buffer PST film. The dielectric and ferroelectric properties of the PZT with barrier PST deposited at 550 °C were assessed. The dielectric constant and loss factor were estimated as 390 and 0.034 at 100 kHz respectively and the remnant polarisation was 28 µC/cm² at 19 V. The performance of the PZT/PST device structures was compared to similar PZT transducer stacks having widely used barrier TiO₂ layer.     

Refractory metal reactivity towards oxide surface: W/TiO2(1 1 0) case

Reactivity of deposited tungsten towards TiO₂(1 1 0) surface was studied using synchrotron radiation photoemission spectroscopy (both core levels, valence band and resonant photoemission) on Materials Science Beamline at ELETTRA. W depositions carried out at room temperature on TiO₂(1 1 0) surface give rise to an interfacial reaction which leads to a metastable situation due to kinetic limitations. Annealing induces chemical changes which are function of the initial coverage; for fractional coverage, annealing induces completion of oxidation of deposit whereas reduction to metallic tungsten occurs for highest coverage. These results demonstrate that interaction of W with TiO₂(1 1 0) surface is, as the one of molybdenum, driven by a balance between W-O interactions and W-W depending on tungsten atoms density on TiO₂ surface.     

Residual stresses and Raman shift relation in anatase TiO2 thin film

Anatase TiO₂ film (100-1000 nm thick) grown on glass, sapphire (0001), and Si (100) substrates by pulsed dc-magnetron reactive sputtering were evaluated for stress and strain analysis using Raman spectroscopy and curvature measurement techniques. The X-ray analysis revealed that films prepared for this study were purely anatase, and the measurements indicate that the film exhibit that (101) is the preferred growth orientation of the crystallites, especially for the film thicker than 100 nm. Curvature measurements and Raman spectroscopy, with 514.5 nm excitation wavelength, phonon line shift were used for stress analysis. A comparison between Raman lineshapes and peak shifts yields information on the strain distribution as a function of film thickness. The measurements of residual stresses for crystalline anatase TiO₂ thin film showed that all thin film were under compressive stress. A correlation between Raman shifts and the measured stress from the curvature measurements was established. The behavior of the anatase film on three different substrates shows that the strain in film on glass has a higher value compared to the strain on sapphire and on silicon substrates. The dominant 144 cm^− 1E_g mode in anatase TiO₂ clearly shifts to a higher value by 0.45-5.7 cm^− 1 depending on the type of substrate and film thickness. The measurement of the full width at half maximum values of 0.59-0.80 (2θ°) for the anatase (101) peaks revealed that these values are greater than anatase powder 0.119 (2θ°) and this exhibits strong crystal anisotropy with thermal expansion.     

Ultrasonic spray pyrolysis of surface modified TiO2 nanoparticles with dopamine

Spherical, submicronic TiO₂ powder particles were prepared in the low temperature process of ultrasonic spray pyrolysis (150 °C) by using as a precursor aqueous colloidal solutions consisting of surface modified 45 Å TiO₂ nanoparticles with dopamine. Detailed structural and morphological characterization of colored submicronic TiO₂ spheres was performed by X-ray powder diffraction (XRPD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), laser particle size analysis and FTIR techniques. Also, optical characterization of both dopamine-modified TiO₂ precursor nanoparticles and submicronic TiO₂ powder particles was performed using absorption and diffuse reflectance spectroscopy, respectively. A significant decrease of the effective band gap (1.9 eV) in dopamine-modified TiO₂ nanoparticles compared to the band gap of bulk material (3.2 eV) was preserved after formation of submicronic TiO₂ powder particles in the process of ultrasonic spray pyrolysis under mild experimental conditions. Due to the nanostructured nature, surface-modified assemblage of TiO₂ nanoparticles preserved unique ability to absorb light through charge transfer complex by photoexcitation of the ligand-to-TiO₂ band, conventionally associated with extremely small TiO₂ nanoparticles (d < 20 nm) whose surface Ti atoms, owing to the large curvature, have penta-coordinate geometry.     

Influence of substrate temperature on the materials properties of reactive DC magnetron sputtered Ti/TiN multilayered thin films

Ti/TiN multilayers were deposited by DC reactive magnetron sputtering method using a titanium target and an Ar-N₂ mixture discharge gas. XRD technique was employed to study the structure of the coatings and to observe the variations of structural parameters with substrate temperatures. An increase in grain size with increase of substrate temperature was observed. The components of Ti 2p doublet, related to TiN, TiON and TiO₂, were observed in the core-level spectra of the deposited multilayer films from XPS analysis. A microhardness value of 25.5 GPa was observed for Ti/TiN multilayers prepared at 400 °C. Electrical properties were found to depend on substrate temperature.     

Effects of oxygen flow ratios and annealing temperatures on Raman and photoluminescence of titanium oxide thin films deposited by reactive magnetron sputtering

Titanium oxide (TiO_x) thin films were deposited on the Si(100) substrates by direct-current reactive magnetron sputtering at 3-15 % oxygen flow ratios (FO₂% = FO₂/(FO₂ + FAr) × 100%), and then annealed by rapid thermal annealing (RTA) at 350-750 °C for 2 min in air. The phase, bonding and luminescence behaviors of the as-deposited and annealed TiO_x thin films were analyzed by X-ray diffraction (XRD), Raman spectroscopy and photoluminescence (PL) spectroscopy, respectively. The as-deposited TiO_x films were amorphous from XRD and showed weak Raman intensity. In contrast, the distinct crystalline peaks of anatase and rutile phases were detected after RTA at 550-750 °C from both XRD and Raman spectra. A mixture of anatase and rutile phases was obtained by RTA at 3 FO₂% and its amount increased with annealing temperature. Only the anatase phase was detected in the 6-15 FO₂% specimens after RTA. The PL spectra of all post-annealed TiO_x films showed a broad peak in visible light region. The PL peak of TiO_x film at 3 FO₂% at 750 °C annealing can be fitted into two Gaussian peaks at ~ 486 nm (2.55 eV) and ~ 588 nm (2.11 eV) which were attributed to deep-level emissions of oxygen vacancies in the rutile and anatase phases, respectively. The peak around 550 nm was observed at 6-15 FO₂% which is attributed to electron-hole pair recombination from oxygen vacancy state in anatase phase to valence band. The variation of intensity of PL peaks is concerned with the formation of the rutile and anatase phases at different FO₂% and annealing temperatures.     

Formation of β-FeSi2 thin films on non-silicon substrates

β-FeSi₂ films were prepared on non-silicon substrates by sputtering. The crystalline growth, stress induced cracks and adhesive ability to the substrate were investigated on substrate temperature and thermal expansion coefficient of substrate materials. It was found that crack formation in β-FeSi₂ films was dependent on the thermal expansion coefficients of CaF₂, MgO and quartz glass insulating materials. High-density cracks were observed from β-FeSi₂ films on CaF₂ and quartz glass substrates with large difference of the thermal expansion coefficient between β-FeSi₂ film and substrate materials, and it was crack-free on MgO substrate with a thermal expansion coefficient close to that of β-FeSi₂ films. Polycrystalline β-FeSi₂ films grew on Mo, Ta, W, Fe and stainless steel (SS) substrates at low substrate temperature around 400 °C. There was no α-FeSi₂ phase confirmed in the films. All the films had continuous structures without noticeable cracks even though they have different thermal expansion coefficients. Capacity-voltage measurements showed that β-FeSi₂ films formed on SS substrates has n-type conductivity, with residual carrier concentrations of about 1.3∼6.4 × 10¹⁸ cm^− 3. Auger electron spectroscopy depth profile measurements identified homogeneous distribution of Fe and Si atoms in the film region, but with a large interface region between the film and the substrate.     

Chemical states of carbon in amorphous boron carbide thin films deposited by radio frequency magnetron sputtering

Boron carbide thin films were deposited by radio frequency (RF) magnetron sputtering and characterized by X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, and high resolution transmission electron microscopy. The results reveal that the structure of thin films deposited at substrate temperatures lower than 350 °C is amorphous. We found that there are four chemical states for carbon in amorphous boron carbide thin films deposited by RF magnetron sputtering. One is the segregated carbon in form of the graphitic inclusions in the thin film identified by Raman spectroscopy and Raman mapping using two strong peaks at ~ 1360 cm^− 1 and ~ 1590 cm^− 1, but the XPS results show that the graphitic inclusions do not connect to the substrate directly. On the surface the carbon forms C=O bonds characterized by the peak of C1s core level at 285.0 eV besides B-C bonds in the boron carbide with the peak of C1s being at 282.8 eV. The detailed analysis of B-C bonds in the boron carbide shows that there are two states for carbon atoms in B-C bonds: in the C-B-C models with C1s peak at 282.3 eV and in the icosahedra with C1s peak at 283.3 eV.     

Spray deposition and property analysis of anatase phase titania (TiO2) nanostructures

Anatase phase titanium dioxide thin films have been deposited at various substrate temperatures by chemical spray pyrolysis of an aerosol of titanyl acetylacetonate. Deposited TiO₂ films were nanocrystalline and preferentially oriented along [101] direction, uniform and adherent to the glass substrate. Best films processed at 450 °C were characterized to analyze its phase composition, texture, roughness, optical and electrical properties. X-ray photoelectron spectroscopy revealed that the surface of the film has only the Ti⁴⁺ cations to form perfect TiO₂ stoichiometry with less amount of hydration. Atomic force microscopy image demonstrated the existence of homogeneous and rough surface, suitable for electrocatalytic applications. The film has an optical transmittance more than 90% and the refractive index of 2.07 was recorded at the wavelength 633 nm. Due to nano-sized grains, obtained optical band gap (3.65 eV) of the TiO₂ thin film was larger than that of the bulk TiO₂ (3.2 eV). Calculated porosity of the films 0.44, revealed the porous nature of the films. Hall measurements indicated that these materials are p-type and yield a carrier density of the order 8.8 × 10²⁰ cm⁻³ and a carrier mobility of 0.48 × 10⁻⁶ cm²/Vs. The dc electrical conductivity was therefore very low (8.91 × 10⁻⁶ S/cm) because of lower value of mean free path of the charge carriers (4.36 × 10⁻¹¹ cm). It gives an impression that the process of spray pyrolysis provides an easy way to tailor make thin films possessing superior properties.