化学水浴沉积时间对CdS薄膜性质的影响

采用CBD法在醋酸镉溶液体系中制备CdS半导体薄膜,通过XRD、XRF、SEM和光学透过率谱等测试手段研究了沉积时间对CdS薄膜沉积过程和性质的影响.结果表明,随着沉积时间的增加,薄膜增厚;S/Cd原子比增加,但都为富Cd的CdS薄膜;XRD研究表明,薄膜结构由立方、六方混合相向立方相转变,(111)方向成为择优生长方向;SEM研究表明,随沉积时间增加,薄膜变致密,薄膜表面出现的白色附着颗粒增多,尺寸增大;沉积时间对薄膜的光学性质也有很大的影响,随着沉积时间的增加薄膜透过率减小,而禁带宽度值增大.     

Nonlinear optical properties of laser deposited CuO thin films

In this work we investigate the third-order optical nonlinearities in CuO films by Z-scan method using a femtosecond laser (800 nm, 50 fs, 200 Hz). Single-phase CuO thin films have been obtained using pulsed laser deposition technique. The structure properties, surface image, optical transmittance and reflectance of the films were characterized by X-ray diffraction, Raman spectroscopy, scanning electron microscopy and UV-vis spectroscopy. The Z-scan results show that laser-deposited CuO films exhibit large nonlinear refractive coefficient, n₂ = − 3.96 × 10^− 17 m²/W, and nonlinear absorption coefficient, β = − 1.69 × 10^− 10 m/W, respectively.     

Structural and optical properties of CdS thin films grown by chemical bath deposition

Cubic cadmium sulphide (CdS) thin films with (111) preferential orientation were prepared by chemical bath deposition (CBD) technique, using the reaction between NH₄OH, CdSO₄ and CS(NH₂)₂. The films properties have been investigated as a function of bath temperature and deposition time. Structural properties of the obtained films were studied by X-ray diffraction analysis. The structural parameters such as crystallite size have been evaluated. The transmission spectra, recorded in the UV visible range reveal a relatively high transmission coefficient (70%) in the obtained films. The transmittance data analysis indicates that the optical band gap is closely related to the deposition conditions, a direct band gap ranging from 2.0 eV to 2.34 eV was deduced. The electrical characterization shows that CdS films' dark conductivities can be controlled either by the deposition time or the bath temperature.     

Transport phenomena in high performance nanocrystalline ZnO:Ga films deposited by plasma-enhanced chemical vapor deposition

Nanocrystalline gallium doped zinc oxide (ZnO:Ga) thin films were synthesized by plasma-enhanced chemical vapor deposition (PECVD). A statistical design of experiments (DOE) was employed to optimize electrical conductivity. A carrier concentration of 5.5×10²⁰/cm³ and a mobility of 15 cm²/V s yielding a resistivity of 7.5×10⁻⁴ Ω cm resulted from the conditions of high pressure, rf power, and electrode gap. X-ray diffraction showed that gallium doping had a profound impact on film orientation. Atomic force microscopy (AFM) revealed that the films were nanostructured, with an average grain size of 80 nm and a surface roughness of ∼2 nm. This unique morphology benefited optical transmission, but limited electrical performance. Average transmission across the visible spectrum was ∼93% as scattering losses were minimized. Temperature dependent Hall and optical transmission measurements demonstrated that structural defects and ionized impurities were equal contributors to electron scattering.     

Structural and optical properties of nanocrystalline CdS thin films prepared using microwave-assisted chemical bath deposition

Cadmium sulfide (CdS) nanocrystalline thin films were prepared using the microwave-assisted chemical bath deposition method onto glass substrates at 80 °C. Aqueous solutions of either cadmium chloride or cadmium acetate and thiourea were used as sources of Cd²⁺ and S²⁻ ions, respectively. Two sets of samples with different concentrations were prepared. A microwave oven was used as a heating source to synthesize the nanocrystalline CdS thin films. The prepared thin films had a good adhesion with no pinholes. These films were examined for their structural and surface morphologies by X-ray diffraction (XRD), scanning electron microscopy, and atomic force microscopy. The optical properties were investigated using UV-vis spectrophotometer, photoluminescence, and Raman spectroscopy. Particle size values obtained from XRD were compared with these calculated using effective mass models. The values of optical band gaps according to optical transmission measurements decreased as the ion source molar concentration increased.     

Optical studies on chemical bath deposited nanocrystalline CdS thin films

Nanocrystalline cadmium sulphide thin films were prepared by the chemical bath (CB) deposition using a mixed aqueous solution of cadmium chloride, thiourea, and ammonium chloride. The XRD patterns showed that the CdS films were of hexagonal phase with preferred (002) orientation. From ellipsometric measurements, the film thickness was found to be in order of 66 nm and the optical band gap was estimated to be 2.4 eV.     

The effect of sulfur concentration on the properties of chemical bath deposited CdS thin films

We study the structural, surface morphology and optical properties of chemical bath deposited (CBD) cadmium sulfide (CdS) thin films under the effect of variation of S/Cd ratio. CdS thin films have been successfully deposited by CBD technique with solutions containing S/Cd ionic concentration ratio of 5.0, 2.5, 1.0, 0.5 and 0.25. Single phase CdS, with a hexagonal structure, is observed for the concentration of S/Cd = 5.0, 2.5, 1.0 and 0.5 films while for the ratio of 0.25, the films exhibited a partially amorphous nature. These have been confirmed by X-ray diffraction (XRD), transmission and scanning electron microscopy (TEM and SEM) analyses. The band gaps of the films obtained by transmission and photoacoustic spectra are found to be in the range of 2.40 to 3.26 eV. The large variation of band gaps of the films with composition is discussed by employing quantum size effect phenomena. The transition levels of CdS are also studied using photoacoustic spectroscopy.     

Structural,electrical and optical properties of copper selenide thin films deposited by chemical bath deposition technique

A low cost chemical bath deposition (CBD) technique has been used for the preparation of Cu_2–xSe thin films on glass substrates. Structural, electrical and optical properties of these films were investigated. X-ray diffraction (XRD) study of the Cu_2–xSe films annealed at 523 K suggests a cubic structure with a lattice constant of 5.697 Å. Chemical composition was investigated by X-ray photoelectron spectroscopy (XPS). It reveals that absorbed oxygen in the film decreases remarkably on annealing above 423 K. The Cu/Se ratio was observed to be the same in as-deposited and annealed films. Both as-deposited and annealed films show very low resistivity in the range of (0.04–0.15) × 10^–5 -m. Transmittance and Reflectance were found in the range of 5–50% and 2–20% respectively. Optical absorption of the films results from free carrier absorption in the near infrared region with absorption coefficient of 10⁸ m^–1. The band gap for direct transition, E_g.dir varies in the range of 2.0–2.3 eV and that for indirect transition E_g.indir is in the range of 1.25–1.5 eV.     

Effects of complexing agent on CdS thin films prepared by chemical bath deposition

CdS films have been prepared by chemical bath deposition (CBD) without stirring using weak and strong complexing agents, i.e., ammonia and ethylenediaminetetraacetic acid (EDTA). The optical, structural, and morphological properties of chemical bath deposited CdS films have been investigated. When the complexing agent is ammonia, five peaks in the X-ray diffraction (XRD) patterns from the CdS film, respectively, correspond to the interplanar spacing of 3.5498, 3.3429, 3.1449, 2.0574, and 1.7487 Å, which are definitely ascribed to hexagonal structure; unfortunately, this hexagonal CdS film is with poor morphology and its optical property in the visible region is not desirable for the solar cells. While, when the complexing agent is EDTA, three diffraction peaks in the XRD patterns from the CdS film, respectively, correspond to the interplanar spacing of 3.1164, 2.6716, and 1.8507 Å, indicating that the film is of a cubic structure. Furthermore, the CdS film has good morphology and its optical property in the visible region is compliant to the requirements of solar cells.     

Characterization of (Al, Si)N films deposited by balanced magnetron sputtering

Hard and transparent nanocomposite (Al, Si)N films are attractive for optical applications. In this paper, experimental results will be reported on nanocomposite (Al, Si)N films prepared by balanced magnetron sputtering. Microstructure and properties of the films were systematically characterized as a function of Si content of the films. It is shown that the (Al, Si)N films are transparent and exhibit no absorption in a wide range of wavelengths from ~ 0.3 to ~ 9 µm, i.e. from ultraviolet to mid-infrared region. Maximum hardness exceeding 25 GPa has been obtained when the Si content of the films is above 25 at.% and the microstructure of the films undergoes a transformation from nanocrystalline to amorphous states. It is demonstrated that the microstructure detail of the films is different, as compared with that of the films prepared by using unbalanced magnetron sputtering, and the reasons for this discrepancy is discussed.     

Effect of temperature and deposition time on the optical properties of chemically deposited nanostructure PbS thin films

PbS nanocrystalline thin films were deposited on glass substrates using chemical bath technique at different solution temperatures and various deposition times. The thickness of the films was in the range 600-1000 nm. The structure and the crystallite size of these films were studied by X-ray diffraction. The optical properties, absorption, transmission, and reflection, as a function of thickness were measured. The influence of thermal treatment under various annealing temperatures on the optical properties for some deposited films was studied and analyzed.     

Effect of ammoniating temperature on morphologic and optical properties of GaN nanostructured materials

GaN nanostructured materials have been obtained on Si(111) substrates by ammoniating the Ga₂O₃/ZnO films at different temperature in a quartz tube. X-ray diffraction (XRD), Scanning electron microscope (SEM), and photoluminescence (PL) are used to analyze the structure, morphology and optical properties of GaN nanostructured films. The results show that their properties are investigated particularly as a function of ammoniating temperature. The optimally ammoniating temperature of Ga₂O₃ layer is 950 °C for the growth of GaN nanorods. These nanorods are pure hexagonal GaN wurtzite structure with lengths of about several micrometers and diameters of about 200 nm, which is conducive to the application of nanodevices. Finally, the growth mechanism is also briefly discussed.     

Effect of deposition conditions on the characteristics of ZnO-SnO2 thin films deposited by filtered vacuum arc

ZnO-SnO₂ thin films were deposited on microscope glass substrates by filtered vacuum arc deposition system. The effects of deposition conditions on film characteristics were studied using cathodes prepared with three different ratios of atomic concentrations of Zn to Sn. The micro and the macro properties of the films were investigated as a function of cathode composition, arc current, background oxygen deposition pressure, and deposition time. X-ray diffraction analysis indicated that deposited films were amorphous, independent of the cathode composition. The atomic concentration ratio of Zn to Sn in the film as determined by XPS analysis were 33.9%: 10.6%, 43.9%: 3.8%, 44.7%: 4.7% for 50%: 50%, 70%: 30% and 90%: 10% Zn-Sn alloy cathodes, respectively. Film transmission in the visible was 70 to 90%, affected by interference effects. The maximal and minimal values of the refractive index n and the absorption coefficient k in the visible were 2.11 to 1.94 and 0.07 to 0.001, respectively. The optical band gap was in the range of 3.13 to 3.59 eV. All films were highly resistive independent of deposition conditions used.     

Low temperature photoluminescence and infrared dielectric functions of pulsed laser deposited ZnO thin films on silicon

C-axis oriented ZnO thin films were grown on silicon (100) and (111) substrates by pulsed laser deposition. Low temperature photoluminescence spectra show besides the peaks of free excitons, of defect bound excitons, and of a donor-acceptor pair transition a new doublet at 3.328/3.332 eV. The doublet seems to originate from the columnar textured ZnO film structure. A corresponding structural dependence of the broadening parameter of the infrared dielectric functions was derived from spectroscopic ellipsometry in the spectral range from 380 to 1200 cm^− 1. The wave numbers of the E₁ transverse optical and A₁ longitudinal optical phonon modes of the ZnO films on silicon are determined to be 406 and 573 cm^− 1, respectively. These values are slightly smaller than those of single-crystalline ZnO thin films on sapphire.     

Multiple dip deposition of CdS films prepared by oscillating chemical bath

Highly oriented CdS thin films with thicknesses greater than 1 μm were deposited using the oscillating chemical bath deposition technique with multiple dips at 75 °C, and from 15 to 75 min as deposition times. Samples with different thicknesses were deposited by repeating the chemical deposition process one, two and three times. All CdS films present the α-greenockite hexagonal structure with (002) as the preferential orientation. Band-gap energy values ranged from 2.35 to 2.42 eV, being the smaller value for the two dip processes. Energy dispersion spectroscopy measurements show good stoichiometry of the CdS films with 4.3 at.% as the maximum Cd variation.     

CdS thin films growth by ammonia free chemical bath deposition technique

Cadmium Sulfide CdS thin films were deposited by chemical bath deposition technique using ethanolamine as complexing agent instead of commonly used ammonia to avoid its toxicity and volatility during film preparation. In order to investigate the film growth mechanism samples were prepared with different deposition times. A set of substrates were dropped in the same bath and each 30 minutes a sample is withdrawn from the bath, by this way all the obtained films were grown in the same condition. The films structure was analyzed by X rays diffraction. In early stage of growth the obtained films are amorphous, with increasing the deposition time, the films exhibits a pure hexagonal structure with (101) preferential orientation. The film surface morphology was studied by atomic force microscopy. From these observations we concluded that the early growth stage starts in the 3D Volmer-Weber mode, followed by a transition to the Stransky-Krastanov mode with increasing deposition time. The critical thickness of this transition is 120 nm. CdS quantum dots were formed at end of the film growth. The optical transmittance characterization in the UV-Visible range shows that the prepared films have a high transparency ranging from 60 to 80% for photons having wavelength greater than 600 nm.     

Effect of thermal annealing on properties of zinc selenide thin films deposited by chemical bath deposition

Zinc selenide films have been deposited on glass substrate by chemical bath deposition method. The resultant films were annealed up to 473 K temperature. The structural properties of zinc selenide thin films have been investigated by X-ray diffraction techniques. The X-ray diffraction spectra showed that zinc selenide thin films are polycrystalline and have a cubic structure. The most preferential orientation is along the (111) direction for all films. The lattice parameter, grain size, and microstrain were calculated and correlated with annealing temperature. The optical properties showed direct band gap values were found to be in the region of 2.69–2.81 eV. The electrical studies shows conductivity increases with increase in annealing temperature. The optoelectric and structural data are discussed from the point of applications based on achieving high performance devices.     

CdS thin films doped with metal-organic salts using chemical bath deposition

CdS thin films doped with metal-organic salts were grown on glass substrates at 90 °C by the chemical bath deposition technique. Metal-organic salts such as zinc acetate, chromium acetylacetonate, ammonium fluoride, aluminum nitrate, tin acetate and indium acetate were used. The chemical bath was prepared with cadmium acetate, ammonium acetate, thiourea and ammonium hydroxide. In the case of un-doped films, the S/Cd ratio was varied by changing the thiourea in the range 1-12. The best optical, structural and electrical properties were found for S/Cd = 2. The doped films were prepared by always keeping the ratio S/Cd constant at 2. The band gap (E_g) of doped and un-doped films was evaluated from transmittance spectra, where films with lower sulfur concentration exhibited higher E_g. X-ray analysis showed that both un-doped and doped films were polycrystalline with preferential orientation along the (111) direction and with the zincblende structure in all cases. The dark electrical results showed that CdS doped with Zn (1 at.%) exhibited the lowest resistivity values of 10 Ω cm.     

A statistical parameter study of indium tin oxide thin films deposited by radio-frequency sputtering

In order to optimize the electrical and optical properties of indium tin oxide (ITO) thin films, a statistical analysis called Taguchi design was employed. It is shown that the sheet resistance and transmittance are inversely proportional to each other as a function of the process parameters. Additionally, the preferred orientation of crystalline ITO film is distinguishably changed with the increase of sputtering temperature and oxygen fraction (O₂/O₂+Ar) in the sputtering ambient. The change in crystallinity results from the content of incorporated oxygen, which significantly affects the electrical and optical properties of ITO films and causes a rearrangement of atoms to form preferred closed-packed plane orientation. Finally, the microstructure of the ITO films becomes denser with the increasing oxygen fraction. As a result of this work, we have successfully achieved low sheet resistance (7.0 Ω/□) and high transmittance (~90%) for 300 nm thick films.     

Layer-by-layer self-assembly of dye-polyoxometalate multilayer composite films and their fluorescent properties

The layer-by-layer (LbL) self-assembly technique was successfully applied to the fabrication of dye-polyoxometalate multilayer composite films consisting of two dye molecules Rhodamine B (RB) and Rhodamine 6G (R6G) and a Keggin-type polyoxometalate [α-SiW₁₂O₄₀]⁴⁻ (α-SiW₁₂). The composite films were characterized by UV-vis spectroscopy, scanning electron microscopy (SEM), and fluorescence spectroscopy. UV-vis spectra show that the characteristic absorbance values of the multilayer films increase almost linearly with the number of dye/α-SiW₁₂ bilayers, suggesting that the deposition process is regular and highly reproducible from layer to layer. SEM micrographs indicate that the film surface is a little rough with some individual granular domains. In addition, the fluorescent properties of these composite films were also investigated by fluorescence spectroscopy.