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1.
SiO2 thin films were deposited on the inner wall of a narrow commercial poly(propylene) tube with inner/outer diameters of 1.0 mm/3.0 mm by plasma-enhanced chemical vapor deposition using He or Ar carrier gases and tetraethoxysilane (TEOS)/O2 feedstock gases at high pressures from 30 kPa to atmospheric pressure and at room temperature. A glow μplasma was generated inside the tube by a radio frequency (RF 13.56 MHz) capacitively coupled discharge. X-ray photoelectron spectra and infrared spectra revealed that the inner surface of the plasma-treated tube was covered by a SiO2 film. Scanning electron microscopy images indicated that the film produced by He/TEOS/O2 μplasma had a smooth surface whereas the surface of the film produced by Ar/TEOS/O2 μplasma appeared granulated. Typical deposition rates of approximately 300 nm/min were obtained by He/TEOS/O2 μplasma at atmospheric pressure and a RF power of 11 W. 相似文献
2.
Thin film coatings on capillary inner walls by microplasma 总被引:1,自引:0,他引:1
Hiroyuki Yoshiki 《Vacuum》2009,84(5):559-115
The effect of a strong static magnetic field on a capillary microplasma generated by RF (13.56 MHz) excitation using the parallel-plate electrodes was studied. If the magnetic field is perpendicular to both RF electric field and a capillary axis and also the Larmor radius of an electron rL is sufficiently smaller than both the electron mean free path λe and a discharge gap dg, the oscillating E × B drift will appear effectively in a parallel direction with a capillary axis. It was found that a magnetized capillary microplasma generates under the condition of rL < λe and rL < dg. Next, to examine the effect of a strong magnetic field on thin film deposition, SiO2 thin film coating on the inner wall of a poly(propylene) (PP) narrow tube using tetraethoxysilane as the precursor was demonstrated under the condition with/without magnetic field of 0.4 T at atmospheric pressure. SEM images and XPS spectra showed that SiO2 films with a smooth surface were prepared on the tube inner wall in the both cases. 相似文献
3.
Tong Liang 《Thin solid films》2009,517(24):6689-6693
Pb0.5Sr0.5TiO3 thin films were prepared on Pt/TiO2/SiO2/Si and LaNiO3 (LNO)/Si substrates by using chemical solution deposition technique, and a layer-by-layer annealing method was used in an attempt to improve the dielectric properties of the thin films. The structure, dielectric, and ferroelectric properties of the thin films were investigated. Improved dielectric properties of the thin films were clearly confirmed: the dielectric constant and dielectric loss for the films on Pt/TiO2/SiO2/Si substrates annealed at 650 °C were 1064 and 0.027, respectively, at 1 kHz, with a dielectric tunability of more than 50%; similarly, the films prepared on LNO/Si substrates, showed a high dielectric constant of 1280 and a low dielectric loss of 0.023, at 1 kHz. P-E hysteresis loop measurements indicated that the remanent polarization and coercive field for the films on Pt/TiO2/SiO2/Si substrates annealed at 650 °C were 15.7 μC/cm2 and 51 kV/cm, respectively. 相似文献
4.
SiO2-like thin films were deposited at a low temperature (< 50 °C) by a remote-type, atmospheric pressure plasma enhanced chemical vapor deposition (AP-PECVD) using a pin-to-plate-type, dielectric barrier discharge with gas mixtures containing hexamethyldisilazane (HMDS)/O2/He/Ar. The film characteristics were investigated according to the HMDS and O2 flow rates. To obtain a more SiO2-like thin film, an adequate combination of HMDS and oxygen flow rates was required to remove the -(CH3)x bonding in the HMDS and to oxidize the Si in HMDS effectively. At the optimized flow rates, the surface roughness of the SiO2-like thin film was also the lowest. By using HMDS (50 sccm) and O2 (500 sccm) flow rates in the gas mixture of HMDS/O2/He (2 slm)/Ar (600 sccm), SiO2-like thin films with a low impurity (< 6.35% C) were obtained at a deposition rate of approximately 10.7 nm/min. 相似文献
5.
Min-Chun Pan Tzon-Han Wu Tuan-Anh Bui Wen-Ching Shih 《Journal of Materials Science: Materials in Electronics》2012,23(2):418-424
The influence of fabrication parameters on ZnO film properties has been analyzed through conducting several experiment processes
to develop an appropriate deposition condition for obtaining highly c-axis textured films. A transducer with the structure of Al/ZnO/Al/Si was fabricated at low deposition rate and under a temperature
of 380 °C in a mixture of gases Ar:O2 = 1:3, and RF power of 178 W. Pt/Ti was employed as the bottom electrode of the transducer fabricated in a suitable substrate
temperature, which starts increasing at 380 °C with an increment of 20 °C for each 2 h stage of the deposition. Highly c-axis textured ZnO films have been successfully deposited on Pt/Ti/SiO2/Si substrate under feasible conditions, including RF power of 178 W, substrate temperature of 380 °C, deposition pressure
of 1.3 Pa and Ar:O2 gas flow ratio of 50%. These conditions have been proposed and confirmed through investigating the influences of the sputtering
parameters, such as substrate temperature, RF power and Ar:O2 gas flow ratio, on the properties of ZnO films. 相似文献
6.
Nano-particle thin films of tin oxides were deposited on SiO2 substrates by using radio frequency (RF) magnetron sputtering with various substrate temperatures, sputtering powers and oxygen partial pressures. The tin oxides thin films were then investigated by X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM). XPS data suggested that the deposited tin oxides thin films are almost made up of half of SnO2 and half of SnO. The oxygen partial pressure nearly does not affect the chemical stoichiometry of the thin films in our deposition conditions. SEM results showed that the tin oxides thin films were formed by nano-particles with size of about 60 nm. Sputtering power has a strong influence on the particle size of the thin films. Increase of sputtering power will enlarge the size of the particles. 相似文献
7.
Wenli Yang 《Thin solid films》2006,515(4):1708-1713
Amorphous TiO2 thin films were formed by plasma-enhanced chemical vapor deposition (PECVD) from mixtures of titanium IV isopropoxide (Ti(O-i-C3H7)4) and oxygen. The deposition rate was found to be weakly activated, with an apparent activation energy of 4.5 kJ/mol. The deposition rate increased with equivalence ratio and decreased with plasma power. This dependence on atomic oxygen density was consistent with behavior observed in other metal oxide PECVD systems. Metal-insulator-silicon devices were fabricated, and characterized using capacitance-voltage measurements. The apparent dielectric constant of the TiO2 thin films increased from 15 to 82 with film thickness. The observed variations were consistent with the formation of an interfacial SiO2 layer. Assuming that a TiO2/SiO2 bilayer behaves as two capacitors in series, an intrinsic TiO2 dielectric constant of 82 ± 10 and an interfacial SiO2 layer thickness of 3 ± 1 nm were extracted from electrical measurements. 相似文献
8.
In this study, we monitored the HfAlO3 etch rate and selectivity to SiO2 as a function of the etch parameters (gas mixing ratio, RF power, DC-bias voltage, and process pressure). A maximum etch rate of 52.6 nm/min was achieved in the 30% BCl3/(BCl3 + Ar) plasma. The etch selectivity of HfAlO3 to SiO2 reached 1.4. As the RF power and the DC-bias voltage increased, the etch rate of the HfAlO3 thin film increased. As the process pressure decreased, the etch rate of the HfAlO3 thin films increased. The chemical state of the etched surfaces was investigated by X-ray Photoelectron Spectroscopy (XPS). According to the results, the etching of HfAlO3 thin films follows the ion-assisted chemical etching mechanism. 相似文献
9.
Kaibin Ruan 《Thin solid films》2008,516(16):5248-5251
(Bi3.2La0.4Nd0.4)Ti3O12 (BLNT) thin films were prepared on Pt/Ti/SiO2/Si substrates by using chemical solution deposition technique, and the effects of annealing temperatures in the range of 550-750 °C on structure and electrical properties of the thin films were investigated. X-ray diffraction analysis shows that the thin films have a bismuth-layered perovskite structure with preferred (117) orientation. The surface morphology observation by field-emission scanning electron microscopy confirms that films are dense and smooth with uniformly distributed grains. The grain size of the thin films increases with increasing annealing temperature; meanwhile, the structural distortion of the thin films also increases. It was demonstrated that the thin films show good electrical properties. The dielectric constant and dielectric loss are 191 and 0.028, respectively, at 10 kHz for the thin film annealed at 600 °C, and the 2Pr value of the thin film annealed at 700 °C is 20.5 μC/cm2 at an electric field of 500 kV/cm. 相似文献
10.
《Materials Research Bulletin》2006,41(12):2349-2356
In this paper, ZnSe/SiO2 thin films were prepared by sol–gel process. X-ray diffraction results indicate that the phase structure of ZnSe particles embedded in SiO2 thin films is sphalerite (cubic ZnS). The dependence of ellipsometric angle ψ on wavelength λ of ZnSe/SiO2 thin films was investigated by spectroscopic ellipsometers. The optical constant, thickness, porosity and the concentration of ZnSe/SiO2 composite thin films were fitted according to Maxwell–Garnett effective medium theory. The thickness of ZnSe/SiO2 thin films was also measured by surface profile. The photoluminescence properties of ZnSe/SiO2 thin films were investigated by fluorescence spectrometer. The photoluminescence results reveal that the emission peak at 487 nm (2.5 eV) excited by 395 nm corresponds to the band-to-band emission of sphalerite ZnSe crystal (2.58 eV). Strong free exciton emission and other emission peaks corresponding to ZnSe lattice defects are also observed. 相似文献
11.
D. Fasquelle A. Ziani C. Le Paven-Thivet L. Le Gendre J.C. Carru 《Materials Letters》2011,65(19-20):3102-3104
Oxynitride LaTiO2N thin films were deposited on Pt/Ti/SiO2/Si substrates by RF reactive sputtering. X-ray diffraction analysis highlighted the polycrystalline structure of the films, while SEM showed regular, ordered grains with smooth surface. Our films gave interesting values of electric tunability compared to oxide films, especially the thinner one with an exceptional value of 72% obtained under a low voltage of only 3.3 V. 相似文献
12.
Wen-Ching Shih Ming-Han Chiang 《Journal of Materials Science: Materials in Electronics》2010,21(8):844-848
In this paper, BaTiO3 thin films were prepared by RF magnetron sputtering on MgO substrates and their properties such as the crystal structure
and optical waveguide properties were investigated. The optimum deposition parameters, such as substrate temperature, deposition
pressure, gas flow ratio, the RF power and the after annealing temperature, were obtained in order to get the best BaTiO3 film quality. The XRD results show that highly c-axis textured BaTiO3 thin films were successfully grown on MgO substrate. Films obtained under the optimum deposition parameters, substrate temperature
of 650°C, RF power of 50 W, deposition pressure 18 mTorr and gas flow ratio O2/(Ar+ O2) of 15% namely, reaches a full width at half maximum intensity (FWHM) of BaTiO3 (002) XRD peak of 0.25°. The FWHM of BaTiO3 (002) XRD peak was further reduced to 0.24° via post-treatment with furnace annealing (at 800°C for 2 h) which indicates
the film crystal quality is further improved. The bright and sharp TE modes measured by m-line spectroscopy of the BaTiO3 film were observed indicating its possible application in optical waveguide. 相似文献
13.
Yu-Hsiang Hsu John Lin William C. Tang 《Journal of Materials Science: Materials in Electronics》2008,19(7):653-661
This paper demonstrates the substrate dependency of the c-axis zinc oxide growth in radio-frequency sputtering system. Different deposition conditions were designed to study the influences
of Si, SiO2/Si, Au/Ti/Si, and Au/Ti/SiO2/Si substrates on the piezoelectric and crystalline qualities of the ZnO thin films. Experimental results showed that the
multilayer of Au/Ti/SiO2/Si-coated silicon substrate provided a surface that facilitated the growth of ZnO thin film with the most preferred crystalline
orientation. The 1.5 μm-thick thermally grown amorphous silicon dioxide layer effectively masked the crystalline surface of
the silicon substrate, thus allowing the depositions of high-quality 20 nm-thick titanium adhesion layer followed by 150 nm-thick
of gold thin film. The gold-coated surface allowed deposition of highly columnar ZnO polycrystalline structures. It was also
demonstrated that by lowering the deposition rate at the start of sputtering by lowering RF power to less than one-third of
the targeted RF power, a fine ZnO seed layer could be created for subsequent higher-rate deposition. This two-step deposition
method resulted in substantially enhanced ZnO film quality compared to single-step approach. The influence of stress relaxation
by annealing was also investigated and was found to be effective in releasing most of the residual stress in this layered
structure. 相似文献
14.
Transparent silicon oxide films were deposited on polyethylene terephthalate substrates by means of reactive magnetron sputtering with a mixture of argon and oxygen gases. The influences of process parameters, including the oxygen flow ratio, work pressure, radio frequency (RF) power density and deposition time, on the film properties, such as: deposition rate, morphology, surface roughness, water vapor/oxygen transmission rate and flexibility, were investigated. The experimental results show that the SiOx films deposited at RF power density of 4.9 W/cm2, work pressure of 0.27 Pa and oxygen flow ratio of 40% have better performance in preventing the permeation of water vapor and oxygen. Cracks are produced in the SiOx films after the flexion of more than 100 cycles. The minimum transmission rates of water vapor and oxygen were found to be 2.6 g/m2 day atm and 15.4 cc/m2 day atm, respectively. 相似文献
15.
In the present study, Ag/SiO2–TiO2 thin films on ceramic tiles with glazed surface were successfully prepared by a liquid phase deposition method (LPD) at a
low temperature. The Ag/SiO2–TiO2 thin films obtained were homogenous, well adhered and colored by interference of reflected light. The films were characterized
by scanning electron microscopy and X-ray diffraction. From these analysis data, it was found that silver (Ag) nanoparticles
were trapped in SiO2–TiO2 matrix. The antibacterial effects of Ag/SiO2–TiO2 thin films against S. aureus and E. coli were examined by the so-called antibacterial-drop test. The bactericidal activity for the above bacteria cells was estimated
by relative number of bacteria survived calculated from the number of viable cells which form colonies on the nutrient agar
plates. The Ag/SiO2–TiO2 thin films had an excellent antibacterial performance. Atomic absorption spectroscopy (AAS) was used for the quantitative
determination of the Ag ion concentration releasing from the Ag/SiO2–TiO2 thin film. The releasing rate of Ag ions from the Ag/SiO2–TiO2 film is 0.123 μg/mL during 192 h. The antibacterial effect of Ag/SiO2–TiO2 thin film before and after aging in a weathering chamber for 48 h was compared and the results show that the antibacterial
activity is not compromised after weathering. 相似文献
16.
《Science and Technology of Advanced Materials》2002,3(3):257-260
Ge–SiO2 thin films were prepared by the RF magnetron sputtering technique on p-Si substrates from a Ge–SiO2 composite target. The as-deposited films were annealed in the temperature range of 300–1000 °C under nitrogen ambience. The structure of films was evaluated by X-ray diffraction, X-ray photoemission spectroscopy and Fourier transform infrared absorption spectroscopy. Results show that the content of Ge and its oxides in the films change with increasing annealing temperature (Ta), the photoluminescence (PL) characteristics are closely dependent on the contents of Ge and its oxides in SiO2 matrix. The dependence observed strongly suggests that the PL peak at 394 nm is related to the existence of GeO and 580 nm to that of Ge nanocrystal (nc-Ge) in the films. 相似文献
17.
F. Gao 《Thin solid films》2007,515(13):5366-5373
Bi0.8La0.2FeO3 thin films on Pt/TiO2/SiO2/Si substrates at various substrate temperatures from 500 °C to 750 °C are prepared by pulsed laser deposition, and their microstructures and ferroelectric/magnetic properties are carefully investigated using various techniques. It is observed that the crystallographic orientation and Fe-ion valence state depend significantly on the substrate temperature, which consequently influences considerably on the ferroelectric and magnetic properties of the thin films. A considerable improvement of the ferroelectric and magnetic properties of the thin films can be achieved by optimizing the substrate temperature for deposition. 相似文献
18.
Feng Shi 《Journal of Materials Science: Materials in Electronics》2011,22(9):1290-1296
Radio frequency (RF) magnetron sputtering method was applied to prepare dielectric ceramic thin films on SiO2 (110) substrates using (Ba0.3Sr0.7)(Zn1/3Nb2/3)O3 microwave dielectric ceramics as target. The samples were deposited at different sputtering powers in Ar atmosphere. In particular,
the microstructure and morphology of the thin films were investigated as a function of sputtering powers by X-ray diffraction
(XRD), X-ray photoelectron spectroscope (XPS), scanning electron microscopy (SEM), atomic force microscopy (AFM) and transmission
electron microscopy (TEM). The results show that the thin films are polycrystalline and the sputtering power significantly
influences the surface morphology and microstructure of the thin films. On increasing the sputtering power, the crystallinity
improves and the grain size and roughness of the thin films reach maximum values at 200 W. 相似文献
19.
Ytterbium-doped Bi4Ti3O12 (Bi3.4Yb0.6Ti3O12, BYT) ferroelectric thin films were successfully deposited on Pt(111)/Ti/SiO2/Si(100) substrates by chemical solution deposition (CSD). X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to identify the crystal structure, the surface and cross-section morphology of the deposited ferroelectric films. Structure evolution and ferroelectric properties of the as-prepared thin films annealed under different temperatures (600 °C-750 °C) were studied in detail. Additionally, the mechanism concerning the dependence of electrical properties of the BYT ferroelectric thin films on the annealing temperature was discussed. 相似文献
20.
Cui Chuanwen Shi Feng Li Yuguo Wang Shuyun 《Journal of Materials Science: Materials in Electronics》2010,21(4):349-354
The perovskite structure microwave dielectric ceramic thin films have been deposited by radio frequency (RF) magnetron sputtering
on SiO2(110) substrates. Subsequently, orthogonal analysis has been adopted to optimize the process parameters. The experimental
results indicate that sputtering pressure has the greatest impact on comprehensive evaluation indicators such as the film
quality, whereas sputtering power has a lower effect; the ratio of O2/Ar and substrate temperature have the least impact on the process. Thus, the optimal process parameters to prepare perovskite
structure dielectric thin films by RF magnetron sputtering are as follows: 200 W of sputtering power, 0.25 Pa of sputtering
pressure, Ar as working gas, and substrate temperature of 610 °C. 相似文献