Photo-induced properties of thin TiO2 films deposited using the radio frequency plasma enhanced chemical vapor deposition method

Thin titanium oxide films were deposited with the help of radio frequency plasma enhanced chemical vapor deposition technique. The RF power of deposition was applied as the operational parameter of the process, and optical properties, transmittance in particular, of the films were utilized as criterion for their selection.Photo-induced properties of the films, including a change of water wettability under the effect of illumination and photocatalytic activity, were studied. A substantial decrease of water contact angle was observed upon the irradiation of the films with ultraviolet (UV) light. The largest increase of water wettability was obtained for the surfaces of the films exhibiting the highest value of index of refraction. Testing of the photo-catalytic activity of the titanium oxide films comprised UV light-induced decomposition of benzene and aniline dissolved in water and bactericidal action against the Escherichia coli strain DH5α. The largest bactericidal efficiency was observed in the case of the film characterized by the highest index of refraction. Auger Electron Spectroscopy measurements have shown that the film composition is that of a nearly stoichiometric TiO₂, with a small chlorine contamination.     

High-temperature anomalies of dielectric constant in TiO2 thin films

Anatase and rutile TiO₂ thin films were prepared by chemical vapor deposition with precursors Ti(OPrⁱ)₄ and Ti(dpm)₂(OPrⁱ)₂ (dpm = 2,2,6,6-tetramethylheptane-3,5-dione and Prⁱ = isopropyl), respectively. The dielectric properties of TiO₂ thin films have been studied in 20-1100 K temperature range in air, in controlled Ar/O₂ atmospheres, and in vacuum with silicon-based metal-insulator-semiconductor Au/TiO₂/Si capacitors. High-temperature (T_c ∼ 980 K) anomalous behavior of dielectric constant was observed in both anatase and rutile TiO₂ thin films.     

Characterization of TiO2 thin films prepared by electrolytic deposition for lithium ion battery anodes

The electrolytic deposition of TiO₂ thin films on platinum for lithium batteries is carried out in TiCl₄ alcoholic solution and the films are subsequently annealed. The as-prepared films are amorphous TiO(OH)₂·H₂O, transformed into anatase TiO₂ at 350 °C, and then gradually into rutile TiO₂ at 500 °C. Cyclic voltammograms show oxidation and reduction peaks at 2.20 and 1.61 V, respectively, corresponding to charge and discharge plateaus at 1.98 and 1.75 V vs. Li⁺/Li. The specific capacity decreases with increasing current density for film of 128-nm thickness in the initial discharge. It is observed that the diffusion flux of Li⁺ insertion/extraction into/from TiO₂ controls the reaction rate at higher current densities. Consequently, at low film thickness, high discharge capacity (per weight) is found for the initial cycle at a current density of 10 μA cm^− 2. However, the capacity of prepared films in various thicknesses approach 103 ± 5 mAh g^− 1 after 50 cycles, since the formation of cracks for thicker films offers shorter diffusion paths for Li⁺. In addition, TiO₂ films show electrochromic properties during lithiation and delithiation.     

Characterization of thin TiO2 films prepared by plasma enhanced chemical vapour deposition for optical and photocatalytic applications

Thin titanium oxide films were deposited using a radio frequency (RF) plasma enhanced chemical vapour deposition method. Their optical properties and thickness were determined by means of ultraviolet-visible absorption spectrophotometry. Films of the optical parameters very close to those of titanium dioxide have been obtained at the high RF power input. Their optical quality is high enough to allow for their use in a construction of stack interference optical filters. At the same time, these materials exhibit strong photocatalytic effects. The results of structural analysis, carried out by Raman Shift Spectroscopy, show that the coatings posses amorphous structure. However, Raman spectra of the same films subjected to thermal annealing at 450 °C disclose an appearance of a crystalline form, namely that of anatase. Surface morphology of the films has also been characterized by Atomic Force Microscopy revealing granular, broccoli-like topography of the films.     

Low-temperature deposition of crystallized TiO2 thin films

Crystallized TiO₂ thin films were deposited on a non-heated substrate by two methods: oxygen-ion-assisted reactive evaporation (ORE) and high-rate reactive sputtering (HRS) using two sputtering sources. When the films were deposited on an unheated glass substrate, amorphous films were initially grown on the substrate in case of both deposition methods, although an increase in oxygen-ion energy above 600 eV led to a growth of a crystallized layer on the amorphous films in the case of ORE. When the films were deposited by HRS on a crystallized TiO₂ seed layer, homo-epitaxial growth was observed, and crystallized TiO₂ films with an excellent hydrophilic property were obtained on unheated substrate. In contrast, when the films were deposited by ORE, amorphous films were initially grown on the crystallized TiO₂ seed layer in a similar manner to the deposition of films on a glass substrate, and homo-epitaxial growth was not observed. These results suggest that the large kinetic energy of titanium atoms arriving at the substrate during HRS is a key factor in promoting epitaxial growth of the TiO₂ film at low temperature.     

Study on TiO2 thin films grown by advanced pulsed laser deposition on ITO

TiO₂ films were grown by an advanced pulsed laser deposition method (PLD) on ITO substrates to be used as functional electrodes in the manufacturing of solar cells. A pure titanium target (99.99%) was irradiated by a Nd:YAG laser (355 and 532 nm, 5 ns, 35 mJ, 3 J/cm²) in an oxygen atmosphere at different pressures (20-160 mTorr) and at room temperature. After deposition, the films were subjected to an annealing process at 350 °C. The film structure, surface morphology, thickness, roughness, and optical transmission were investigated. Regardless of the wavelength used, the films deposited at room temperature presented only Ti₂O and TiO peaks. After thermal treatment, the TiO₂ films became strongly crystalline, with a tetragonal structure and in the anatase phase; the threshold temperature value was 250 °C. The deposition rate was in the range of 0.035-0.250 nm/pulse, and the roughness was 135-305 nm. Optical transmission of the films in the visible range was between 40% and 60%.     

Dopamine/TiO2 hybrid thin films prepared by the liquid phase deposition method

Liquid phase deposition method is applied to one-step production of a hybrid material composed by dopamine(DA) and TiO₂ anatase. An optimized amount of the enediol derivative is added to a fluoride titania precursor aqueous solution in order to entrap this modifier within the growing TiO₂, yielding a DA/TiO₂ nanocomposite material. Uniform, well-adhered and brown-colored thin films are deposited on indium tin oxide covered glass substrate. The DA/TiO₂ hybrid material has been characterized by infrared spectroscopy, electronic microscopy, X-ray diffraction and UV-vis spectroscopy. The formation of the hybrid material seems to be reasonably explained by linkage of different TiO₂ nanocrystallites taking advantage of both enediol and amine groups of DA.     

Epitaxial growth of RuO2 thin films by metal-organic chemical vapor deposition

Conductive RuO₂ thin films were epitaxially grown on LaAlO₃(100) and MgO(100) substrates by metal-organic chemical vapor deposition (MOCVD). The deposited RuO₂ films were crack-free, and well adhered to the substrates. The RuO₂ film is (200) oriented on LaAlO₃ (100) substrates at deposition temperature of 600°C and (110) oriented on MgO(100) substrates at deposition temperature of 350°C and above. The epitaxial growth of RuO₂ on MgO and LaAlO₃ is demonstrated by strong in-plane orientation of thin films with respect to the major axes of the substrates. The RuO₂ films on MgO(100) contain two variants and form an orientation relationship with MgO given by RuO₂(110)//MgO(100) and RuO₂[001]//MgO[011]. The RuO₂ films on LaAlO₃(100), on the other hand, contain four variants and form an orientation relationship with LaAlO₃ given by RuO₂(200)//LaAlO₃(100) and RuO₂[011]//LaAlO₃[011]. Electrical measurements on the RuO₂ thin films deposited at 600°C show room-temperature resistivities of 40 and 50 μΩ cm for the films deposited on the MgO and LaAlO₃ substrates, respectively.     

TiO2 thin films for dyes photodegradation

The aim of the present study is to investigate the influence of the TiO₂ specific surface (powder, film) on the photocatalytic degradation of methyl orange. Porous TiO₂ films were deposited on transparent conducting oxide substrates by spray pyrolysis deposition. The films were characterized by X-ray diffraction (XRD), Scanning Electronic Microscopy, and the UV-Vis spectroscopy. The XRD spectra of nanoporous TiO₂ films revealed an anatase, crystalline structure that is known as the most suitable structure in photocatalysis. The average thickness of the films was 260 nm and the measured band gap is 3.44 eV. The influence of the operational parameters (dye concentration, contact time) on the degradation rate of the dye on TiO₂ was examined. There were calculated the kinetic parameters and the process efficiency. Using thin films of TiO₂ is technologically recommended but raises problems due to lowering the amount of catalyst available for the dye degradation.     

Structural and electrochromic properties of TiO2 thin films prepared by metallorganic chemical vapor deposition

Titanium dioxide thin films were deposited by Metallorganic Chemical Vapor Deposition at substrate temperatures ranging from 250 °C to 450 °C over soda lime glass and indium tin oxide coated glass substrates. X-ray diffraction studies show that films have a crystalline anatase structure at all the deposition temperatures. Particle size decreases and texture changes with the increase in substrate temperature. X-ray photoelectron spectroscopy confirms the appearance of a new well resolved state in the core level of Ti 2p spectrum shifted by 1.16 eV to lower binding energy due to the reduction of Ti^+ 4 to Ti^+ 3 upon litheation. Chronoamperometery, cyclic voltammetery and in situ UV-Vis spectrophotometeric studies were carried out on the prepared samples. Particle size and crystallinity control the electrochromic performance. The 350 °C film shows the highest ion storage capacity and the highest optical modulation along with an appreciable band gap broadening.     

Single-source chemical vapor deposition of clean oriented Al2O3 thin films

Clean oriented Al₂O₃ thin film with a dominant Al₂O₃ <1 1 3> plane was deposited on Si <1 0 0> substrate at 550 °C, by single-source chemical vapor deposition (CVD) using aluminium(III) diisopropylcarbamate, Al₂(O₂CNⁱPr₂)₆. This process represents a substantial reduction in typical CVD film growth temperatures which are typically > 1000 °C. Through the studies of thermal stability of this precursor, we propose a specific β-elimination decomposition pathway to account for the low temperature of the precursor decomposition at the substrate, and for the lack of carbon impurity byproducts in the resulting alumina films that are characterized using X-ray photoelectron spectroscopy and depth profiling.     

Low-temperature growth and orientational control in RuO2 thin films by metal-organic chemical vapor deposition

For growth temperatures in the range of 275°C to 425°C, highly conductive RuO₂ thin films with either (110)- or (101)-textured orientations have been grown by metal-organic chemical vapor deposition (MOCVD) on both SiO₂/Si(001) and Pt/Ti/SiO₂/Si(001) substrates. Both the growth temperature and growth rate were used to control the type and degree of orientational texture of the RuO₂ films. In the upper part of this growth temperature range ( 350°C) and at a low growth rate (< 3.0 nm/min.), the RuO₂ films favored a (110)-textured orientation. In contrast, at the lower part of this growth temperature range ( 300°C) and at a high growth rate (> 3.0 nm/min.), the RuO₂ films favored a (101)-textured orientation. In contrast, higher growth temperatures (> 425°C) always produced randomly-oriented polycrystalline films. For either of these low-temperature growth processes, the films produced were crack-free, well-adhered to the substrates, and had smooth, specular surfaces. Atomic force microscopy showed that the films had a dense microstructure with an average grain size of 50–80 nm and a rms. surface roughness of 3–10 nm. Four-probe electrical transport measurements showed that the films were highly conductive with resistivities of 34–40 μΩ-cm (at 25°C).     

Metalorganic chemical vapor deposition of Er2O3 thin films: Correlation between growth process and film properties

Er₂O₃ thin films have been grown by metalorganic chemical vapor deposition (MOCVD) at 600 °C on different substrates, including glass, Si (100) and sapphire (0001) using tris(isopropylcyclopentadienyl)erbium and O₂. The effects of growth parameters such as the substrate, the O₂ plasma activation and the temperature of organometallic precursor injection, on the nucleation/growth kinetics and, consequently, on film properties have been investigated. Specifically, very smooth (111)-oriented Er₂O₃ thin films (the root mean square roughness is 0.3 nm) are achieved on Si (100), α-Al₂O₃ (0001) and amorphous glass by MOCVD. Growth under O₂ remote plasma activation results in an increase in growth rate and in (100)-oriented Er₂O₃ films with high refractive index and transparency in the visible photon energy range.     

Thermal properties of TiO2 films grown by atomic layer deposition

We study the thermal properties of amorphous TiO₂ thin films of various thicknesses t, grown by atomic layer deposition. The thermo-optic coefficient dn/dT and the temperature coefficient dρ/dT of film density ρ are determined from ellipsometric data in wavelength range 380 < λ < 1800 nm with the Cauchy model and the Lorentz-Lorenz relation. It is found that dn/dT exhibits negative values for films with t < 150 nm and positive values for thicker films, while no significant changes in the two coefficients take place if t < 200 nm. A qualitative physical explanation based on porosity of the thin films is suggested. Films with t = 60 nm are illustrated in detail at λ = 640 nm: the room-temperature values of the coefficients are found to be dn/dT = − 3.1 × 10^− 5 °C^− 1 and dρ/dT = − 4.8 × 10^− 5g cm^− 3° C^− 1.     

Growth and characterization of nitrogen-doped TiO2 thin films prepared by reactive pulsed laser deposition

Nitrogen-doped titanium dioxide (TiO₂) thin films were grown on (001) SiO₂ substrates by reactive pulsed laser deposition. A KrF* excimer laser source (λ = 248 nm, τ_FWHM ≅ 10 ns, ν = 10 Hz) was used for the irradiations of pressed powder targets composed by both anatase and rutile phase TiO₂. The experiments were performed in a controlled reactive atmosphere consisting of oxygen or mixtures of oxygen and nitrogen gases. The obtained thin film crystal structure was investigated by X-ray diffraction, while their chemical composition as well as chemical bonding states between the elements were studied by X-ray photoelectron spectroscopy. An interrelation was found between nitrogen concentration, crystalline structure, bonding states between the elements, and the formation of titanium oxinitride compounds. Moreover, as a result of the nitrogen incorporation in the films a continuous red-shift of the optical absorption edge accompanied by absorption in the visible spectral range between 400 and 500 nm wavelength was observed.     

Microanalysis of Pd and V-doped TiO2 thin films prepared by sputtering

Thin films of TiO₂ doped with vanadium and palladium, prepared by the magnetron sputtering method, were studied by means of X-ray diffraction (XRD), Scanning Electron Microscopy with Energy Disperse Spectrometer (SEM-EDS) and Atomic Force Microscopy (AFM). Investigations have brought important information about microstructure due to dopant incorporation in the TiO₂ host lattice. Directly after deposition thin films were XRD-amorphous and SEM investigations did not reveal details on the microstructure. Analysis of the topography of prepared thin films required application of Atomic Force Microscope. The AFM images show that as-deposited sample was dense with grain sizes varied in the range of 5.5 nm-10 nm, that indicated high quality nanocrystalline behavior. Additional annealing results in the formation of three phases in the thin film, e.g. (Ti,V)O₂ — solid solution, PdO and metallic inclusions of Pd. SEM-EDS system allowed analysis of the elemental composition, especially the V one, which lines have not been evidenced in the XRD diffraction pattern. EDS maps show homogenous distribution of elements Ti, O, V, Pd in prepared thin films.     

Hydrophilicity of anatase TiO2/Cr-doped TiO2 thin films with different band gaps

Based on the concept that the electron-hole separation effect caused by a different band-gap structure would improve its hydrophilicity, anatase-TiO₂/Cr-doped TiO₂ thin films were synthesized by DC magnetron sputtering. The optical band gaps of TiO₂ thin films decreased from 3.23 to 2.95 eV with increasing Cr-doping content. Multilayer TiO₂ thin films with different band gaps exhibited a superhydrophilicity under UV illumination. In particular, in anatase TiO₂ (3.23 eV)/4.8% Cr-doped TiO₂ (2.95 eV), the hydrophilicity, which indicated a contact angle of less than 20°, lasted for 48 h in the dark after UV illumination was discontinued. This outstanding result has rarely been reported for TiO₂ thin films, which confirmed that the prominent superhydrophilicity of anatase TiO₂/Cr-doped TiO₂/glass could be attributed to the retardation of electron-hole recombination caused by the band-gap difference.     

Chemical and electrical characteristics of low temperature plasma enhanced CVD silicon oxide films using Si2H6 and N2O

Silicon oxide films have been deposited at low temperatures in the range of 30–250 °C using Si₂H₆ and N₂O by conventional plasma enhanced chemical vapor deposition technique. The dependencies of deposition temperatures on the film properties are studied. The leakage current and the etch rate of these low temperature films compare favorably to films deposited by silane and TEOS at higher temperatures, respectively.     

Hydrophilicity on carbon-doped TiO2 thin films under visible light

Carbon-doped TiO₂ thin films in the anatase phase with dopant concentrations of 1.1, 0.9, and 0.7 mol% were fabricated by a radio-frequency magnetron sputtering method. Dopant carbons were located at the oxygen sites. Carbon substitution caused the absorbance edge and/or the shoulder of TiO₂ to shift to a higher wavelength region. Carbon-doped TiO₂ thin films underwent a hydrophilic conversion when irradiating with visible light (400–530 nm). The hydrophilic property under visible light was inferior to that under ultraviolet light, which is explained by considering that the visible light sensitivity originates from the localized C 2p formed in the band-gap.     

High rate deposition of insulating TiO2 and conducting ITO films for optical and display applications

An innovative reactive pulse magnetron sputtering (PMS-) system allowing to change the pulse mode (unipolar, bipolar or pulse packet) and the pulse parameters (duty cycle, frequency) of the discharge has been used to deposit different materials at high deposition rates. The new pulse packet mode combines the two fundamental pulse modes of unipolar and bipolar by applying ‘packets’ of unidirectional pulses between the two targets and changing the polarity of the discharge after each packet. As a new pulse parameter, the number of pulses of each packet can be varied. The advantages of the PMS-system were demonstrated by the reactive deposition of insulating titanium oxide (TiO₂) and conducting indium tin oxide (ITO) films. The TiO₂ layers sputtered on unheated substrates at deposition rates of up to 50 nm*m/min exhibited amorphous, mixed anatase/rutile or rutile structure in dependence of the pulse mode and the pulse parameters that were applied. Hardness, Young's modulus, roughness and refractive index varied in dependence of the structure of the layers. Although the sputtering from ceramic target is the most common coating technique for ITO, another economical way is the use of metallic InSn-targets. The effect of various pulse modes on the optical and electrical properties of reactively sputtered ITO layers on float glass was investigated. The specific resistivity of ITO was minimized by process parameter optimisation.