Er3+掺杂的镓锗酸盐玻璃系统结构及光学性能的研究

采用熔融淬冷法制备了新型的Ga₂O₃-GeO₂-Na₂O玻璃。测试了样品的差示扫描分析曲线、紫外/可见 /近红外透过率、拉曼光谱和980nm泵浦下的红外及可见发光光谱。 利用经典的Tauc方程计算了样品的光 学带隙。研究发现Ga₂O₃的引入提高了玻璃的热稳定性,缩短了样品的紫外吸收截止边 ,增强了玻璃的直 接和间接光学带隙。同时,拉曼光谱分析表明随着Ga₂O₃对GeO₂取代量的增加,集中 在中频段447cm－1 的拉曼峰强度降低,峰位向高频方向移动;高频段830cm－1 和933cm－1处两峰向低频方向移动,玻璃系统 的最大声子能量降低。摩尔百分比为5%的Ga₂O₃对GeO₂取代显著提高了Er3+ 的1.53μm的发射强度,并抑制了其上转换发射强度。     

A Low On-Resistance SOI LDMOS using a Trench Gate and a Recessed Drain Ge Rui(葛锐), Luo Xiaorong(罗小蓉)?, Jiang Yongheng(蒋永恒), Zhou Kun(周坤),

本文提出了一种超低比导通电阻(R_on,sp) SOI槽栅凹漏MOSFET(TGRD MOSFET)。正向导通时,槽栅和凹漏的结构增加了导电区域,缩短了电流流经的路径,从而降低了比导通电阻。并且此结构中采用了RESURF结构提高了漂移区浓度,进一步降低了比导通电阻。当TGRD MOSFET的半个元胞尺寸为6.5μm时,它的击穿电压为97V,R_on,sp为0.985mΩ.cm₂。与SOI槽栅MOSFET(TG MOSFET)和常规MOSFET(Conventional MOSFET)相比,在相同的BV下,TGRD MOSFET的R_on,sp分别地降低了46%和83%。或者在相同的R_on,sp下,与SOI槽栅槽漏MOSFET(TGTD MOSFET)相比, BV提高了37%。     

CO2激光抑制熔石英损伤增长的研究进展

综述了熔石英光学材料激光诱导损伤增长机制,定性地描述了CO₂激光抑制损伤增长的物理过程。总结了近几年CO₂激光修复所取得的进展,最后阐述了目前CO₂激光抑制损伤增长所存在的问题和今后需努力突破的方向。     

基于石墨烯/砷化镓异质结构的毫米波/太赫兹探测器

单层石墨烯具有较低的固有光吸收效率,且材料中含有较多的缺陷,导致仅依靠石墨烯本身很难制备高性能的光电器件。通过石墨烯与半导体材料复合形成异质结构的方法可以克服这一瓶颈。本工作中利用石墨烯/砷化镓高迁移率异质晶体管结构制备了毫米波光电探测器,有效地提升了二维电子气特性,大幅度提高了器件在室温条件下的毫米波响应和探测能力。实验证明,400 mV的偏置电压下,该器件在25 GHz波段的获得了20.6 V?W^-1响应率,响应时间为9.8 μs,噪声等效功率为3.2×10^-10 W?Hz^-1/2。在太赫兹波0.12 THz下响应率仍然达到了4.6 V?W^-1,响应时间为10 μs,噪声等效功率为1.4×10^-9 W?Hz^-1/2。该工作展示了石墨烯/砷化镓异质结构毫米波太赫兹探测器的巨大应用前景。     

TiO2陶瓷晶界层电容器的研究

本文对TiO₂陶瓷晶界层电容器进行了较为系统的研究。用液相喷雾干燥法制备含Nb⁵⁺,Ba²⁺微量杂质的TiO₂超细原料粉末,研究了TiO₂陶瓷的电性能与烧结温度和测试条件的关系,阐述了TiO₂晶界层电容器的形成机制。     

TiO2掺杂浓度对倒装白光数码管光色性能的影响

采用热压法将TiO₂按一定计量比掺入AB混合胶制备折射胶层,在芯片和荧光粉胶层 间利用甩胶旋 涂工艺添加折射胶层,封装成白光数码管;对样品的光色性能进行了测试和机 理分析。结 果表明,折射层中掺杂TiO₂颗粒浓度为0.3%时,白光数码管单笔段 光通量达到了最高值175 lm,比TiO₂浓度为0%时提高了约为7.5%。在相同测试条件下,掺杂0.3%浓度TiO₂颗粒的倒装白光数码管比传统点胶 白光数码管平均光通量提高了约为6.5%,平均色温下降约为 9.6%,出光一致性更理想。TiO₂颗粒的掺入不 仅提高了器件光通量,降低了色温,同时为白光数码管实现远程荧光粉涂覆工艺提供了一种 有效的途径。     

NMŁ系统的有限强完备性

 对NMŁ系统(Nilpotent Minimum Łukasiewicz Logic)进行了研究,讨论了NMŁ系统的强完备性问题.首先对NMŁ-链的性质作了进一步的研究,证明了任一NMŁ-链都可部分嵌入到 中;其次,利用这一性质证明了NMŁ系统的有限强完备性定理;最后指出,在NMŁ系统中,关于无限理论的强完备性定理是不成立的.     

X档案

NOKIA 5630XpressMusic ·开关机速度较前一版本提升许多; ·当键盘锁上时,解锁速度明显加快,并且锁键盘的速度同样快了不少; ·改进了自带音乐播放器偶尔会出现死机的现象：     

Si4+掺杂对Gd1.6WO6:Eu3+0.4荧光粉发光特性的影响

采用高温固相法合成了不同Si⁴⁺掺杂比例的 Gd1.6(W1－xSix)O 6:Eu³⁺0.4荧光粉,分析了Si⁴⁺掺杂对 Gd1.6(W1－xSix)O 6:Eu³⁺0.4荧光粉晶格结 构的影响,研究了不同Si⁴⁺掺杂比例下的XRD谱、激发光谱、发射光谱和衰减曲线。 结果发现:Si⁴⁺的掺杂改变了基质的结构,使得激活剂离子Eu³⁺周围的晶体场 改变,从而改变了荧光粉的发光效率,当Si⁴⁺ 的掺杂浓度达到0.4mol时,晶体对称性最差,粉体发光强度最大 。根据发射光谱和衰减曲线计算了样品的J-O强度参数 和无辐射跃迁几率,结果表明适量的Si⁴⁺掺杂可以抑制无辐射跃迁,提高发光强度。 计算结果与实验结果相符。     

腔面镀膜对1342 nm分布反馈半导体激光器输出功率的影响

为提高1342 nm 分布反馈（Distributed Feedback, DFB）半导体激光器的输出功率,设计了三种腔面膜膜系组合。采用电子束蒸发镀膜技术对该激光器进行了腔面镀膜,并测试了其在三种膜系组合下的输出功率。结果表明,采用增透膜为基底(Sub)/Al₂O₃/Ta₂O₅/空气(Air)、高反膜为Sub/(Al₂O₃/Si)³Al₂O₃/Air的腔面膜膜系组合时,激光器的输出功率最高。前腔面反射率为0.2%,后腔面反射率为98.6%。在260 mA的直流电流下,平均输出功率达到了85 mW以上（增加了85.6%）,斜率效率提升了82.9%。通过采用此膜系组合进行激光器腔面镀膜,可以大幅提升1342 nm DFB半导体激光器的输出功率。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks