Structure of diamond polycrystalline films deposited on silicon substrates

The article presents results of structural studies of polycrystalline diamond thin films deposited by hot filament CVD on silicon substrates. The films were characterized using Scanning Electron Microscopy (SEM), Raman Spectroscopy (RS), Electron Backscattered Diffraction (EBSD), Energy Dispersive Spectroscopy (EDS) and Secondary Ion Mass Spectroscopy (SIMS). Both the EBSD patterns and Raman spectra confirm that the grains visible in the electron micrographs are diamond micro-crystallites. The residual stress in the films is found to be in the range between −4.29 GPa and −0.56 GPa depending on the sample thickness. No evidence of lonsdalite and graphite has been registered in the polycrystalline material of the investigated samples. Evidence of the existence of silicon carbide at the diamond/silicon interface is presented. It is also suggested that an amorphous carbonaceous film covers the silicon surface in the regions of holes in the thin diamond layers.     

The influence of working gas on CVD diamond quality

The effect of the working gas pressure and its composition on diamond quality and particles size was investigated. The diamond layers were grown in Hot Filament Chemical Vapor Deposition (HF CVD) reactor. A methanol–hydrogen gas mixture was used as the precursor gas. The structure of these films was characterized by scanning electron microscopy (SEM) and micro-Raman spectroscopy. Typically, the diamond's crystallite size decreased with increasing pressure and increasing with methanol concentration. Additionally the admixture of non-diamond (sp²-hybridized carbon) phase also increased with increasing both of deposition pressure and of methanol concentration. It was observed that the deposition pressure has a weaker influence on diamond quality than the methanol concentration.     

Cyclic voltammetry response of an undoped CVD diamond electrodes

The polycrystalline undoped diamond layers were deposited on tungsten wire substrates by using hot filament chemical vapor deposition (HFCVD) technique. As a working gas the mixture of methanol in excess of hydrogen was used. The morphologies and quality of as-deposited films were monitored by means of scanning electron microscopy (SEM), X-ray diffraction (XRD) and Raman spectroscopy respectively. The electrochemical activity of the obtained diamond layers was monitored by using cyclic voltammetry measurements. Analysis of the ferrocyanide–ferricyanide couple at undoped diamond electrode suggests that electrochemical reaction at diamond electrode has a quasireversibile character. The ratio of the anodic and cathodic peak currents was always close to unity. In this work we showed that the amorphous carbon admixture in the CVD diamond layer has a crucial influence on its electrochemical performance.     

Junction like behavior in polycrystalline diamond films

We have successfully fabricated polycrystalline diamond rectifying junction devices on n-type (1 0 0) silicon substrates by Hot Filament Chemical Vapor Deposition (HFCVD) using methane/hydrogen process gas and trimethyl borate and trimethyl phosphite dissolved in acetone as p- and n-type dopants, respectively. Impedance spectroscopy and current-voltage analysis indicates that the conduction is vertical down the grains and facets and not due to surface effects. Electrical characteristics were analyzed with In and Ti/Au top metal contacts with Al as the substrate contact. Current-voltage characteristics as a function of temperature showed barrier potentials of 1.1 eV and 0.77 eV for the In and Ti/Au contacts, respectively. Barrier heights of 4.8 eV (In) and 4.4 eV (Ti/Au) were obtained from capacitance-voltage measurements.     

Preparation of CVD diamond coatings on gamma titanium aluminide using MPECVD with various interlayers

CVD diamond coatings were deposited on to γ-TiAl surfaces using a microwave plasma enhanced CVD to improve wear properties and the performance of γ-TiAl. Diamond coatings were directly deposited on to γ-TiAl substrates and deposited on to TiC, Ti₅Si₃, Al₂O₃ + TiO₂, and Si interlayers prepared on γ-TiAl substrates. The diamond coatings deposited directly on γ-TiAl suffered severe delamination and cracked. Those deposited on TiC and Ti₅Si₃ interlayers partially delaminated, whereas those deposited on Al₂O₃ + TiO₂ and Si interlayers adhered well to the underlying surfaces. The diamond films obtained were characterized using scanning electron microscopy, Raman spectroscopy, and X-ray diffraction. Raman spectra showed that polycrystalline and nanocrystalline diamond films grew on γ-TiAl. Residual internal stresses of the diamond coatings deposited on interlayered-γ-TiAl were estimated experimentally from Raman spectra. The coatings prepared on Al₂O₃ + TiO₂/γ-TiAl and Si/γ-TiAl showed lower residual stresses.     

Gas-phase characterization in diamond hot-filament CVD by infrared tunable diode laser absorption spectroscopy

In hot-filament CVD the gas-phase composition is a vital parameter for diamond coating results. Concentrations of carbon-containing species have significant influence on growth rate, quality and morphology of deposited diamond. To learn more about the correlations between process parameters and gas species concentrations we applied the highly sensitive infrared tunable diode laser absorption spectroscopy (IR-TDLAS) technique. With a sophisticated compact IR-TDLAS unit, relative and absolute concentrations of CH₄, C₂H₂ and CO were simultaneously measured. Also, the absolute concentration of the methyl radical was determined in dependence on process parameters. Concentrations of CO₂, C₂H₆ and HCN were investigated but found to be lower than the detection limit. The influence of the typical diamond CVD-process parameters on various species concentrations is discussed. The applicability of IR-TDLAS for hot-filament process monitoring is evaluated. In context with diamond growth results, information for CVD process refinement was deducted from the IR-TDLAS measurements.     

Electrical characterization of CVD diamond thin films grown on silicon substrates

Diamond thin films grown on high resistivity, 100 oriented silicon substrates by the hot filament chemical vapor deposition (HFCVD) method have been characterized by four-point probe and current-voltage (through film) techniques. The resistivities of the as-grown, chemically etched and annealed samples lie in the range of 10² Ω cm to 10⁸ Ω cm. The Raman measurements on these samples indicate sp³ bonding with a sharp peak at 1332 cm⁻¹. The surface morphology as determined by scanning electron microscope shows polycrystalline films with (100) or (111) faceted structures with average grain size of ≈2.5 μm. The through film current-voltage characteristics obtained via indium contacts on these diamond films showed either rectifying or ohmic behavior. The difference in Schottky and ohmic behavior is explained on the basis of the high or low sheet resistivities measured by four-point probe technique. 5% methane to hydrogen concentration during film growth resulted in poor surface morphology, absence of sp³ bonds, and low resistivity.     

Ultraviolet-visible and surface-enhanced Raman scattering spectroscopy studies on self-assembled films of ruthenium phthalocyanine on organic monolayer-modified silver substrates

A self-assembled film of ruthenium phthalocyanine (RuPc) fabricated on a silver substrate pre-modified with a monolayer of 4-mercaptopyridine (PySH) or 1,4-bis[2-(4-pyridyl)ethenyl]-benzene (BPENB) was studied by ultraviolet-visible (UV-Vis) and surface enhanced Raman scattering (SERS) spectroscopy. PySH or BPENB was used as a ligand to link RuPc since they not only modify the silver substrate, but also deliver a pyridyl group pointing out from the silver surface. Therefore, we can explore the relationship between the structure and orientation of metallophthalocyanine and the substrate modified by the two kinds of organic-monolayers with the different conjugates and molecular lengths. UV-Vis bands due to the organic-monolayer (PySH or BPENB) modified silver films shift to longer wavelengths and a new band arising from the metallophthlocyanine appears, suggesting the binding of RuPc to PySH/BPENB, as well as the interaction between the marcocycle of RuPc and the ring of PySH/BPENB. Vibrational bands arising from both the RuPc and PySH/BPENB moieties appear clearly in the SERS spectra of the RuPc-PySH/BPENB composite films, indicating that RuPc is successfully assembled on the top of PySH/BPENB film. The shifts and relative intensity changes of bands due to PySH or BPENB in the SERS spectra imply the binding of the metallophthalocyanine to the pyridyl group in the composite films. Furthermore, the comparison of the SERS spectra revealed that the orientations of PySH and BPENB in the two kinds of composite films are different; the BPENB moiety in the RuPc-BPENB composite film is more perpendicular to the silver surface compared with the PySH moiety in the RuPc-PySH composite film.     

氧化锌薄膜的拉曼光谱研究

利用拉曼光谱结合X射线衍射分析对未掺杂和掺杂的ZnO薄膜，陶瓷薄膜进行了研究，ZnO薄膜及ZnO陶瓷薄膜均由sol-gel法制备，掺杂组份有Bi2O3,Sb2O3,MnO和Cr2O3等。结果表明，未掺杂的薄膜的ZnO主晶相均表现出显著的定向生长特征，其拉曼光谱特征谱峰为437cm^-1，谱峰强度随薄膜退火温度的提高略有增强，掺杂后ZnO的拉曼谱峰发生了红移，掺Bi2O3后ZnO的拉曼谱峰由347cm^-1移质移至434cm^-1，掺Sb2O3后ZnO的拉曼谱峰移至435cm^-1，而掺杂Bi2O3,Sb2O3,MnO和Cr2O3等组份的ZnO陶瓷薄膜的ZnO拉曼谱峰则移至434cm^-1，说明掺杂元素进入了ZnO晶格，引起了晶格的变化，ZnO薄膜性能不仅受次晶相组成的影响，而且受因掺杂元素进入而引起的ZnO晶格畸变的影响。     

Deposition of diamond films on metal substrates

In this paper we report on the growth of polycrystalline diamond films on Mo, W, and Ni substrates using oxy-acetylene combustion flame technique. Effect of substrate temperature on the growth of diamond films has been studied in the temperature range 600–1100°C. The deposits and their surface morphology has been characterized by X-ray diffraction and scanning electron microscopy (SEM). A short duration pretreatment of Mo substrates by outer zone of the oxy-acetylene flame at lower substrate temperatures, results in the improvement of quality and adherence of the films. Growth of diamond as well as other intermediate compounds depending on the nature of substrates and interface layers is discussed. Paper presented at the poster session of MRSI AGM VI, Kharagpur, 1995     

Fluidized bed micro-machining and HFCVD of diamond films onto Co-cemented tungsten carbide (WC-Co) hardmetal slabs

The effect of fluidized bed (FB) treatment upon hot filament chemical vapor deposition (HFCVD) of polycrystalline diamond films onto WC-Co hardmetal substrates was investigated. Several scenarios to make the substrates ready for HFCVD were, comparatively, evaluated and the resulting diamond films were examined in terms of their morphology and adhesion. The diamond grain density was measured by scanning electron microscopy. The adhesion of continuous diamond film to substrate was evaluated by the reciprocal of the slope of crack radius-indentation load functions. Surface binder dissolution followed by FB treatment (PF pretreatment) allowed very high diamond nucleation density and smaller grain size. The adhesion of films grown on PF pretreated substrates was found to be very close to that of films deposited on hardmetal slabs pretreated by Murakami's reagent followed by Co etching with Caro's acid and seeded with diamond suspension in an ultrasonic vessel (MPS pretreatment). However, diamond coatings on MPS pretreated samples exhibited a rougher surface morphology as a result of both lower diamond nucleation density and larger substrate surface roughening by Murakami's etching. Based upon experimental findings, our newly developed PF pretreatment was found to be a very promising technique in substrates conditioning as well as in promoting adherent, uniform and smooth diamond coatings onto hardmetal tools and wear parts.     

Growth of diamond thin films by chemical vapour deposition

Deposition of diamond thin films on non-diamond substrates at low pressures (<760 torr) and low temperatures (<2000°C) by chemical vapour deposition (CVD) has been the subject of intense research in the last few years. The structural and the electrical properties of CVD diamond films grown on p-type 〈111〉 and high-resistivity (>100 kΩ-cm) 〈100〉 oriented silicon substrates by hot filament chemical vapour deposition technique are described in this review paper.     

Characterization of diamond films deposited on titanium and its alloys

Titanium and its alloys have important applications for example in aerospace or as bioimplants. Some of these applications would be improved by diamond coatings. However the large thermal expansion mismatch between diamond and titanium or its alloys creates high residual stresses, up to about 7 GPa at 800 °C, which represent an important drawback. In this study, polycrystalline diamond films were deposited on pure titanium and Ti-6Al-4V in a classical tubular microwave plasma reactor from C-H(-O)-containing gas mixtures, at a temperature in the range 600–900 °C. Raman spectroscopy provided information about the diamond grain stress, which is obviously related to the deposition temperature. X-ray diffraction indicates the presence of titanium carbide or oxycarbide. Some other characterizations by X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM) and electron energy loss spectroscopy (EELS) are reported. It is shown that XPS coupled to argon ionic etching allows us to study the first steps of the deposition process. The structure and the chemical composition at the interface of a thicker deposit are obtained by TEM and EELS.     

Morphological and electrochemical properties of boron-doped diamond films on carbon cloths with enhanced surface area

The electrochemical properties of doped diamond electrodes (10¹⁷–10¹⁹ B cm^− 3) grown on carbon fiber cloths in H₂SO₄ 0.1 mol L^− 1 electrolyte were investigated. Cyclic voltammograms of B-doped diamond/carbon fiber cloth and carbon fiber cloth electrodes showed that both kinds of electrodes possess similar working potential windows of about 2.0 V. The electrode capacitance was determined by impedance spectroscopy and chronopotentiometry measurements and very close values were obtained. The capacitance values of the diamond film on carbon fiber cloths were 180 times higher than the ones of diamond films on Si. In this paper we have also discussed the capacitance frequency dependence of diamond/carbon cloth electrodes.     

微波等离子体化学气相沉积法在硅片上同时生长碳化硅和金刚石

研究了衬底温度、核化密度、衬底表而预处理等工艺参数对微波等离子体化学气相沉积法在硅片上同时生长碳化硅和金刚石的影响.采用扫描电镜、X-射线衍射、喇曼光谱和红外光谱对样品进行了表征.结果表明:从高核化密度生长的金刚石膜中探测不到碳化硅;不论对硅衬底进行抛光预处理还是未抛光预处理,从低核化密度牛长的金刚石厚膜中总能探测到碳化硅.碳化硅生长在硅衬底上未被金刚石覆盖的地方,或者是在金刚石晶核之间的空洞处.碳化硅形成和金刚石生长是同时发生的两个竞争过程.此研究结果为制备金刚石和碳化砟复合材料提供了一种新的方法.     

Improved flow conditions in diamond hot filament CVD—Promising deposition results and gas phase characterization by laser absorption spectroscopy

A hot filament plant for chemical vapor deposition of crystalline diamond featuring new operating stages has been built. It allows (i) a separate methane feed locally at substrate position and (ii) supplying a forced gas flow towards the substrate. To understand the effect of these two features on diamond growth, the results of systematic diamond growth experiments are discussed. To reveal the effects of these features on the gas phase, infrared tunable diode laser absorption spectroscopy (IR-TDLAS) was employed. Using a forced gas flow showed a remarkable increase in the diamond growth rate of a factor >6 compared to standard coating setups. By lowering the methane content in the forced flow diamond quality factors >95% were achieved. IR-TDLAS showed an increase of all measured carbon-containing species CH₄, C₂H₂, CH₃ and CO when applying the forced flow. The mass transport dominated by diffusion in the standard setup shifts to a convective gas transport in the forced flow setup. The induced laminar flow causes a more effective transport of the growth species to the substrate and leads to higher growth rates. Application of feeding methane locally at substrate position leads to exceptionally high growth rates (0.68 μm/h) at correspondingly high diamond quality (91%). For this, the methane content has to be lowered, though, which at the same time leads to a more homogenous deposition lateral on the surface. From the IR-TDLAS gas phase measurements, a more effective precursor dissociation, a higher CH₃ density and a rise in the CH₃?C₂H₂ ratio above the substrate surface can be derived.     

Enhanced field emission from ZnO nanoneedles on chemical vapour deposited diamond films

ZnO nanoneedles were coated on hot filament chemical vapour deposited diamond thin films to enhance the field emission properties of ZnO nanoneedles. The virgin diamond films and ZnO nanoneedles on diamond films were characterized using scanning electron microscopy, X-ray photoelectron spectroscopy and Raman spectroscopy. The field emission studies reveal that the ZnO nanoneedles coated on diamond film exhibit better emission characteristics, with minimum threshold field (required to draw a current density ~ 1 μA/cm²) as compared to ZnO needles on silicon and virgin diamond films. The better emission characteristic of ZnO nanoneedles on diamond film is attributed to the high field-enhancement factor resulting due to the combined effect of the ZnO nanoneedles and diamond film.     

Optical and mechanical properties of diamond like carbon films deposited by microwave ECR plasma CVD

Diamond like carbon (DLC) films were deposited on Si (111) substrates by microwave electron cyclotron resonance (ECR) plasma chemical vapour deposition (CVD) process using plasma of argon and methane gases. During deposition, a d.c. self-bias was applied to the substrates by application of 13·56 MHz rf power. DLC films deposited at three different bias voltages (−60 V, −100 V and −150 V) were characterized by FTIR, Raman spectroscopy and spectroscopic ellipsometry to study the variation in the bonding and optical properties of the deposited coatings with process parameters. The mechanical properties such as hardness and elastic modulus were measured by load depth sensing indentation technique. The DLC film deposited at −100 V bias exhibit high hardness (∼ 19 GPa), high elastic modulus (∼ 160 GPa) and high refractive index (∼ 2·16–2·26) as compared to films deposited at −60 V and −150 V substrate bias. This study clearly shows the significance of substrate bias in controlling the optical and mechanical properties of DLC films.     

Time-modulated chemical vapour deposition diamonf on mould making 2738 steel

The mould making industry is known to be worldwide in rapid expansion, due to the fact that polymeric based materials are increasingly replacing conventional used ones, thus placing enormous challenges on production methods and tools.The application of chemical vapour deposition (CVD) diamond coatings onto moulds can be a promising tool to improve properties such as adhesion, reduction on abrasion and corrosive wear, filling and releasing problems or even tool thermal fatigue. Despite its potential for use in these types of applications, diamond coating on steel substrates is not problem-free and a few critical problems such as adhesion to steel, process temperatures and film property control, remain to be solved.This paper reports on experimental results obtained from an investigation focusing on the deposition of diamond coatings onto steel substrates using the new time-modulated chemical vapour deposition process. Furthermore, the technique is evaluated in order to establish its suitability for application in mould production tools.